HfC系超高温陶瓷抗氧化烧蚀性能研究

以热压烧结制备不同配比的HfC-SiC超高温陶瓷试样,采用超音速火焰分别在2300K和2500K下进行600s烧蚀试验,利用SEM和EDS对烧蚀后材料的微观结构和成分进行分析.结果表明:HfC-SiC体系超高温陶瓷具有优异的抗氧化烧蚀性能,30vol; SiC-HfC材料的抗烧蚀性能优于50vol;SiC-HfC材料与纯HfC材料,其抗氧化烧蚀主要依赖于HfCxOy与SiO2所生成的氧化层.纯HfC陶瓷的烧蚀氧化层与基体粘附性弱,出现了明显的分层,而SiC的加入使得氧化层与基体之间粘附性加强.烧蚀温度升高,烧蚀层厚度增加,抗烧蚀性能下降.与此同时,烧蚀温度提高会使Si元素有较多的损失,导致氧化层不致密;当SiC含量增加到50vol;后,内层HfCxOy骨架松散,不利于材料的抗氧化烧蚀.     

添加锆英石、B4C和焦粉对铝碳质耐火材料抗氧化性能影响

在Al2O3-C质耐火材料中添加锆英石、B4C和焦炭,通过高温原位反应生成了ZrC-ZrB2-SiC复合非氧化物耐高温物相.采用XRD分析了不同锆英石、B4C和焦炭的添加量与不同烧成温度下反应产物的物相组成,并采用XRD与SEM进一步研究了含有ZrC-ZrB2-SiC复合非氧化物的铝碳质耐火材料的抗氧化性能及其抗氧化的机理.结果表明:当锆英石-焦炭-B4C混合粉体的加入量为20;,在1550 ℃保温3 h能在铝碳质耐火材料的基质中原位合成ZrC-ZrB2-SiC复合非氧化物,制备得到相应的铝碳质复合耐火材料.ZrC-ZrB2-SiC复合非氧化物在氧化条件下可生成玻璃相,形成致密保护层能够阻止其进一步氧化,从而显著提高铝碳质材料的抗氧化性能.     

C/SiC复合材料表面SiC/Zr-Si-C/SiC复合涂层的制备及性能研究

为提高C/SiC复合材料的抗氧化性能,设计了致密的CVD-SiC涂层和多孔的熔盐法Zr-Si-C涂层相间的涂层体系.通过实验测试,建立了该涂层的生长模型,并考核了材料在1773 K的抗氧化性能.氧化结果显示,材料在氧化2h后的失重率为仅0.67;,弯曲强度保留率为99.7;,不同组成相间的结构涂层呈现出优异的抗氧化性能.     

Al粉粒度及其添加量对SiC陶瓷材料结构和性能的影响

以Al粉为烧结助剂,采用无压烧结工艺于1600℃下保温3 h烧制SiC陶瓷材料,研究了不同Al粉粒度及其添加量对SiC陶瓷材料结构和性能的影响.结果表明:Al粉可促进SiC陶瓷材料的烧结和力学性能的提高,同时起抗氧化的作用,且粒度较小的Al粉对其性能提升的幅度较大.当添加4wt;粒度为48μm的Al粉时,SiC陶瓷材料的性能较佳,体积密度和显气孔率分别为2.69 g/cm3和5.8;,显微硬度和抗折强度分别为2790 HV和189 MPa.SiC陶瓷材料烧结性能和力学性能的提高可归因于Al粉的促烧结作用,及其氧化产物Al2 O3和原位生成的少量莫来石分布在SiC颗粒间所起的强化作用.     

添加多晶硅废料制备SiC/Si3N4复相结合SiC耐火材料

以碳化硅、多晶硅废料、金属硅粉为原料,纸浆废液为结合剂,采用反应烧结工艺制备SiC/Si3N4复相结合SiC耐火材料.运用热力学分析了利用多晶硅废料代替部分工业金属硅粉和碳化硅细粉制备SiC/Si3N4复相结合SiC耐火材料的理论可行性.系统地分析了单质硅氮化机理,提出Si首先与N2中的微量氧反应形成气态SiO,至体系氧分压降至P(02)/pθ＜1 × 10-18.9,Si直接氮化.研究了多晶硅废料对材料物相组成和微观结构的影响.结果表明:利用多晶硅废料制备的SiC/Si3 N4复相结合SiC耐火材料性能优异;多晶硅废料的添加使反应生成的结合相由原先单一的Si3 N4变为Si3 N4和β-Sic,两结合相发挥各自的性能优势;多晶硅废料中的硅粉粒径小,活性大,与工业金属硅粉共存时能发生逐级氮化作用,增加了纤维状Si3N4含量,优化了材料结构.     

