Bridgman growth of langasite‐type piezoelectric crystals

Three langasite family crystals of Sr₃Ga₂Ge₄O₁₄ (SGG), Ca₃NbGa₃Si₂O₁₄ (CNGS), and Sr₃NbGa₃Si₂O₁₄ (SNGS) were successfully grown by the modified Bridgman method. Among them, SGG crystals up to 2 inches were obtained with the multi‐crucible industrial Bridgman furnace; SNGS crystal grown in any orientation direction other than along a‐axis was realized. Commercially availability SGG boules and the advantage in SNGS crystal indicated that the modified Bridgman technique is a prospective method to realize the mass‐production of the langasite‐type crystals. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and spectroscopic investigation of Yb/Nd co‐doped KLu(WO4)2 laser crystals

Single crystals of Yb, Nd: KLu(WO₄)₂ (Yb, Nd: KLW) of dimensions up to 40mm× 40mm×5mm have been grown by top‐seeded solution growth (TSSG) method. X‐ray powder diffraction pattern was measured and compared with that of Nd: KLuW and Yb: KLuW. Absorption and fluorescence spectra were measured at room temperature. The Judd‐Ofelt theory was applied to analyze the spectrum of Nd, Yb: KLuW crystal. The intensity parameters Ω_t (t=2, 4 and 6) were calculated as Ω₂=20.68×10^‐20cm², Ω₄=11.04×10^‐20cm², Ω₆=6.74×10^‐20cm² respectively, with a root mean square deviation of 0.58×10^‐20 cm². (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characterization of large‐sized Nd:YAG single crystals grown by horizontal directional solidification

Nd³⁺‐doped Y₃Al₅O₁₂ single crystals have been grown by the horizontal directional solidification (HDS) method in different thermal zone. The Grashof (G_r), Prandtl (P_r), Marangoni (M_a) and Rayleigh (R_a) numbers of melt in HDS system have been discussed for our experimental system to understand the mechanism of melt flow patterns and concentration gradient of dopant. The concentration gradient of Nd³⁺ ions was explained with melt flow processes during crystal growth in different thermal zone, and results indicated that high growth temperature will be helpful for uniformity of dopant in HDS‐grown single crystal. The main microscopic growth defects such as bubbles and irregular inclusions in HDS‐grown Nd:YAG crystals were observed, and the causes were discussed as well. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Broad near‐infrared fluorescence properties of Nd‐doped PbClF crystals

Nd‐doped PbClF crystals were grown with modified Bridgman method. Broad and flat emission band at 1.0 μm was observed. The FWHM value of 0.0091 wt.% Nd³⁺‐doped PbClF crystal at 1064 nm reached up to 30 nm with the peak emission cross‐section of 1.05×10^‐19 cm². All the results indicated that Nd‐doped PbClF crystal should be a promising tunable and ultrafast laser material. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth and spectral analysis of Dy3+ and Er3+ doped KPb2Cl5 as a mid‐infrared laser crystal

This paper reports crystal growth and optical characteristics of dysprosium (Dy³⁺) and erbium (Er³⁺) doped mid‐infrared laser crystal ternary‐potassium‐lead‐chloride (KPb₂Cl₅). Two transparent crystals with good optical quality have been grown successfully by using the Bridgman technique,the largest crystal size reaches up to ∅︁10×60mm². Measurements of X‐ray diffraction(XRD) and absorption spectra were carried out. Based on Judd‐Ofelt theory, the intensity parameters Ω_t(t=2,4,6), the experimental and theoretical oscillator strengths have been obtained.The intensity parameters Ω_t(t=2,4,6) of Er³⁺:KPb₂Cl₅ were calculated to be Ω₂=5.10×10^‐20 cm², Ω₄=1.25×10^‐20 cm², Ω₆=0.83×10^‐20 cm², and the values for Dy³⁺:KPb₂Cl₅ were calculated to be Ω₂=6.26×10^‐20 cm², Ω₄=2.45×10^‐20 cm², Ω₆=0.04×10^‐20 cm² respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Enhancement of thermoelectric efficiency in vapor deposited Sb2Te3 and Sb1.8In0.2Te3 crystals

