Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) comprising amorphous Co_70.5Fe_4.5Si₁₅B₁₀, possessing low saturation magnetization of 560 emu/cm³, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.     

Field-and Current-Driven Magnetization Reversal and Dynamic Properties of CoFeB-MgO-Based Perpendicular Magnetic Tunnel Junctions

We report a perpendicular magnetic tunnel junction(p MTJ) cell with a tunnel magnetoresistance(TMR) ratio of nearly 200% at room temperature based on Co Fe B/Ta/Co Fe B as the free layer(FL) and a synthetic antiferromagnetic(SAF) multilayer [Pt/Co]/Ru/[Pt/Co]/Ta/Co Fe B as the reference layer(RL). The field-driven magnetization switching measurements show that the p MTJs exhibit an anomalous TMR hysteresis loop. The spin-polarized layer Co Fe B of SAF-RL has a lower critical switching field than...     

Large spin Hall effect and tunneling magnetoresistance in iridium-based magnetic tunnel junctions

Magnetic tunnel junctions(MTJs) switched by spin-orbit torque(SOT) have attracted substantial interest owing to their advantages of ultrahigh speed and prolonged endurance. Both field-free magnetization switching and high tunneling magnetoresistance(TMR) are critical for the practical application of SOT magnetic random access memory(MRAM). In this work, we propose an MTJ structure based on an iridium(Ir) bottom layer. Ir metal is a desirable candidate for field-free SOT switching owing to its strong intrinsic spin Hall conductivity(SHC), which can be enhanced via doping. Herein, we study TMR in Ir-based MTJs with symmetric and asymmetric structures. Ir-based MTJs exhibit large TMR, which can be further enhanced by heavy metal symmetry owing to the resonant tunneling effect. Our comprehensive investigations illustrate that Ir-based MTJs are promising candidates for realizing SOT switching and high TMR.     

磁存储器环形带切口结构自由层磁化反转的微磁模拟

针对基于磁性隧道结的赝自旋阀磁随机存储器, 使用带斜面切口环形结构自由层, 抛弃采用厚度改变矫顽力的方式, 降低了磁性隧道结的面积电阻, 改进了垂直电流磁随机存储器. 通过集成工艺中淀积的二次效应生成磁环的切口, 利用微磁学方法计算分析了自由层的磁化反转特性, 结果表明该模型具有低串扰、低面积电阻、高磁阻率以及较强的抗干扰性能. 关键词： 自由层结构 磁化翻转 微磁 VMRAM     

Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions

We conducted a detailed study of hard axis magnetic field (H_hard) dependence on current-induced magnetization switching (CIMS) in MgO-based magnetic tunnel junctions (MTJs) with various junction sizes and various uniaxial anisotropy fields. The decreases in critical current density (J_c) and the intrinsic critical current density (J_c0) estimated from the pulse duration dependence on J_c in CIMS are observed when applying H_hard for all MTJs. The decrease in energy barrier of CIMS is also observed except for the largest sample. These results indicate that the reduction of J_c is attributable to both the increase of spin-transfer efficiency and the decrease in energy barrier in the case of applying H_hard. The J_c0 decreases with increase in the mutual angle between the direction of magnetization and the easy axis (θ_f), which is consistent with the theoretical prediction proposed by Slonczewski. The degree of the reduction of J_c0 for the same value of H_hard decreases with decreasing size of MTJs. This behavior is considered to be related to not only decrease in θ_f due to the increase in anisotropy field in MTJs, but also to the increase in the variance of the initial angle of magnetization due to the thermally activated magnon excitation. The stable switching endurance related to CIMS was observed in a wide range of MTJ sizes when applying H_hard. Moreover, we proposed a new architecture and a new switching method considering write disturbance. These results would be useful for application to spin memory and other spin-electronic devices.     

Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing

Magnetic tunnel junction (MTJ) structures based on underlayer (CoNbZr)/bufferlayer (CoFe)/antiferromagnet (IrMn)/pinned layer (CoFe)/tunnel barrier (AlO_x)/free layer (CoFe)/capping (CoNbZr) have been prepared to investigate thermal degradation of magnetoresistive responses. Some junctions possess a nano-oxide layer (NOL) inside either in the underlayer or bufferlayer. The main purpose of the NOL inclusion was to control interdiffusion path of Mn from the antiferromagnet so that improved thermal stability could be achieved. The MTJs with NOLs were found to have reduced interfacial roughness, resulting in improved tunneling magnetoresistance (TMR) and reduced interlayer coupling field. We also confirmed that the NOL effectively suppressed the Mn interdiffusion toward the tunnel barrier by dragging Mn atoms toward NOL during annealing.     

Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy.     

利用金属掩模法制备钉扎型磁性隧道结

利用金属掩模法和Ir22Mn78合金反铁磁钉扎层，制备了四种钉扎型的Py/Al2O3/Py，Py/Al2O3/Co，Co/Al2O3/Py和Co/Al2O3/Co磁性隧道结，坡莫合金的成分为Py＝Ni79Fe21.例如：利用狭缝宽度为100?μm的金属掩模，直接制备出室温隧穿磁电阻比值为17.2%的磁性隧道结Co/Al2O3/Co，其结电阻为76Ω,结电阻和结面积的积矢为76×10_{4Ωμm2，自由层的偏转场为1114?A/m，并且在外加磁场0.1114A·m-1之间时室温磁电阻比值 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 金属掩模}     

Field sweep rate dynamics in magnetic tunnel junctions

The dynamical behavior of magnetic tunnel junctions (MTJs) was investigated by varying the magnetic field sweep rate from 0.01 mT/s to 10 T/s in a magneto optical Kerr effect set-up. The bias fields of the pinned and free ferromagnetic electrodes were found to drastically decrease above a field sweep rate of 1 T/s. This decrease in the bias fields coincides with a change in the magnetization reversal process from domain wall motion at low-field sweep rates to domain nucleation at high-field sweep rates. The nucleation of inverse domains in the ferromagnetic layer changes the interfacial spin structure of the antiferromagnetic layer and therefore the magnitude of the exchange bias effect. Furthermore, the nucleation of domains induces a discontinuous magnetic charge density at the tunnel barrier interfaces and this reduces the interlayer coupling between the two ferromagnetic electrodes of the MTJ.     

Spin-transfer switching in MgO magnetic tunnel junction nanostructures

Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magnetoresistance ratio of up to 160% and the average intrinsic switching current density (J_c0) down to 2 MA/cm², which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlO_x MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed.     

Advanced granular-type perpendicular recording media

We introduce our recent experimental results for three blocked layers for currently used perpendicular recording media; a recording layer (RL: for recording), a soft magnetic underlayer (SUL: magnetic flux path in writing), and a nonmagnetic intermediate layer (NMIL: underlayer of RL and separation layer between RL and SUL). For the NMIL, uniaxial crystallographic symmetry is an essential requirement for suppression of variant growth of magnetic grains in granular-type RL. From this view point, AlN with wurtzite structure and materials with pseudo-hcp structure, which means fcc structure with stacking faults, were found to be effective. For the SUL, disordered hcp CoIr with negative K_u were found to well suppress both spike noise and track erasure due to a wide distribution of magnetic flux under the return yoke in writing and formation of a Neel wall instead of a Bloch wall in the SUL. For the RL, positive-/negative-K_u stacked media with incoherent switching mode was found to be effective in order to solve the recent write-ability problem for high K_u RL material with high thermal stability. Applying all these items, an advanced medium concept with the stacking structure of “CoPtCr-oxide/CoIr-oxide/CoIr/pseudo-hcp nonmagnetic layer/substrate” is very promising from the view point of (1) switching field reduction of a RL with high K_u material, (2) conventional amorphous SUL free, and (3) conventional NMIL free.     

Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

To study the influence of CoFeB/MgO interface on tunneling magnetoresistance(TMR),different structures of magnetic tunnel junctions(MTJs) are successfully prepared by the magnetron sputtering technique and characterized by atomic force microscopy,a physical property measurement system,x-ray photoelectron spectroscopy,and transmission electron microscopy.The experimental results show that TMR of the CoFeB/Mg/MgO/CoFeB structure is evidently improved in comparison with the CoFeB/MgO/CoFeB structure because the inserted Mg layer prevents Fe-oxide formation at the CoFeB/MgO interface,which occurs in CoFeB/MgO/CoFeB MTJs.The inherent properties of the CoFeB/MgO/CoFeB,CoFeB/Fe-oxide/MgO/CoFeB and CoFeB/Mg/MgO/CoFeB MTJs are simulated by using the theories of density functions and non-equilibrium Green functions.The simulated results demonstrate that TMR of CoFeB/Fe-oxide/MgO/CoFeB MTJs is severely decreased and is only half the value of the CoFeB/Mg/MgO/CoFeB MTJs.Based on the experimental results and theoretical analysis,it is believed that in CoFeB/MgO/CoFeB MTJs,the interface oxidation of the CoFeB layer is the main reason to cause a remarkable reduction of TMR,and the inserted Mg layer may play an important role in protecting Fe atoms from oxidation,and then increasing TMR.     

Evolution of microcrystalline growth pattern by ultraviolet spectroscopic ellipsometry on Si:H films prepared by Hot-Wire CVD

Ultra-violet spectroscopic ellipsometry has been applied successfully to determine the evolution of μc-Si:H film structure, including incubation layer, bulk layer and the growth zone and surface over-layer, their individual thickness and composition. In view of the availability of a significantly high atomic H density in H₂-diluted SiH₄ ensemble in Hot-Wire CVD, microcrystallization seems to be achieved easily at a low substrate temperature. Atomic H induced etching at the growing network has been identified as instrumental in controlling the microcrystallization in Si:H. Sharp elimination of the incubation layer as well as surface roughness and significant improvement in the overall crystallinity was obtained on increase in H₂ dilution to SiH₄. A H₂ dilution limited sharp transition from an amorphous dominated (a+μc)-Si mixed phase to a virtually amorphous free μc-Si phase has been identified. However, enhanced atomic H reactivity at the growth zone beyond the attainment of the amorphous free bulk and the surface layer induces porosity in the network and a gradual deviation from crystallinity.     

Controlling the demagnetizing field of an in-plane free layer by exchange coupling with a perpendicular multilayer

The demagnetizing field of a Co₅₀Fe₅₀ free layer in an in-planemicron-sized magnetic tunnel junction (MTJ) can be partially compensated by exchangecoupling with a [Co₉₀Fe₁₀/Pt] _N multilayer with perpendicular magnetic anisotropy via a Ru interlayer. The perpendicularanisotropy for N = 5 is optimized for nominal CoFe and Pt thicknessof 0.4 nm and 1.0 nm, respectively. An increase of tunnel magnetoresistance (TMR) from 2%to 75% is observed in MTJs as the free layer thickness, t variesfrom 1.0 nm to 3.0 nm. A phenomenological model is developed to interpret the TMRdependence in terms of the free layer magnetization rotation from in-plane to out-of-planewith decreasing t, a consequence of interlayer exchange coupling with theperpendicular multilayer. We suggest that this strategy could significantly reduce theswitching current density in such MTJs.     

Biased magnetization reversal in bi-phase multilayer microwires

We report on the magnetic behaviour of a novel family of two-magnetic-phase multilayer microwires consisting of: (i) a bistable FeSiB glass-coated amorphous microwire as soft nucleus, and (ii) a polycrystalline CoNi outer microtube as harder layer. Such bi-phase microwires are prepared by combined quenching and drawing plus sputtering and electroplating techniques. The stray field produced by the harder outer layer after premagnetizing it to saturation is used to bias the magnetization reversal process of the soft nucleus via dipolar magnetostatic coupling. A detailed analysis of the asymmetric low-field magnetization reversal process of the soft nucleus is presented together with the study of the fluctuating switching field and its asymmetric behaviour. The study of the domain wall characteristics under the presence of a nucleation coil at one end of the microwire allows us to draw conclusions on the role of the bias field generated by the premagnetized hard outer layer.     

