A Gaussian-3 theoretical study of small silicon-lithium clusters: electronic structures and electron affinities of SinLi(-) (n = 2-8)

The molecular structures of neutral Si n Li ( n = 2-8) species and their anions have been studied by means of the higher level of the Gaussian-3 (G3) techniques. The lowest energy structures of these clusters have been reported. The ground-state structures of neutral clusters are "attaching structures", in which the Li atom is bound to Si n clusters. The ground-state geometries of anions, however, are "substitutional structures", which is derived from Si n+1 by replacing a Si atom with a Li (-). The electron affinities of Si n Li and Si n have been presented. The theoretical electron affinities of Si n are in good agreement with the experiment data. The reliable electron affinities of Si n Li are predicted to be 1.87 eV for Si 2Li, 2.06 eV for Si 3Li, 2.01 eV for Si 4Li, 2.61 eV for Si 5Li, 2.36 eV for Si 6Li, 2.21 eV for Si 7Li, and 3.18 eV for Si 8Li. The dissociation energies of Li atom from the lowest energy structures of Si n Li and Si atom from Si n clusters have also been estimated respectively to examine relative stabilities.     

Characterization of the interface dipole at the paraphenylenediamine-nickel interface: a joint theoretical and experimental study

In organic-based (opto)electronic devices, charge injection into conjugated materials is governed to a large extent by the metal-organic interface dipole. Controlling the injection of charges requires a better understanding of the fundamental origin of the interface dipole. In this context, photoelectron spectroscopies and density functional theory calculations are used to investigate the interaction between para-phenylenediamine (PPDA), an electron donor, and a polycrystalline nickel surface. The interface dipole formed upon chemisorption of one PPDA monolayer strongly modifies the work function of the nickel surface from 5.10 to 3.55 eV. The work function decrease of 1.55 eV is explained by the electron-donor character of PPDA and the modification of the electronic density at the metal surface. PPDA monolayers are composed of tilted molecules interacting via the nitrogen lone-pair and PPDA molecules chemisorbed parallel to the surface via their pi-electron density. Annealing the monolayer leads to dehydrogenation of PPDA activated by the nickel surface, as found for other amines.     

Si-C(N) sigma linkages and N --> Si dative bonding at pyridine/Si(111)-7 x 7

We experimentally demonstrated that pyridine/Si(111)-7 x 7 can act as an electron donor/acceptor pair as a result of the charge transfer from the electron-rich N atom of pyridine to the electron-deficient adatom of the Si surface, evidenced by the upshift of 1.8 eV (state A) for the N(1s) core level upon the formation of a datively bonded complex compared to physisorbed molecules. Another state (B) whose N(1s) binding energy downshifts by 1.2 eV was assigned to an adduct through Si-C and Si-N covalent linkages, formed via a [4 + 2]-like addition mechanism on Si(111)-7 x 7. Binding molecules through the formation of the dative bond resulted from significant electron transfer opens a new approach for the creation of Si-based molecular architectures and modification of semiconductor interfacial properties with unsaturated organic molecules.     

In situ x-ray photoelectron spectroscopic and density-functional studies of Si atoms adsorbed on a C60 film

