Individual,attractive defect centers in the SiO2-Si interface of μm-sized MOSFETs

In a micron-sized p-channel MOSFET, the alternate capture and emission of holes into a Coulomb-attractive defect center is analyzed by the random telegraph signal in the source-drain current. Anomalous switching is observed with a high channel conductance when the defect center is occupied, and a low channel conductance after re-emission. The rate constants show an inverse symmetry for capture and emission. The measured results are interpreted by a tunneling transfer of a hole bound in the channel at the attractive center to the defect center 2.4 nm deep in the oxide and vice versa. The energy offset of the two stable configurations can be linearly varied by the gate voltage. An excited state 40 meV above the ground state is observed for the defect level. The anomalous switching is caused by a mobility change rather than by a change in mobile charge carrier density. The tunneling transfer for Coulomb-attractive centers differs from the transfer observed for Coulomb-repulsive centers where activated emission is reported.     

Anomalous transparency of water-air interface for low-frequency sound

Sound transmission through a water-air interface is normally weak because of a strong mass density contrast. We show that the transparency of the interface increases dramatically at low frequencies. Almost all acoustic energy emitted by a sufficiently shallow monopole source under water is predicted to be radiated into air. Increased transparency at lower frequencies is due to the increasing role of inhomogeneous waves. For sources symmetric with respect to a horizontal plane, transparency is further increased by a destructive interference of direct and surface-reflected waves under water. The phenomenon of anomalous transparency has significant geophysical and biological implications.     

Measurement of low-frequency noise in tunnel diodes

Conclusions Our studies have revealed that the spectral density of low-frequency current fluctuations in GaAs tunnel diodes can be described by the relation Wi(u, F)=f² (u)mF^–, where the nonlinear function f²(u) is not proportional to the rms of excess diode current. The flicker nature of the current noise in tunnel diodes derives from conductance fluctuations on the p-n junction, which occur in tunnel diodes as well as in low-noise transistors at frequencies ranging from near zero to a few kiloheriz and produce noise of almost the same absolute intensty in both kinds of devices.Leningrad Polytechnic Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 20, No. 5, pp. 777–784, May, 1977.     

N/P沟道MOSFET1/f噪声的统一模型

对n／p两种沟道类型、不同沟道尺寸MOSFET的1／f噪声特性进行了实验和理论研究.实验结 果表明，虽然nMOSFET的1／f噪声幅值比pMOSFET大一个数量级，但是其噪声幅值均表现出和 有效栅压的平方成反比、和漏压的平方成正比、和沟道面积成反比的规律.基于该实验结果 ，认为MOSFET的1/f噪声产生机理为位于半导体_氧化物界面附近几个纳米范围内的氧化层陷 阱通过俘获和发射过程与沟道交换载流子，在引起载流子数涨落的同时也通过库仑散射导致 沟道载流子迁移率的涨落.在这两种涨落机理的基础上，引入了氧化层陷阱的分布特征及其 与沟道交换载流子的隧穿和热激活两种方式，建立了MOSFET l／f噪声的统一模型.实验结果 和本文模型符合良好. 关键词： 1/f噪声 MOSFET 氧化层陷阱 涨落     

Nature of the low-frequency noise in coherent radiation

The correction of the light intensity in one mode of a two-mode radiator oscillating at the difference frequency is calculated. The low-frequency noise is analyzed; the nature of this phenomenon is discussed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 40–43, March, 1975.The authors thanks V. L. Bonch-Bruevich for discussion of these results.     

强脉冲X射线辐照在Si-SiO2中感生的界面态及退火消除

利用强脉冲X射线对Si-SiO2界面进行了辐照,测量了界面态曲线和退火曲线。实验显示,经过强脉冲X射线对Si-SiO2界面进行的辐照,在Si-SiO2界面感生出新的界面态,感生界面态的增加与辐照剂量成正比,并且易出现饱和现象。总结出了感生界面态密度产额Dit随辐照剂量D变化的分布式,并定性分析了Dit随D变化的行为。随后进行的退火实验表明,强脉冲X射线辐照感生出的界面态越多,退火时这些界面态就消除得越快。退火过程显示有滞后现象,即辐照剂量大的阈电压漂移,在退火后恢复的绝对值,要小于辐照剂量小的阈电压漂移。导出了阈电压漂移随退火时间变化的关系,定性解释了滞后现象。     

强脉冲X射线辐照在Si-SiO2中感生的界面态及退火消除

 利用强脉冲X射线对Si-SiO₂界面进行了辐照，测量了界面态曲线和退火曲线。实验显示，经过强脉冲X射线对Si-SiO₂界面进行的辐照，在Si-SiO₂界面感生出新的界面态，感生界面态的增加与辐照剂量成正比，并且易出现饱和现象。总结出了感生界面态密度产额Dit随辐照剂量D变化的分布式，并定性分析了Dit随D变化的行为。随后进行的退火实验表明，强脉冲X射线辐照感生出的界面态越多，退火时这些界面态就消除得越快。退火过程显示有滞后现象，即辐照剂量大的阈电压漂移，在退火后恢复的绝对值，要小于辐照剂量小的阈电压漂移。导出了阈电压漂移随退火时间变化的关系，定性解释了滞后现象。     