Spin-dependent tunneling in magnetic tunnel junctions with a layered antiferromagnetic Cr(001) spacer: role of band structure and interface scattering

The tunnel magnetoresistance effect (TMR), which is intrinsically determined by the interface monolayer of an electrode, was realized by using magnetic tunnel junctions (MTJs) with a single-crystal Cr(001) layer inserted between a tunnel barrier and an electrode. The MTJs showed an oscillation of the TMR ratio as a function of the thickness of the Cr(001) layer with a period of 2 monatomic layers, which corresponds to the layered antiferromagnetic structure of Cr(001). These oscillations originate from electron scattering at the interface, due to the mismatching of the symmetry of the wave functions and band structure in Cr(001).     

Spin torque transfer structure with new spin switching configurations

Spin torque transfer structures with new spin switching configurations are proposed, fabricated and investigated in this paper. The non-uniform current-induced magnetization switching is implemented based on both GMR and MTJ nano devices. The proposed new spin transfer structure has a hybrid free layer that consists of a layer with conductive channels (magnetic) and non-conductive matrix (non-magnetic) and traditional free layer(s). Two mechanisms, a higher local current density by nano-current-channels and a non-uniform magnetization switching (reversal domain nucleation and growth) by a magnetic nanocomposite structure, contribute in reducing the switching current density. The critical switching current density for the new spin transfer structure is reduced to one third of the typical value for the normal structure. It can be expected to have one order of magnitude or more reduction for the critical current density if the optimization of materials and fabrication processes could be done further. Meanwhile, the thermal stability of this new spin transfer structure is not degraded, which may solve the long-standing scaling problem for magnetic random access memory (MRAM). This spin transfer structure, with the proposed and demonstrated new spin switching configurations, not only provides a solid approach for the practical application of spin transfer devices but also forms a unique platform for researchers to explore the non-uniform current-induced switching process.     

Thermally assisted writing for perpendicular MRAM

Spin valves composed of TbCo/CoFe/Cu/CoFe/TbFeCo were fabricated with perpendicular magnetization and GMR ratios of 4.5%. The (TbCo/CoFe) layers and (CoFe/TbFeCo) layers are referred to the free and the pinned layers, respectively. The compositions of two layers were chosen to have a lower Curie temperature (130 °C) but higher coercivity (13.2 kOe) of the free layer at room temperature than those of the pinned layer; therefore, the free layer is quite stable at room temperature but its magnetization can be easily switched at a relatively low temperature. Spin valves were patterned into 100-μm-wide cells and their coercivity was reduced with increasing writing current due to the temperature rise by current-heating. When the current density of the writing current was increased to 2.1×10⁶ A/cm², the required switching field for the free layer was only 10 Oe.     

The influence of glass coating on the single domain wall potential in amorphous glass-coated Fe-based microwires

The effect of the glass coating on the single domain wall potential in amorphous glass-coated Fe-based microwire has been studied by the switching field distribution technique. The thermoactivated mechanism model is used to describe the thermally activated switching through the complex energy barrier in amorphous FeSiB microwires. Glass removal leads to the increase of the probability of the thermally activated switching pointing to the decrease of the energy barrier.     

Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions

MgO-based magnetic tunnel junctions (MTJs) with a layer sequence Ir₂₂Mn₇₈ or Fe₅₀Mn₅₀ (10 nm)/CoFe (2 nm)/Ru (0.85 nm)/CoFeB (0.5?t<2 nm)/MgO (2.5 nm)/CoFeB (3 nm) have been fabricated. The bias voltage dependence of tunneling magnetoresistance (TMR) is given as a function of the annealing temperature for these MTJs, which shows the TMR ratio changes its sign from inverted to normal at a critical bias voltage (V_C) when an unbalanced synthetic antiferromagnetic stack CoFe/Ru/CoFeB is used. V_Cs change with the thickness of the pinned CoFeB and annealing temperature, which implies one can achieve different V_Cs by artificial control. The asymmetric V_C values suggest that a strong density-of-states modification occurs at bottom oxide/ferromagnet interface.