Magnetic domain wall pinning and coercivity in FePt/MgO and FePt/Pt thin films

FePt thin layers have been epitaxied either on Pt(0 0 1) or on MgO(0 0 1) substrates, and magnetically characterized using extraordinary Hall effect magnetometry and magnetic force microscopy. The coercivity originates in both cases from the pinning of domain walls on structural defects. Whereas the coercivity increases with the FePt layer thickness in FePt/Pt samples, it decreases in FePt/MgO samples. This discrepancy is explained on the basis of structural observations, and of atomistic simulations of magnetic domain wall pinning.     

The abnormal direct-current resistivity of Ni–Mn–Ni triple-layered magnetic thin-films and their magnetic wall observations

We have observed an abnormal electron transport characteristic from the Ni–Mn–Ni triple-layered magnetic thin-films. Due to the intercalated Mn ultra-thin interlayer, the magnetic domain structure and the electron transport characteristic differ a lot from their original magnetic (Fe, Co, and Ni) films. As inspected by a magnetic force microscopy (MFM), we observed the variation of the domain configuration with Mn interlayer thicknesses (for 1, 5, and 10 nm). Moreover, we also examined and found that the direct current (DC) resistivity have no significant change as the current conducts from the current-in-wall (CIW) to the current- perpendicular-to-wall (CPW), which are opposite to the results of single layered films.     

Anomalous magnetization processes and non-symmetrical domain wall displacements in L10 FePt particulate films

Anomalous magnetization processes and non-symmetrical domain wall displacements in the minor loop of L1₀ FePt particulate films were investigated by magnetization measurements and in situ magnetic force microscopy. Magnetization (M) decreases dramatically on increasing the magnetic field to ∼3 kOe after which M becomes small and constant in the range of 5–20 kOe as observed in the successive measurement of minor loops. The domain wall displacement is non-symmetrical with respect to the field direction. The anomalous magnetization behavior was attributed to the non-symmetrical domain wall displacement and large magnetic field required for domain wall nucleation. Energy calculations from modeling suggest that non-symmetrical domain wall displacement is caused by the existence of metastable domains in which the domain edges are stuck to the particle boundaries.     

Simultaneous observation of atomic step and domain wall structure of ultrathin Co films by magnetic force microscopy in ultrahigh vacuum

We have applied magnetic force microscopy in ultrahigh vacuum to study the correlation between the atomic step and magnetic domain wall structure of ultrathin Co films prepared in situ on Au(111) substrates. For the first time we were able to achieve high-resolution images showing simultaneously a clear domain wall contrast and the underlying atomic step structure. Although for in-plane magnetized Co films the domain walls were found to run preferentially in a direction perpendicular to the steps, no such correlation could be observed for out-of-plane magnetized Co films. Received: 3 June 1999 / Accepted: 4 June 1999 / Published online: 29 July 1999     

Similarity rules of magnetic minor hysteresis loops in Fe and Ni metals

We have studied similarity rules of quasistatic minor hysteresis loops for Fe and Ni single crystals in the wide temperature range from 10 to 600 K. Two similarity rules of M_R*/M_a*∼3/4 and W_R*/W_F*∼1/6, were found in a medium field range where irreversible movement of Bloch walls plays a crucial role for magnetization; M_a*, M_R*, W_F*, and W_R* are magnetization, remanence, hysteresis loss, and remanence work of a minor hysteresis loop. The similarity rules hold true, being almost independent of kinds of ferromagnets, applied stress, and temperature. The origin was discussed from the viewpoint of pinning effects due to dislocations as well as eddy current effects which become predominant at low temperatures for samples with low dislocation density.     

