Variable‐range hopping dc conduction in dysprosium oxide films grown on Si substrates

Thin dysprosium oxide films were prepared on p‐Si substrates to form MOS structure. The oxide films were annealed at different conditions and their crystal structures were determined by X‐ray diffraction. The dc electrical transport properties of the devices were studied in the temperature range (293‐400 K). The current‐temperature characteristics was analysed according to Mott's variable‐range hopping mechanism. The mechanism's parameters were calculated and compared with the results obtained by X‐ray diffraction. It was established that as the average grain size of air‐annealed films increases, the disorder degree parameter T₀ decreases and the density of states at Fermi level increases, which leads to decrease the average hopping distance. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and Characterisation of (CuInTe2)1‐x(2 ZnTe)x Solid Solution Single Crystals

The crystal structure as well as the optical properties in the band gap region of (CuInTe₂)_1‐x(2 ZnTe)_x solid solution single crystals grown by directional freezing have been studied. The lattice constants exhibit a linear dependence on crystal composition. The chalcopyrite‐sphalerite phase transition was observed between x = 0.3 and x = 0.4°. The variation of the band gap with respect to crystal composition can be described by a quadratic expression.     

Influence of photonic excitations on the electrical parameters of TlInS2 crystals

The photo‐excitation effect on the current transport mechanism in TlInS₂ crystals has been studied by means of dark and illuminated conductivity measurements. The temperature‐dependent electrical conductivity analysis in the temperature region of 110‐340 K revealed the domination of the thermionic emission and the thermally assisted variable range hopping (VRH) of charge carriers above and below 160 K, respectively. Above 160 K, the conductivity activation energies in the dark are found to be 0.28 and 0.15 eV in the temperature regions of 340‐240 K and 230‐160 K, respectively. In the temperature region of 110‐150 K, the dark variable range hopping analysis revealed a density of localized states of 1.99×10²² cm^–3eV^–1, an average hopping distance of 0.53 nm and an average hopping energy of 79.65 meV. When the sample was photo‐excited, the values of the conductivity activation energies, the density of localized states near the Fermi level and the average hopping energy were observed to decrease sharply with increasing illumination intensity. On the other hand, the average hopping distance increased with rising illumination intensity. Such behaviours were attributed to the Fermi level shift and/or trap density reduction by electron‐hole recombination. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure and characterization of a novel organic optical crystal: 4‐chloro‐3‐nitrobenzophenone

Single crystals of a novel organic material, 4‐Chloro‐3‐Nitrobenzophenone (4C3N) were grown from acetone solution employing the technique of controlled evaporation. 4C3N belongs to the Orthorhombic system, with a = 12.9665(11) Å, b = 7.4388(6) Å, c = 24.336(2) Å, α = β = γ = 90°. FT‐IR study has been performed to identify the functional groups. The transmittance of 4C3N has been used to calculate the refractive index n; the extinction coefficient K and both the real ε_r and imaginary ε_i components of the dielectric constant as functions of photon energy. The optical band gap of 4C3N is 2.7 eV. Thermo gravimetric analysis and differential thermal analysis have also been carried out, and the thermal behavior of 4C3N crystal has been studied. The mechanical properties have been investigated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

DC electrical conduction in tungsten phosphate glasses

The dc conductivity of semiconducting tungsten phosphate glasses of three different compositions has been measured over a temperature range 100–400 K. The data have been analysed in the light of existing models of polaronic hopping conduction. The high-temperature region can be qualitatively explained by small-polaron hopping between nearest neighbours, while at low temperatures (below 150 K), the behaviour can be explained by Mott's variable-range hopping. The value of the electron decay constant α estimated from variable-range hopping is of the order of 2 Å^?1, but the estimated disorder energy W_D is twice as large as the measured low-temperature activation energy.     

