Effect of GePt buffer layer on magnetic properties and microstructure of FePt films

We have explored the interlayer diffusion effect of Ge/FePt, GePt/FePt bilayer on the formation of ordered L1₀ FePt phase. In Ge/FePt bilayer, the Ge₃Pt₂ compound was formed during post annealing at 400^oC for 1.0 h. Diffusion between Ge and FePt layer suppres the formation of ordered L1₀ FePt phase. With Ge₂Pt₃ underlayer, the FePt film was ordered at 400 °C and the in-plane coercivity was 9.3 kOe. The ordering temperature was reduced about 50 °C compared to the single layer FePt film.     

Effects of Cr underlayer and Pt buffer layer on the interfacial structure and magnetic characteristics of sputtered FePt films

This work develops a new method for growing L1₀ FePt(0 0 1) thin film on a Pt/Cr bilayer using an amorphous glass substrate. Semi-coherent epitaxial growth was initiated from the Cr(0 0 2) underlayer, continued through the Pt(0 0 1) buffer layer, and extended into the L1₀ FePt(0 0 1) magnetic layer. The squareness of the L1₀ FePt film in the presence of both a Cr underlayer and a Pt buffer layer was close to unity as the magnetic field was applied perpendicular to the film plane. The single L1₀ FePt(1 1 1) orientation was observed in the absence of a Cr underlayer. When a Cr underlayer is inserted, the preferred orientation switched from L1₀ FePt(1 1 1) to L1₀ FePt(0 0 1) and the magnetic film exhibited perpendicular magnetic anisotropy. However, in the absence of an Pt intermediate layer, the Cr atoms diffused directly into the FePt magnetic layer and prevented the formation of the L1₀ FePt(0 0 1) preferred orientation. When a Pt buffer layer was introduced between the FePt and Cr underlayer, the L1₀ FePt(0 0 1) peak appeared. The thickness of the Pt buffer layer also substantially affected the magnetic properties and atomic arrangement at the FePt/Pt and Pt/Cr interfaces.     

Low-temperature ordering of L10 FePt phase in FePt thin film with AgCu underlayer

FePt (20 nm) films with AgCu (20 nm) underlayer were prepared on thermally oxidized Si (0 0 1) substrates at room temperature by using dc magnetron sputtering, and the films annealed at different temperature to examine the disorder–order transformation of the FePt films. It is found that the ordered L1₀ FePt phase can form at low annealing temperature. Even after annealing at 300 °C, the in-plane coercivity of 5.2 kOe can be obtained in the film. With increase in annealing temperature, both the ordering degree and coercivity of the films increase. The low-temperature ordering of the films may result from the dynamic stress produced by phase separation in AgCu underlayer and Cu diffusion into FePt phase during annealing.     

Underlayer diffusion-induced enhancement of coercivity in high anisotropy FePt thin films

The L1₀ ordered FePt films have been prepared at 300 °C with a basic structure of CrRu/MgO/FePt, followed by a post-annealing process at temperatures from 200 to 350 °C. The magnetic properties and the microstructure of the films were investigated. It is found that coercivity of FePt films increases greatly from 3.57 to 9.1 kOe with the increasing annealing temperature from 200 to 350 °C. The loop slope of the M–H curves decreases with the increasing annealing temperature, which is due to the grain isolation induced by MgO underlayer diffusion during the annealing process. The underlayer diffusion could be a useful approach to prepare the FePt-based composite films for high-density recording media.     

Control of crystallographic orientation in L10 FePt films by using Cr and CrW underlayers

The microstructure and magnetic properties of FePt films grown on Cr and CrW underlayers were investigated. The FePt films that deposited on Cr underlayer show (2 0 0) orientation and low coercivity because of the diffusion between FePt and Cr underlayer. The misfit between FePt magnetic layer and underlayer increases by small addition of W element in Cr underlayer or using a thin Mo intermediate layer, which is favorable for the formation of (0 0 1) orientation and the transformation of FePt from fcc to fct phase. A good FePt (0 0 1) texture was obtained in the films with Cr₈₅W₁₅ underlayer with substrate temperature of 400 °C. The FePt films deposited on Mo/Cr underlayer exhibit larger coercivity than that of the films grown on Pt/Cr₈₅W₁₅ because 5 nm Mo intermediate layer depressed the diffusion of Cr into magnetic layer.     

