杂质元素特征X射线对氢气放电源打靶新谱线的影响

 在氢气放电源打靶的实验中,测到了系列能量恒定不变的低能X射线新谱线,这些新谱线的能量分别为(1.70±0.10) keV, (2.25±0.07) keV,(2.56±0.08) keV,(3.25±0.10) keV和（3.62±0.11） keV,与Si,Ta,S,Cl,K和Ca等元素的特征X射线能量相近,但靶中所含的杂质或来自放电室的杂质元素可能会产生这些能量的X射线谱峰,证实新谱线是否由这些元素的特征X射线干扰所致显得尤为重要。分析了本实验系统中各种杂质的可能来源,论证了放电室端杂质对新谱线的影响,及靶材料中体杂质和面杂质对新谱线的影响;用X射线光电子能谱仪对靶做了表面分析。研究结果表明：杂质元素的特征X射线不会对氢气放电源打靶产生的新谱线有影响。这些新谱线的性质有待进一步的实验研究。     

几类源打“新靶”和“旧靶”的对比实验

 根据氢气放电源、X光机X射线源和TiT源打“新靶”和“旧靶”的对比实验结果，证明了在氢气放电过程中产生了一种未知粒子，新谱线正是射线源轰击这种储存在“旧靶”中的未知粒子产生的。以此为依据得到如下推论：探测到的新谱线反映了未知粒子的能级特性，是未知粒子的能级谱线，所以这些新谱线是未知粒子存在的标志。     

热处理对氢气放电实验用靶的影响

对本底靶进行热处理后用TiT源重新开展打靶实验,未知谱线消失,证明未知谱线不是由靶中杂质造成的。将同种材料制成的两块本底靶分别进行热处理和不做任何处理,置于氢气放电源中进行照射生成源照靶,用TiT源打这两块源照靶发现照射前经热处理的靶产生的4条未知谱线较强,证明热处理能够增强靶吸附未知粒子的能力。     

氢气放电源和X光机X射线源打靶谱的研究

用氢气放电源打靶的方法,测到了系列的谱线.为了鉴别这些谱线,进行了X光机X射线源打靶实验和两种源打靶的对比实验.实验结果表明:在X光机X射线源打靶谱中,除靶材料的特征X射线和两条源谱线外,还存在两种谱线:一种是能量变化的谱线,根据不同衍射角θ和测量角φ的实验结果,及打多晶体靶和非晶体靶的实验事实,表明这种能量变化的谱线是衍射线;另一种是能量恒定不变的谱线.氢气放电源和X光机X射线源打靶谱的对比实验结果表明:两种源打靶谱自洽.这说明和X光机X射线源打靶谱一样,氢气放电源打靶谱中那些能量变化的谱线是衍射线.但     

靶材料杂质影响新谱线产生的实验验证

 为了验证氢气放电源打靶产生的新谱线不是靶杂质的特征谱线,完成了5项检验实验。其中屏蔽实验和强电子辐照靶的实验证实了新谱线不是来自放电室中的杂质形成的;靶的打磨实验表明靶表面的污染杂质也不能产生新谱线,形成共振峰的实验和新谱线强度随放电电压变化规律的实验结果都证明靶的总杂质不影响新谱线的测量。     

氢原子的X射线新谱系的实验观测及其解释

 引出氢（氘）气放电产生的射线和粒子流打在非晶聚氘乙烯C₂D₄和有机玻璃C₅H₈O₂等靶上,测得其散射谱上有多条尖锐的X谱线,其中除一条外都是（不经散射的）原始谱中没有的。经反复证认,这些谱线不是靶中元素（如C或O）和可能包含的杂质元素的特征X射线,也不是原始谱中X射线的衍射线,更不可能是低能电子的轫致辐射经吸收后形成的峰,认为该谱线很可能是前所未知的一类新的原子态的X射线新谱系的一部分。用曾提出的一个“小氢原子”理论模型予以解释,即认为氢（氘）气放电中产生了“小氢原子”,其（在基态）电子轨道半径约为普通氢原子的玻尔半径的1/274,该小氢原子能级之间的跃迁能够很好地解释所测到的X射线新谱系。     

