Control of crystallographic orientation in L10 FePt films by using Cr and CrW underlayers

The microstructure and magnetic properties of FePt films grown on Cr and CrW underlayers were investigated. The FePt films that deposited on Cr underlayer show (2 0 0) orientation and low coercivity because of the diffusion between FePt and Cr underlayer. The misfit between FePt magnetic layer and underlayer increases by small addition of W element in Cr underlayer or using a thin Mo intermediate layer, which is favorable for the formation of (0 0 1) orientation and the transformation of FePt from fcc to fct phase. A good FePt (0 0 1) texture was obtained in the films with Cr₈₅W₁₅ underlayer with substrate temperature of 400 °C. The FePt films deposited on Mo/Cr underlayer exhibit larger coercivity than that of the films grown on Pt/Cr₈₅W₁₅ because 5 nm Mo intermediate layer depressed the diffusion of Cr into magnetic layer.     

Self-assembled L10 FePt thin films for high-density magnetic recording

A new technique, which utilizes the interlayer diffusion, for preparation of self-assembled nanodot magnetic structures has been proposed. L1₀-phase Pt/FeCu and Pt/FeAg films have been successfully synthesized by this technique. Both the coercivity of Pt/FeCu and Pt/FeAg films exhibited, respectively 4.1 and 8.0 kOe in perpendicular direction. Pt/Fe and Pt/FeAg films show positive values, while Pt/FeCu shows negative value in δm plot. The results indicate that the exchange coupling between the grains has been decoupled in the self-assembled nanodot structure in Pt/FeCu film.     

Assembly of high-anisotropy L10 FePt nanocomposite films

In this paper we report results on the synthesis and magnetic properties of L1₀ FePt nanocomposite films. Three fabrication methods have been developed to produce high-anisptropy FePt films: non-epitaxial growth of (0 0 1)-oriented FePt:X (X=Ag, C) composite films that might be used for perpendicular media; monodispersed FePt(CF_x) core–shell nanocluster-assembled films grown with a gas-aggregation technique and having uniform cluster size and narrow size distribution; and template-mediated self-assembled FePt clusters prepared with chemical synthesis by a hydrogen reduction technique, which has a high potential for controlling both cluster size and orientation. The magnetic properties are controllable through variations in the nanocluster properties and nanostructure. Analytical and numerical simulations have been done for these films, providing better understanding of the magnetization reversal mechanisms. The films show promise for development as magnetic recording media at extremely high areal densities.     

Texture development and magnetic properties of [ZrO2/CoPt]n/Ag nanocomposite films

The L1₀ CoPt films with (0 0 1) preferred orientation are achieved by fabricating on the glass substrates and post annealing at 600° C for 30 min. The preferred orientation of [ZrO₂/CoPt]_n/Ag films dependence of the Ag underlayer thickness, ZrO₂ and CoPt interlayer thickness is investigated. A large perpendicular magnetic anisotropy and a nearly perfect L1₀ CoPt (0 0 1) texture are obtained in the [ZrO₂ (3 nm)/CoPt (5 nm)]₃/Ag (10 nm) film. The existence of ZrO₂ plays an important role in reducing the intergranular interactions and in determining the size of CoPt grains. Magnetic reversal in textured CoPt films are close to a Stoner-Wolfarth rotation.     

Monolayer deposition of L10 FePt nanoparticles via electrospray route

The deposition monolayers of L1₀ FePt nanoparticles via an electrospraying method and the magnetic properties of the deposited film were studied. FePt nanoparticles in a size of around 2.5 nm in diameter, prepared by a liquid process, were used as a precursor. The size of the deposited particles can be controlled up to 35 nm by controlling the sprayed droplet size that is formed by adjusting the precursor concentration and the precursor flow rate. The droplets were heated in a tubular furnace at a temperature of up to 900 °C to remove all organic compounds and to transform the FePt particles from disordered face centered cubic to an ordered FCT phase. Finally, the particles were deposited in the form of a monolayer film on a silicon substrate by electrostatic force and characterized by scanning electron microscopy. The monolayer of particles was obtained by the high charge on particles obtained during the electrospraying process. The magnetic properties of the monolayer were investigated by magneto-optic Kerr effect measurements. Coercivity up to 650 Oe for a film consisting of 35 nm L1₀ FePt nanoparticles was observed after heat treatment at a temperature of 800 °C.     

Field dependence of spin and orbital moments of Fe in L10 FePt magnetic thin films

The field dependence of spin and orbital magnetic moments of Fe in L1₀ FePt magnetic thin films was investigated using X-ray magnetic circular dichroism (XMCD). The spin and orbital moments were calculated using the sum rules; it was found that the spin and orbital moment of Fe in L1₀ FePt films are ∼2.5 and 0.2 μ_B, respectively. The relative XMCD asymmetry at Fe L₃ peak on the dependence of applied field suggested that the majority magnetic moment of L1₀ FePt films resulted from Fe.     