Acoustic measures of low-frequency noise in extended high-frequency audiometry

A very high signal-to-noise ratio is required for equipment designed for extended high-frequency audiometry because listeners with almost no hearing ability in the extended high-frequency range may have normal hearing sensitivity in the lower frequencies. Two commercially available systems designed for pure-tone audiometry were evaluated both in the conventional and extended high-frequency range. Unwanted lower frequency signals greater than the noise floor occurred predominantly at presentation levels of approximately 110 dB SPL or higher. Test tones in the extended high-frequency range should be restricted to levels that are not associated with lower frequency noise.     

Lateralization of low-frequency tones and narrow bands of noise

It is well known and universally accepted that people's ability to use ongoing interaural temporal disparities conveyed via pure tones is limited to frequencies below 1600 Hz. We wish to determine if this limitation is the result of the constant amplitude and periodic axis-crossings which characterize pure tones. To this end, an acoustic pointing task was employed in which listeners varied the interaural intensitive difference of a 500-Hz narrow-band noise (the pointer) so that the position of its intracranial image matched that of a second, experimenter-controlled stimulus (the target). Targets were either pure tones or narrow bands of noise (50 or 100 Hz wide). The narrow bands of noise were delayed interaurally in two distinct manners: Either the entire waveform or only the carrier was delayed. In the latter case, the envelopes and phase-functions of the bands of noise were identical interaurally. This resulted in noises which resemble the pure tone case in that the interaural delay is manifested as a constant phase-shift and resemble ordinary noises in that the envelope and phase are random functions of time. Surprisingly, it appears that all three targets were lateralized virtually identically regardless of frequency or bandwidth. Apparently, the dynamically changing envelopes and phases did not affect the listeners' use of interaural temporal disparities in any discernible fashion.     

Microscopic origin of low-frequency flux noise in josephson circuits

We analyze the data and discuss their implications for the microscopic origin of the low-frequency flux noise in superconducting circuits. We argue that this noise is produced by spins at superconductor insulator boundary whose dynamics is due to RKKY interaction. We show that this mechanism explains size independence of the noise, different frequency dependences of the spectra reported in large and small SQUIDs, and gives the correct intensity for realistic parameters.     

隧穿磁电阻效应磁场传感器中低频噪声的测量与研究

基于隧穿磁电阻效应(TMR)的磁场传感器具有很高的磁场灵敏度, 但同时噪声也较大,有效抑制TMR磁场传感器的噪声, 尤其是低频噪声的抑制对于其在高灵敏度要求场合的应用具有重要的意义. 本文采用高精度数据采集卡搭建了噪声测量系统, 测量了全桥结构TMR磁场传感器的噪声频谱图, 发现TMR传感器的噪声在低频段表现为1/f特性, 同时噪声功率谱密度与工作电流平方成正比关系; 低频噪声在自由层翻转区间内噪声急剧增大, 证明了1/f噪声主要来源于磁噪声, 这一结果为TMR磁场传感器的噪声特性优化指明了方向.     

Relationship between low-frequency noise and the stability of nonequilibrium structures

V. I. Lenin All-Union Electrical Engineering Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 32, No. 7, pp. 885–890, July, 1989.     

Cortisol response and subjective sleep disturbance after low-frequency noise exposure

A previous experimental study showed that the cortisol response upon awakening was reduced following nights with low-frequency noise exposure. This study comprised a larger number of subjects and an extended period of acclimatisation nights. In total, 26 male subjects slept during five consecutive nights in a sleep laboratory. Half of the subjects were exposed to low-frequency noise (40 dBA) on the 4th night and had their reference night (24 dBA) on the 5th night, while the reverse conditions were present for the other half of the group. Subjective sleep disturbances were recorded by questionnaires and cortisol response upon awakening was measured in saliva. The results showed that subjects were more tired and felt less socially orientated in the morning after nights with low-frequency noise. Mood was negatively affected in the evening after nights with low-frequency noise. No effect of noise condition was found on the cortisol secretion. There was a significant effect of group and weekday, indicating that further methodological developments are necessary before saliva cortisol secretion can be reliably used as an indicator of noise-disturbed sleep.     

The low-frequency electrical noise as reliability estimation for high power semiconductor lasers

The low-frequency electrical noise of 980 nm InGaAsP/InGaAs/GaAlAs double quantum well (DQW) high power semiconductor lasers (LDs) is measured when the devices are in conducting state and in unconducting state. The correlation between the noise and device reliability is discussed. The results indicate that there is a good relation between the noise and device reliability for most devices. The devices with higher noise are usually unreliable whether the device is in conducting state or in unconducting state.