Pure and indium doped antimony telluride (Sb₂Te₃) crystals find applications in high performance room temperature thermoelectric devices. Owing to the meagre physical properties exhibited on the cleavage faces of melt grown samples, an attempt was made to explore the thermoelectric parameters of p‐type crystals grown by the physical vapor deposition (PVD) method. The crystal structure of the grown platelets (9 mm× 8 mm× 2 mm) was identified as rhombohedral by x‐ray powder diffraction method. The energy dispersive analysis confirmed the elemental composition of the crystals. The electron microscopic and scanning probe image studies revealed that the crystals were grown by layer growth mechanism with low surface roughness. At room temperature (300 K), the values of Seebeck coefficient S (⊥ c) and power factor were observed to be higher for Sb_1.8In_0.2Te₃ crystals (155 μVK⁻¹, 2.669 × 10⁻³ W/mK²) than those of pure ones. Upon doping, the thermal conductivity κ (⊥ c) was decreased by 37.14% and thus thermoelectric efficiency was improved. The increased figure of merit, Z = 1.23 × 10⁻³ K⁻¹ for vapour grown Sb_1.8In_0.2Te₃ platelets indicates that it could be used as a potential thermoelectric candidate.     

The absorption and circular dichroism spectra of langasite family crystals doped with chromium ions

The absorption and circular dichroism spectra of langasite family crystals, La₃Ga₅SiO₁₄, La₃Ga₅GeO₁₄, Ca₃Ga₂Ge₄O₁₄, Sr₃Ga₂Ge₄O₁₄ (red), Sr₃Ga₂Ge₄O₁₄ (green), La₃Ta_0.5Ga_5.5O₁₄, and La₃Nb_0.5Ga_5.5O₁₄, which were doped with chromium ions, have been investigated in the range of 240–850 nm. It is shown that chromium ions are incorporated into the structure of the investigated crystals both in the octahedrally (Cr³⁺ ion in 1a octahedron) and tetrahedrally (Cr⁴⁺ ion in 2d tetrahedron) coordinated positions. The ion ratio Cr³⁺/Cr⁴⁺ changes in a wide range in the crystals studied.     

Concentration distribution of Nd3+ In Nd:Gd3Ga5O12 crystals studied by optical absorption method

Nd:Gd₃Ga₅O₁₂ crystals with different concentrations of Nd³⁺ were grown by Czochralski method, their absorption spectra were measured at room temperature. By using the optical absorption method, the effective distribution coefficient k_eff for Nd³⁺ in GGG was fitted to be 0.40±0.01, which is higher than that of Nd³⁺ in YAG. The 808nm absorption cross‐section was calculated to be 4.0±0.2×10^‐20cm^‐2. The lengthways and radial concentration distribution of Nd³⁺ in the crystals were also analyzed and discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Bridgman and Czochralski growth of Ge?Si alloy crystals

Ge_1–xSi_x crystals were grown with the Bridgman and the Czochralski method over a wide concentration range. With the Bridgman process single crystals up to 40 at.% Si were possible. The reasons for polycrystalline growth were the permanent contact of the interface with the crucible wall in combination with curvature towards the crystal and inclusions of high Si concentration. Analysis of striations in Czochralski grown material showed that in this process the crystal does not continuously grow in one direction but consists of piece-wise grown crystals in which the composition permanently changes. According to that fact the main reason for polycrystalline growth in the Czochralski process is common due to lattice mismatch between the seed and equilibrium concentration transients in the crystal corresponding to the microscopic growth rates.     

Growth of PbI2 single crystal by the top seed vertical zone melting method

PbI₂ is a type of syntectic compound, and its single crystal is one of the room temperature semiconductor nuclear radiation detector materials. A new method for the growth of the PbI₂ single crystal is proposed in this article, which was named the top seed vertical zone melting method (TSVZMM), directly from the synthesis of polycrystal with analytically pure lead and iodine, by controlling the decomposition and stratification of the melt and the stoichiometry of the PbI₂ crystal. Impurities in the crystal and the coagulating droplets of lead were eliminated during the PbI₂ crystal growth process from the top to bottom by TSVZMM. The PbI₂ single crystal was successfully grown with the size of Φ15 mm×15 mm, an infrared transmittance of more than 40%, a resistivity of 2×10¹² Ω cm magnitude and stoichiometry close to its theoretical value.     

