Structural models of quasicrystals: Significance of positron annihilation studies

We discuss implications of our results of positron annihilation studies of various icosahedral quasicrystalline alloys on the structural models of this new phase. We have studied Al-Mn, Al-Mn-Si, Al-Cu-Li and Al-Cu-Fe and a two component positron annihilation lifetime spectrum seems characteristics of all these icosahedral quasicrystalline alloy phases. Analysis of the lifetime spectra yields vacancy sizes varying from monovacancies to hexavacancies with concentration of 1 to 8 ppm in various quasicrystalline alloys. These vacancy concentrations are about three orders of magnitude less than that observed in metallic glasses. We also notice that in the case of metastable quasicrystalline alloys such as Al-Mn and Al-Mn-Si, these vacancy clusters disappear during the crystallization process resulting in single lifetime spectra. On the other hand, for stable quasicrystalline alloys, two component life time spectra, which indicate the presence of vacancy clusters, continue to exist even after prolonged heat treatment. Our results seem incompatible with the space filling Penrose tiling or random tiling models and favour cluster-based models.     

Formation of a new F.C.C. τ2 phase in rapidly quenched Al55Cu35V10 alloy

X‐ray diffraction and transmission electron microscopy experiments were carried out to study the structure of rapidly solidified as‐cast and annealed Al₅₅Cu₃₅V₁₀ alloy. The as‐cast Al₅₅Cu₃₅V₁₀ alloy shows the presence of a new f.c.c. τ2 phase (a=0.58nm) along with a b.c.c. (a = 0.89 nm) phase which after subsequent annealing transforms into single f.c.c. phase (a = 0.58 nm). In this paper, it is also reported that these phases are crystalline approximants to an icosahedral phase on the basis of e/a (valence electron per atom) constant line. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

氧化锌单晶的水热生长与结晶习性

本文应用水热生长法,采用双温区高压反应釜,黄金内衬(φ35mm ×2mm),碱性溶液矿化剂,生长出了毫米级的透明氧化锌单晶,最大单晶可达2mm ×3mm ×6mm.所生长氧化锌晶体为纤锌矿型的六方晶体,晶体呈上部锥形的六棱柱体,{10(1-)1}、{10(1-)0}和{000(1-)}面有较大的显露平面.本文中从温差和填充度方面研究了实验条件对ZnO晶体的生长及其形貌的影响,使用黄金内衬前后的结果表明,用贵金属内衬可以有效阻止釜内壁杂质的进入,使晶体完整透明.     

加氮对直流电弧等离子体喷射金刚石膜生长、形貌和质量的影响

利用直流等离子体喷射化学气相沉积法制备掺氮的金刚石厚膜.本文研究了在甲烷/氩气/氢气中加入氮气对金刚石膜生长、形貌和质量的影响.反应气体的比例由质量流量计控制,在固定氢气(5000sccm)、氩气(3000sccm)、甲烷(100sccm)流量的情况下改变氮气的流量,即反应气体中氮原子和碳原子的变化比例(N/ C比)范围是从0.06到0.68.同时金刚石膜在固定的腔体压力(4kPa)和衬底温度(800℃)下生长.金刚石膜用扫描电镜(SEM)、拉曼谱和X射线衍射表征.结果表明,氮气在反应气体中的大量加入对直流等离子体喷射制备金刚石膜的形貌、生长速率、晶体取向、成核密度等有非常显著的影响.     

Resistive and Magnetic Susceptibility Transitions in Superconducting (TMTSF)2C104

We report measurements of the ac magnetic susceptibility and dc resistive superconducting transitions in the organic superconductor (TMTSF)₂C10₄. Inductive measurements show complete diamagnetic shielding below a broad transition and initial flux penetration at very low fields [H_c1(0) < 1 Oe]. The resistive transition is also broad, but occurs at a significantly higher temperature than the inductive transition, T_c = 1.0 K and 0.65 K respectively. Resistance measurements also show evidence of a phase transition in the vicinity of 24 K. Magnetic field induced transitions, measured both inductively and resistively, show marked anistropy both in magnitude and in breadth of the transition. Results suggest that (TMTSF)₂C10₄ is a quasi ID or 2D superconductor at high temperatures and high magnetic fields and an anisotropic bulk superconductor at low temperatures and fields. Associated thermoelectric power measurements suggest that spin density waves coexist with the superconducting state.     

