Magnetic tunnel junctions comprising amorphous NiFeSiB and CoFeSiB free layers

Magnetic and magneto-transport behaviors of magnetic tunnel junctions (MTJs) incorporating newly developed amorphous NiFeSiB and CoFeSiB as free layers were investigated. Both experimental and theoretical approaches were carried out to understand the details of switching characteristics. The MTJs with traditional free layer materials such as NiFe and CoFe were also fabricated and compared. The studied amorphous ferromagnets appeared beneficial for reducing switching fields without loosing tunnelling magnetoresistive outputs. Further layer thickness, composition, and MTJ structure optimization are expected.     

Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing

Magnetic tunnel junction (MTJ) structures based on underlayer (CoNbZr)/bufferlayer (CoFe)/antiferromagnet (IrMn)/pinned layer (CoFe)/tunnel barrier (AlO_x)/free layer (CoFe)/capping (CoNbZr) have been prepared to investigate thermal degradation of magnetoresistive responses. Some junctions possess a nano-oxide layer (NOL) inside either in the underlayer or bufferlayer. The main purpose of the NOL inclusion was to control interdiffusion path of Mn from the antiferromagnet so that improved thermal stability could be achieved. The MTJs with NOLs were found to have reduced interfacial roughness, resulting in improved tunneling magnetoresistance (TMR) and reduced interlayer coupling field. We also confirmed that the NOL effectively suppressed the Mn interdiffusion toward the tunnel barrier by dragging Mn atoms toward NOL during annealing.     

Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes.     

Magnetic microstructure of candidates for epitaxial dual Heusler magnetic tunnel junctions

Heusler alloys are considered as interesting ferromagnetic electrode materials for magnetic tunnel junctions, because of their high spin polarization. We, therefore, investigated the micromagnetic properties in a prototypical thin film system comprising two different Heusler phases Co₂MnSi (CMS) and Co₂FeSi (CFS) separated by a MgO barrier. The magnetic microstructure was investigated by X-ray photoemission electron microscopy (XPEEM). We find a strong influence of the Heusler phase formation process on the magnetic domain patterns. SiO₂/V/CMS/MgO/CFS and SiO₂/V/CFS/MgO/CMS trilayer structures exhibit a strikingly different magnetic behavior, which is due to pinhole coupling through the MgO barrier and a strong thickness dependence of the magnetic ordering in Co₂MnSi.     

Spin-transfer switching in MgO magnetic tunnel junction nanostructures

Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magnetoresistance ratio of up to 160% and the average intrinsic switching current density (J_c0) down to 2 MA/cm², which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlO_x MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed.     

Giant intrinsic magnetic hardness

Crystallographically partly randomized materials with high magnetic anisotropy exhibit anisotropy and exchange fluctuations. Possibly the most dramatic consequence of these interaction fluctuations is the presence of giant intrinsic magnetic hardness observed, especially at cryogenic temperatures. This magnetic hardness (resistance to demagnetization) is anintrinsic solid state property, quite in contrast with hardness in technologically important materials based on the presence of fine particles or precipitate phases. It introduces rather a further variety in the phenomenology of interaction fluctuation materials such as spin glasses, representing the extreme case of high anisotropy and high moment concentrations. In this paper the phenomenon of strong intrinsic magnetic hardness is reviewed, and some new experimental data are presented for homogeneous pseudobinary regions of composition on the basis of such compounds as SmNi₅, SmCu₅, SmCo₅, TbFe₂ and others. Magnetic hardness in some of these cases reaches the highest values found so far for any class of materials. For instance, maximum values of coercive force of aboutH _c=230 kOe are observed for SmCo_5−xNi_x. Even higher values are extrapolated in other cases. Maximum values ofH _c are observed in materials with ordering temperatures of order 60–200 K. A strong temperature and a weaker time dependence ofH _c is observed and discussed on the basis of theories involving thermal activation of domain propagation. Comparisons are drawn with effects generally observed in magnetically hard materials, and the relationship of intrinsic magnetic hardness to technologically interesting materials is discussed. Tentative conclusions as to the details of the origins of giant intrinsic magnetic hardness are drawn and areas of future interest are indicated. This study was supported by a grant from the National Science Foundation.     