Magnetic viscosity effects in epitaxial L10 FePt thin films and exchange spring Fe–FePt bilayers

We have studied the thermal stability of L1₀ FePt thin films and Fe–FePt exchange-spring (ES) bilayers grown on (1 0 0) MgO by RF sputtering. The viscosity curves showed both for FePt films and bilayers a clear logarithmic decay of magnetization. Moreover, it was possible to evaluate the viscosity coefficient S for different applied reverse fields and the activation volumes at the coercivity. The latter values were then related to structural, magnetic and morphological measurements performed on the samples.     

Magnetic force microscopy studies of domain walls in nickel and cobalt films

A magnetic force microscopy is used to examine the domain walls in nickel and cobalt films deposited by argon ion sputtering. Thin nickel films deposited at high substrate temperatures exhibit coexistent Bloch and Neel walls. Films grown at room temperature display alternative Bloch lines with cap switches. These films agglomerate to form grains after annealed at high temperatures. The film composed of larger grains behaves better nucleation implying magnetic domains of closure, while the film composed of smaller grains exhibits more defects implying alternative Bloch lines. We have also observed domain displacements and cap switches, which occur due to precipitation of particles in small grain size films. Stripe domains are observed for film thicknesses larger than 100 nm. They become zigzag cells when an external field of 1.5 T is applied perpendicular to the surface of the films. This experiment indicates that the domain sizes in thin films and the strip widths for thick films both depend on the square-root of the film thickness, which varies from 5 to 45 nm and from 100 to 450 nm, respectively.     

Evidence of domain wall scattering in thin films of granular CoFe-AgCu

Thin films of the giant magnetoresistive granular CoFe-AgCu system prepared by rf sputtering displayed a great variety of domain-like microstructures with a net out-of-plane component of the magnetization for ferromagnetic volume concentrations above about 0.25. Therefore, magnetic percolation takes place at ferromagnetic concentrations much lower than the physical percolation threshold. The out-of-plane structure of the as-deposited samples in magnetic virgin state consisted of a distribution of both quasi-circular domains and short stripes depending on the ferromagnetic content. Furthermore, these samples present high metastability and a variety of remanent in-plane and out-of-plane microstructures can be achieved as a function of the magnetic history. Besides, the evolution of the magnetic microstructure yields strong training effects on magnetotransport properties, due to the extra contribution of the electron scattering at the domain walls. All in all, the observed behavior is the result of a subtle correlation between perpendicular anisotropy produced by residual stresses, exchange interparticle interactions due to CoFe alloyed in the matrix, and dipolar interactions. Thus, as high structural evolution occurs through annealing, the features of randomly distributed ferromagnetic particles are recovered and, the out-of-plane domain structures and the training effects disappear. Received 30 September 1999     

Growth temperature dependence of the hysteretic behavior of Ni0.5Zn0.5Fe2O4 thin films

Herein, a discussion of the effect of deposition temperature on the magnetic behavior of Ni_0.5Zn_0.5Fe₂O₄ thin films. The thin films were grown by r.f. sputtering technique on (1 0 0) MgO single-crystal substrates at deposition temperatures ranging between 400 and 800 °C. The grain boundary microstructure was analyzed via atomic force microscopy (AFM). AFM images show that grain size (φ∼70-112 nm) increases with increasing deposition temperature, according to a diffusion growth model. From magneto-optical Kerr effect (MOKE) measurements at room temperature, coercive fields, H_c, between 37and 131 Oe were measured. The coercive field, H_c, as a function of grain size, reaches a maximum value of 131 Oe for φ ∼93 nm, while the relative saturation magnetization exhibits a minimum value at this grain size. The behaviors observed were interpreted as the existence of a critical size for the transition from single- to multi-domain regime. The saturation magnetization (21 emu/g<M_s<60 emu/g) was employed to quantify the critical magnetic intergranular correlation length (L_c≈166 nm), where a single-grain to coupled-grain behavior transition occurs. Experimental hysteresis loops were fitted by the Jiles-Atherton model (JAM). The value of the k-parameter of the JAM fitted by means of this model (k/μ_o∼50 A m²) was correlated to the domain size from the behavior of k, we observed a maximum in the density of defects for the sample with φ∼93 nm.     