热丝法低温制备多晶硅薄膜微结构的研究

采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。利用XRD、拉曼光谱和原子力显微镜(AFM)研究了灯丝与衬底间距(5~10mm),灯丝温度(1800~1400℃)和衬底温度(320~205℃)对薄膜晶体取向、晶化率、晶粒尺寸以及形貌的影响规律。结果表明,随着热丝与衬底间距增加,多晶硅薄膜的晶化率和晶粒尺寸明显减小;随热丝温度的降低,薄膜的晶化率都出现了大致相同的规律:先不断增大后突然大幅减小。     

Al_2O_3-TiO_2复合薄膜晶相及形貌研究

本文以钛酸正四丁酯为前驱体采用溶胶凝胶法制备了稳定的TiO2溶胶,以可溶性的硝酸铝作为掺杂剂制备了Al2O3-TiO2复合薄膜。采用XRD分析了薄膜的晶相组成,AFM表征了薄膜表面粗糙度随着Al2O3添加量的增加而变化的趋势。XRD测试结果表明,随着Al2O3添加量的增加,薄膜中TiO2晶粒的平均尺寸逐渐减小;而AFM测试结果表明,薄膜表面粗糙度呈现减小的趋势,但是当Ti/Al比例增加到1∶0.12时,颗粒尺寸比1∶0.06时有所增大,这主要是由于包覆在TiO2晶粒表面的Al2O3非晶相增多导致颗粒聚集生长严重所致。     

硅晶体生长固液界面形貌研究

结合杰克逊界面理论、分子动力学模拟(MD)和密度泛函理论(DFT),对硅晶体(100)和(111)面生长过程中固液界面形貌进行研究,包括界面自由能变化、结构变化和生长位置吸附能等。通过杰克逊界面理论计算,发现(100)界面晶相原子和流体相原子在表面各占约50%时吉布斯自由能达到极小值,而(111)界面在表面占比约0%或100%时达到极小值,说明当热力学平衡时,(100)面趋向于粗糙面,(111)面趋向于光滑面;分子动力学模拟显示,随着生长的进行,初始光滑的固液界面在(100)面上会逐渐转变为粗糙界面,而(111)面则始终保持光滑界面生长;且在生长过程中,(100)面的生长速率明显高于(111)面,因为(100)面始终为粗糙面生长;DFT计算发现,(100)面上的所有生长位置吸附能接近,可以实现连续生长,(111)面吸附能则存在明显的差值,生长原子需要吸附在台阶处才能进行层状生长。     

Ca(H2PO4)2-H3PO4-K2SO4体系中石膏晶型及形貌调控

为将Ca(H₂PO₄)₂制备KH₂PO₄过程中的石膏资源化利用,以H₃PO₄与CaCO₃反应制备Ca(H₂PO₄)₂溶液,并与K₂SO₄溶液反应,进行Ca(H₂PO₄)₂-H₃PO₄-K₂SO₄体系中石膏晶型和形貌调控研究。结果表明:通过改变反应时间、反应温度、SO^2-₄过量系数和CaO含量等参数可对Ca(H₂PO₄)₂-H₃PO₄-K₂SO₄体系中石膏晶型和形貌进行调控,制得短柱状α-CaSO₄·0.5H₂O。体系在温度高于95 ℃和CaO含量为3.0%~5.0%(质量分数,下同)时形成α-CaSO₄·0.5H₂O,在CaO含量为5.5%主要形成CaSO₄·2H₂O;反应时间长于20 min和SO^2-₄过量系数大于1.4将形成K₂SO₄(CaSO₄)₅·H₂O,导致石膏晶体表面缺陷增加。本实验条件下,适宜反应条件为:反应时间10 min、反应温度95 ℃、SO^2-₄过量系数1.2和CaO含量5.0%,此条件下可制得长度42~70 μm、直径13~24 μm的短柱状α-CaSO₄·0.5H₂O,其抗折和抗压强度分别可达5.61 MPa和33.74 MPa,滤液中钾收率和脱钙率分别可达94.23%和83.80%。