Characteristics of persistent spin current components in a quasi-periodic Fibonacci ring with spin–orbit interactions: Prediction of spin–orbit coupling and on-site energy

In the present work we investigate the behavior of all three components of persistent spin current in a quasi-periodic Fibonacci ring subjected to Rashba and Dresselhaus spin–orbit interactions. Analogous to persistent charge current in a conducting ring where electrons gain a Berry phase in presence of magnetic flux, spin Berry phase is associated during the motion of electrons in presence of a spin–orbit field which is responsible for the generation of spin current. The interplay between two spin–orbit fields along with quasi-periodic Fibonacci sequence on persistent spin current is described elaborately, and from our analysis, we can estimate the strength of any one of two spin–orbit couplings together with on-site energy, provided the other is known.     

Perfect spin polarization in symmetric two-terminal mesoscopic rings

Spin-polarized transport through an Aharonov–Bohm (AB) semiconductor mesoscopic ring is investigated in the presence of both the Rashba spin–orbit interaction (RSOI) and the Dresselhaus spin–orbit interaction (DSOI). The ring symmetrically bridges two input and output electrodes. Based on tight-binding model and Green?s function formalism, we find that for AB fluxes other than integer or half-integer multiples of the flux quanta the ring acts as a spin selective device with unit efficiency only when the difference between strengths of RSOI and DSOI is nonzero and small. Results of this study can be used to design a nonmagnetic-material-based perfect spin filter.     

Spin Hall effect and spin current generation in two-dimensional systems with random Rashba spin–orbit coupling

We consider a new effect induced by spin–orbit coupling in a two-dimensional electron gas confined in a semiconductor quantum well, i.e. the possibility of spin current generation by fluctuating random Rashba spin–orbit interaction, with the corresponding mean value of the interaction being equal to zero. Our main results suggest that – in contrast to the spatially uniform Rashba spin–orbit interaction – the spin Hall effect does not vanish for typical disorder strengths. We also point out some other possibilities of using such a random Rashba coupling for the generation of spin density and spin current in two-dimensional nonmagnetic structures.     

Rashba–Dresselhaus double refraction in a two-dimensional electron gas

We investigate the ballistic transport properties of an electron traversing through a two-dimensional electron gas with the Rashba and Dresselhaus spin–orbit coupling (R–D SOC) coexistent. A nonzero incident angle is considered. The relation between the transmission and the incident angle, the interfacial scattering strength, the length of the SOC region and the SOC intensity are revealed. The transmission strength decays when the incident angle is larger than a critical angle. The transport spin polarization is remarkably modulated by the coaction of the two types of SOC.     

Equal coupling strength approach to spin precession effects concerning Rashba and Dresselhaus spin–orbit interactions in the presence of in-plane magnetic fields

The influence of Rashba and Dresselhaus spin–orbit interactions on the electronic properties of quasi one-dimensional systems like InAs quantum wires is discussed in the presence of in-plane magnetic fields. One shows that equal coupling strength conditions are provided specifically by the commutativity of two-dimensional constituents of velocity and current operators. The interesting point is that equal strength spin–orbit couplings one deals with proceed in conjunction with related spin conservations, which amounts to account for selected orientations of the magnetic field. Accordingly, the in-plane magnetic fields should be directed solely along the bisectrices. Other angles may be conceivable, but in this case spin conservations alluded to above are lost. Such results open the way to a consistent derivation of the equal coupling strength limit of the energy, which leads in turn to the derivation of novel spin-precession effects. A related effective gyromagnetic factor has also been established.     

Determination of the Rashba and Dresselhaus coupling constants using the conductance of a ballistic nanowire

We study the conductance steps of a ballistic nanowire in the presence of a harmonic potential, an in-plane magnetic field, and spin–orbit interactions induced by Rashba and Dresselhaus effects. Calculations of the conductance, at low temperature, using the Landauer–Büttiker formalism, reveal different patterns of steps that are strongly dependent on the magnetic field. Such dependence provides a powerful tool for determining the strengths of the spin–orbit interaction independently, especially in nanowires with low carrier density.     

Effect of in-plane magnetic field on spin polarization in the presence of the Dresselhaus spin–orbit effect

In this paper, we theoretically study the effect of the in-plane magnetic field on spin polarization in the presence of the Dresselhaus spin–orbit effect. It is shown that the large spin polarization can be achieved in such a nanostructure due to the effects of both the Dresselhaus spin–orbit term and the in-plane magnetic field, but the latter plays a main role in the tunneling process. It is also shown that with the increase of in-plane magnetic field, the degree of spin splitting obviously becomes larger.     

