Abnormal reduction of coercivity on magnetic cobalt–platinum alloy films

Ultrathin Co–Pt alloy films as substrate were studied by the surface magneto-optical Kerr effect. As the growth of Ni, the films show uniquely high polar Kerr responses without any in-plane signals. The coercivity decreased until the thickness of Ni film was higher than 5 ML. A new surface structure was discovered at 7–10 ML Ni/Co–Pt films by the low-energy electron diffraction. Interestingly, polar Kerr signal and coercivity of the 10 ML Ni/Co–Pt(1 1 1) template film reduced rapidly as Co films were further deposited onto only about 1–2 ML. Then the films show a canted magnetization with a rollback hysteresis in the polar configuration during the growth of Co. Coercivity of the 7 ML Co/Ni/Co–Pt film was found unusually down to almost 100 Oe.The corresponding magic number at around 7 ML of Co in the abnormal reduction of coercivity may be attributed to the cluster formations of Co.     

Magnetic properties of field-annealed FeCo thin films

Fe₅₀Co₅₀ thin films with thickness of 30 and 4 nm have been produced by rf sputtering on glass substrates, and their surface has been observed with atomic force microscopy (AFM) and magnetic force microscopy (MFM); MFM images reveal a non-null component of the magnetization perpendicular to the film plane. Selected samples have been annealed in vacuum at temperatures of 300 and 350 °C for times between 20 and 120 min, under a static magnetic field of 100 Oe. DC hysteresis loops have been measured with an alternating gradient force magnetometer (AGFM) along the direction of the field applied during annealing and orthogonally to it. Samples with a thickness of 4 nm display lower coercive fields with respect to the 30 nm thick ones. Longer annealing times affect the development of a harder magnetic phase more oriented off the film plane. The field applied during annealing induces a moderate magnetic anisotropy only on 30 nm thick films.     

Exchange coupling and remanence enhancement in nanocomposite Nd–Fe–B/FeCo multilayer films

Nd–Fe–B-type hard phase single layer films and nanocomposite Nd₂₈Fe₆₆B₆/Fe₅₀Co₅₀ multilayer films with Mo underlayers and overlayers have been fabricated on Si substrates by rf sputtering. The hysteresis loops of all films indicated simple single loops for fixed Nd–Fe–B layer thickness (10 nm) and different FeCo layer thickness (d_FeCo=1–50 nm). The remanence of these films is found to increase with increasing d_FeCo and the coercivity decrease with increasing d_FeCo. It is shown that high remanence is achieved in the nanocomposite multilayer films consisting of the hard magnetic Nd–Fe–B-type phase and soft magnetic phase FeCo with 20 nm?d_FeCo?3 nm. The sample of maximum energy product is 27 MG Oe for d_FeCo=5 nm at room temperature. The enhancement of the remanence and energy products in nanocomposite multilayer films is attributed to the exchange coupling between the magnetically soft and hard phases.     

Effects of size and interactions on the magnetic behaviour of elliptical (0 0 1)Fe nanoparticles

Arrays of elliptical particles with aspect ratio 1:3 and short axes 50, 100 and 150 nm were prepared by electron-beam lithography and ion-beam milling of epitaxial (0 0 1)Fe films of thicknesses 10 and 20 nm. The domain state of an individual particle imaged by magnetic force microscopy in zero field after demagnetization was observed to change from being bi-domain or multidomain (MD) to stable single domains (SD) as the lateral size and film thickness were decreased. The critical size for SD formation was found to be close to the actual lateral sizes of 100 nm×300 nm and 150 nm×450 nm for the thicknesses of 20 and 10 nm, respectively. Only in the 10 nm thick ellipses of lateral size 100 nm×300 nm, the magnetization reversal may take place through coherent rotation. For all other investigated samples, the experimental switching field is lower than what would be required for this process.     

Dependence of magnetic properties on ferromagnetic layer thickness in trilayer Co/Ge/Co films with granular semiconducting spacer

We have investigated the magnetic properties of trilayer films of Co–Ge–Co. At a fixed thickness of germanium of 3.5 nm, the formation and distribution of metastable amorphous and cubic phases depends on the thickness of the ferromagnetic layer. The portion of the stable hexagonal phase is affected, too. Possible mechanisms for forming the observed magnetic structure are discussed.     

