Preparation,characterization and magneto-optical investigations of electrodeposited Co/Au films

Au/Co(4–8 ML)/Au single magnetic layers and Au(8 ML)/Co(4 ML)/Au(8 ML)/Co(8 ML)/Au bilayer were sequentially grown by electrodeposition on an Au(1 1 1) buffer layer electrodeposited on Si(1 1 1). The technique used in this work provides full control on the structure and the chemical composition of the different layers (no alloying) as well as on the chemistry at interfaces. scanning tunneling microscopy (STM) and atomic force microscopy (AFM) imaging and X-ray diffraction measurements show that atomically flat continuous Co(0 0 0 1) layers (4–8 ML) can be grown in epitaxy with the Au(1 1 1) substrate and that the 2 nm-thick spacer is also a continuous Au(1 1 1) layer. The Co ultrathin layers (4 and 8 ML) exhibit perpendicular magnetic anisotropy. The lateral magnetic homogeneity and magnetization reversal process have been investigated by scanning magneto-optical Kerr effect (MOKE) magnetometry and global Kerr microscopy. The correlation between magnetization switching behaviour in each layer of the Co-bilayer stack has been evidenced from in-depth sensitive MOKE measurements and microscopy. The strong coupling observed between the two Co layers is attributed to magnetostatic interaction at domain wall boundaries.     

Phase Separation in GaMnAs Layers Grown by Laser Pulsed Deposition

GaMnAs layers grown by pulsed laser deposition were studied by magneto-optical transversal Kerr effect spectroscopy, spectral ellipsometry, resistivity and the Hall effect measurements, and magnetometry. The growth regimes for magnetically inhomogeneous layers containing Mn-enriched ferromagnetic regions with different composition and sizes were established. The layers grown at a temperature of 300°C exhibit a ferromagnetic behavior at temperatures below 80 K, which is conditioned by the presence of local ferromagnetic (Ga,Mn)As regions in the paramagnetic matrix. The nature of peculiarities in the TKE spectrum of these layers is discussed.     

In-plane magnetic anisotropies in Ni/FeMn and Ni90Fe10/FeMn exchange biased bilayers

The in-plane magnetic anisotropy in Ni/FeMn and Ni₉₀Fe₁₀/FeMn exchange-biased bilayers prepared by co-evaporation under molecular beam epitaxy conditions is investigated employing longitudinal magneto-optical Kerr effect (MOKE) and ferromagnetic resonance (FMR). The exchange anisotropy was induced by a magnetic field cooling immediately after the deposition of the bilayers. Besides the induced term, the presence of an additional uniaxial anisotropy in the FM layers was detected both by MOKE and FMR, and the characteristic directions of these two anisotropy terms are not coincident. The interplay between the anisotropy contributions is discussed considering micromagnetic simulations and the in-plane resonance condition for different magnetic field orientation. X-ray diffraction, X-ray photoelectron spectroscopy, and Mössbauer spectroscopy were used to complement the characterization of the samples.     

The study of exchange coupling in NiFe/Cu/IrMn trilayer structures by MOKE and FMR measurements

The exchange coupling strength of NiFe/Cu/IrMn trilayer films was examined with both a new magneto optical Kerr effect (MOKE) method developed for the exchange coupling field determination and ferromagnetic resonance (FMR) measurements. We found that the value for exchange coupling field obtained by the MOKE technique coincided with FMR result with high accuracy. Other peculiarities of FMR measurements due to interlayer exchange coupling such as angular dependence of resonance field on Cu spacer thickness are also shown in the article.     