Luminescence gap in hydrogenated amorphous silicon

The “luminescence gap” is used instead of the thermalization gap and the hopping-gap because the gap is obtained from the luminescence measurement. The luminescence gaps in hydrogenated amorphous silicon (a-Si:H) are observed in the temperature range from 4.2 to 225 K for the films prepared at different substrate temperatures 170 to 300 °C by plasma CVD. It is shown from the temperature dependence of the luminescence gap that the luminescence edges are at the localized band tail states at which the waiting time for the hopping is equal to the life time of the luminescence. The excitation energy dependence of the luminescence peak energy similar to that of the porous Si has been observed.     

Growth and characterization of 4‐Aminopyridinium‐4‐nitro phenolate single crystals

Organic optical material 4‐Aminopyridinium‐4‐nitro phenolate (4AP4NP) has been synthesized, and single crystals of size 20 x 14 x 6 mm³ have been grown from acetone solvent at room temperature by solvent evaporation technique. The grown crystals have been characterized by X‐ray diffraction to determine the cell parameters, and by FT‐IR technique to confirm the formation of the expected compound. The crystal belongs to monoclinic crystal system with space group P2₁/a.The structural perfection of the grown crystals has been analyzed by high‐resolution X‐ray diffraction (HRXRD) rocking curve measurements. The thermal stability of the compound has been determined by TG‐DTA curves. The transmittance of 4AP4NP has been used to determine the refractive index n; the extinction coefficient K and both the real ε_r and imaginary ε_i components of the dielectric constant as functions of photon energy. The optical band gap of 4AP4NP is 2.4 eV. The dielectric and mechanical behavior of the specimen was also studied. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,compositional and optical properties of gallium selenide thin films doped with cadmium

Polycrystalline cadmium doped gallium selenide thin films were obtained by the thermal co‐evaporation of GaSe crystals and Cd grains onto glass substrates. The structural, compositional and optical properties of these films have been investigated by means of X‐ray diffraction, energy dispersive X‐ray analysis and UV‐visible spectroscopy techniques, respectively. Particularly, the elemental analysis, the crystalline nature, the energy band gap, the refractive index, the dispersion energy and static dielectric constant have been identified. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct forbidden energy band gap of 1.22 eV. The cadmium doping has caused a significant decrease in the values of the energy band gap and in all the dispersive optical parameters, as well. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Low temperature photoluminescence studies on semiorganic tris thiourea copper (I) chloride single crystal

Semiorganic tris thiourea copper (I) chloride (TTCC) single crystals have been synthesized from copper (II) chloride via slow evaporation technique. The stoichiometry of the grown anhydrous complex crystal has been confirmed by elemental CHNS (C, H, N and S) and atomic absorption spectrophotometric (AAS) analysis. The crystal structure with space group has been confirmed by single crystal and powder X‐ray diffraction (XRD) studies. The FTIR study assigned the presence of functional groups and confirmed the co‐ordination of metal ions with thiourea. It also confirmed the transition from Cu²⁺ to Cu⁺ when thiourea combined with Copper (II) chloride. The optical transparency of the crystal has been studied by UV‐Vis spectrum and deduced the energy gap. The room temperature Photoluminescence (PL) spectrum reported maximum emission line at 410.92 nm and Stokes shift has been determined as 75 nm or 16.5 eV. Low temperature luminescence study from 300 K to 77 K exhibited three blue emission peaks and one green emission peak. The green emission band has been assigned to recombination of an electron in a shallow trap and Cu²⁺. Blue emission has been attributed to S^2‐ vacancies. The interesting hysteresis loop has been exhibited by the variation of energy gap with low temperature. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical and Photoelectrical Properties of Vacuum Deposited SnSe Thin Films

Polycrystalline thin films of tin selenide have been prepared by vacuum deposition at a substrate temperature of 150°C and reported. X‐ray diffraction, optical transmission, electrical conductivity and photoconductivity studies have been carried out on these films. Annealing the films at 300°C for 2 hours improves the crystallinity and a preferred orientation along the (111) plane develops. The optical transmission measurement reveals that the SnSe thin films have a direct allowed band gap of 1.26 eV. Electrical conductivity study shows that the conductivity increases with increasing temperature. The observed electrical conductivity at low temperature is explained based on hopping conduction mechanism. The photoconductivity measurement indicates the presence of continuously distributed deep localised gap states in this material.     