打靶谱测量中的表面效应

通过电子、X射线混合源和X射线源打源照镁靶谱的对比实验,论证了放射源打靶谱的测量中存在着表面效应。它除和电子打靶有关外,也反映了靶表面的一些特性。为此,做了放电源打源照镁靶谱随存放时间变化的实验。实验结果表明:源照镁靶表面可能存在一层阻挡层,阻止新态氢原子向外扩散。根据打磨和未打磨源照镁靶打靶谱的对比实验,推测靶表面的阻挡层可能是一层新态氢原子富集层。为此,又做了镁铼靶打靶谱的对比实验,照射打磨和未打磨镁靶打靶谱的对比实验,根据实验结果,估计新态氢原子富集层可能是一层以氧为核的氢原子和新态氢原子团。由此推测阻挡层是一层以氧为核的新态氢原子团组成的新态氢原子富集层。这种新态氢原子富集层产生了打靶谱测量中的表面效应。     

72Ge40的低激发态能级研究

用低本底反康谱仪(HpGe–NaI)和HpGe–HpGe的三参数符合γ–γ–T系统,对72Ga的衰变γ单谱、符合谱进行了研究,实验共获得2.3×10⁷个符合事件.根据实验结果建立了含有26个能级、87条γ射线的72Ga的衰变能级纲图,其中包含首次测到7条γ射线225.92、826.97、1349.71、1475.32、1667.91、2105.28、2247.39keV和4个能级3248.01、3396.27、3806.10、3864.56keVS并为2939.83keV能级和112.59、937.97、2402.25、2939.95keV4条γ射线的存在提供了证据;实验没有发现113.5、1155.7、1192.4keVγ射线和能级3307.1keV存在的证据。并把317.72keVγ射线的跃迁,由原来的能级3757.26keV跃迁到3439.51keV能级,改为3565.85keV到3248.01keV能级跃迁.     

高剥离态Fe XVI离子能级寿命测量

在原子能院串列加速器上,利用束箔方法,测量了能量为30MeVFe离子产生的高剥离态谱线跃迁结构的寿命值。在30MeV时,Fe通过箔膜的电荷态分布在7+到17+,我们选择Fe XVI 2p6 (1S) 4p -2p6 (1S) 5d（2P°3/2 -2D3/2）的谱线,谱线波长124.696 Å,能级寿命为79±4ps。并对实验误差进行了分析。     

用14MeV中子轰击铌伴生γ射线研究

利用脉冲化的T(d,n)⁴He中子源、伴随粒子方法、Ge(Li)探测器和飞行时间技术测量了14.9MeV中子和铌反应在30°—140°之间七个角度上的分立γ射线谱;由高分辨γ谱分析程序识别了79条谱线;初步确定了62条谱线所由产生的反应类型和跃迁能级,其中有40条谱线是在由中子诱发的核反应中首次发现的.定出了每条谱线在七个角度上的微分产生截面,结果表明该反应中的伴生γ发射基本上是各向同性的.     

高频离子源等离子体的光谱诊断

 采用发射光谱法研究了高频离子源的等离子体性质。该离子源应用于ZF-200keV中子发生器中，是一种电感耦合型无极环形放电高频离子源。实验采用绝对定标后的光学多道分析系统测定了离子源等离子体在不同阶段氢原子巴耳末谱线系中前三条谱线的强度，并采用部分局部热力学平衡状态的理论，计算出了相应阶段高频离子源等离子体的电子温度、氢原子浓度、氢离子浓度等参数，并进行了简要分析。     

Hydrogen bonding in oxalic acid and its complexes: A database study of neutron structures