Bias-dependent spin relaxation in a -InAs/AlSb 2DES

Manipulation of electron spin is a critical component of many proposed semiconductor spintronic devices. One promising approach utilizes the Rashba effect by which an applied electric field can be used to reduce the spin lifetime or rotate spin orientation through spin–orbit interaction. The large spin–orbit interaction needed for this technique to be effective typically leads to fast spin relaxation through precessional decay, which may severely limit device architectures and functionalities. An exception arises in [1 1 0]-oriented heterostructures where the crystal magnetic field associated with bulk inversion asymmetry lies along the growth direction and in which case spins oriented along the growth direction do not precess. These considerations have led to a recent proposal of a spin-FET that incorporates a [1 1 0]-oriented, gate-controlled InAs quantum well channel. We report measurements of the electron spin lifetime as a function of applied electric field in a [1 1 0]-InAs 2DES. Measurements made using an ultrafast, mid-IR pump-probe technique indicate that the spin lifetime can be reduced from its maximum to minimum value over a range of less than 0.2 V per quantum well at room temperature.     

Mesoscopic Fano effect modulated by Rashba spin–orbit coupling and external magnetic field

By employing non-equilibrium Green's function method, the mesoscopic Fano effect modulated by Rashba spin–orbit (SO) coupling and external magnetic field has been elucidated for electron transport through a hybrid system composed of a quantum dot (QD) and an Aharonov–Bohm (AB) ring. The results show that the orientation of the Fano line shape is modulated by the Rashba spin–orbit interaction kRL$k_{R}L$ variation, which reveals that the Fano parameter q will be extended to a complex number, although the system maintains time-reversal symmetry (TRS) under the Rashba SO interaction. Furthermore, it is shown that the modulation of the external magnetic field, which is applied not only inside the frame, but also on the QD, leads to the Fano resonance split due to Zeeman effect, which indicates that the hybrid is an ideal candidate for the spin readout device.     

Electron transport of a quantum wire with spatially periodic spin–orbit coupling

Electron transport properties of an ideal one-dimensional (1D) quantum wire are studied including spatially periodic Rashba spin–orbit coupling (SOC) and Dresselhaus SOC. By comparing with the previous work [S.J. Gong, Z.Q. Yang, J. Phys. Condens. Matter 19 (2007) 446209], two transmission gaps appear in the transmission probability of electrons and their widths are also broadened dramatically. Moreover, it is found that their widths are sensitive not only to the strength of SOCs but also to the length ratio of SOCs segment and non-SOCs segment. In addition, a ‘circle-type’ transmission behavior has been found by tuning the strength of SOCs continuously. Our results may extend the previous work and provide an more effective method to manipulate the current in nanoelectric devices.     

Coverage-dependent spin reorientation transition temperature of the Fe double-layer on W(1 1 0) observed by scanning tunneling microscopy

The magnetic domain structure of the Fe double-layer on W(1 1 0) is investigated using a variable-temperature scanning tunneling microscope. At low temperature the well-known periodic magnetic stripe domain structure is identified via the observation of domain walls. This is done with a non-spin-polarized tip by taking advantage of a spin–orbit coupling effect. At higher temperature a reorientation to an in-plane easy axis is observed. The spin reorientation temperature is found to be coverage-dependent and it is determined for samples with a coverage of 1.5–2.2 atomic layers of Fe on W(1 1 0).     

Current-induced spin accumulation in lateral superlattices with Rashba and Dresselhaus spin–orbit interaction

The current-induced spin accumulation is calculated for a 1D lateral semiconductor superlattice with spin–orbit interaction of the Rashba and Dresselhaus type. Due to its particular symmetry, the Rashba interaction alone only leads to an in-plane component of the magnetization transverse to the applied electric field. When in addition a Dresselhaus contribution is present, this symmetry is lifted, and all components of the magnetization are induced by the electric field. Based on the density-matrix approach, the induced spin polarization is determined as a function of external in-plane electric and magnetic fields.     

Revisiting Rashba and Dresselhaus spin–orbit interactions in electric and magnetic fields: Exact energy results and approximations

In this paper one deals with the derivation of approximations as well as of exact results concerning the energy of a planar electron subjected to both Rashba and Dresselhaus spin–orbit interactions under the influence of a transversal magnetic field and of an additional in-plane electric field. One begins by applying quickly tractable large n$n$-approximations, where n$n$ stands for the oscillator quantum number. Reordering leading terms, we found that the energies characterizing combined spin–orbit interactions proceed specifically in terms of concrete selections of the couplings between spin-up and spin-down states. In addition, interpolations between the exact energies of Rashba and Dresselhaus systems can also be proposed. The derivation of exact bound-state energies in magnetic fields proceeds in turn by selecting spin-up and spin-down states in a suitable manner. This amounts to solving cubic equations presented before, but now the interpretations are rather different. Switching on the electric field leads to reasonably accurate energies proceeding in terms of a ten order polynomial equation. Both energy approximations and exact results serve a deeper understanding, as well as for related comparisons.     