Investigation of ripple structures of thin polycrystalline Co films by magnetic force microscopy

Received: 14 August 1997/Accepted: 14 August 1997     

Thickness-dependent magnetic domain structures of ultrathin Co/Au(111) films studied by means of magnetic force microscopy in ultrahigh vacuum

Received: 10 December 1997/Accepted: 11 December 1997     

Exchange bias and negative magnetoresistance in [Co/Bi/Co]/IrMn thin films]

The artificial control of grain-boundary resistance and its contribution to magnetic and magneto-transport properties in [Co(3 nm)/Bi(2.5 nm)/Co(3 nm)]Ir₂₀Mn₈₀(12 nm) thin films that exhibit exchange bias is studied. Transverse magnetoresistance (MR) loops exhibit a negative MR in thin films grown by magnetron sputtering on Si/SiN_x(100 nm) substrates. This negative MR effect is of the giant-MR (GMR) type, although its magnitude is less than 1%. A considerable exchange bias (EB) effect is observed only at lower temperatures, where both, GMR and isothermal magnetization loops exhibit a shift of −600 Oe at 5 K.     

Magnetic and electrical properties of amorphous Ge1−xCrx thin films grown by low temperature vapor deposition

Amorphous Ge_1−xCr_x thin films are deposited on (1 0 0)Si by using a thermal evaporator. Amorphous phase is obtained when Cr concentration is lower than 30.7 at%. The electrical resistivities are 1.89×10⁻³–0.96×10² Ω cm at 300 K, and decrease with Cr concentration. The Ge_1−xCr_x thin films are p-type. The hole concentrations are 5×10¹⁶–7×10²¹ cm⁻³ at 300 K, and increase with Cr concentration. Magnetizations are 7.60–1.57 emu/cm³ at 5 K in the applied field of 2 T. The magnetizations decrease with Cr concentration and temperature. Magnetization characteristics show that the Ge_1−xCr_x thin films are paramagnetic.     

Magnetic force microscopy study of magnetic stray-field effects due to mechanical surface modifications of patterned Permalloy thin films

The domain structure of magnetic thin films is strongly influenced by the presence of surface defects. We have used a scanning tunneling microscope for local surface modifications of thin Permalloy films by mechanical interaction between tip and sample. The changes of the magnetic stray-field distribution due to local topographic modifications have been probed by magnetic force microscopy. The relationship between the surface morphology and the micromagnetic structure is studied for different types of surface modifications.     

Preparation and magnetoresistance of thin CrO2 films

Highly textured chromium dioxide (CrO₂) films have been deposited on Al₂O₃ single-crystal substrates by atmospheric pressure chemical vapor deposition method (CVD). X-ray diffraction patterns show that the CrO₂ films are (1 0 0)-oriented on Al₂O₃ (0 0 1) substrates, and are (1 0 1)-oriented on Al₂O₃ (0 1 2) substrates. Scanning electron microscopy images indicate that the (1 0 0)-oriented CrO₂ films grown on Al₂O₃ (0 0 1) substrates have smoother surface and better qualities than that grown on Al₂O₃ (0 1 2) substrate. At room temperature, the magnetoresistance of the (1 0 0)- and (1 0 1)-oriented CrO₂ films are nearly same, and both show a linear dependence on applied magnetic field. While at 80 K, the (1 0 1)-oriented CrO₂ films show a much larger magnetoresistance compared with the (1 0 0)-oriented CrO₂ films. The reasons are briefly discussed.     