陶瓷先驱体聚硅氮烷(PSZ)加入Si、MoSi2填料制备石墨抗氧化复合涂层的研究

采用陶瓷先驱体聚硅氮烷(PSZ)为主要原料,并加入Si、MoSi2填料,于石墨表面制备高温抗氧化涂层.借助扫描电镜和X射线衍射仪等分析手段对复合涂层的微观结构和相组成进行表征,并对涂层的抗氧化性能进行了初步研究.结果表明,涂层厚度约为30μm,内层为化学结合的SiC-Si过渡层,外层为MoSi2-SiC-SiCN氧阻挡层,涂层表面较为平整、致密,与过渡层结合紧密.涂层试样抗氧化效果与氧化温度有关,当氧化温度为1200℃时,抗氧化能力较差,氧化失重率约为10.98;,当氧化温度高于1300℃时,高温封填剂的作用发挥充分,抗氧化性能显著提高,氧化失重率仅为1.15;.     

ZrB2-SiBCN复合陶瓷恒温氧化行为研究

高温结构材料ZrB2陶瓷由于其烧结温度高,应用受到限制,SiBCN聚合物前驱体的添加降低了ZrB2的烧结温度,并能够获得致密的ZrB2-SiBCN复合陶瓷.研究其氧化行为对于ZrB2-SiBCN陶瓷在高温领域的应用有重要的意义.通过XRD、SEM等手段对陶瓷1300℃时氧化行为进行了分析和研究,结果表明,在高温空气环境下,SiBCN陶瓷氧化直接生成硼硅酸盐玻璃,硼硅酸盐玻璃粘度低,铺展速度快,在陶瓷表面可形成氧化物保护层,阻碍陶瓷的进一步氧化.ZrO2与SiO2反应生成新的ZrSiO4相,使硼硅酸玻璃层因被消耗而变薄,ZrSiO4附近的ZrB2颗粒从硼硅酸盐玻璃层内裸露出来,加速了ZrB2的氧化.ZrSiO4相的生成降低了硼硅酸盐玻璃对陶瓷的抗氧化保护作用.     

BN对镁基含碳耐火材料性能的影响

以电熔镁砂细粉、用后镁碳砖细粉、α-Al2O3微粉和石墨为主要原料,以酚醛树脂为结合剂,以BN微粉为添加剂,经混炼、成型、热处理后制成镁基含碳耐火材料,重点研究了添加剂BN加入量(质量分数分别为0、0.5;、1.0;、1.5;、2.0;和2.5;)及煅烧温度(分别为1250℃、1375℃和1500℃)对烧后试样体积密度、显气孔率、常温耐压强度、烧后线变化率、抗氧化性、显微结构和矿物相组成的影响.结果表明:加入BN以及提高煅烧温度有利于提高烧后镁基含碳耐火材料的烧结性能.BN在高温条件下优先与环境中氧发生反应生成三氧化二硼,并与基质中电熔镁砂及用后镁碳砖中的氧化镁反应生成低熔点相硼酸镁,硼酸镁液相的生成是镁基含碳材料烧结性以及抗氧化性增强的主要原因.烧后试样主晶相为方镁石,次晶相为镁铝尖晶石.     

沉积温度对硬质合金表面MPCVD法制备SiC过渡层的影响

采用MPCVD法,以氢气和四甲基硅烷为先驱气体,YG6硬质合金刀片为基体材料,在不同沉积温度下制备了SiC涂层;并选用致密连续且附着性能优良的SiC涂层作为过渡层制备金刚石涂层.使用场发射扫描电镜、能谱仪和掠X射线衍射仪对SiC涂层和金刚石涂层的形貌和组成进行了分析,并对SiC涂层和金刚石涂层的附着力进行测试.结果表明,随着沉积温度升高,SiC涂层先由团聚在一起的β-SiC微晶相先转变为颗粒状和片状β-SiC,进而转变为团聚在一起的非晶态的SiC晶须;SiC涂层的厚度呈递增、致密度呈现先增强后减弱、表面粗糙度整体呈现先减小后增大、附着力呈先升高后降低的趋势.沉积温度为800℃时制备的片状SiC涂层与硬质合金基体有着良好的结合强度,将其作为过渡层时,能够在硬质合金表面制备出均匀、连续、致密的且附着力良好的金刚石涂层.     

Na+对制备Al4SiC4/Al4O4C复合耐火材料的影响

以焦宝石、活性炭和铝粉为原料,添加Na2CO3制备Al4SiC4/Al4O4C复合耐火材料.采用化学分析、XRD和SEM等测试技术,研究了Na+对材料物相组成和显微结构的影响.结果表明:添加Na2CO3加速了Al2O3和活性炭的反应,促进了Al4O4C的生成.未添加Na2CO3时生成的Al4SiC4晶粒表面光滑,添加Na2CO3后Al4SiC4晶粒粗糙、凹凸,缺陷明显增加.此外,未添加Na2CO3的试样中生成的Al4O4C呈短纤维状,添加Na2CO3后全部转变为细小颗粒.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.