Spin-flip and domain wall magnetoresistance in quantum magnetic nanocontacts

The theory of nanosize point contacts made of ferromagnetic metals is developed. A general quantum scattering theory is applied to calculate magnetoresistance of a nanocontact with a domain wall located in the constriction. The exact solution of the electron motion in a potential of the linear domain wall is used as a zero-order approximation. Spin-flip and spin-conserving quantized conductances of the nanocontact are calculated by the perturbation theory by the difference between the model and the Cabrera-Falicov potentials of the domain wall. It is explicitly shown that spin-flip conductance imposes natural limitation on magnetoresistance of the point contact, which otherwise diverges in the regime of complete spin-rectified conductance through the contact.     

Disturbance of spin equilibrium by current through the interface of noncollinear ferromagnets

Boundary conditions are derived that determine the penetration of spin current through an interface of two noncollinear ferromagnets with an arbitrary angle between their magnetization vectors. We start from the well-known transformation properties of an electron spin wave functions under the rotation of a quantization axis. It allows directly find the connection between partial electric current densities for different spin subbands of the ferromagnets. No spin scattering is assumed in the near interface region, so that spin conservation takes place when electron intersects the boundary. The continuity conditions are found for partial chemical potential differences in the situation. Spatial distribution of nonequilibrium electron magnetizations is calculated under the spin current flowing through a contact of two semi-infinite ferromagnets. The distribution describes the spin accumulation effect by current and corresponding shift of the potential drop at the interface. These effects appear strongly dependent on the relation between spin contact resistances at the interface.     

Magnetic vortex driven by non-uniform injection of spin-polarized current in nano-scale spin valves

We demonstrate that a current pulse of a non-uniform spin-polarized current density in a nanomagnet can drive, apart from magnetization reversal a static magnetic vortex. This vortex configuration can be achieved in low shape anisotropy spin valves of elliptical cross-sectional area. These non-uniform configurations exist also in presence of either ion mill damages below the nano-aperture or thermal effects at low temperature. We performed a numerical experiment of spin-torque driven ferromagnetic resonance in a magnetic vortex configuration, our results predict a frequency response with a few maxima and minima related to small oscillation of the vortex state around its equilibrium configuration.     

Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions

We conducted a detailed study of hard axis magnetic field (H_hard) dependence on current-induced magnetization switching (CIMS) in MgO-based magnetic tunnel junctions (MTJs) with various junction sizes and various uniaxial anisotropy fields. The decreases in critical current density (J_c) and the intrinsic critical current density (J_c0) estimated from the pulse duration dependence on J_c in CIMS are observed when applying H_hard for all MTJs. The decrease in energy barrier of CIMS is also observed except for the largest sample. These results indicate that the reduction of J_c is attributable to both the increase of spin-transfer efficiency and the decrease in energy barrier in the case of applying H_hard. The J_c0 decreases with increase in the mutual angle between the direction of magnetization and the easy axis (θ_f), which is consistent with the theoretical prediction proposed by Slonczewski. The degree of the reduction of J_c0 for the same value of H_hard decreases with decreasing size of MTJs. This behavior is considered to be related to not only decrease in θ_f due to the increase in anisotropy field in MTJs, but also to the increase in the variance of the initial angle of magnetization due to the thermally activated magnon excitation. The stable switching endurance related to CIMS was observed in a wide range of MTJ sizes when applying H_hard. Moreover, we proposed a new architecture and a new switching method considering write disturbance. These results would be useful for application to spin memory and other spin-electronic devices.     

Current-induced spin polarization and the spin Hall effect: A quasiclassical approach

The quasiclassical Green function formalism is used to describe charge and spin dynamics in the presence of spin-orbit coupling. We review the results obtained for the spin Hall effect on restricted geometries. The role of boundaries is discussed in the framework of spin diffusion equations.     

Equilibrium spin current induced by spin-orbital interaction in a quantum dot system

We report a theoretical study of the equilibrium spin current flowing in a quantum dot system. Two electrodes are the two-dimensional electron gas with Rashba or Dresselhaus spin-orbital interaction. By using the Keldysh Green's function technique, we demonstrated that a nonzero spin current can flow in the system without bias. At the weak coupling between electrodes and the quantum dot, the spin current is approximately proportional to the cross product of two average pseudo-magnetizations in two electrodes, which agrees with the result of the linear response theory; whereas at the opposite case, the strong coupling between the quantum dot and electrodes can lead to a non-sinusoidal behavior of the equilibrium spin current. These behaviors of the equilibrium spin current are similar to the Josephson current.     