Magneto-optical Faraday and Kerr effect of orthoferrite thin films at high temperatures

Orthoferrites present, as bulk materials, reorientation transitions of their magnetic moment alignment at temperatures depending on the rare-earth (RE) ion. In particular, orthoferrites (REFeO₃) with RE = Sm, Dy, present this transition at T _SRT = 443 K and 36 K, respectively. The spectra of the complex Kerr and Faraday angle have been measured on orthoferrite thin films (RE = Sm, Dy, Y), which were prepared by pulsed laser deposition on amorphous quartz substrates. The obtained spectra exhibit contributions of both surfaces and interfaces. Propagation effects of the polarized light in the magneto-optical medium which is interpreted in terms of a simplified theoretical formalism, is also observed. For selected photon energies, temperature dependent Faraday rotation measurements, , on orthoferrite thin films (RE = Sm, Dy, Y) have been performed. A quite different thermal variation compared to the bulk magnetization has been observed. Curie temperatures are found to be close to the bulk values or slightly larger by 10 K to 20 K as in the case of DyFeO₃ and YFeO₃. For RE = Sm and Dy, increases with increasing temperature contrary to the saturation magnetization, passes through a maximum at about 460 K and vanishes with a T _C of 647±18 K, 695 K for RE = Sm and Dy respectively. Received 28 July 2000     

Influence of magnetic (Fe) and non-magnetic (Ga) ion doping at Mn-site on the transport and magnetic properties of La0.7Ca0.3MnO3

The modifications in electrical and magnetic properties of polycrystalline bulk La_0.7Ca_0.3Mn_1−xT_xO₃ (T=Fe, Ga) samples at relatively higher doping concentration (x=0.08-0.12) are investigated. All the synthesized, single phase samples were subjected to resistivity measurements in the temperature range 50-300 K. No insulator-metal transition (T_P) was observed for Fe doped samples with x=0.12. For all the other samples the transition temperature decreased with increase in doping concentration. The small polaron hoping energy was found to increase, rather slowly, with increase in doping concentration. The effect on magnetic properties is also prominently observed with respect to doping element and doping concentration. Interestingly, with the increase in doping concentration, the Curie temperature (T_C) and T_P separate out significantly indicating decoupling of electric and magnetic properties. Changes in these properties have been analyzed on the basis of magnetic disorder introduced in the system due to the magnetic and nonmagnetic nature of these ions rather than strong lattice effects which is insignificant due to similar ionic radii of Fe⁺³ and Ga⁺³ when compared to that of Mn⁺³.     

Effects of Mn substitution of Co and Fe in spinel CoFe2O4 thin films

Effects of Mn substitution for Co and Fe on the structural and magnetic properties of inverse-spinel CoFe₂O₄ have been investigated. Mn_xCo_1−xFe₂O₄ and Mn_yCoFe_2−yO₄ thin films were prepared by a sol–gel method. The observed increase of the lattice constant of Mn_xCo_1−xFe₂O₄ indicates that Mn²⁺ ions substitute the octahedral Co²⁺ sites. Conversion electron Mössbauer spectroscopy data indicate that a fraction of octahedral Co²⁺ ions exchange sites with tetrahedral Fe³⁺ ions through Mn doping. Vibrating-sample magnetometry data exhibit a large increase of saturation magnetization for both Mn_xCo_1−xFe₂O₄ and Mn_yCoFe_2−yO₄ films compared to that of the CoFe₂O₄ film. Such enhancement of magnetization can be explained in terms of a breaking of ferrimagnetic order induced by the Co²⁺ migration.     

Magnetic and structural study of Cu-doped TiO2 thin films

Transparent pure and Cu-doped (2.5, 5 and 10 at.%) anatase TiO₂ thin films were grown by pulsed laser deposition technique on LaAlO₃ substrates. The samples were structurally characterized by X-ray absorption spectroscopy and X-ray diffraction. The magnetic properties were measured using a SQUID. All films have a FM-like behaviour. In the case of the Cu-doped samples, the magnetic cycles are almost independent of the Cu concentration. Cu atoms are forming CuO and/or substituting Ti in TiO₂. The thermal treatment in air promotes the CuO segregation. Since CuO is antiferromagnetic, the magnetic signals present in the films could be assigned to Cu substitutionally replacing cations in TiO₂.