Anomalous magnetization processes and non-symmetrical domain wall displacements in L10 FePt particulate films

Anomalous magnetization processes and non-symmetrical domain wall displacements in the minor loop of L1₀ FePt particulate films were investigated by magnetization measurements and in situ magnetic force microscopy. Magnetization (M) decreases dramatically on increasing the magnetic field to ∼3 kOe after which M becomes small and constant in the range of 5–20 kOe as observed in the successive measurement of minor loops. The domain wall displacement is non-symmetrical with respect to the field direction. The anomalous magnetization behavior was attributed to the non-symmetrical domain wall displacement and large magnetic field required for domain wall nucleation. Energy calculations from modeling suggest that non-symmetrical domain wall displacement is caused by the existence of metastable domains in which the domain edges are stuck to the particle boundaries.     

Effect of Co underlayer on soft magnetic properties and microstructure of FeCo thin films

High saturation magnetization soft magnetic FeCo (=Fe₆₅Co₃₅) films were prepared using a thin Co underlayer. The FeCo/Co films exhibited a well-defined in-plane uniaxial anisotropy with easy axis coercivity (H_ce) of 10 Oe and hard axis coercivity (H_ch) of 3 Oe, and a half reduction of H_c with H_ce=4.8 Oe and H_ch=1.0 Oe was obtained when the composition was adjusted to 25 at% Co. The effective permeability of the films remains flat around 250 to 800 MHz. The saturation magnetostriction was 5.2×10⁻⁵ and the intrinsic stress was 0.8 GPa in FeCo single layer, both were slightly reduced by Co underlayer. The Co underlayer changed the preferred orientation of the FeCo films from (2 0 0) to (1 1 0) but more significantly, reduced the average grain size from ∼74 to ∼8.2 nm. It also reduced the surface roughness from 2.351 to 0.751 nm. The initial stage and interface diffusion properties were examined by TEM and XPS.     

Low-temperature ordering of L10 FePt phase in FePt thin film with AgCu underlayer

FePt (20 nm) films with AgCu (20 nm) underlayer were prepared on thermally oxidized Si (0 0 1) substrates at room temperature by using dc magnetron sputtering, and the films annealed at different temperature to examine the disorder–order transformation of the FePt films. It is found that the ordered L1₀ FePt phase can form at low annealing temperature. Even after annealing at 300 °C, the in-plane coercivity of 5.2 kOe can be obtained in the film. With increase in annealing temperature, both the ordering degree and coercivity of the films increase. The low-temperature ordering of the films may result from the dynamic stress produced by phase separation in AgCu underlayer and Cu diffusion into FePt phase during annealing.     

Magnetic viscosity effects in epitaxial L10 FePt thin films and exchange spring Fe–FePt bilayers

We have studied the thermal stability of L1₀ FePt thin films and Fe–FePt exchange-spring (ES) bilayers grown on (1 0 0) MgO by RF sputtering. The viscosity curves showed both for FePt films and bilayers a clear logarithmic decay of magnetization. Moreover, it was possible to evaluate the viscosity coefficient S for different applied reverse fields and the activation volumes at the coercivity. The latter values were then related to structural, magnetic and morphological measurements performed on the samples.     

Microstructure of epitaxial SrRuO3 thin films on MgO substrates

SrRuO₃ thin films have been grown on singular (1 0 0) MgO substrates using pulsed laser deposition (PLD) in 30 Pa oxygen ambient and at a temperature of 400-700 °C. Ex situ reflection high-energy electron diffraction (RHEED) as well as X-ray diffraction (XRD) θ/2θ scan indicated that the films deposited above 650 °C were well crystallized though they had a rough surface as shown by atom force microscopy (AFM). XRD Φ scans revealed that these films were composed of all three different types of orientation domains, which was further confirmed by the RHEED patterns. The heteroepitaxial relationship between SrRuO₃ and MgO was found to be [1 1 0] SRO//[1 0 0] MgO and 45°-rotated cube-on-cube [0 0 1] SRO//[1 0 0] MgO. These domain structures and surface morphology are similar to that of ever-reported SrRuO₃ thin films deposited on the (0 0 1) LaAlO₃ substrates, and different from those deposited on (0 0 1) SrTiO₃ substrates that have an atomically flat surface and are composed of only the [1 1 0]-type domains. The reason for this difference was ascribed to the effect of lattice mismatch across the film/substrate interface. The room temperature resistivity of SrRuO₃ films fabricated at 700 °C was 300 μΩ cm. Therefore, epitaxial SrRuO₃ films on MgO substrate could serve as a promising candidate of electrode materials for the fabrication of ferroelectric or dielectric films.     

Perpendicular magnetic anisotropy of FePt film on Si substrate with SiO2 underlayer and B4C interlayers

FePt multilayer composite films with and without B₄C interlayer have been prepared by magnetron sputtering, respectively, and subsequent annealing in vacuum. It was found that the B₄C layers effectively serve as spacers to separate the FePt layers, enhancing (0 0 1) orientation of FePt alloy. Our results show that highly (0 0 1) oriented FePt/B₄C films have significant potential as perpendicular recording media.     