Photocurrent spin diode: Electrically controlled sign reversal of current polarization

We report a study of spin-dependent transport through a quantum dot irradiated by continuous circularly polarized light resonant to the electron-heavy hole transition. We use the nonequilibrium Green's function to calculate the spin accumulation, spin-resolved currents, and current polarization in the presence of an external bias and intradot Coulomb interaction. It is found that for a range of external biases sign reversal of the current polarization can be modulated. The system thus operates as a rectifier for spin current polarization. This effect follows from the interplay between the external irradiation and the Coulomb repulsion. The spin-polarized transport through a three-terminal device is also discussed. Spin current with high polarization could be obtained due to spin filter effect.     

Spin torque transfer structure with new spin switching configurations

Spin torque transfer structures with new spin switching configurations are proposed, fabricated and investigated in this paper. The non-uniform current-induced magnetization switching is implemented based on both GMR and MTJ nano devices. The proposed new spin transfer structure has a hybrid free layer that consists of a layer with conductive channels (magnetic) and non-conductive matrix (non-magnetic) and traditional free layer(s). Two mechanisms, a higher local current density by nano-current-channels and a non-uniform magnetization switching (reversal domain nucleation and growth) by a magnetic nanocomposite structure, contribute in reducing the switching current density. The critical switching current density for the new spin transfer structure is reduced to one third of the typical value for the normal structure. It can be expected to have one order of magnitude or more reduction for the critical current density if the optimization of materials and fabrication processes could be done further. Meanwhile, the thermal stability of this new spin transfer structure is not degraded, which may solve the long-standing scaling problem for magnetic random access memory (MRAM). This spin transfer structure, with the proposed and demonstrated new spin switching configurations, not only provides a solid approach for the practical application of spin transfer devices but also forms a unique platform for researchers to explore the non-uniform current-induced switching process.     

Some exact identities connecting one- and two-particle Green's functions in spin–orbit coupling systems

Some exact identities connecting one- and two-particle Green's functions in the presence of spin–orbit coupling have been derived. These identities are similar to the Ward identity in usual quantum transport theory of electrons. A satisfying approximate calculation of the spin transport in spin–orbit coupling system should also preserve these identities, just as the Ward identities should be remained in the usual electronic transport theory.     

Spin-polarized current through a lateral double quantum dot with spin–orbit interaction

We study the spin-polarized current through a vertical double quantum dot scheme. Both the Rashba spin–orbit (RSO) interaction inside one of the quantum dots and the strong intradot Coulomb interactions on the two dots are taken into account by using the second-quantized form of the Hamiltonian. Due to the existence of the RSO interaction, spin-up and spin-down electrons couple to the external leads with different strengths, and then a spin polarized current can be driven out of the middle lead by controlling a set of structure parameters and the external bias voltage. Moreover, by properly adjusting the dot levels and the external bias voltages, a pure spin current with no accompanying charge current can be generated in the weak coupling regime. We show that the difference between the intradot Coulomb interactions strongly influences the spin-polarized currents flowing through the middle lead and is undesirable in the generation of the net spin current. Based on the RSO interaction, the structure we propose can efficiently polarize the electron spin without the usage of any magnetic field or ferromagnetic material. This device can be used as a spin-battery and is realizable using the present available technologies.     

Reduction in critical current density of current-induced magnetization switching

We have investigated the current-induced magnetization switching in an exchange-biased spin valve structure. By using an unpatterned antiferromagnetic layer to pin the fixed Co layer, we obtained a lower switching current density by a factor of 5 than a simple spin valve structure. For the application, it is important to know how to keep the spin polarization when the thicker layer is pinned by an antiferromagnet. The unpatterned pinned ferromagnetic lead can be a good solution for spin-transfer-torque-activated device. The effect of Cu buffer layer on the top of the thin Co and Ru buffer layer under the thick Co layer on the current-induced magnetization switching in cobalt-based trilayer spin valves was also investigated. The experimental results showed that the Ru buffer layer in combination with Cu buffer layer could induce a decrease in the critical switching current by 30%, and an increase in the absolute resistance change by 35%, which is caused by an improvement of a microstructure of a thicker Co polarizer.     

Mean-free path effects in magnetoresistance of ferromagnetic nanocontacts

We investigated the mean-free path effects on the magnetoresistance of ferromagnetic nanocontacts. For most combinations of parameters the magnetoresistance monotonously decreases with increasing the contact cross-section. However, for a certain choice of parameters the calculations show non-monotonous behavior of the magnetoresistance in the region in which the diameter of the contact becomes comparable with the mean-free path of electrons. We attribute this effect to different conduction regimes in the vicinity of the nanocontact: ballistic for electrons of one spin projection, and simultaneously diffusive for the other. Furthermore, at certain combinations of spin asymmetries of the bulk mean-free paths in a heterocontact, the magnetoresistance can be almost constant, or may even grow as the contact diameter increases. Thus, our calculations suggest a way to search for combinations of material parameters, for which high magnetoresistances can be achieved not only at the nanometric size of the contact, but also at much larger cross-sections of nanocontacts which can be easier for fabriaction with current technologies. The trial calculations of the magnetoresistance with material parameters close to those for the Mumetal-Ni heterocontacts agree satisfactorily with the available experimental data.     