Nanosize layers of silicon and manganese ferromagnetic alloys deposited from laser plasma

The results of studying random silicon-manganese alloys with Mn concentration increased up to 50 at % and discrete alloys (multilayer structures with silicon and manganese layers 5–20 and 1–5 nm thick, respectively) deposited from laser plasma are presented. Structure and composition were checked by atomic force microscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, and Auger electron spectroscopy. In Si-Mn discrete alloys, the high-level hole conduction with the conventional linear Hall effect was observed. For silicon-manganese random alloy layers with Mn concentration increased up to 50 at %, the hysteresis abnormal Hall effect, magnetooptic Kerr effect and anisotropic dependence between the microwave absorption and magnetic field typical for plane ferromagnets were recorded up to 293 K. Ferromagnetism of homogeneously doped silicon layers is due not to the separation of the second phase with the excess of Mn but with the unusual properties of silicon and manganese alloys prepared in heavily nonequilibrium conditions. Structural measurements of discrete alloys confirmed the presence of the periodic depth distribution of silicon and manganese. The first data about the character of atom mixing near the layer boundaries during the laser synthesis were obtained. Results obtained by applied mathematical and statistical analysis of the sequences of separate photoelectron lines observed during the Si-Mn system ion profiling in depth were given.     

Indication of a ferromagnetic submonolayer of ruthenium on palladium

Thin Pd films with submonolayers of Ru are investigated by means of the anomalous Hall effect and weak localization. The anomalous Hall resistance yields the magnetization of the film as a function of the applied magnetic field B. The susceptibility is only weakly temperature dependent. This suggests that the Pd/Ru is weakly ferromagnetic showing large spin wave excitations. The maximum magnetization is found for a coverage of about 0.1 atomic layers of Ru. For larger coverages the Ru moment decreases strongly. This is confirmed by the behavior of the electron dephasing rate determined from magnetoresistance measurements. Received: 9 July 1997 / Accepted: 6 November 1997     

CW CO2-laser annealing of arsenic implanted silicon

CW CO₂-laser annealing of arsenic implanted silicon was investigated in comparison with thermal annealing. Ion channeling, ellipsometry, and Hall effect measurements were performed to characterize the annealed layers and a correlation among the different methods was made. The laser annealing was done with power densities of 100 to 640 W cm⁻² for 1 to 20 s. It was found that the lattice disorder produced during implantation can be completely annealed out by laser annealing with a power density of 500 W cm⁻² and the arsenic atoms are brought on lattice sites up to 96±2%. The maximum sheet carrier concentration of 6×10¹⁵ cm⁻² was obtained for 1×10¹⁶ cm⁻² implantation after laser annealing, which was up to 33% higher than that after thermal annealing at 600 to 900°C for 30 min.     

Two-jump magnetic switching in ultrathin Co(0 0 1) films probed by giant magnetoresistance measurements

Ultrathin epitaxial FCC-Co films, which form part of a spin-valve structure, were found to undergo one- or two-jump magnetic switching, in GMR and MOKE measurements depending upon the field orientation. The transitions are mediated by the propagation of 180° or 90° domain walls. The Co two-jump spin switching in the spin-valve structure has contributed to the formation of three stable GMR states: parallel, antiparallel and a new intermediate state.     

Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 500^o C. The increment of electron concentration from room temperature to 500^o C is found to vary largely for different samples. The dispersion of temperature dependence of electron concentration is found to be directly proportional to the density of dislocations in GaN layers calculated by fitting the FWHM of the rocking curves in x-ray diffraction measurements （XRD）. The buildup levels in persistent photoconductivity （PPC） are also shown to be directly proportionM to the density of dislocations. The correlation of XRD, Hall and PPC results indicate that the high temperature dependence of electron density in unintentional doped GaN is directly dislocation related.     

Transport properties of silicon doped n-indium selenide

Hall effect and resistivity measurements in silicon doped indium selenide (InSe), from 7K to 500K, are reported. Results are interpreted through a model, previously proposed for tin doped InSe, that takes into account the contribution of both three- and two-dimensional electrons to charge transport along the layers in InSe.     