Czochralski growth and characterization of Dy: La3Ga5.5Nb0.5O14 single crystals

Dysprosium (Dy) doped La₃Ga_5.5Nb_0.5O₁₄ single crystals were grown by the traditional Czochralski method along z‐axis. The structure of the crystal has been studied by X‐ray powder diffraction method, and the unit‐cell parameters are calculated to be a=8.22070 Å, c=5.12533 Å and V=299.965 ų. The segregation coefficient of Dy³⁺ in La₃Ga_5.5Nb_0.5O₁₄ crystal was measured by X‐ray fluorescence analysis. For 1 mol% doping level in the melt, the distribution coefficient of Dy³⁺ was determined to be 0.341 wt%. Specific heat, thermal expansion and transmission spectrum of Dy: La₃Ga_5.5Nb_0.5O₁₄ single crystals have been measured. The fluorescence spectra of Dy³⁺: La₃Ga_5.5Nb_0.5O₁₄ crystals were measured at room temperature, and there were four emission transitions occurring at 479, 576, 662 and 754 nm, respectively. The fluorescent lifetimes measurement results show 1.0% Dy: La₃Ga_5.5Nb_0.5O₁₄ possesses shorter fluorescence decay time (303.4 μs) than does 1.0%Dy:LGS (436.12 μs). (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod

Gallium- and antimony-doped Ge_{1 ? x} Si _x crystals (0 ≤ x ≤ 0.25) have been grown by the improved Bridgman method using a silicon seed and a macrohomogeneous feeding Ge-Si rod of the corresponding composition. The impurity concentration profiles along the grown crystals were determined from Hall measurements. The mathematical problem of impurity distribution along two-component mixed crystals grown from a melt with uniform and graded composition is solved in the Pfann approximation and within the virtual-crystal model for the solid solution. It is shown that the experimental impurity distributions in Ge_{1 ? x} Si _x crystals are described well by the data calculated on the assumption of linear change in the impurity segregation coefficient with the crystal composition.     

声表面波用压电晶体的新进展

报道了我们在Li2B4O7、Sr3Ga2Ge4O14、LiNbO3、LiTaO3等声表面波用压电晶体材料方面的最新研究进展.采用改进型坩埚下降法成功生长了直径3～4英寸的Li2B4O7晶体,并实现了批量生产.作为硅酸镓镧系列新型压电晶体之一,Sr3Ga2Ge4O14晶体具有最大的压电系数.报道了直径2英寸Sr3Ga2Ge4O14晶体的生长结果,测试了该晶体的压电性能.在CO2(90;)、H2(10;)混合气氛中,分别在700℃和450℃下对LN和LT晶片进行化学还原处理,成功制备了3英寸LN和LT低静电黑片,不仅减少了器件制作工序,而且使成品率提高了5～8百分点.此外,在密封坩埚中生长了低静电LiNbO3晶体,观察到一些新的现象.     

Growth and characterization of a new langasite‐type single crystal Sr3NbAl1.5Ga1.5Si2O14

Single crystals of Sr₃NbAl_1.5Ga_1.5Si₂O₁₄ (SNAGS) with langasite structure have been successfully grown by Czochralski method. The X‐ray diffraction (XRD) verified that the as‐grown crystal was isostructural with A₃BC₃D₂O₁₄ structure and the lattice parameters were calculated as follows: a = 8.242 Å, c = 5.041 Å, V = 296.6 ų. The piezoelectric coefficient d₁₁ was 5.7pC/N, which was 2.47 times of α‐quartz (d₁₁=2.31pC/N). The electric resistivity was up to 3.04×10⁶ Ωcm at 700 °C for X‐cut sample. In addition, the transmission spectrum of the SNAGS crystal showed that it had a high transmittance (>80%) in the range of 350‐800 nm and exceeded 90% above 520 nm. These results suggest that the SNAGS crystals have potential applications in high‐temperature piezoelectric sensors and optical techniques. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Study on rapid growth of KH2PO4 and its characterization

Large size crystals of KH₂PO₄ (KDP) were grown by adopting rapid growth technique from point seeds in a 1500‐liter crystallizer which is used to grow KDP crystals by conventional method. The grown KDP crystal size can reach to 310 × 310 × 320 mm³ and the average growth rate was 8mm/day. The optic properties of the rapidly grown KDP crystals were characterized comparing with the KDP crystals grown by the traditional temperature reduction method. We found it that the optical quality of the KDP crystals we grown rapidly are not significantly different from those of KDP crystals grown by traditional method. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Investigation on defects in Lu2SiO5:Ce crystals grown by Czochralski method