Electric tunable of electron spin polarization in hybrid magnetic-electric barrier structures

Electron spin-dependent transport properties have been theoretically investigated in two-dimensional electron gas (2DEG) modulated by the magnetic field generated by a pair of anti-parallel magnetization ferromagnetic metal stripes and the electrostatic potential provided by a normal metal Schottky stripe. It is shown that the energy positions of the spin-polarization extremes and the width of relative spin conductance excess plateau could be significantly manipulated by the electrostatic potential strength and width, as well as its position relative to the FM stripes. These interesting features are believed useful for designing the electric voltage controlled spin filters.     

The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures

We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band offset based on the experimental data, we found that the spin current densities strongly depend on the Mn concentration. The magnitude as well as the sign of the electron-spin polarization and the tunnel magnetoresistance can be tuned by varying the Mn concentration, the width of the paramagnetic layer, and the external magnetic field. By an appropriate choice of the Mn concentration and the width of the paramagnetic layer, the degree of spin polarization for the output current can reach 100% and the device can be used as a spin filter.     

Gap-mediated magnetization of a pseudo-one-dimensional system with a spin-orbit interaction

We argue that a pseudo-one-dimensional electron gas is magnetized when a voltage bias is applied with the Fermi level tuned to be in the energy gap generated by a spin-orbit interaction. The magnetization is an indication of spin-carrying currents due to the spin-orbit interaction. The origin of the magnetization, however, is essentially different from the “spin accumulation” in two-dimensional systems with spin-orbit interactions.     

Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions

Based on the scattering approach, we investigate transport properties of electrons in a one-dimensional waveguide that contains a ferromagnetic/semiconductor/ferromagnetic heterojunction and tunnel barriers in the presence of Rashba and Dresselhaus spin-orbit interactions. We simultaneously consider significant quantum size effects, quantum coherence, Rashba and Dresselhaus spin-orbit interactions and noncollinear magnetizations. It is found that the tunnel barrier plays a decisive role in the transmission coefficient and shot noise of the ballistic spin electron transport through the heterojunction. When the small tunnel barriers are considered, the transport properties of electrons are quite different from those without tunnel barriers.     

Transient domain wall displacement under spin-polarized current pulses

This paper investigates the non steady-state displacement of magnetic domain walls in a nanostrip submitted to a time-dependent spin-polarized current flowing along the nanostrip. First, numerical micromagnetic simulations show that a domain wall can move under application of a current pulse, and that the displacement resulting from a conversion of the domain wall structure is quantized. The numerical findings are subsequently explained in the framework of simplified analytic models, namely the 1D model and the point-core vortex model. We then introduce the concept of an angle linked to the magnetization of a general domain wall, and show that it allows understanding the transient phenomena quite generally. Simple analytic formulas are derived and compared to experiments. For this, charts are given for the key parameters of the domain wall mechanics, as obtained from numerical micromagnetic simulations. We finally discuss the limitations of this work, by looking at the influence of temperature elevation under current, presence of a non-adiabatic term, and of disorder.     

Effect of electric-field on spin transport and spin current in an organic semiconductor system

We use the two-component drift-diffusion model to study the spin density polarization in an organic semiconductor system under an external electric-field. The spin-dependent electrical-conductivity, the drift spin current and the diffusion spin current in the organic semiconductor are self-consistently derived. It is found that the spin current could be strongly influenced by the spin-dependent electrical-conductivity. When the spin-dependent conductivity varies from 0 to 0.5%, the spin current presents a very pronounced change almost three orders in magnitude. The electric-field could effectively enhance the spin-dependent electrical-conductivity and the spin current. Furthermore, the spin-dependent electrical-conductivity is position sensitive, but its position sensitivity goes down while electric-field is larger than about 1 mV/μm.     

Inter-particle spin-polarized tunneling in arrays of magnetite nanocrystals

Inter-particle spin-polarized tunneling was measured in an organically capped magnetite nanocrystal (NC) array deposited between 30 nm spaced gold electrodes. Magnetoresistance (MR) measurements performed around the blocking temperature (T_b) of the magnetic moments of the particles in the array, which was relatively high (220 K), yielded negative MR values of the order of 10-25% under moderate magnetic fields of several kOe. The field dependence of the MR followed closely the square of the film's magnetization and its voltage dependence indicated maximal spin polarization around the Fermi level. These findings suggested that the measured MR is the result of spin-polarized tunneling between individual magnetite NCs acting as superparamagnetic spin polarizers.