The interaction between C(60) and Si atoms has been investigated for Si atoms adsorbed on a C(60) film using in situ x-ray photoelectron spectroscopy (XPS) and density-functional (DFT) calculations. Analysis of the Si 2p core peak identified three kinds of Si atoms adsorbed on the film: silicon suboxides (SiO(x)), bulk Si crystal, and silicon atoms bound to C(60). Based on the atomic percent ratio of silicon to carbon, we estimated that there was approximately one Si atom bound to each C(60) molecule. The Si 2p peak due to the Si-C(60) interaction demonstrated that a charge transfer from the Si atom to the C(60) molecule takes place at room temperature, which is much lower than the temperature of 670 K at which the charge transfer was observed for C(60) adsorbed on Si(001) and (111) clean surfaces [Sakamoto et al., Phys. Rev. B 60, 2579 (1999)]. The number of electrons transferred between the C(60) molecule and Si atom was estimated to be 0.59 based on XPS results, which is in good agreement with the DFT result of 0.63 for a C(60)Si with C(2v) symmetry used as a model cluster. Furthermore, the shift in binding energy of both the Si 2p and C 1s core peaks before and after Si-atom deposition was experimentally obtained to be +2.0 and -0.4 eV, respectively. The C(60)Si model cluster provides the shift of +2.13 eV for the Si 2p core peak and of -0.28 eV for the C 1s core peak, which are well corresponding to those experimental results. The covalency of the Si-C(60) interaction was also discussed in terms of Mulliken overlap population between them.     

Si extraction from silica in a basic polychalcogenide flux. Stabilization of Ba4SiSb2Se11, a novel mixed selenosilicate/selenoantimonate with a polar structure

An unusual compound, Ba4SiSb2Se11, was discovered from a reaction of Ba/Th/Sb/Se. It is assumed that Si was extracted from the silica reaction tube. It forms as silver needlelike crystals in the polar space group Cmc2(1) with a = 9.3981(3) A, b = 25.7192(7) A, c = 8.7748(3) A, and Z = 4. A rational synthesis has been devised at 600 degrees C. The compound is composed of Ba2+ ions stabilized between infinite one-dimensional [SiSb2Se11]8- chains running parallel to the a axis. Each chain is composed of a [SbSe2]- infinity backbone with [SiSe4]4- tetrahedra chelating every other Sb atom from the same side of the backbone. The V-shaped triselenide groups, (Se3)2-, are attached to the rest of the Sb atoms in the chain through one of their terminal Se atoms. The compound has a band gap of 1.43 eV. The Raman spectrum shows a broad shift at 247 cm-1 and a shoulder around 234 cm-1, which are related to the Se-Se vibration of the triselenide groups and/or the Si-Se vibrations of the [SiSe4]4- groups. The compound decomposes at 522 degrees C.     

Photon-stimulated desorption of F(-) ions from CF(3)Cl adsorbed on Si(111)-7x7

We report the photon-stimulated desorption of negative ions induced by direct dipolar dissociation and dissociative electron attachment. The photon-stimulated desorption of F(-) ions from CF(3)Cl physisorbed on a Si(111)-7x7 surface at 30 K in the photon energy range 12-35 eV was studied. The F(-) ion yield exhibits four resonances, at 12.8, 16.2, 19.5, and 22.3 eV, quite unlike the gas phase photodissociation cross section. The intensities of these resonances depend strongly on the CF(3)Cl coverage in a manner which varies from peak to peak. The resonances at 19.5 and 22.3 eV, which have a significant enhancement in the monolayer regime, are due to electron mediated dipolar dissociation of adsorbed CF(3)Cl molecules. The enhancement is attributed to surface electron attachment following molecular excitation. A significant enhancement in the monolayer regime has also been observed for the resonances at 12.8 and 16.2 eV. These two resonances are ascribable to a combination of electron mediated dipolar dissociation and dissociative electron attachment driven by photoelectrons generated in the neighboring molecules.     

Density functional theory study of the geometry, energetics, and reconstruction process of Si111 surfaces