Electrical properties of TiO2 thin films

The electrical properties of n-type titanium dioxide thin films deposited by magnetron-sputtering method have been investigated by temperature-dependent conductivity. We observed that the temperature dependence of the electrical conductivity of titanium dioxide films exhibits a crossover from T^?1/4 to T^?1/2 dependence in the temperature range between 80 and 110 K. Characteristic parameters describing conductivity, such as the characteristic temperature (T₀), hopping distance (R_hop), average hopping energy (Δ_hop), Coulomb gap (Δ_C), localization length (ξ) and density of states (N(E_F)), were determined, and their values were discussed within the models describing conductivity in TiO₂ thin films.     

Preparation,single crystal growth and characterization of bis(tetrabutylammonium)bis(4,5‐dithiolato‐1,3‐dithiole‐2‐thione)copper

The preparation and single crystal growth of bis(tetrabutylammonium)bis(4,5‐dithiolato‐1,3‐dithiole‐2‐thione)copper, (I), are described. The energy gap Eg of (I) is about 2.38 eV. The nonlinear optical susceptibility χ⁽³⁾ is about 1.3×10^‐3 esu at 1064 nm. The characterization of (I) has been performed by electronic absorption, infrared and X‐ray powder diffraction spectroscopy. The thermal behavior of (I) has been investigated by means of thermogravimetric analysis (TGA) and differential thermal analysis (DTA) measurements in air. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal data and some physical properties of Tl2InGaTe4 crystals

The room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl₂InGaTe₄ crystals are reported for the first time. The X‐ray diffraction technique has revealed that Tl₂InGaTe₄ is a single phase crystal of tetragonal body‐centered structure belonging to the space group. A Debye temperature of 124 K is calculated from the results of the X‐ray data. The current‐voltage measurements have shown the existence of the switching property of the crystals at a critical voltage of 80 V. The dark electrical resistivity and Hall effect measurements indicated the n ‐type conduction with an electrical resistivity, electron density and Hall mobility of 2.49×10³ Ω cm, 4.76×10¹² cm^–3 and 527 cm²V^–1s^–1, respectively. The photosensitivity measurements on the crystal revealed that, the variation of photocurrent with illumination intensity is linear, indicating the domination of monomolecular recombination at room temperature. Moreover, the spectral distribution of the photocurrent allowed the determination of the energy band gap of the crystal studied as 0.88 eV. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electronic absorption spectra of lead iodide

Optical absorption studies on gel grown single crystals and vacuum evaporated thin film of lead iodide have been carried out at room temperature and liquid nitrogen temperature. The exciton peak in the case of gel grown crystal was observed at 4940 Å whereas for the film at 4900 Å. The presence of lead colloids in the film was revealed through a broad featureless band around 5500 Å. The absorption tails in the temperature range from 80 to 300 K are found to obey Urbach rule. Examining the various power law dependences of the observed optical density on photon energy, it has been established that the transition is of direct type resulting in a band gap of 2.53 ev.     

Electrical and optical properties of chalcogenide amorphous semiconductors modified with Ni

The electrical and optical properties of the chalcogenide semiconductor (Se₃₂Te₃₂As₄Ge₃₂)_100?xNixitx have been studied. As the Ni concentration is increased the electrical dc conductivity is drastically increased and variable range hopping conduction becomes dominant even above room temperature. The optical energy gap decreases with the Ni concentration from 1.18–0.95 eV. Ni-atoms in the chalcogenide semiconductor donate free electrons which occupy the gap state. This occupation causes the shift of the Fermi level toward the conduction band. It is an effect of this shift that the thermal activation energy is decreased. The decrease in optical energy gap is independent of the shift of the Fermi level and is ascribable to the appearance of the additional level located at 0.95 eV above the top of the valence band. This level originates from the 3d-level of the Ni-atom.     