Spin transport in graphene spin–orbit barrier structure

We studied spin-dependent transport in monolayer graphene with a spin–orbit barrier, a narrow strip in which the spin–orbit interaction is not zero. When the Fermi energy is between the two spin-split bands, the structure can be used to generate spin-polarized current. For a strong enough Rashba strength, a thick enough barrier or a low enough Fermi energy, highly spin-polarized current is generated (polarization ∼0.7–0.85$\sim 0.7\text{–}0.85$). Under these conditions, the spin direction of the transmitted electron is approximately perpendicular to the direction of motion. This shows that graphene spin–orbit nanostructures are useful for the development of graphene spintronic devices.     

Spin-dependent Seebeck effect in Aharonov–Bohm rings with Rashba and Dresselhaus spin–orbit interactions

We theoretically investigate the spin-dependent Seebeck effect in an Aharonov–Bohm mesoscopic ring in the presence of both Rashba and Dresselhaus spin–orbit interactions under magnetic flux perpendicular to the ring. We apply the Green's function method to calculate the spin Seebeck coefficient employing the tight-binding Hamiltonian. It is found that the spin Seebeck coefficient is proportional to the slope of the energy-dependent transmission coefficients. We study the strong dependence of spin Seebeck coefficient on the Fermi energy, magnetic flux, strength of spin–orbit coupling, and temperature. Maximum spin Seebeck coefficients can be obtained when the strengths of Rashba and Dresselhaus spin–orbit couplings are slightly different. The spin Seebeck coefficient can be reduced by increasing temperature and disorder.     

Ballistic spin interferometer based on the Rashba and Dresselhaus spin-orbit interactions

By using the Al'tshuler-Aronov-Spivak (AAS) model, we give the amplitude changing with Rashba spin-orbit interaction (SOI) and Dresselhaus SOI strength. In the first idea 1D square loop (SL), Rashba SOI acts on two sides while Dresselhaus SOI acts on the other two sides. In the second SL, we consume Rashba SOI and Dresselhaus SOI act on four sides simultaneously. This model can be replaced by another one that Rashba SOI and Dresselhaus SOI act on every side independently, and each side is twice long. We theoretically illustrate the influence of the Dresselhaus SOI on node position and number. To explain the “half oscillation” phenomenon found in experiment, we apply Dresselhaus SOI to the ideal 1D SL. The conclusion is that the Dresselhaus SOI has a strong effect on the emergence of “half oscillation”.     

Zeeman and spin–orbit effects on the spin-Hall conductance

We show that when a two-dimensional interacting electron gas is submitted to a perpendicular magnetic field, the application of an in-plane electric field E induces a spin current perpendicular to E whose conductivity is quantized. This current can lead to spin accumulation that might be detected by means of optical experiments. The appearance of this intrinsic spin-Hall effect is crucially based on the validity of Kohn's theorem and on the presence of the Zeeman term in the electron Hamiltonian. The possibility of resonant effects in the spin-Hall conductivity due to the combined effect of Rashba and Dresselhaus spin–orbit couplings is discussed.     

Electron spin filtering in all-semiconductor tunneling structures

In this work we briefly review the present day perspectives for exploiting conventional non-magnetic semiconductor nano-technology to design high speed spin-filter devices. In recent theoretical investigations a high spin polarization has been predicted for the ballistic tunneling current in semiconductor single- and double-barrier asymmetric tunnel structures of III–V semiconductors with strong Rashba spin–orbit coupling. We show in this paper that the polarization in the tunneling can probability be sufficiently increased for producing realistic single-barrier structures by including of the Dresselhaus term into consideration.     

Spin transport properties in a non-uniform quantum wire modulated by both Rashba and Dresselhaus spin–orbit couplings

Spin transport properties in a non-uniform quantum wire (QW) in the presence of both the Rashba and Dresselhaus spin–orbit couplings (SOCs) is investigated by using the non-equilibrium Green's function (NEGF) method combined with the Landauer Büttiker formalism. It is found that such a non-uniform quantum wire exhibits considerable spin polarization in its conductance in the influence of both the Rashba and Dresselhaus SOCs, and that the two SOCs' strengths strongly affect both the magnitude and sign of the electron spin polarization. Interestingly, the Rashba and Dresselhaus SOCs play the same modulating role in the electron spin polarization. The proposed nanostructure can potentially be utilized to devise an all-electrical spintronic device.     

Spin-polarized transport in ferromagnet/Rashba quantum dot/ferromagnet system

The transport properties of the Datta and Das's spin transistor with the center normal region (or the quantum dot) having Rashba spin–orbit interaction and electron–electron (e–e) interaction U are investigated. We find while intra-dot level is near or above the chemical potential of the leads, the modulation efficiency of this spin transistor almost is not influenced by U. On the other hand, when the level is below the chemical potential, e–e interaction U may affect the modulator efficiency, because in this case the existence of e–e interaction can change the transport properties of the quantum dot. But the modulation efficiency still keep enough large and the spin transistor can effectively work.