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H_c∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.     

Microstructure and magnetic properties of FePt:Ag nanocomposite films on SiO2/Si(1 0 0)

FePt:Ag nanocomposite films were prepared by pulsed filtered vacuum arc deposition system and subsequent rapid thermal annealing on SiO₂/Si(1 0 0) substrates. The microstructure and magnetic properties were investigated. A strong dependence of coercivity and ordering of the face-central tetragonal structure on both Ag concentration and annealing temperature was observed. With Ag concentration of 22% in atomic ratio, the coercivity got to 6.0 kOe with a grain size of 6.7 nm when annealing temperature was 400 °C.     

Low-temperature ordering and enhanced coercivity of L10-FePt thin films with Al underlayer

FePt multilayer films with and without Al underlayer were prepared by magnetron sputtering on SiO₂ substrate and subsequently annealed in vacuum. Experimental results suggest that the existence of Al underlayer can effectively reduce the ordering temperature and increase the coercivity of FePt films. Due to the slight larger lattice constant of Al underlayer than that of FePt films, [Fe (0.66 nm)/Pt (0.84 nm)]₃₀ films begin to order at 350 °C and the coercivity of them reach to 5.7 kOe after annealing at 400 °C for half an hour.     

Magnetic and Microstructure of Triple C/Co73Cr22Tas/Ti for Perpendicular Media

The magnetic properties and microstructure of triple C/CoCrTa/Ti perpendicular recording films have been studied. Magnetic measurements show that the optimal thickness of Ti underlayer is 4Ohm and that of CoCrTa is 35 nm. The optimal value of substrate temperature is found to be 400℃. A suitable Ti underlayer causes a magnetic layer to have a near-perfect hcp texture, with Co grains in the （002） preferred orientation. The film with needle-like grains is more suitable for perpendicular recording films.     

Fabrication of L10 FePtAg nanoparticles and a study of the effect of Ag during the annealing process

L1₀ ferromagnetic phase FePt nanoparticles containing Ag atoms (FePtAg) were synthesized by means of a liquid phase process, followed by annealing. The addition of Ag to FePt nanoparticles permits annealing to be conducted at a lower temperature (350 °C). This is further accompanied by a subsequent transformation in the crystal phase from the FCC superparamagnetic phase to the FCT (L1₀) ferromagnetic phase. The effects of annealing temperature and the Ag atoms inside the nanoparticles on the magnetic properties of the FePt nanoparticles have been studied. Using electron spectroscopy for the chemical analysis (ESCA), Ag atoms in the L1₀ phase FePtAg nanoparticles were found to be localized on the surface region of the annealed nanoparticles. The Ag atoms function to inhibit the oxidation of FePt, causing the particles to become more stable and to have ferromagnetic properties.     

The role of short exchange length in the magnetization processes of L10-ordered FePt perpendicular media

A three-dimensional micromagnetic model with non-uniform grain size distribution has been built up to study the magnetization process in FePt L1₀ perpendicular media. A 3D model of a single FePt magnetic grain is also set up for comparison. The high magneto-crystalline anisotropy K_u results in a short exchange length l_ex in FePt nanograins. Therefore a magnetic grain is divided into smaller grids on the order of l_ex. The simulated perpendicular and longitudinal loops are consistent with experiments, and it is explained why the measured perpendicular H_c is relatively smaller compared with the saturation field of the longitudinal loop in the FePt perpendicular medium.     

室温生长MgO底层诱导(001)取向FePt薄膜的有序化过程对FePt成分的依赖

室温下通过磁控溅射在表面热氧化的Si基片上生长了MgO/Fe_xPt_100-x双层膜和Fe_xPt_100-x单层膜系列样品，Fe_xPt_100-x的原子成分x=48—68.研究了热处理前后不同成分FePt薄膜的晶体结构和磁性的变化，尤其是MgO底层的引入对FePt的晶体结构和磁性的影响 关键词： FePt(001)薄膜 0相')" href="#">L1₀相     

Effect of microstructure of MgO buffer layer on BaTiO3 grown on silicon substrates

MgO ultrathin films were grown on Si(1 0 0) substrates as buffer layers for the growth of ferroelectric BaTiO₃ thin films by laser molecular beam epitaxy (L-MBE). The deposition process of MgO buffer layers grown on silicon was in situ monitored by reflection high-energy electron diffraction (RHEED). The structure of BaTiO₃ films fabricated on MgO buffers was investigated by X-ray diffraction. Biaxially textured MgO was obtained at high laser energy density, but when the laser energy was lowered, MgO buffer was transformed to the form of texture with angular dispersion with the increase of the film thickness. BaTiO₃ films grown on the former buffer were completely (0 0 1) textured, while those on the latter were (0 0 1) preferred orientated. Furthermore, the fabricated MgO buffers and BaTiO₃ films had atomically smooth surface and interface. All these can reveal that the quality of textured MgO buffer is a key factor for the growth of BaTiO₃ films on silicon.