Correlation mechanism of negative differential resistance for tunneling through a molecule

A model for electron transport through a single molecule with two electronic states, one of which is strongly hybridized with contacts and the other is localized, has been investigated. A solution for this model in the limit of strong intramolecular Coulomb interaction is found. A mechanism of negative differential resistance caused by strong intramolecular correlations is revealed.     

Origin of negative differential resistance in a strongly coupled single molecule-metal junction device

A new mechanism is proposed to explain the origin of negative differential resistance (NDR) in a strongly coupled single molecule-metal junction. A first-principles quantum transport calculation in a Fe-terpyridine linker molecule sandwiched between a pair of gold electrodes is presented. Upon increasing the applied bias, it is found that a new phase in the broken symmetry wave function of the molecule emerges from the mixing of occupied and unoccupied molecular orbitals. As a consequence, a nonlinear change in the coupling between the molecule and the lead is evolved resulting in NDR. This model can be used to explain NDR in other classes of metal-molecule junction devices.     

A bond bending model for negative differential resistance in transport through single molecules

We develop a model for transport through benzene-based single molecules with an NO₂ side-group, which incorporates bond bending between the NO₂ and the adjacent benzene ring and successfully reproduces the experimentally observed strong negative differential resistance. Transport through the molecule is assumed to be incoherent and is treated using photon assisted tunnelling.     

Strong n-type molecule as low bias negative differential resistance device predicted by first-principles study

A first-principles study of the transport properties of two thiolated pentacenes sandwiching ethyl is performed. The thiolated pentacene molecule shows strong n-type characteristics when contact Ag lead because of low work function about metal Ag. A strong negative differential resistance (NDR) effect with large peak-to-valley ratio of 758% is present under low bias. Our investigations indicate that strong n- or p-type molecules can be used as low bias molecular NDR devices and that the molecular NDR effect based on molecular-level leaving not on molecular-level crossing has no hysteresis.     

Controlling single-molecule negative differential resistance in a double-barrier tunnel junction

We observed the transition from negative differential resistance (NDR) to the absence of NDR in the differential conductance (dI/dV) spectra of single copper-phthalocyanine (CuPc) molecules adsorbed on one, two, and three atomic layers of NaBr grown on a NiAl(110) substrate. Through numerical simulation, this transition is attributed to two phenomena in the double-barrier tunnel junction: (i) the opposite bias dependence of the vacuum and NaBr barrier heights, and (ii) the changing barrier widths for CuPc molecules adsorbed on different layers of NaBr.     

Light-induced negative differential resistance effect in a resistive switching memory device

The negative differential resistance (NDR) effect was observed in a Pt/BiFeO₃/TiO₂/BiFeO₃/Pt memory cell by using light-illumination as extra stimulation. Further, the coexistence appearances and gradually becomes obvious when the device is exposed to light-illumination, which display an excellent stability and reversibility of the coexistence of NDR and resistive switching (RS) at room temperature. Through analysis of the physical conduction mechanism, it is expected that a large number of photo-generated charge carriers are induced under light-illumination on the surface and interface of the heterojunction is responsible for the appearance of this coexistence phenomenon. Importantly, the NDR effect is strengthened by the competition transfer of charge carrier in the polarized electric field under light-illumination. This work shows that the coexistence of light-modulated NDR and RS can deeply explore the potential applications of light-controlled multifunctional devices.     

Large negative differential resistance in graphene nanoribbon superlattices

A graphene nanoribbon superlattice with a large negative differential resistance (NDR) is proposed. Our results show that the peak-to-valley ratio (PVR) of the graphene superlattices can reach 21 at room temperature with bias voltages between 90–220 mV, which is quite large compared with the one of traditional graphene-based devices. It is found that the NDR is strongly influenced by the thicknesses of the potential barrier. Therefore, the NDR effect can be optimized by designing a proper barrier thickness. The large NDR effect can be attributed to the splitting of the gap in transmission spectrum (segment of Wannier–Stark ladder) with larger thicknesses of barrier when the applied voltage increases.     

Positive and negative differential resistance in electrical conductors

A phase transition from one conducting state to another and the appearance of positive and negative differential resistance in the current-voltage characteristic is investigated experimentally for the gap instability in nonequilibrium superconductors and the avalanche breakdown in extrinsic semiconductors. Additional observation of spatial current structures in the transition regime of both solid-state systems stimulates a simple model approach connecting these spatial patterns to the measured current-voltage characteristics. Based on the underlying experimental situations considered, our model is extended to the framework of four substantial cases.     