Magnetization reversal mechanism of magnetic tunnel junctions

Using the ion-beam-sputtering technique,we have fabricated Fe/Al2O3/Fe magnetic tunnelling junctions (MTJs).We have observed double-peaked shapes of curves,which have a level summit and a symmetrical feature,showing the magnetoresistance of the junction as a function of applied field.We have measured the tunnel conductance of MTJs which have insulating layers of different thicknesses.We have studied the dependence of the magnetoresistance of MTJs on tunnel conductance.The microstructures of hard-and soft-magnetic layers and interfaces of ferromagnets and insulators were probed.Analysing the influence of MJT microstructures,including those having clusters or/and granules in magnetic and non-magnetic films,a magnetization reversal mechanism(MRM) is proposed,which suggests that the MRM of tunnelling junctions may be explained by using a group-by-group reversal model of magnetic moments of the mesoscopical particles.We discuss the influence of MTJ microstructures,including those with clusters or/and granules in the ferromagnetic and non-magnetic films,on the MRM.     

Structural and magnetic phase transitions in mixed-valence cobalt oxides REBaCo4O7 (RE=Lu,Yb, Tm)

New mixed valence Co oxides REBaCo₄O₇ (RE=Lu, Yb, Tm) show structural first-order phase transitions from hexagonal (P6₃mc) to orthorhombic (Cmc2₁ or lower) system below 170, 180, and 230 K, respectively. The low-temperature phases order magnetically at 47, 75, and 105 K, respectively.     

Magnetic-roughness-induced magnetostatic interactions in magnetic tunnel junctions

Magnetostatic ferromagnetic coupling in magnetic tunnel junctions was selectively analyzed. We have shown that in samples involving polycrystalline magnetic films, beyond the orange-peel coupling, an important class of interaction is related to the dispersion fields associated to magnetic inhomogeneities. These magnetization fluctuations were described in terms of magnetic roughness arising from the local anisotropy fluctuations. Therefore, using roughness data extracted from atomic/ magnetic force microscopy analysis, the amplitude and the variation with distance of the magnetostatic interactions were selectively quantified. Received 7 December 2001     

Relaxing-precessional magnetization switching

A new way of magnetization switching employing both the spin-transfer torque and the torque by a magnetic field is proposed. The solution of the Landau–Lifshitz–Gilbert equation shows that the dynamics of the magnetization in the initial stage of the switching is similar to that in the precessional switching, while that in the final stage is rather similar to the relaxing switching. We call the present method the relaxing-precessional switching. It offers a faster and lower-power-consuming way of switching than the relaxing switching and a more controllable way than the precessional switching.     

Hysteresis of two interacting magnetic pairs with inequivalent perpendicular anisotropy

We consider a model for magnetic memory that consists of strongly coupled dipolar or antiferromagnetic (AF) pairs with inequivalent perpendicular anisotropy _K1$K_1$ and _K2$K_2$. For appropriate parameter values, determined in this work, they have two inequivalent storage states with zero net magnetic moment. Both analytical and numerical calculations are performed, in some cases yielding different results because of relaxation effects (i.e., a dependence on the damping parameter α$\alpha$). Hysteresis loops for a wide variety of parameter values are obtained, both for the AF case and the dipole case. An Appendix gives analytic results for slightly non-collinear spins in an applied field, which were used to test the numerical results.     

The influence of band Jahn-Teller effect and magnetic order on the magneto-resistance in manganite systems

A model calculation is presented in order to study the magneto-resistivity through the interplay between magnetic and structural transitions for the manganite systems. The model consists of an orbitally doubly degenerate conduction band and a periodic array of local moments of the t_2g electrons. The band electrons interact with the local t_2g electrons via the s-f hybridization. The phonons interact with the band electrons through static and dynamic band Jahn-Teller (J-T) interaction. The model Hamiltonian including the above terms is solved for the single particle Green's functions and the imaginary part of the self-energy gives the electron relaxation time. Thus the magneto-resistivity (MR) is calculated from the Drude formula. The MR effect is explained near the magnetic and structural transition temperatures.     