Magnetization reversal of micropattern Fe bar array: Combination of vector and Bragg magneto-optical Kerr effect measurements

We report on a magneto-optical Kerr effect (MOKE) investigation of alternating wide and narrow Fe bars, forming a two-dimensional periodic array. The magnetization reversal was studied by regular longitudinal Vector-MOKE in specular geometry as well as in Bragg-MOKE geometry, using the diffraction spots from the grating for hysteresis measurements. With Vector-MOKE a two-step switching process for the wide and narrow Fe bars is observed, indicative for a narrow switching field distribution in this array. In addition, hysteresis loops were determined as a function of the diffraction order for the hard and easy axis direction. The loops at different orders of diffraction can qualitatively and quantitatively be described by Fourier transformations of micromagnetic simulations.     

Formation of half-metallic MnAs and MnP layers

Half-metallic MnAs and MnP layers were grown on GaAs substrates by the laser sputtering of a metal Mn target in a hydrogen and arsine (phosphine) flow. The effect of the arsine concentration in the gascarrier and the substrate temperature (T _g = 300—450°C) on the crystal structure and electrical and magnetic properties were determined. It was shown that MnP samples grown at T _g ≥ 400°C exhibit ferromagnetic properties up to 300 K, according to Hall effect measurements.     

Magnetotransport of lanthanum doped RuSr<Subscript>2</Subscript>GdCu<Subscript>2</Subscript>O<Subscript>8</Subscript> – the role of gadolinium

Strongly underdoped RuSr_1.9La_0.1GdCu₂O₈ has been comprehensively studied by dc magnetization, microwave measurements, magnetoresistivity and Hall resistivity in fields up to 9 T and temperatures down to 1.75 K. Electron doping by La reduces the hole concentration in the CuO₂ planes and completely suppresses superconductivity. Microwave absorption, dc resistivity and ordinary Hall effect data indicate that the carrier concentration is reduced and a semiconductor-like temperature dependence is observed. Two magnetic ordering transitions are observed. The ruthenium sublattice orders antiferromagnetically at 155 K in low applied magnetic fields, and the gadolinium sublattice orders antiferromagnetically at 2.8 K. The magnetoresistivity in this compound exhibits a complicated temperature dependence due to the occurence of the two magnetic orders and spin fluctuations. It is shown that the ruthenium magnetism influences the conductivity in the RuO₂ layers while the gadolinium magnetism influences the conductivity in the CuO₂ layers. The magnetoresistivity is isotropic above 4 K, but it becomes anisotropic close to the gadolinium antiferromagnetic order temperature.     

Magnetic and magneto-optical properties of CoFeCrSiB amorphous ribbons

In this paper we investigate the surface magnetic properties of as-quenched (AQ) CoFeCrBSi ribbons prepared by planar flow casting method with using magneto-optic Kerr effect (MOKE). Measured hysteresis loops in longitudinal and transversal configurations enable us to obtain the information of ribbons surface magnetic properties. Moreover, we suggest new magneto-optic method, which is based on measurements of magneto-optical effects depending on DC current flowing through the ribbon. Experimental data of AQ ribbons are then compared with the model, which describes the influence of incidence angle on magneto-optical angles.     

Transport features in laser-plasma-deposited InMnAs layers in strong magnetic fields

We have studied the magnetotransport properties of p-InMnAs layers in strong (up to 30 T) pulsed magnetic fields. The p-InMnAs layers were obtained by laser plasma deposition with subsequent annealing by radiation of a pulsed ruby laser. Under anomalous Hall effect conditions in a strong magnetic field (above 20 T), the Hall resistance in the paramagnetic region of temperatures is greater than that in the ferromagnetic region (below 40 K). It has also been established that, at helium temperatures, the negative magnetoresistance exhibits saturation in a field of about 10 T, whereas the anomalous Hall effect is saturated at about 2 T. At T ≈ 4 K, the resistance in a field of 10 T exhibits a more than tenfold decrease. The results are explained by a mesoscopically inhomogeneous distribution of the acceptor (Mn) impurity, a local ferromagnetic transition, and a percolation character of the conductivity of p-InMnAs films in a state close to the insulator-metal phase transition. The characteristic scale of magnetoelectric inhomogeneity in the system is evaluated based on an analysis of mesoscopic fluctuations of the nondiagonal component of the magnetoresistance tensor.     

