Advanced granular-type perpendicular recording media

We introduce our recent experimental results for three blocked layers for currently used perpendicular recording media; a recording layer (RL: for recording), a soft magnetic underlayer (SUL: magnetic flux path in writing), and a nonmagnetic intermediate layer (NMIL: underlayer of RL and separation layer between RL and SUL). For the NMIL, uniaxial crystallographic symmetry is an essential requirement for suppression of variant growth of magnetic grains in granular-type RL. From this view point, AlN with wurtzite structure and materials with pseudo-hcp structure, which means fcc structure with stacking faults, were found to be effective. For the SUL, disordered hcp CoIr with negative K_u were found to well suppress both spike noise and track erasure due to a wide distribution of magnetic flux under the return yoke in writing and formation of a Neel wall instead of a Bloch wall in the SUL. For the RL, positive-/negative-K_u stacked media with incoherent switching mode was found to be effective in order to solve the recent write-ability problem for high K_u RL material with high thermal stability. Applying all these items, an advanced medium concept with the stacking structure of “CoPtCr-oxide/CoIr-oxide/CoIr/pseudo-hcp nonmagnetic layer/substrate” is very promising from the view point of (1) switching field reduction of a RL with high K_u material, (2) conventional amorphous SUL free, and (3) conventional NMIL free.     

Anomalous magnetization processes and non-symmetrical domain wall displacements in L10 FePt particulate films

Anomalous magnetization processes and non-symmetrical domain wall displacements in the minor loop of L1₀ FePt particulate films were investigated by magnetization measurements and in situ magnetic force microscopy. Magnetization (M) decreases dramatically on increasing the magnetic field to ∼3 kOe after which M becomes small and constant in the range of 5–20 kOe as observed in the successive measurement of minor loops. The domain wall displacement is non-symmetrical with respect to the field direction. The anomalous magnetization behavior was attributed to the non-symmetrical domain wall displacement and large magnetic field required for domain wall nucleation. Energy calculations from modeling suggest that non-symmetrical domain wall displacement is caused by the existence of metastable domains in which the domain edges are stuck to the particle boundaries.     

Computer simulation of magnetization flop in magnetic tunnel junctions exchange-biased by synthetic antiferromagnets

Computer simulation in a single domain multilayer model is used to investigate magnetization flop in magnetic tunnel junctions, exchange-biased by pinned synthetic antiferromagnets with the multilayer structure NiFe/AlO_x/Co/Ru/Co/FeMn. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy and hence increased coercivity of the Co layers in the synthetic antiferromagnet. However, when the synthetic antiferromagnet is not or weakly pinned, the magnetization directions of the two layers sandwiching AlO_x, which mainly determine the magnetoresistance, are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal MR change from the high MR state to zero, irrespective of the direction of the free layer switching. This emphasizes an importance of a strong pinning of the synthetic antiferromagnet at small cell dimensions. The threshold field for magnetization flop is found to increase linearly with increasing antiferromagnetic exchange coupling between the two Co layers in the synthetic antiferromagnet. The restoring force from magnetization flop to the normal synthetic antiferromagnetic structure is roughly proportional to the resistance to magnetization flop. Irrespective of the magnetic parameters and cell sizes, the state of magnetization flop does not exist near H_a=0, indicating that magnetization flop is driven by the Zeeman energy.     

Synthetic Co50Pt50/Ru/CoFe hard–soft trilayer in spin valves

The influence of deposition power and seedlayer on the properties of hard magnet Co₅₀Pt₅₀ was studied. Co₅₀Pt₅₀(/Co₉₀Fe₁₀)/Ru/Co₉₀Fe₁₀ trilayer was used as pining/pinned layer in spin valves. The influences of different hard layer, soft layer and free layer on exchange bias, interlayer coupling, and magnetoresistance (MR) ratio were studied. Weak antiferromagnetic interlayer coupling was obtained by adjusting the thickness of hard and soft layers. MR of a spin valve with structure Cr2/CoFe0.5/CoPt4/CoFe0.5/Ru0.8/CoFe2.2/Cu2.05/CoFe2.6/Cu1.1/Ta1 reached 10.68% (unit in nm), which is comparable to those of IrMn-based synthetic spin valves. The increment of the coercivity of the free layer is mainly due to the static magnetic interaction between the hard layer and the free layer.     

Magnetoresistance in half-metallic/metallic ferromagnetic junction through silicon

We report spin transport through the silicon in novel magnetic junction with half metallic as free layer and metallic as pinned layer. We used La_0.7Sr_0.3MnO₃ as free layer, FeCo as pinned layer and studied the magnetoresistance through silicon as spacer layer. We fabricated this magnetic tunnel junction using RF/DC sputtering technique over SrTiO₃ substrate. Tunneling magnetoresistance (TMR) measurement for this junction at room temperature was found to be 1.1 %. At 2 K, we found a large magnetoresistance of 396 %. TMR found to be increased with decreasing temperature. The results are discussed.     

Self-assembled L10 FePt thin films for high-density magnetic recording

A new technique, which utilizes the interlayer diffusion, for preparation of self-assembled nanodot magnetic structures has been proposed. L1₀-phase Pt/FeCu and Pt/FeAg films have been successfully synthesized by this technique. Both the coercivity of Pt/FeCu and Pt/FeAg films exhibited, respectively 4.1 and 8.0 kOe in perpendicular direction. Pt/Fe and Pt/FeAg films show positive values, while Pt/FeCu shows negative value in δm plot. The results indicate that the exchange coupling between the grains has been decoupled in the self-assembled nanodot structure in Pt/FeCu film.     

退火对IrMn基磁隧道结多层膜热稳定性的影响

采用磁控溅射方法制备了结构为IrMn/CoFe/AlO_x/CoFe的磁性隧道结多层膜,样品置于真空磁场中进行退火处理. 将在不同温度退火的磁隧道结结构多层膜置于负饱和场中等待,研究退火温度对样品热稳定性的影响. 结果表明:退火提高了多层膜反铁磁层的单轴各向异性能,增加了样品的交换偏置;随着负饱和场等待时间的延长,被钉扎层的磁滞回线向正场偏移,交换偏置单调减小,但退火减弱了这种趋势. 关键词： 磁隧道结 交换偏置 磁化反转     

Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing

Magnetic tunnel junction (MTJ) structures based on underlayer (CoNbZr)/bufferlayer (CoFe)/antiferromagnet (IrMn)/pinned layer (CoFe)/tunnel barrier (AlO_x)/free layer (CoFe)/capping (CoNbZr) have been prepared to investigate thermal degradation of magnetoresistive responses. Some junctions possess a nano-oxide layer (NOL) inside either in the underlayer or bufferlayer. The main purpose of the NOL inclusion was to control interdiffusion path of Mn from the antiferromagnet so that improved thermal stability could be achieved. The MTJs with NOLs were found to have reduced interfacial roughness, resulting in improved tunneling magnetoresistance (TMR) and reduced interlayer coupling field. We also confirmed that the NOL effectively suppressed the Mn interdiffusion toward the tunnel barrier by dragging Mn atoms toward NOL during annealing.     

Field sweep rate dynamics in magnetic tunnel junctions

The dynamical behavior of magnetic tunnel junctions (MTJs) was investigated by varying the magnetic field sweep rate from 0.01 mT/s to 10 T/s in a magneto optical Kerr effect set-up. The bias fields of the pinned and free ferromagnetic electrodes were found to drastically decrease above a field sweep rate of 1 T/s. This decrease in the bias fields coincides with a change in the magnetization reversal process from domain wall motion at low-field sweep rates to domain nucleation at high-field sweep rates. The nucleation of inverse domains in the ferromagnetic layer changes the interfacial spin structure of the antiferromagnetic layer and therefore the magnitude of the exchange bias effect. Furthermore, the nucleation of domains induces a discontinuous magnetic charge density at the tunnel barrier interfaces and this reduces the interlayer coupling between the two ferromagnetic electrodes of the MTJ.     

Magnetic resonance absorption in isolated metal/insulator/metal nanodot arrays with transmission geometry

In this study, we have systematically investigated a magnetic resonance absorption and tunability of absorption wavelength in isolated metal-insulator-metal (MIM) nanodot arrays with transmission geometry. The elemental electromagnetic resonances and their hybridizations are studied using 3-dimensional finite-difference time-domain (FDTD) calculation and resonance properties including the resonance peak tunability, magnetic permeability and quality (Q) factor are characterized with respect to the coupling strength. We have found the existence of electric and magnetic resonance mode in the MIM (Au/MgF₂/Au) structure and the magnetic resonance has larger wavelength tunability than the electric resonance. The absorption cross section calculation revealed that absorption is the dominant extinction process at the magnetic resonance only. Magnetic permeability (μ) calculations for the various MIM parameters showed the maximum value of the imaginary part of μ is 16.1 with Q factor of 9.2 when the size of nanodot is 200 nm and the inter-dot distance is 300 nm. The presented calculations can be used to tune the response of the magnetic resonance absorption with a variable resonance wavelength and Q factor by using the simple MIM structures with transmission geometry.     

Triple convective flow of micropolar nanofluids in double lid-driven enclosures partially filled with LTNE porous layer under effects of an inclined magnetic field

In this paper, free, forced and Marangoni convective flows within an open enclosure partially filled with a porous medium under impacts of an inclined magnetic field are investigated. The forced convection is due to the movement of the side walls, the free convection induces from the heated part in the bottom wall and the Marangoni convection is a responsible on the thermal interaction at the free surface (top wall). The flow domain is partially heated from below and partially filled by a porous medium. The local thermal non-equilibrium model (LTNEM) is used to represent the thermal field in the porous layer (bottom layer) while the two-phase model is used to simulated the micropolar nanofluid behavior. Two cases based on the direction of the movement of the side walls are considered, namely, assisting flow (downward lid motion) and opposing flow (upward lid motion). Numerical analysis based on the finite volume method is conducted and the obtained are presented in terms of the streamlines, isotherms, angular velocity, and the cup-mixing temperature θ_cup, the bulk-averaged temperature θ_ave and the average Nusselt numbers. The controlling parameters, in this situation, are the Darcy number Da, the Marangoni number Ma, the Nield number H, the vortex viscosity Δ, the Biot number Bi and the Hartmann number Ha. The results revealed that the increase in the Nield number enhances the cup-mixing temperature θ_cupand bulk-averaged temperature θ_ave regardless the direction of the side walls motion. Also, the average Nusselt number is boosted as the Marangoni number is grown.     

Magnetic properties of the novel nanocomposite (Zn0.15Ni0.85Fe2O4)0.15/(SiO2)0.85 at room temperature

The value of the effective magnetic anisotropy constant of the ferrimagnetic nanoparticles Zn_0.15Ni_0.85Fe₂O₄ embedded in a SiO₂ silica matrix, determined through ferromagnetic resonance (FMR), is much higher than the magnetocrystalline anisotropy constant. The higher value of the anisotropy constant is due to the existence of surface anisotropy. However, even if the magnetic anisotropy is high, the ferrimagnetic nanoparticles with a 15% concentration, which are isolated in a SiO₂ matrix, display a superparamagnetic (SPM) behavior at room temperature and at a frequency of the magnetization field equal to 50 Hz. The FMR spectrum of the novel nanocomposite (Zn_0.15Ni_0.85Fe₂O₄)_0.15/(SiO₂)_0.85, recorded at room temperature and a frequency of 9.060 GHz, is observed at a resonance field (B_0r) of 0.2285 T, which is substantially lower than the field corresponding to free electron resonance (ESR) (0.3236 T). Apart from the line corresponding to the resonance of the nanoparticle system, the spectrum also contains an additional weaker line, identified for a resonance field of ∼0.12 T, which is appreciably lower than B_0r. This line was attributed to magnetic ions complex that is in a disordered structure in the layer that has an average thickness of 1.4 nm, this layer being situated on the surface of the Zn_0.15Ni_0.85Fe₂O₄ nanoparticles that have a mean magnetic diameter of 8.9 nm.     

Spin-injection mechanism of magnetization reversal and hysteresis of current in magnetic junctions

A novel mechanism is proposed for magnetization reversal by the current of magnetic junctions with two metallic ferromagnetic layers and thin separating nonmagnetic layer. The spin-polarized current flows perpendicularly to the interfaces between the ferromagnetic layers, in one of which the spins are pinned and in the other they are free. No domain structure is formed in the ferromagnetic layers. The current breaks spin equilibrium in the free layer, which manifests itself in the injection or extraction of spins. The nonequilibrium spins interact with the magnetization of the lattice due to the effective field of s-d exchange, which is current dependent. At currents exceeding a certain threshold value, this interaction leads to magnetization reversal. Two threshold currents for magnetization reversal have been obtained theoretically, which are reached as the current increases or decreases, respectively. Thus, the phenomenon of current hysteresis is found. The calculated results are in good agreement with experiments on magnetization reversal by current in three-layer junctions of composition Co(I)/Cu/Co(II) prepared in a pillar form.     

Process of magnetic field penetration into the high-temperature superconductor YBa2Cu3O7−δ

The processes of magnetic field penetration into the ceramic samples of the HTSC YB₂Cu₃O_～6.95 at T<T _c are studied by the methods of internal friction and magnetization measurements. A clearly manifested correlation is observed between the field dependences of the internal friction spectrum parameters (the logarithmic damping decrement Q ^?1 and the resonance frequency f) and the trapped magnetic flux ΔM. The magneto-mechanical approach we used reveals a significant difference in the field dependences of the densities of pinned (N _p) and free (N _f) Abrikosov vortices for H>H _c1.     

A free convective boundary layer in a conducting fluid in the presence of a transverse magnetic field

The properties of free convection in a conducting fluid in laminar regime near a hot solid vertical w all in the presence of a transverse magnetic field are theoretically analyzed. The existence of two regimes of heat transfer from the wall to the fluid are established. In the first regime, at small heights x?x* where the magnetic field effect can be disregarded, heat transfer is described by the well-known results for a free convective boundary layer in a nonconducting fluid with the Nusselt number Nu_x∝x^3/4. In the second regime, at x? x* where the magnetic field plays a crucial role, the dependence of heat transfer on the height and field strength is \(Nu_x \propto {{\sqrt x } \mathord{\left/ {\vphantom {{\sqrt x } B}} \right. \kern-\nulldelimiterspace} B}\). The location of the boundary between these regimes strongly depends on the magnetic field, x*∝ B^?4.     

Free carrier absorption in quantizing magnetic fields: Nonpolar optical phonon scattering

A quantum theory of free carrier absorption in nondegenerate semiconductors and in strong magnetic fields which was previously developed to treat the case when acoustic phonon scattering dominates the free carrier absorption process [1] is extended to treat the case when nonpolar optical scattering is important. When the electromagnetic radiation field is polarized parallel to the direction of the applied magnetic field, results are obtained which are similar to those when acoustic phonon scattering is dominant. The free carrier absorption is an oscillatory function of the magnetic field which on the average increases in magnitude with the magnetic field. However, more structure in the free carrier absorption occurs when nonpolar optical phonon scattering dominates. This is due to the fact that there are two periods in the oscillatory magnetic field dependence associated with the emission or the absorption of optical phonons during the intraband transitions. When the cyclotron frequency exceeds the sum of the photon and optical phonon frequencies, i.e. ω_c > θ + ω_o, the free carrier absorption is predicted to increase linearly with magnetic field when ?ω_c? k_BT. The magnetic field dependence of the free carrier absorption can be explained in terms of phonon-assisted transitions between the various Landau levels in a band involving the emission and absorption of optical phonons.     

Heat and mass transfer of MHD convective boundary layer flow past a stretching porous wall embedded in a porous medium

The hydromagnetic convective boundary layer flow past a stretching porous wall embedded in a porous medium with heat and mass transfer in the presence of a heat source and under the influence of a uniform magnetic field is studied. Exact solutions of the basic equations of motion, heat and mass transfer are obtained after reducing them to nonlinear ordinary differential equations. The reduced equations of heat and mass transfer are solved using a confluent hypergeometric function. The effects of the flow parameters such as a suction parameter (N), magnetic parameter (M), permeability parameter (K _p ), wall temperature parameter (r), wall concentration parameter (n), and heat source/sink parameter (Q) on the dynamics are discussed. It is observed that the suction parameter appears in the boundary condition ensuring the variable suction at the surface. Transverse component of the velocity increases only when magnetic field strength exceeds certain value, but the thermal boundary layer thickness and concentration distribution increase for all values. Results presented in this paper are in good agreement with the work of the previous author and also in conformity with the established theory.     

Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer

MgO-based magnetic tunnel junctions were fabricated, with a thin pinned CoFeB layer in the unbalanced synthetic antiferromagnet part of the stack FeMn/CoFe/Ru/CoFeB. Inverted and normal tunneling magnetoresistance (TMR) values occur at low and high annealing temperatures (T_a), respectively. The TMR ratio remains inverted up to T_a=300 °C and it becomes normal around T_a=350 °C. The exchange bias of FeMn disappears at high T_a. The sign reversal of the TMR ratio is mainly attributed to the disappearance of the exchange bias due to manganese diffusion during the annealing process.     

Hard magnetic properties of ErCo7−xCux [0.3⩽x⩽1] system

We report the observation of excellent hard magnetic properties on purely single phase ErCo_7−xCu_x compounds with x=0.3, 0.5, 0.8 and 1. Cu substitution leads to a decrease in the saturation magnetization, but enhances the uniaxial anisotropy in this system. The large anisotropy field (∼100 kOe) is attributed to the Er and the Co sublattices. Domain wall pinning effect seems to play a crucial role in determining the temperature and field dependences of magnetization in these compounds. The hard magnetic properties obtained at room temperature (RT) are comparable to the best results obtained in other RCo₇ based materials.     

Antiferromagnet IrMn thickness dependence in exchange-biased perpendicular magnetic anisotropy based on CoFe/Pt/CoFe/[IrMn(tIrMn)] multilayers

The effect of the antiferromagnetic IrMn thickness upon the magnetic properties of CoFe/Pt/CoFe/[IrMn(t_IrMn)] multilayers is studied. An oscillatory interlayer coupling (IEC) has been shown in pinned CoFe/Pt(t_Pt)/CoFe/IrMn multilayers with perpendicular anisotropy. The period of oscillation corresponds to about 2 monolayers of Pt. The oscillatory behavior of IEC depends on the nonmagnetic metallic Pt thickness and is thought to be related to the antiferromagnetic ordering induced by the IrMn layer. From the extraordinary Hall voltage amplitude (EHA) curves as function of IrMn thickness, we report that the oscillation dependence of IEC for the [CoFe/Pt/CoFe] multilayer system induced by IrMn with spacer-layer thickness is a important features of perpendicular exchange biased system.