Comparative evaluation of performance of percolated perpendicular media using FePt–MgO/Pt/Cr trilayer and FePt–MgO/MgO bilayer

(Fe₄₈Pt₅₂)_100−x–(MgO)_x films were used to examine the performance of a perpendicular percolated medium. Two underlayers, Pt(0 0 1)/Cr(0 0 2) and MgO(0 0 2), were used for comparison. The (Fe₄₈Pt₅₂)_100−x–(MgO)_x film with the MgO underlayer exhibits a strong preference to segregate at FePt grain boundaries. The microstructure with small closely packed MgO particles (2–4 nm) dispersed uniformly in the L1₀ FePt matrix was achieved in the Pt/Cr underlayered sample. Structural data reveal that the precipitate is crystallographically coherent with the surrounding L1₀ FePt phase and preserves good lattice alignment. Magnetic results indicate significant pinning behavior for those introduced non-magnetic columns with an enhanced coercivity of about 70%—much greater than that of the MgO underlayered samples. Percolated perpendicular medium can be realized in the FePt system and a Pt(0 0 1)/Cr(0 0 2) underlayer promotes the formation of pinning sites within the FePt grains.     

Effect of Cr100−xTix (x = 0-19 at.%) alloy underlayers on the high coercivity of FePt thin film below the substrate temperature of 250 °C

The effect of Cr_100−xTi_x underlayer on orderd-L1₀ FePt films was investigated. A low-temperature ordering of FePt films could be attained through changing the Ti content of Cr_100−xTi_x underlayer. The ordering temperature of the 30 nm FePt film grown on 20 nm Cr₉₀Ti₁₀ underlayer was reduced to 250 °C which is practical manufacture process temperature. An in-plane coercivity was very high to 6000 Oe and a ratio of remnant magnetization (M_r) to saturation magnetization (M_s) was as large as 0.85. This result indicates that the coercivity obtained at 250 °C by the effect of CrTi underlayer is significantly higher than those obtained at 250-275 °C by the effect of underlayers in other conventional studies. The prominent improvement of the magnetic properties of ordered FePt thin films at low temperature of 250 °C could be understood with considering the strain-induced ordering phase transformation associated with lattice mismatch between Cr underlayer and FePt magnetic layer due to an addition of Ti content.     

Low-temperature ordering and enhanced coercivity of L10-FePt thin films with Al underlayer

FePt multilayer films with and without Al underlayer were prepared by magnetron sputtering on SiO₂ substrate and subsequently annealed in vacuum. Experimental results suggest that the existence of Al underlayer can effectively reduce the ordering temperature and increase the coercivity of FePt films. Due to the slight larger lattice constant of Al underlayer than that of FePt films, [Fe (0.66 nm)/Pt (0.84 nm)]₃₀ films begin to order at 350 °C and the coercivity of them reach to 5.7 kOe after annealing at 400 °C for half an hour.     

Monolayer deposition of L10 FePt nanoparticles via electrospray route

The deposition monolayers of L1₀ FePt nanoparticles via an electrospraying method and the magnetic properties of the deposited film were studied. FePt nanoparticles in a size of around 2.5 nm in diameter, prepared by a liquid process, were used as a precursor. The size of the deposited particles can be controlled up to 35 nm by controlling the sprayed droplet size that is formed by adjusting the precursor concentration and the precursor flow rate. The droplets were heated in a tubular furnace at a temperature of up to 900 °C to remove all organic compounds and to transform the FePt particles from disordered face centered cubic to an ordered FCT phase. Finally, the particles were deposited in the form of a monolayer film on a silicon substrate by electrostatic force and characterized by scanning electron microscopy. The monolayer of particles was obtained by the high charge on particles obtained during the electrospraying process. The magnetic properties of the monolayer were investigated by magneto-optic Kerr effect measurements. Coercivity up to 650 Oe for a film consisting of 35 nm L1₀ FePt nanoparticles was observed after heat treatment at a temperature of 800 °C.     