L12 phase formation and giant exchange anisotropy in Mn3Ir/Co–Fe bilayers

The degree of order S of Mn–Ir layers and the exchange anisotropy of Mn–Ir/Co–Fe bilayers were investigated for various chemical compositions of Mn–Ir layers, underlayer materials, and underlayer thicknesses. It was found that: (1) The compositional range over which L1₂-phase Mn₃Ir could be formed is 22–32 at% Ir and giant exchange anisotropy is obtained in this range. (2) Ru is favorable as an underlayer material for avoiding interdiffusion with the Mn–Ir layer during deposition on the temperature elevated substrate. (3) The underlayer thickness could be reduced to 5 nm while maintaining a giant exchange anisotropy in excess of 1 erg/cm².     

Magnetic properties of CoPt–SiNx/Ag nanocomposite films

When the thickness of Ag under layer is 25 nm, the CoPt/Ag film has maximum out-of-plane squareness (S_⊥), minimum in-plane squareness (S_∥), and the largest out-of-plane coercivity (H_c⊥), they are 0.95, 0.35, and 15 kOe, respectively. Different volume percent of SiN_x ceramic materials were co-sputtered with Co₅₀Pt₅₀ films on the Ag under layer to reduce the grain size of the CoPt film. Comparing the X-ray diffraction pattern of CoPt-SiN_x/Ag films without annealing with that of the films which annealed at 600 and 700 °C, it is found that the intensities of CoPt (0 0 1) and CoPt (0 0 2) superlattice lines were reduced after annealing. As the SiN_x content is raised to 50 vol%, the particle size of CoPt is reduced to be about 9 nm.     

Magnetic properties and microstructure study of high coercivity Au/FePt/Au trilayer thin films

High-coercivity Au(60 nm)/FePt(δ nm)/Au(60 nm) trilayer samples were prepared by sputtering at room temperature, followed by post annealing at different temperatures. For the sample with δ=60 nm, L1₀ ordering transformation occurs at 500 °C. Coercivity (H_c) is increased with the annealing temperature in the studied range 400–800 °C. The H_c value of the trilayer films is also varied with thickness of FePt intermediate layer (δ), from 27 kOe for δ=60 nm to a maximum value of 33.5 kOe for δ=20 nm. X-ray diffraction data indicate that the diffusion of Au atoms into the FePt L1₀ lattice is negligible even after a high-temperature (800 °C) annealing process. Furthermore, ordering parameter is almost unchanged as δ is reduced from 60 to 15 nm. Transmission electron microscope (TEM) photos indicate that small FePt Ll₀ particles are dispersed amid the large-grained Au. We believe that the high coercivity of the trilayer sample is attributed to the small and uniform grain sizes of the highly ordered FePt particles which have perfect phase separation with Au matrix.     

Thickness-dependent magnetization reversal in CoZrNb amorphous films

Structure and magnetization of CoZrNb amorphous films prepared by DC magnetron sputtering have been studied as a function of film thickness (t), from 35 to 840 nm. Using comprehensive characterization, we show that the CoZrNb amorphous films possess a single phase and no nanocrystalline can be detected. The magnetic measurements indicate that the magnetization reversal of CoZrNb films is strongly dependent on t. That is, the coercivity is abruptly reduced to be lower than 4 Oe with t increasing from 35 to 105 nm, and then gradually decreases to ∼0.2 Oe as t increases. This coercivity transition versus t is accompanied by the strong magnetization reversal when t is larger than 105 nm. The results reveal that CoZrNb amorphous films with comparatively large film thickness (>100 nm) are suitable for sensors and anti-faked materials.     

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H_c∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.     