Cerium‐doped lutetium oxyorthosilicate crystals (Lu₂SiO₅:Ce) with dimension of ∅︁50 × 60 mm were grown by Czochralski method from an inductively heated iridium crucible. The vaporized substance during growth was examined with XRD and proved to be SiO₂. The vertical and the screw strips existing on the surface of the boule were observed with optical microscope and tested with electron microprobe. They are confirmed to be iridium from the crucible and harmful to the crystal growth. The cleavage orientation of LSO was proved to be (110) and it is one of factors to cause crystal cracking. The scattering particles in LSO crystals are analyzed to be mainly composed of Lu₂O₃ inclusions. Two possible origins on these inclusions are proposed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Enantiomorphism of the Ca3Ga2Ge4O14 compound and comparison of the Ca3Ga2Ge4O14 and Sr3Ga2Ge4O14 structures

The absolute crystal structures of two enantiomorphic forms of the Ca₃Ga₂Ge₄O₁₄ crystals (a = 8.075(1) ?, c = 4.9723(6) ?, space group P321) with the positive and negative senses of the optical activity are determined using X-ray diffraction analysis. The final R factors are as follows: R = 1.75% and R _w = 2.57% for the crystal with the positive sense of the optical activity and R = 1.86% and R _w = 2.78% for the crystal with the negative sense of the optical activity. The replacement of the Ca²⁺ ions by larger Sr²⁺ ions (with the formation of the Sr₃Ga₂Ge₄O₁₄ compound) leads to an anisotropic expansion of the crystal lattice (with a more considerable increase in the lattice parameter a as compared to the lattice parameter c), a change in the occupation of the 1a and 3f positions by the Ga³⁺ and Ge⁴⁺ ions, and symmetrization of the octahedra and tetrahedra forming the structural framework. The shape of the dodecahedron changes so that its size along the polar electric axis 2 increases significantly. This change is the main factor responsible for the increase in the piezoelectric activity of the Sr₃Ga₂Ge₄O₁₄ compound as compared to the piezoelectric activity of the Ca₃Ga₂Ge₄O₁₄ compound. Original Russian Text ? B.V. Mill, A.A. Klimenkova, B.A. Maximov, V.N. Molchanov, D.Yu. Pushcharovsky, 2007, published in Kristallografiya, 2007, Vol. 52, No. 5, pp. 816–823.     

Vertical Bridgman growth and characterization of large ZnGeP2 single crystals

The growth of ZnGeP₂ crystals by seeded Vertical Bridgman method was studied. High-quality near-stoichiometric ZnGeP₂ single crystals obtained were of 20–30 mm in diameter and 90–120 mm in length. By selection of the seed crystallographic orientation the single crystal ingots without cracks and twins were grown, as shown by X-ray diffraction. The infrared transmission property of the ZnGeP₂ crystals was studied by the calculated optical absorption coefficient spectra. The results showed that after thermal annealing of the crystals the optical absorption coefficient was ～0.10 cm^?1 at 2.05 μm, and ～0.01 cm^?1 at 3–8 μm. The rocking curves patterns of the (4 0 0) reflection demonstrated that the as-grown single crystals possessed a good structural quality. The composition of the crystals was close to the ideal stoichiometry ratio of 1:1:2. The low-loss typical ZnGeP₂ samples of 6 mm×6 mm×15 mm in sizes were cut from the annealed ingots for optical parametric oscillation experiments. The output power of 3.2 W was obtained at 3–5 μm when the incident pumping power of 2.05 μm laser was 9.4 W, and the corresponding slope efficiency and the conversion efficiency were 44% and 34%, respectively.     

Crystal Growth and Differential Thermal Analysis of AgGaSe2

High quality AgGaSe₂ single crystals with 20 mm in diameter and 55 mm in length have been grown by Bridgman technique. It is found that there is a second phase of Ag-rich Ga₂Se₃ (or named AgGa₇Se₁₁) in the AgGaSe₂ crystal. It is concluded by discussions with the DTA results and the phase diagram that single crystals grown from polycrystalline materials with stoichiometric composition must contain a second phase of Ag-rich Ga₂Se₃. This result is helpful for the heat treatment, in which what and how much is added and what temperature is chosen for the heat treatment, are very important.     

Growth and characterization of KBi(WO4)2 single crystals

Potassium bismuth tungstate [KBi(WO₄)₂] single crystals with dimensions up to 20 mm × 15 mm × 15 mm have been successfully grown by using the top‐seeded solution growth technique and K₂W₂O₇ as solvent. Experiments show that this crystal is unstable in a strong acid or alkali environment and has a blue fluorescence emission. The density, hardness, melting point, absorption edge, transparency range, prominent Raman shift frequency are 7.57 g/cm³, 238 kg/mm², 800 °C, 380 nm, 400–5450 nm, 868 cm^–1 respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)