L10 FePt films epitaxially grown on MgO substrates with or without a Cr underlayer

FePt and FePt/Cr films were epitaxially grown on MgO (2 0 0) substrates at 350 °C by DC magnetron sputtering. The structural properties and epitaxial relationship are investigated by high-resolution X-ray diffraction (XRD). The XRD spectra revealed that both FePt and FePt/Cr films had a (0 0 1) preferred orientation. However, FePt films with Cr underlayers had a larger a and a smaller c than those of the samples without Cr underlayers. Furthermore, the FePt (0 0 1) peak characterized by its rocking curves became less pronounced when the Cr underlayer was applied. The off-spectra from the MgO (1 1 1), Cr (1 0 1) and FePt (1 1 1) demonstrated that the epitaxial relationship between the FePt film, Cr underlayer and MgO substrate was confirmed to be FePt (0 0 1)<100> || Cr (1 0 0)<1 1 0> || MgO (1 0 0)<0 0 1>. The domain size and M_s decreased when the Cr underlayer was applied due to the diffusion of Cr and the existence of the initial layer between Cr and FePt layers.     

Low-temperature deposition of L10 FePt films for ultra-high density magnetic recording

A method based on strain-induced phase transformation was used to lower the ordering temperature of FePt films. The strain resulted from the lattice mismatch between the FePt film and the substrate or underlayer favored the ordering. The relationships between the lattice mismatch, the ordering of FePt film, and the corresponding magnetic anisotropic constant were investigated. A critical lattice mismatch near 6.33% was believed to be most suitable for improving the chemical ordering of the FePt films. CrX (X=Ru, Mo, W, Ti) alloys with (2 0 0) texture was used to control the easy axis and ordering temperature of FePt films on glass substrate. Large uniaxial anisotropy constant K_u?1×10⁷ erg/cm³, good magnetic squareness (∼1) and FePt(0 0 1) texture (rocking curve −5°) were obtained at the temperature T_s?250 °C when using CrRu underlayer. The diffusion from overlying layers of Ag and Cu and an inserted Ag pinning layer were effective in reducing the exchange decoupling and changing the magnetization reversal. The media noise was effectively reduced and the SNR was remarkably enhanced when a 2 nm Ag was inserted.     

Exchange interaction effect of TbCo/FePt bilayers

Interlayer exchange coupling in dc-magnetron sputtered Tb_29.6Co_70.4/FePt bilayers with different annealing temperatures of the FePt film have been investigated. The dependence of ordering degree on perpendicular magnetic properties of the FePt film was studied. The Tb_29.6Co_70.4/FePt film has high perpendicular coercivity and high saturated magnetization about 7.5 kOe, and 302 emu/cm³, respectively as the substrate temperature is 500 °C and annealing at 500 °C for 30 min. It also shows a strong exchange coupling between this FePt layer and Tb_29.6Co_70.4 layer. We also examined the interface wall energy in the exchange coupled Tb_29.6Co_70.4/FePt double layers.     

Very high coercivities of top-layer diffusion Au/FePt thin films

The Au/FePt samples were prepared by depositing a gold cap layer at room temperature onto a fully ordered FePt layer, followed by an annealing at 800 °C for the purpose of interlayer diffusion. After the deposition of the gold layer and the high-temperature annealing, the gold atoms do not dissolve into the FePt Ll₀ lattice. Compared with the continuous FePt film, the TEM photos of the bilayer Au(60 nm)/FePt(60 nm) show a granular structure with FePt particles embedded in Au matrix. The coercivity of Au(60 nm)/FePt(60 nm) sample is 23.5 kOe, which is 85% larger than that of the FePt film without Au top layer. The enhancement in coercivity can be attributed to the formation of isolated structure of FePt ordered phase.     