Diamagnetic and photoabsorption characterisation of gel‐grown cadmium oxalate single crystals

Perfect single crystals of cadmium oxalate trihydrate have been grown using the slow and controlled reaction between Cd⁺² and (C₂O₄)^‐2 ions in agar‐agar gel, resulting in the formation of insoluble product Cd(COO)₂.3H₂O. The optimum growth parameters have been determined. The variation of magnetic moment of the grown crystals under an applied static magnetic field is studied and the material is found to be diamagnetic. The polarizability is found sensitive to optical band gap. An empirical relation between magnetic susceptibility and electronic polarizability has been established. Optical absorption spectra of the sample recorded in the range 200‐2500 nm reveal transitions involving absorption and emission of phonons. The detailed study supports the existence of allowed direct and indirect allowed gaps in the material. The direct allowed transition prevails in the region of relatively higher photon energy. Some feeble disorder in the crystal is conceived to be present. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,thermal, mechanical and z‐scan studies on 4‐nitrophenol single crystals

4‐nitrophenol (4‐NP) single crystals have been grown by using slow evaporation and slow cooling techniques. A single crystal with size in the range of 7x3.4x1.8cm³ has been obtained by slow cooling method. The grown crystals have been subjected to various characterization studies. The powder XRD spectrum of 4‐NP reveals the good crystalline nature of the grown crystal. Single crystal XRD studies show that the crystal belongs to monoclinic system with cell parameters of a=6.09 Å, b=8.79 Å, c=11.61 Å, α=γ=90°, β=103.15°. The resultant FTIR spectrum confirms the various functional groups present in 4‐NP. Thermal analysis has been performed on the material to study the thermal stability of 4‐NP. The grown crystals belong to the category of soft materials as confirmed by Vickers Hardness tests. The optical transmiitance of 4‐NP single crystals has been measured from Vis‐IR spectroscopy study. The nonlinear optical properties have been analyzed by z‐scan technique and 4‐NP is found to be self defocusing because of its negative nonlinear refractive index. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization

High quality single crystals of ternary AgGaS₂ (AGS) semiconductor with chalcopyrite structure have been grown by chemical vapor transport (CVT) technique using iodine as a transporting agent at different growth zone temperatures. The powder X‐ray diffraction and single crystal X‐ray diffraction studies indicate that the as‐grown AGS crystals belong to the tetragonal (chalcopyrite) system with (112) plane as the dominant peak. The full width at half maximum (FWHM) of the X‐ray rocking curve for the as‐grown AGS single crystal is 5 arcsec. The energy dispersive X‐ray analysis (EDAX) and optical transmission spectra of as‐grown AGS single crystals grown at different conditions show the almost same composition and band gap (2.65 eV). Photoluminescence (PL) spectra of as‐grown AGS single crystals show prominent band edge emission at 2.61 eV. The resistivity of the as‐grown AGS single crystal has been measured. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and Characterization of Single Crystals of the Ternary Compound TlGaTe2

The electrical conductivity and the Hall effect for TlGaTe₂ crystals have been measured over a wide temperature range. The crystal used for our study was grown by the Bridgman technique and possessed p-type conductivity. The energy gap has been found to be 0.84 eV, whereas the ionization energy has the value 0.25 eV. The variation of the Hall mobility as well as the carrier concentration with temperature was investigated. The scattering mechanism of the carrier in the whole temperature range of investigation was checked.     

Growth and characterization of nonlinear optical zinc hydrogen phosphate single crystal grown in silica gel

Good optical quality single crystals of zinc hydrogen phosphate (ZnHPO₄) having dimensions up to 8×2×2 mm³ have been grown with the aid of sodium meta silicate gel. Single crystal XRD studies confirm that the crystal belongs to the orthorhombic system with space group P2₁2₁2₁. The functional groups present in the crystals were confirmed using FTIR technique. Optical absorbance shows very low absorption in the entire visible region. Differential thermal and thermo gravimetric analysis confirmed that the crystal is stable up to 193°C. Photoconductivity study reveals positive photoconductivity in the presence of photo active centers formed by trap energy levels. The NLO activity of the crystal was confirmed by Kurtz powder technique. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)