Epitaxial MnP thin films: epitaxial growth,magnetic and electrical properties

We have grown 500 Å MnP on undoped GaAs(1 0 0) substrate using solid-source molecular beam epitaxy. In order to characterize the crystal structure of MnP, we performed in-situ reflection high energy electron diffraction and θ–2θ XRD X-ray diffraction studies. From the measurements of superconducting quantum interference device, Quantum Design, MnP thin film shows ferromagnetic ordering at around 291.5 K. It shows a metallic resistivity in MnP thin film.     

Magnetic layer thickness dependence of magnetization reversal in electrodeposited CoNi/Cu multilayer nanowires

The magnetization reversal of electrodeposited CoNi/Cu multilayer nanowires patterned in an array using a hole template has been investigated. The reversal mode is found to depend on the CoNi layer thickness t(CoNi); with increasing t(CoNi) a transition occurs from coherent rotation to a combination of coherent and incoherent rotation at around t(CoNi)=51 nm. The reversal mode has been identified using the magnetic hysteresis loops measured at room temperature for CoNi/Cu nanowires placed at various angles between the directions of the nanowire axis and external fields using a vibrating sample magnetometer. The nanowire samples have a diameter of ∼250 nm and constant Cu layer thickness of 4.2 nm with various t(CoNi) ranging from 6.8 nm to 7.5 μm. With increasing t(CoNi), the magnetic easy axis moves from the direction perpendicular to nanowires to that parallel to the nanowires at around t(CoNi)=51 nm, indicating a change in the magnetization reversal mode. The reversal mode for the nanowires with thin disk-shaped CoNi layers (t(CoNi)=6.8, 12 and 17 nm) is of a coherent rotation type, while that for long rod-shaped CoNi layers (t(CoNi)=150 nm, 1.0, 2.5 and 7.5 μm) can be consistently explained by a combination of coherent rotation and a curling mode. The effects of dipole–dipole interactions between nanowires and between adjacent magnetic layers in each nanowire on the reversal process have been discussed.     

Study of Co thin films deposited on low-index Cu surfaces by photoemission electron microscopy

The domain structures of Co ultrathin film prepared with μm- and mm-dimension laterally were acquired and compared using X-ray Photoemission Electron Microscope (PEEM). Through depositing the Co film with different thickness on two copper single-crystal surfaces; Cu(1 0 0) and Cu(1 1 0), we report the impacts of thin film lateral dimensions, crystal orientations, and film thickness to the domain structures of Co layer.     

Structural and magnetoresistive properties of half metallic Co2Mn1−xSi thin films

Polycrystalline Co₂Mn_1−xSi (CMS) thin films with Mn-deficiency can grow on different types of substrates such as MgO (1 0 0) single crystal, α-sapphire (0 0 0 1) and Si coated with SiO₂ either by using V or Ta/Cu as the seed layer. The magnetic property, especially the coercivity of the CMS thin films strongly depends on the crystalline structure and microstructure of the CMS thin film, hence it is affected by the substrate and also the seed layer. Very soft CMS thin film with coercivity of about 20 Oe has been obtained when MgO (1 0 0) is used as the substrate. Magnetic tunnel junctions (with MR ratio of about 9%–18%) by utilizing the CMS as one of ferromagnetic electrodes have been successfully fabricated. The degradation of the magnetoresistive effect of the MTJ after magnetic annealing is attributed to the diffusion of the Mn-atoms into the tunnel barrier during the annealing process.     

Growth and characterization of ferromagnetic MnAs films on different semiconductor substrates

MnAs thin films were grown by metalorganic vapour-phase epitaxy (MOVPE) on GaAs(0 0 1), Si(0 0 1) and oxidised silicon substrates. All films are crystalline and contain only the ferromagnetic α-MnAs phase. X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements show that films on GaAs(0 0 1) have strong preferential orientation, developing elongated grains parallel to [1 –1 0] GaAs while films on bare and oxidised Si are polycrystalline with irregular-shaped, randomly oriented grains. Magneto-optic Kerr effect (MOKE) measurements show good magnetic properties for films on GaAs, such as strong in-plane anisotropy and squareness of the hysteresis loop in the easy direction. A Curie temperature of 340 K, remarkably higher than the bulk material (315 K), was found for a 65 nm thick film on GaAs. Films grown on bare and oxidised silicon wafers had lower Curie temperature and were magnetically isotropic.     