Structural and magnetic properties of FePt films grown on Cr1-xMox underlayers

FePt films were deposited on Cr_1-xMo_x underlayers by dc magnetron sputtering. The effects of the Mo content in the underlayers, underlayer thickness, substrate temperature, and FePt film thickness on the structural and magnetic properties of the FePt films were studied. Experimental results showed that the (200) textured Cr₉₀Mo₁₀ film was a promising underlayer for promoting the growth of the L1₀ FePt films with (001) preferred orientation at relatively low temperatures. With the Cr₉₀Mo₁₀ underlayers, the ordering process of the FePt films could start at 200 °C. Both the ordering degree and the out-of-plane coercivity (H_c) of the FePt films increased with an increase in substrate temperature. When the substrate temperature was ≥250 °C, the FePt films grown on the Cr₉₀Mo₁₀ underlayers could have the (001) preferred orientation. The FePt films grown on the Cr₉₀Mo₁₀ underlayers at different temperatures showed a continuous microstructure. The out-of-plane coercivities H_c decreased while the ordering degree increased with increased FePt film thickness, which could be due to the variation of the magnetic reversal mechanism from rotation predominant mode to domain wall motion predominant mode. PACS 68.55.Jk; 75.50.Ss     

Behavior of N atoms in atomic-order nitrided Si0.5Ge0.5(1 0 0)

Behavior of N atoms in atomic-order nitrided Si_0.5Ge_0.5(1 0 0) by heat treatment in Ar at 600 °C was investigated by X-ray photoelectron spectroscopy (XPS). For thermal nitridation by NH₃ at 400 °C, nitridation of surface Si atoms tends to proceed preferentially over nitridation of surface Ge atoms. It is also clear that, with the heat treatment, nitridation of Si atoms proceeds by transfer of N atoms from Ge atoms. Angle-resolved XPS results show that Ge fraction beneath the surface nitrided layer increases significantly at 600 °C compared to the initial surface. These results indicate that preferential nitridation of Si atoms at surface over Ge atoms induces Ge segregation beneath the surface nitrided layer at higher temperatures above 400 °C.     

Microstructural and magnetic studies of L10 FePt–SiO2 nano-composite thin film with columnar structure for perpendicular magnetic recording

(Fe₅₀Pt₅₀)_100−x-(SiO₂)_x films (x=0–30 vol%) were grown on a textured Pt(0 0 1)/CrRu(0 0 2) bilayer at 420 °C using glass substrates. FePt(0 0 1) preferred orientation was obtained in the films. Interconnected microstructure with an average grain size of about 30 nm is observed in the binary FePt film. As SiO₂ is incorporated, it precipitates as particles are dispersed at FePt grain boundaries. When the content of SiO₂ is increased to 13 vol%, columnar FePt with (0 0 1) texture separated by SiO₂ is attained. The FePt columns have a length/radius ratio of 2:1. Additionally, the mean grain size is reduced to about 13 nm. The development of this well-isolated columnar structure leads to an enhancement in coercivity by about 44% from 210 to 315 kA/m. As the SiO₂ content exceeds 20 vol%, a significant ordering reduction is found accompanied by a transformation of preferred orientation from (0 0 1) to (2 0 0) and the columnar structure disappears, resulting in a drastic degradation in magnetism. The results of our study suggest that isolated columnar, grain refined, (0 0 1)-textured FePt film can be achieved via the fine control of SiO₂ content. This may provide useful information for the design of FePt perpendicular recording media.     