A capacitive method for hall effect measurements

A new, simple and reliable method for Hall effect measurements is introduced. The method employs a capacitive probe technique and requires neither special shaping of samples nor probing Hall contacts. With this method, Hall effect measurements onp-Ge have been first extended to high electric fields up to 3kV/cm at 4.2 K. The wide applicability of this method is discussed.     

New experimental results for electron transport in weak accumulation layers of ZnO crystals

Previous Hall measurements on (0001) and (0001&#x0304;) faces of ZnO have shown a Hall mobility oscillating as a function of Hall surface electron density in the range between N_SH=10⁶ and 10¹¹ cm^?2. Here we report on new results obtained by a field effect arrangement for free surfaces in UHV. With donors from H exposure or by illumination weak accumulation layers (n_sh <10¹¹ cm^?2) are established. The field effect shows oscillations in surface conductivity as a function of gate voltage. Also the combination of a field effect with a Hall effect measurement reveals discrete values of Hall surface electron density n_sh. Various pretreatments do not change the periodicity of these oscillations. Necessary preconditions are a temperature below 130 K, a Hall surface electron density below 3 × 10¹² cm^?2 and a source-drain field of a few V/cm. A model regarding impurity levels in the space charge layer relates the results of the field effect measurements to the results of the Hall effect measurements.     

Stable p-ZnO thin films by oxygen control using reverse spray dynamics

Semiconducting ZnO thin films were deposited on glass substrates by a modified CVD method using reverse spray of the precursor solutions. The films were characterized by X-ray diffraction (XRD) and Hall effect measurements at room temperature. The results of XRD analysis revealed polycrystalline nature of the grown films with different crystallographic orientations. The type of conductivity and the carrier concentration as determined from Hall effect measurements were dependent on the deposition temperature and annealing conditions. Oxygen control at 220 °C produced p-ZnO film with high hole mobility (193 cm²/V s). The electrical conductivity was correlated to the stoichiometry of the grown films.     

Hall effect measurements using low ac magnetic fields and lock-in technique on field effect transistors with molybdenum disulfide channels

Hall effect measurements conventionally rely on the use of dc magnetic fields. For electronic devices made of ultrathin semiconducting materials, such as molybdenum disulfide (MoS₂), the dc Hall effect measurements have practical difficulties. Here, we report the results of the Hall effect measurements using ac magnetic fields and a lock-in detection of the Hall voltage for field effect transistors with ultrathin MoS₂ channels. The ac Hall effect measurements have some advantages over the dc measurements. The carrier concentration and the Hall mobility were estimated as a function of gate voltage from the results of the ac Hall effect measurements. They used a magnetic field strength that was lower by two orders of magnitude than those used in prior studies on MoS₂ devices, which relied on dc magnetic fields.     

Optimization of spin-valve parameters for magnetic bead trapping and manipulation

Magneto-optic Kerr effect (MOKE) and magnetoresistance (MR) measurements were used to measure the switching characteristics of spin-valve (SV) arrays currently being developed to trap and release superparamagnetic beads within a fluid medium. The effect of SV size on switching observed by MOKE showed that a 1 μm×8 μm SV element was found to have optimal switching characteristics. MR measurements on a single 1 μm×8 μm SV switched with either an external applied magnetic field or a local magnetic field generated by an integrated write wire (current density ranging from 10⁶ to 10⁷ A/cm²) confirmed the MOKE findings. The 1 μm×8 μm SV low field switching was observed to be +8 and −2 mT with two stable states at zero field; the high field switching was observed to be −18 mT. The low switching fields and the large magnetic moment of the SV trap along with our observation of minimal magnetostatic effects for dense arrays are necessary design characteristics for high-force, “switchable-magnet,” microfluidic bead trap applications.