The basic result of carboxylic group that the oxygen atom of the -OH never seems to be a hydrogen bond acceptor is violated in the cases, namely urea oxalic acid and bis urea oxalic acid complexes, where the hydroxyl oxygen atom is an acceptor of a weak N—H… O hydrogen bond. The parameters of this hydrogen bond, respectively in these structures are: hydrogen acceptor distance 2.110 Å and 2.127 Å and the bending angle at hydrogen, 165.6° and 165.8°. The bond strength around the hydroxyl oxygen is close to 1.91 valence units, indicating that it has hardly any strength left to form hydrogen bonds. These two structures being highly planar, force the formation of this hydrogen bond. As oxalic acid is the common moiety, the structures of the two polymorphs, α-oxalic acid and β-oxalic acid, also were looked into in terms of hydrogen bonding and packing.     

Effect of bombardment with iron ions on the evolution of helium,hydrogen, and deuterium blisters in silicon

The effect of bombardment with iron ions on the evolution of gas porosity in silicon single crystals has been studied. Gas porosity has been produced by implantation hydrogen, deuterium, and helium ions with energies of 17, 12.5, and 20 keV, respectively, in identical doses of 1 × 10¹⁷ cm^–2 at room temperature. For such energy of bombarding ions, the ion doping profiles have been formed at the same distance from the irradiated surface of the sample. Then, the samples have been bombarded with iron Fe¹⁰⁺ ions with energy of 150 keV in a dose of 5.9 × 10¹⁴ cm^–2. Then 30-min isochoric annealing has been carried out with an interval of 50°C in the temperature range of 250–900°C. The samples have been analyzed using optical and electron microscopes. An extremely strong synergetic effect of sequential bombardment of silicon single crystals with gas ions and iron ions at room temperature on the nucleation and growth of gas porosity during postradiation annealing has been observed. For example, it has been shown that the amorphous layer formed in silicon by additional bombardment with iron ions stimulates the evolution of helium blisters, slightly retards the evolution of hydrogen blisters, and completely suppresses the evolution of deuterium blisters. The results of experiments do not provide an adequate explanation of the reason for this difference; additional targeted experiments are required.     

Erzeugung neuer isomerer Kernzustände durch Kernphotoreaktionen am Antimon und Thallium

The systematic search for new short-lived isomeric states has been continued by irradiation of an additional 32 selected elements with 26 MeV bremsstrahlung. Isomeric transitions were detected using a conventional scintillation spectrometer. Irradiation of antimony led to the production of a new (530±50) μsec isomeric state which decays through emission of partially converted (62±2) keV and (76±3) keV gamma rays. The 530 μsec half-life is tentatively associated with the 136 keV level in Sb¹²². An apparent inconsistency in the previously proposed level scheme of Sb¹²² can be removed if the 3.5 min Sb¹²²-activity is assigned to an isomeric level in Sb¹²² lying less than 15 keV above the 136 keV isomeric state. A new measurement of the half-life of this level yielded a value of (4.1₅±0.2) min. Another new isomeric state with a (2.l±0.2) msec half-life was produced by irradiating thallium. The isomeric state decays by emission of two gamma rays of (335±8) keV and (597±12) keV which were found to be in coincidence. Irradiation of erbium led to the production of a short-lived isomeric transition which may be identical with a previously reported Ho-isomer. Results are discussed in the appendix.     

The kinetics of Cr layer coated on TiNi films for hydrogen absorption

The effect of hydrogen absorption on electrical resistance with temperature for TiNi and TiNi-Cr thin films was investigated. The TiNi thin films of thickness 800 Å were deposited at different angles (? = 0°, 30°, 45°, 60° and 75°) under 10^?5 Torr pressure by thermal evaporation on the glass substrate at room temperature. A layer of Cr of thickness 100 Å was coated on the TiNi thin films. The changing rate of hydrogen absorption increases after Cr layer coating because Cr enhances the catalytic properties of hydrogen absorption in thin films. The rate of hydrogen absorption increases with temperature at lower range but at higher range of temperature it was found to decrease and also it was found that the hydrogen absorption increases with angle of deposition.