Luminescence properties of Ge implanted SiO2:Ge and GeO2:Ge films

We have investigated cathodeluminescence (CL) of Ge implanted SiO₂:Ge and GeO₂:Ge films. The GeO₂ films were grown by oxidation of Ge substrate at 550 °C for 3 h in O₂ gas flow. The GeO₂ films on Ge substrate and SiO₂ films on Si substrate were implanted with Ge-negative ions. The implanted Ge atom concentrations in the films were ranging from 0.1 to 6.0 at%. To produce Ge nanoparticles the SiO₂:Ge films were thermally annealed at various temperatures of 600-900 °C for 1 h in N₂ gas flow. An XPS analysis has shown that the implanted Ge atoms were partly oxidized. CL was observed at wavelengths around 400 nm from the GeO₂ films before and after Ge⁻-implantation as well as from SiO₂:Ge films. After Ge⁻-implantation of about 0.5 at% the CL intensity has increased by about four times. However, the CL intensity from the GeO₂:Ge films was several orders of magnitude smaller than the intensity from the 800 °C-annealed SiO₂:Ge films with 0.5 at% of Ge atomic concentration. These results suggested that the luminescence was generated due to oxidation of Ge nanoparticles in the SiO₂:Ge films.     

Solid phase epitaxy of Ge films on CaF2/Si(1 1 1)

At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF₂/Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 °C. Ge films break up into islands if higher annealing temperatures are used as demonstrated combining spot profile analysis low energy electron diffraction (SPA-LEED) with auger electron spectroscopy (AES). Annealing up to 600 °C reduces the lateral size of the Ge islands while the surface fraction covered by Ge islands is constant. The CaF₂ film is decomposed if higher annealing temperatures are used. This effect is probably due to the formation of GeF_x complexes which desorb at these temperatures.     

Structural and surface properties of Si1−xGex thin films obtained by reduced pressure CVD

This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si_1−xGe_x) alloy thin films, deposited by vertical reduced pressure CVD (RPCVD) in the temperature range between 500 and 750 °C and a total pressure of 5 or 10 Torr. The samples exhibited a very uniform good quality films formation, with smooth surface with rms roughness as low as 7 nm for all temperature range, Ge mole fraction up to 32% (at 600 °C), textures of 〈2 2 0〉 preferred orientation at lower temperatures and strong 〈1 1 1〉 at 750 °C, for both 5 and 10 Torr deposition pressures. The ³¹P⁺ and ¹¹B⁺ doped poly-Si_1−xGe_x films exhibited always lower electrical resistivity values in comparison to similar poly-Si films, regardless of the employed anneal temperature or implantat dose. The results indicated also that poly-Si_1−xGe_x films require much lower temperature and ion implant dose than poly-Si to achieve the same film resistivity. These characteristics indicate a high quality of obtained poly-Si_1−xGe_x films, suitable as a gate electrode material for submicron CMOS devices.     

A study of the effect of ZrO2 on the magnetic properties of FePt/ZrO2 multilayer

Fe_xPt_100−x(30 nm) and [Fe_xPt_100−x(3 nm)/ZrO₂]₁₀ (x = 37, 48, 57, 63, 69) films with different ZrO₂ content were prepared by RF magnetron sputtering technique, then were annealed at 550 °C for 30 min. This work investigates the effect of ZrO₂ doping on the microstructural evolution, magnetic properties, grain size, as well as the ordering kinetics of FePt alloy films. The as-deposited films behaved a disordered state, and the ordered L1₀ structure was obtained by post-annealing. The magnetic properties of the films are changed from soft magnetism to hard magnetism after annealing. The variation of the largest coercivities of [Fe_xPt_100−x/ZrO₂]₁₀ films with the Fe atomic percentage, x and differing amounts of ZrO₂ content reveals that as we increase the ZrO₂ content we must correspondingly increase the amount of Fe. This phenomenon suggests that the Zr or O atoms of ZrO₂ preferentially react with the Fe atoms of FePt alloy to form compounds. In addition, introducing the nonmagnetic ZrO₂ can reduce the intergrain exchange interactions of the FePt/ZrO₂ films, and the interactions are decreased as the ZrO₂ content increases, the dipole interactions are observed in FePt/ZrO₂ films as the ZrO₂ content is more than 15%.