We report the structures and energies from first principles density functional calculations of 12 different reconstructed (111) surfaces of silicon, including the 3x3 to 9x9 dimer-adatom-stacking fault (DAS) structures. These calculations used the Perdew-Burke-Ernzerhof generalized gradient approximation of density functional theory and Gaussian basis functions. We considered fully periodic slabs of various thicknesses. We find that the most stable surface is the DAS 7x7 structure, with a surface energy of 1.044 eV/1x1 cell (1310 dyn/cm). To analyze the origins of the stability of these systems and to predict energetics for more complex, less-ordered systems, we develop a model in which the surface energy is partitioned into contributions from seven different types of atom environments. This analysis is used to predict the surface energy of larger DAS structures (including their asymptotic behavior for very large unit cells) and to study the energetics of the sequential size change (SSC) model proposed by Shimada and Tochihara for the observed dynamical reconstruction of the Si(111) 1x1 structure. We obtain an energy barrier at the 2x2 cell size and confirm that the 7x7 regular stage of the SSC model (corresponding to the DAS 7x7 reconstruction) provides the highest energy reduction per unit cell with respect to the unreconstructed Si111 1x1 surface.     

Removal Mechanism Investigation of Ultraviolet Induced Nanoparticle Colloid Jet Machining

Ultraviolet induced nanoparticle colloid jet machining is a new ultra-precision machining technology utilizing the reaction between nanoparticles and the surface of the workpiece to achieve sub-nanometer ultra-smooth surface manufacturing without damage. First-principles calculations based on the density functional theory (DFT) were carried out to study the atomic material removal mechanism of nanoparticle colloid jet machining and a series of impacting and polishing experiments were conducted to verify the mechanism. New chemical bonds of Ti-O-Si were generated through the chemical adsorption between the surface adsorbed hydroxyl groups of the TiO₂ cluster and the Si surface with the adsorption energy of at least −4.360 eV. The two Si-Si back bonds were broken preferentially and the Si atom was removed in the separation process of TiO₂ cluster from the Si surface realizing the atomic material removal. A layer of adsorbed TiO₂ nanoparticles was detected on the Si surface after 3 min of fixed-point injection of an ultraviolet induced nanoparticle colloid jet. X-ray photoelectron spectroscopy results indicated that Ti-O-Si bonds were formed between TiO₂ nanoparticles and Si surface corresponding to the calculation result. An ultra-smooth Si workpiece with a roughness of Rq 0.791 nm was obtained by ultraviolet induced nanoparticle colloid jet machining.     

Self-directed growth of benzonitrile line on H-terminated Si(001) surface

Using first-principles density-functional calculations we predict a self-directed growth of benzonitrile molecular line on a H-terminated Si(001) surface. The C[triple bond]N bond of benzonitrile reacts with a single Si dangling bond which can be generated by the removal of a H atom, forming one Si-N bond and one C radical. Subsequently, the produced C radical can be stabilized by abstracting a H atom from a neighboring Si dimer, creating another H-empty site. This H-abstraction process whose activation barrier is 0.65 eV sets off a chain reaction to grow one-dimensional benzonitrile line along the Si dimer row. Our calculated energy profile for formation of the benzonitrile line shows its relatively easier formation compared with previously reported styrene and vinylferrocene lines.     

Electron Capture Dissociation of Disulfide, Sulfur–Selenium, and Diselenide Bound Peptides

To examine the electron capture dissociation (ECD) behavior of disulfide (S?CS), sulfur?Cselenium (S?CSe), and diselenide (Se?CSe) bonds-containing peptides, a series of free cysteine (Cys) and selenocysteine (Sec) containing peptides were reacted to form interchain S?CS, S?CSe, and Se?CSe bonds, and then studied using ECD with Fourier transform ion cyclotron mass spectrometry (FTICR MS). These results demonstrate that the radical has higher tendency to stay at selenium rather than sulfur after the cleavage of Se?CS bonds by ECD. In addition, ?CSH (?C33), ?CS (?C32), and ?CS + H (?C31) small neutral losses were all observed from the cleavage of C?CS bonds of a disulfide bound peptide. Similar, but minor, fragments were also detected in S?CSe bound peptides. In contrast, the cleavage of C?CSe bonds of the Se?CSe species mainly forms fragments with neutral loss of ?CSe + H (?C78.90868), and the radical tends to stay on the selenium of its corresponding complementary pair. Although the electron affinities of S atom (2.07?eV) and Se atom (2.02?eV) are very close; they have very different reactivity towards electrons. The replacement of sulfur with selenium greatly increases the electron affinities of S?CSe and Se?CSe bonds comparing to S?CS bonds (with an increase of electron affinity by about 0.20?eV by replacing a sulfur with a selenium) (Int J Quantum Chem 110:513-523, 2010), which in turn leads to different ECD fragmentation behavior and mechanisms. Our results are in good agreement with previously published ab initio calculations on Se?CSe compounds by other groups.     