Controlled fabrication of nano-scale double barrier magnetic tunnel junctions using focused ion beam milling method

The controlled fabrication method for nano-scale double barrier magnetic tunnel junctions (DBMTJs) with the layer structure of Ta(5)/Cu(10)/Ni₇₉Fe₂₁(5)/Ir₂₂Mn₇₈(12)/Co₆₀Fe₂₀B₂₀(4)/Al(1)–oxide/Co₆₀Fe₂₀B₂₀(6)/Al(1)–oxide/Co₆₀Fe₂₀B₂₀(4)/Ir₂₂Mn₇₈(12)/Ni₇₉Fe₂₁(5)/Ta(5) (thickness unit: nm) was used. This method involved depositing thin multi-layer stacks by sputtering system, and depositing a Pt nano-pillar using a focused ion beam which acted both as a top contact and as an etching mask. The advantages of this process over the traditional process using e-beam and optical lithography in that it involve only few processing steps, e.g. it does not involve any lift-off steps. In order to evaluate the nanofabrication techniques, the DBMTJs with the dimensions of 200 nm×400 nm, 200 nm×200 nm nano-scale were prepared and their R–H, I–V characteristics were measured.     

Thickness dependence of electroresistance in La0.67Ca0.33MnO3 epitaxial films

The electroresistance (ER) of La_0.67Ca_0.33MnO₃ (LCMO) epitaxial thin films with different thicknesses was studied. For the 110 nm thick LCMO film, its ER shows a maximum at T_p, where the resistance shows a peak, and decreases to zero at lower temperatures. While for the 30 nm thick LCMO film, its ER is remarkable in a wide temperature range. Another interesting observation in this work is that the electric current can tune the magnetoresistance of the ultrathin LCMO thin film. The results were discussed by considering the coexistence of ferromagnetic metallic phase with the charge ordered phase, and the variation of the phase separation with film thickness and electric current. This work also demonstrates that electric current can tune the magnetoresistance of the manganites, which is helpful for their applications.     

Highly porous nickel oxide thin films prepared by a hydrothermal synthesis method for electrochromic application

We report NiO nanowall thin films prepared by a facile hydrothermal synthesis method and their electrochromic application. The as-prepared porous nanowall NiO thin films show a highly porous structure built up by many interconnected nanoflakes with a thickness of about 30 nm. The electrochromic performances of the NiO films are characterized by means of UV–vis spectroscopy and cyclic voltammetry (CV) measurements. The effect of the annealing temperature on electrochromic properties is discussed. The NiO nanowall film annealed at 300 °C exhibits much better electrochromic performance than those counterparts annealed at higher temperature. The film annealed at 300 °C exhibits a noticeable electrochromism with reversible color changes from transparent to brown dark and presents a transmittance variation with 77% at 550 nm. The NiO nanowall film also shows good reaction kinetics with fast switching speed, and the coloration and bleaching times are 3 s and 4 s, respectively. The improved electrochromic performances are due to the porous morphological characteristics with fast ion and electron transfer resulting in fast reaction kinetics and high color contrast.     

Effect of Co layer thickness on structural and magnetic properties of C/Co/C films

Granular C/Co/C films have been prepared by magnetron sputtering from C and Co onto glass substrates at room temperature and subsequent in situ annealing. It has been found that the structure and magnetic properties of the C/Co/C films depend strongly on the Co layer thickness. Vibrating sample magnetometer measurements indicate that the in-plane coercivities reach maximum in 20 nm Co thickness of both as-deposited and annealed films. The squareness ratio of annealed films was more than 0.8. X-ray diffraction shows that majority Co nanograins are formed as the hexagonal-close-packed (HCP) structure in 20 nm Co thickness with annealing at 400 °C. Scanning probe microscope was used to scan surface morphology and magnetic domain structures. The values of the surface roughness were lower than 0.6 nm in all annealed samples. The average magnetic cluster size was estimated to be about 10 nm in annealed 20 nm Co thickness films.