Pseudomorphic InGaAs quantum-wire FETs with negative differential resistance

Pseudomorphic trench-type InGaAs/InAlAs quantum-wire field-effect transistors (QWR-FET) are realized by selective molecular beam epitaxy. The pseudomorphic QWR-FET has a negative differential resistance (NDR) effect with a low source–drain voltage (0.3 V). The NDR spectra are clearly observed in the 50–220 K temperature range. The operating current of the pseudomorphic QWR-FET is twice that of a lattice-matched QWR-FET, and this is thought to be due to the higher electron mobility.     

Interface trap-induced negative differential resistance in nMOSFET with floating source

Interface trap can act as the generation center in device to induce a very weak generation current. We observed the negative differential resistance NDR of this generation current I_D in nMOSFET with the floating source. It originates from that the generation function of interface trap is enabled and then is shut down in turn as increasing the drain voltage. This change relies on the interaction among the interface trap energy-level and the electron's Fermi-levels of drain and source under the floating source condition. It is found that the peak-to-valley ratio of I_D is beyond 30.     

Astability and negative differential resistance of the Wigner solid

We report spontaneous narrow band oscillations in the high field Wigner solid. These oscillations are similar to the recently seen and yet unexplained oscillations in the reentrant integer quantum Hall states. The current-voltage characteristic has a region of negative differential resistance in the current biased setup and it is hysteretic in the voltage biased setup. As a consequence of the unusual breakdown, the oscillations in the Wigner solid are of the relaxation type.     

Hysteresis and negative differential resistance of the current-voltage characteristic of a water bridge

It is found experimentally that the properties of nanoporous ion-exchange membranes (hysteresis of the current-voltage characteristic in the solution and negative differential resistance), which have been discussed in recent years, are not associated with the properties of the membrane. It is shown that these effects are also observed in a floating water bridge and in water-filled tubes and are apparently determined by the geometrical shape of the liquid conductor. The observed effects are explained qualitatively.     

Engineering of carbon-based superlight spin filter with negative differential resistance

Based on density functional theory and non-equilibrium Green's function, we investigate the edge hydrogenation and oxidation effects on the spin transport of devices consisting of a zigzag C₂N nanoribbon (ZC₂NNR) embedded in zigzag graphene nanoribbons in parallel (P) and antiparallel (AP) spin configurations. The results show that device with edge hydrogenation exhibits dual spin filtering effect in AP spin configuration and obvious negative differential resistance in both P and AP spin configuration. By substituting oxygen for hydrogen as passivation atoms of ZC₂NNR, the spin filtering efficiency is as high as 100% in the P spin configuration, and the negative differential resistance is largely enhanced with a peak to valley ratio in excess of 4×10³. Our theoretical studies suggest that zigzag C₂N nanoribbon modulated by edge substitution has great potential in the design of future multifunctional spin devices.     

Low-bias negative differential resistance in combined nanostructure of two zigzag-edged trigonal graphenes

Using the density functional theory combined with the non-equilibrium Green's function method, we have investigated the electron transport properties of combined nanostructures of two zigzag-edged trigonal graphenes linked by their vertex carbon atoms bridged between two gold electrodes. The results show that obvious negative differential resistance behavior can be obtained at low bias (0.3 V) in such combined systems. The observed low-bias negative differential resistance behavior is analyzed by the bias-dependent transmission spectra, projected density of states, and voltage drop.     

Large negative differential resistance behavior in arsenene nanoribbons induced by vacant defects

We have studied the electronic structures of arsenene nanoribbons with different edge passivations by employing first-principle calculations. Furthermore, the effects of the defect in different positions on the transport properties of arsenene nanoribbons are also investigated. We find that the band structures of arsenene nanoribbons are sensitive to the edge passivation. The current-voltage characteristics of unpassivated and O-passivated zigzag arsenene nanoribbons exhibit a negative differential resistance behavior, while such a peculiar phenomenon has not emerged in the unpassivated and O-passivated armchair arsenene nanoribbons. The vacant defects on both top and bottom edges in unpassivated armchair arsenene nanoribbon can make its current-voltage characteristic also present a negative differential resistance behavior. After expanding the areas of the top and bottom defects in unpassivated armchair arsenene nanoribbon, the peak-to-valley ratio of the negative differential resistance behavior can be enlarged obviously, which opens another way for the application of arsenene-based devices with a high switching ratio.     

Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod

We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorod was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current–voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NDR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod.