Observation of magnetic domain structure in Terfenol-D by scanning electron acoustic microscopy

The magnetic domain structure in oriented Tb_0.3Dy_0.7Fe_1.92 (Terfenol-D) is investigated by scanning electron acoustic microscopy (SEAM) in a wide frequency range from 75 to 530 kHz. Both secondary electron image and electron acoustic image can be obtained in situ simultaneously. By changing the modulation frequencies, the SEAM can be used as an effective nondestructive method to observe not only the surface topography and domain structure but also the subsurface domain structure and defects. The magnetic domain structure is verified by magnetic force microscopy (MFM). Furthermore, magnetic domains can be observed in both linear and nonlinear imaging modes by SEAM. The contributions to the image contrast are related to the signal generation through the piezomagnetic coupling mechanism, magnetostrictive coupling mechanism, and thermal-wave coupling mechanism.     

Direct observation of room temperature magnetism in (In,Mn)As thin films by magnetic force microscopy

Variable-temperature magnetic force microscopy (MFM) has been performed over the temperature range of 298-348 K on ferromagnetic (In,Mn)As thin films deposited by metal-organic vapor phase epitaxy (MOVPE). Ferromagnetic domains were observed with submicron resolution in both single and two phase (In,Mn)As films, persisting up to 328 K. Isolated cylindrical domains ranging from 100 to 350 nm in diameter with densities of 2-5 × 10⁸ cm⁻² were observed in phase pure films. Longer range magnetic order, in the form of ribbon-like domains up to 1 μm in length, are present in the regions between the cylindrical domains. Two phase (In,Mn)As films produced a well-resolved complex domain structure consisting of 180° parallel and antiparallel domains. Excellent agreement between the temperature dependence of the relative magnetization obtained by MFM and superconducting quantum interference device measurements was observed.     

Magnetic microstructure of candidates for epitaxial dual Heusler magnetic tunnel junctions

Heusler alloys are considered as interesting ferromagnetic electrode materials for magnetic tunnel junctions, because of their high spin polarization. We, therefore, investigated the micromagnetic properties in a prototypical thin film system comprising two different Heusler phases Co₂MnSi (CMS) and Co₂FeSi (CFS) separated by a MgO barrier. The magnetic microstructure was investigated by X-ray photoemission electron microscopy (XPEEM). We find a strong influence of the Heusler phase formation process on the magnetic domain patterns. SiO₂/V/CMS/MgO/CFS and SiO₂/V/CFS/MgO/CMS trilayer structures exhibit a strikingly different magnetic behavior, which is due to pinhole coupling through the MgO barrier and a strong thickness dependence of the magnetic ordering in Co₂MnSi.     

Epitaxial growth and characterization of CaVO3 thin films

Epitaxial thin films of CaVO₃ were synthesized on SrTiO₃, LaAlO₃ and (La_0.27Sr_0.73)(Al_0.65Ta_0.35)O₃ substrates by pulsed laser deposition. All CaVO₃ films, independent of epitaxial strain, exhibit metallic and Pauli paramagnetic behavior as CaVO₃ single crystals. X-ray absorption measurements confirmed the 4+ valence state for Vanadium ions. With prolonged air exposure, an increasing amount of V³⁺ is detected and is attributed to oxygen loss in the near surface region of the films.     

Field dependence of spin and orbital moments of Fe in L10 FePt magnetic thin films

The field dependence of spin and orbital magnetic moments of Fe in L1₀ FePt magnetic thin films was investigated using X-ray magnetic circular dichroism (XMCD). The spin and orbital moments were calculated using the sum rules; it was found that the spin and orbital moment of Fe in L1₀ FePt films are ∼2.5 and 0.2 μ_B, respectively. The relative XMCD asymmetry at Fe L₃ peak on the dependence of applied field suggested that the majority magnetic moment of L1₀ FePt films resulted from Fe.     

Preparation,characterization and magneto-optical investigations of electrodeposited Co/Au films

Au/Co(4–8 ML)/Au single magnetic layers and Au(8 ML)/Co(4 ML)/Au(8 ML)/Co(8 ML)/Au bilayer were sequentially grown by electrodeposition on an Au(1 1 1) buffer layer electrodeposited on Si(1 1 1). The technique used in this work provides full control on the structure and the chemical composition of the different layers (no alloying) as well as on the chemistry at interfaces. scanning tunneling microscopy (STM) and atomic force microscopy (AFM) imaging and X-ray diffraction measurements show that atomically flat continuous Co(0 0 0 1) layers (4–8 ML) can be grown in epitaxy with the Au(1 1 1) substrate and that the 2 nm-thick spacer is also a continuous Au(1 1 1) layer. The Co ultrathin layers (4 and 8 ML) exhibit perpendicular magnetic anisotropy. The lateral magnetic homogeneity and magnetization reversal process have been investigated by scanning magneto-optical Kerr effect (MOKE) magnetometry and global Kerr microscopy. The correlation between magnetization switching behaviour in each layer of the Co-bilayer stack has been evidenced from in-depth sensitive MOKE measurements and microscopy. The strong coupling observed between the two Co layers is attributed to magnetostatic interaction at domain wall boundaries.     

Thickness dependence of X-ray absorption and photoemission in Fe thin films on Si(0 0 1)

To investigate the initial growth of Fe films on Si(0 0 1) and the Fe/Si interface, Fe films at various thicknesses have been systematically studied by soft X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS). The Fe L edge XAS spectrum shows a strong thickness dependence with broader line-width for thinner films. Detailed analysis of the Fe absorption signal as a function of the thickness shows that the broad linewidth of Fe L edge XAS spectra is mostly contributed by the first Fe layer at the Fe/Si interface. In contrast to XAS, Fe 2p photoemission spectra for these films are identical. However, valence band photoemission also shows a strong thickness dependence. Comparing the valence band photoemission spectra of the thin Fe/Si(0 0 1) films with that of pure Si and the thickest Fe film, the difference spectra at all thicknesses show almost identical shape indicating the same origin: the Fe/Si interface. Thus, it is mainly the first Fe layer at Fe/Si layer that is reactive with the Si substrate changing its electronic structure.     

Magnetic properties of field-annealed FeCo thin films

Fe₅₀Co₅₀ thin films with thickness of 30 and 4 nm have been produced by rf sputtering on glass substrates, and their surface has been observed with atomic force microscopy (AFM) and magnetic force microscopy (MFM); MFM images reveal a non-null component of the magnetization perpendicular to the film plane. Selected samples have been annealed in vacuum at temperatures of 300 and 350 °C for times between 20 and 120 min, under a static magnetic field of 100 Oe. DC hysteresis loops have been measured with an alternating gradient force magnetometer (AGFM) along the direction of the field applied during annealing and orthogonally to it. Samples with a thickness of 4 nm display lower coercive fields with respect to the 30 nm thick ones. Longer annealing times affect the development of a harder magnetic phase more oriented off the film plane. The field applied during annealing induces a moderate magnetic anisotropy only on 30 nm thick films.     

Ultrafast electron and magnetization dynamics of thin Ni and Co films on Cu(001) observed by time-resolved SHG

Received: 21 December 1998     

Magnetic properties of FeSiB thin films displaying stripe domains

FeSiB amorphous thin films with thicknesses from 25 to 600 nm have been produced by rf sputtering on Si₃N₄ substrates. A spin reorientation transition has been observed on the as-prepared samples, as a function of thickness and temperature. Spin reorientation transition is shown to depend on the thermal treatments to which the as-prepared samples have been submitted. Static hysteresis loops obtained as a function of temperature, and magnetic force microscopy images taken at room temperature at the remanence and as a function of an applied magnetic field, have been employed to study the magnetic domain configuration of all the samples, and to see how it is affected by sample thickness, measurement temperature and annealing conditions.     

Investigation of ripple structures of thin polycrystalline Co films by magnetic force microscopy

Received: 14 August 1997/Accepted: 14 August 1997     

New applications of the magnetic X-ray circular dichroism method for surface-magnetism investigations in a photoemission electron microscope

It is shown that magnetic X-ray circular dichroism (MXCD) can be exploited in photoemission electron microscopy not only to visualize the domain structure of ferromagnets, but also to perform quantitative measurements of the stray magnetic fields at the domain boundaries. In the general situation, two MXCD images obtained at different extractor voltages are required. In specific cases, however, it suffices to consider a single image, if it is deformed by the stray magnetic fields compared to a known object geometry. The object geometry means its real shape, scratches or other defects. It is also possible to deposit a paramagnetic film structured in the form of stripes or a grid as a reference on the ferromagnetic sample being investigated. Received: 2 August 2001 / Accepted: 6 September 2001 / Published online: 20 December 2001     

TbMnO3 epitaxial thin films by pulsed-laser deposition

Epitaxial TbMnO₃ films have been fabricated on SrTiO₃(001) and LaAlO₃(001) substrates by pulsed laser deposition (PLD), the structure and surface morphology of the films were characterized by X-ray diffraction with Cu K_α radiation and atomic force microscopy. The electrical transport and magnetic properties of the TbMnO₃ films and bulk were examined, the resistivity and the forbidden band width E_g change with epitaxial orientation, semiconductor transport properties are found in the films and bulk, the average of the E_g of the films on SrTiO₃ and on LaAlO₃ is equal to the E_g of the bulk. The two TMO films have different magnetization mode, the magnetization of the film on SrTiO₃ have an analogy to that of TbMnO₃ single crystal.     

Self-organized semiconductor surfaces as templates for nanostructured magnetic thin films

Spontaneous pattern formation during epitaxial growth or ion erosion of semiconductor wafers offers an elegant route towards large-area nanostructured surfaces. In homoepitaxy, kinetics may result in rather uniform three-dimensional islands. In the case of semiconductor heteroepitaxy, strain relief leads to the formation of nanofaceted three-dimensional crystallites, which may self-organize into quasiperiodic arrays. By tuning substrate miscut and film thickness, or growing superlattices, a variety of patterns with different symmetries can be obtained, as will be summarized for the model system of SiGe on Si(001). Since these self-organized nanostructure arrays cover the entire wafer on which they are grown, they can serve as large-area nanopatterned substrates for subsequent deposition of magnetic thin films. It will be demonstrated that such templates allow the study of correlations between magnetic and chemical interfacial roughness, as well as the influence of pattern symmetry on the magnetic anisotropy of thin Co films. Furthermore, shadow deposition of magnetic material onto specially faceted nanostructure arrays allows the fabrication of nanomagnet arrays and the study of their magnetic properties. Received: 31 July 2002 / Accepted: 2 October 2002 / Published online: 5 February 2003 RID="*" ID="*"Corresponding author. Fax: +43-3842/402-760, E-mail: teichert@unileoben.ac.at     

Ordering and grain growth of FePt thin films by annealing

Microstructure variation of FePt thin film upon annealing at elevated temperatures was investigated by transmission electron microscopy (TEM). A special shape aperture was employed to observe the ordered L1₀ phase in the dark-field TEM images. With increasing the annealing temperature, crystal grains formed clusters with gathering of neighboring grains, and crystal grain growth proceeded within the cluster. L1₀ ordered crystal grains were preferentially formed near the grain boundaries, and their sizes grew with increasing the annealing temperature.     

Orientation studies of Si-phthalocyanine sulfonic acids cast on SiOx substrates

Layers of dihydroxy silicon phthalocyanine tetrasulfonic acid and oligo-μ-oxo silicon phthalocyanine tetrasulfonic acid were prepared by solution-casting methods. The purity of the material was checked by X-ray photoemission spectroscopy. The orientation of the molecules in respect to the substrate plane was investigated by angle-dependent near-edge X-ray absorption fine-structure spectroscopy. The morphology was characterized by atomic force microscopy. Most samples exhibited a significant orientation that was accompanied by crystalline structures; others had no orientation at all with a dominant amorphous morphology. This behavior indicates that several preparation parameters affect the crystallinity and the orientation of the phthalocyanines. Received: 16 January 2002 / Accepted: 11 February 2002 / Published online: 3 May 2002 RID="*" ID="*"Corresponding author. Fax: +1-919/515-7331, E-mail: harald_ade@ncsu.edu RID="**" ID="**"Present address: Southern Illinois University, Physics, Mailcode 4401, Carbondale, IL 62901, USA     

Resonant photoemission at the 2p thresholds of Fe,Co, and Ni metal

Resonant photoemission studies have been performed at the 2p soft-x-ray absorption thresholds of Fe, Co, and Ni metal. At resonance, the photoelectron intensity exhibits a strong enhancement in the region of the two-hole satellites, which is shown, however, to be mostly due to an incoherent superposition of a photoemission signal with a more intense signal from anL ₃ M _4,5 M _4,5 Coster-Kronig decay of the core-ionized state. The resonant enhancement of the valence-band photoemission satellite in Ni metal amounts to a factor of 12. In contrast, no photoemission satellites are observed for Fe and Co metal.     

Effect of thickness on the stability of transparent conducting impurity‐doped ZnO thin films in a high humidity environment

The resistivity of transparent conducting Al‐ and Ga‐doped ZnO (AZO and GZO) thin films prepared with a thickness in the range from 20 to 200 nm on glass substrates at a temperature below 200 °C was found to increase with exposure time when tested in a high humidity environment (air at 90% relative humidity and 60 °C). The resistivity stability (resistivity increase) was considerably affected by the thin film thickness. In particular, thin films with a thickness below about 50 nm were very unstable. The increase in resistivity is interpreted as carrier transport being dominated by grain boundary scattering resulting from the trapping of free electrons due to oxygen adsorption on the grain boundary surface. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Oxygen deficiency dependence of magnetic and magnetoresistive properties for La0.5Sr0.5CoO3-x thin films prepared by pulsed laser deposition

The complete (001)-oriented thin films of La_0.5Sr_0.5CoO_3-x (LSCO) are deposited on (001) SrTiO₃ substrates by pulsed laser deposition under reduced oxygen pressure. It is revealed that the c axis of the film stretches with depleting oxygen. The magnetic, electrical, and magnetoresistive properties of the films are characterized by means of various techniques. Significant dependence of these properties on oxygen deficiency in the films is demonstrated, with enhanced magnetoresistance recorded for the samples deposited over a wide range of reduced oxygen pressure. Received: 9 July 1998 / Accepted: 15 January 1999 / Published online: 31 March 1999