The influence of size on coercive field of ultra soft magnetic materials

We report here a size dependence of the coercive field in the millimeter–centimeter range length scale of ribbon like samples prepared from ultra soft amorphous and nanocrystalline alloys. A model is proposed where surface pinned domain walls are considered having an effective stiffness constant linearly increasing with the demagnetization factor.     

Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions

We conducted a detailed study of hard axis magnetic field (H_hard) dependence on current-induced magnetization switching (CIMS) in MgO-based magnetic tunnel junctions (MTJs) with various junction sizes and various uniaxial anisotropy fields. The decreases in critical current density (J_c) and the intrinsic critical current density (J_c0) estimated from the pulse duration dependence on J_c in CIMS are observed when applying H_hard for all MTJs. The decrease in energy barrier of CIMS is also observed except for the largest sample. These results indicate that the reduction of J_c is attributable to both the increase of spin-transfer efficiency and the decrease in energy barrier in the case of applying H_hard. The J_c0 decreases with increase in the mutual angle between the direction of magnetization and the easy axis (θ_f), which is consistent with the theoretical prediction proposed by Slonczewski. The degree of the reduction of J_c0 for the same value of H_hard decreases with decreasing size of MTJs. This behavior is considered to be related to not only decrease in θ_f due to the increase in anisotropy field in MTJs, but also to the increase in the variance of the initial angle of magnetization due to the thermally activated magnon excitation. The stable switching endurance related to CIMS was observed in a wide range of MTJ sizes when applying H_hard. Moreover, we proposed a new architecture and a new switching method considering write disturbance. These results would be useful for application to spin memory and other spin-electronic devices.     

Spin frozen in the Kondo-lattice compound: CeCuSi2

In this paper, we present the experimental results of X-ray powder diffraction, electrical resistivity, magnetic susceptibility, and specific-heat measurements as well as Ce-L_III-edge X-ray absorption spectrum of the Ce-based intermetallic compound CeCuSi₂. The results revealed that CeCuSi₂ is a Kondo-lattice compound with no superconducting or magnetic-phase transition above 0.4 K. In addition, we found spin-glass behavior in the DC susceptibility measurements. The AC susceptibility measurements and the magnetic entropy calculation also confirm the presence of the spin-glass phase. The possible formation mechanism for the spin-frozen state is also discussed in this paper.     

Thermodynamics of the spin-S antiferromagnetic Heisenberg chain

The numerical solution of the Bethe ansatz equations of an integrableSU (2)-invariant generalization of the spin-S antiferromagnetic Heisenberg chain in zero magnetic field is presented. The thermodynamics is obtained numerically. The temperature dependence of the entropy, specific heat and susceptibility is presented forS5/2. The results are compared to those of then-channel Kondo problem with a spin-S impurity withn=2S.     

Magnetization processes of iron whiskers in small magnetic fields

The magnetization behaviour of iron whiskers in de magnetic fields has been investigated using the enhanced longitudinal magneto-optic Kerr effect [6]. The experimental results were compared with the phenomenological membrane model [1] and also with magneto static calculations.     

Transmission X-ray microscopy using X-ray magnetic circular dichroism

X-ray magnetic circular dichroism (X-MCD) was used as a large, element-specific and quantitative magnetic contrast mechanism in the soft X-ray microscopes at BESSY I (Berlin) and the ALS (Berkeley). The present state and potential of magnetic transmission X-ray microscopy (MTXM) is outlined. The possibility to record images in varying magnetic fields and the high spatial resolution down to 25 nm were used to image out-of-plane magnetized (4 ?Fe / 4 ?Gd)×75 systems. Magnetic domains could be studied in arrays of circular and square dots with lateral dimensions down to 180 nm. Hysteresis loops of individual dots were deduced using the direct proportionality of the X-MCD contrast to the sample magnetization. Images of a 3 nmCr / 50 nmFe / 6 nmCr film demonstrate for the first time that MTXM is also able to observe in-plane magnetized domains. In the future the possible applications of MTXM will be extended with regard to the strength of the external field, the available energy range and the sample conditions by building a dedicated transmission X-ray microscope for magnetic imaging at BESSY II. Received: 22 May 2001 / Accepted: 4 July 2001 / Published online: 5 October 2001