Electron attachment to dye-sensitized solar cell components: cyanoacetic acid

The energies of electron attachment associated with temporary occupation of the lower-lying virtual orbitals of cyanoacetic acid (CAA), proposed as a possible component of dye-sensitized solar cells, and its derivative methyl cyanoacetate (MCA) are measured in the gas phase with electron transmission spectroscopy (ETS). The corresponding orbital energies of the neutral molecule, supplied by B3LYP/6-31G(d) calculations and scaled using an empirically calibrated linear equation, are compared with the experimental vertical attachment energies (VAEs). The vertical and adiabatic electron affinities are also evaluated at the B3LYP/6-31+G(d) level as the anion/neutral total energy difference. Dissociative electron attachment spectroscopy (DEAS) is used to measure the total anion current as a function of the incident electron energy in the 0-4 eV energy range, and the negative fragments generated through the dissociative decay channels of the molecular anion are detected with a mass filter. In both compounds only two intense fragment anion currents are observed, that due to loss of a hydrogen atom from the molecular anion ([M - H](-)) and that due to formation of CN(-). In CAA the former signal displays a very sharp feature at 0.68 eV, assigned to a vibrational Feshbach resonance arising from coupling between a dipole bound anion state and a temporary σ* anion state.     

Selective formation of cumulative double bonds (C[double bond]C[double bond]N) in the attachment of multifunctional molecules on Si(111)-7 x 7

The cumulative double bond (C[double bond]C[double bond]N), an important intermediate in synthetic organic chemistry, was successfully prepared via the selective attachment of acrylonitrile to Si(111)-7 x 7. The covalent binding of acrylonitrile on Si(111)-7 x 7 was studied using high-resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning tunneling microscopy (STM) and DFT calculations. The observation of the characteristic vibrational modes and electronic structures of the C[double bond]C[double bond]N group in the surface species demonstrates the [4 + 2]-like cycloaddition occurring between the terminal C and N atoms of acrylonitrile and the neighboring adatom-rest atom pair, consistent with the prediction of DFT calculations. STM studies further show the preferential binding of acrylonitrile on the center adatom sites of faulted halves of Si(111)-7 x 7 unit cells.     

Ab initio calculations for the Zn 2s and 2p core level binding energies in Zn oxo compounds and ZnO

The Zn 2s and 2p core level binding energies of ZnO and a few Zn oxo compounds containing Zn in its oxidation state +2 were calculated by means of wave function based quantum chemical ab initio methods. The computations were performed at two levels of approximation. First, Hartree-Fock calculations were carried out for the ground state of the neutral systems yielding the "initial state" effects, i.e. the shifts of the core level binding energies due to the changes in the chemical environment of the Zn atom under consideration (Koopmans' theorem level, KT). In the second step, Hartree-Fock calculations were performed for the core ionized states in order to account for the relaxation effects after ionization, i.e. for the "final state" effects (DeltaSCF level). Scalar relativistic corrections and spin-orbit coupling were included in a "spin-orbit-coupling configuration interaction" (SOC-CI) treatment both at the KT and DeltaSCF levels. In all Zn oxo compounds (Zn(4)O(formate)(6), Zn(4)O(acetate)(6) and several ZnO cubanes) small negative initial state shifts between -1.0 and 0.0 eV (relative to the free Zn atom) were found which are caused by the negative charges at the surrounding O atoms. The relaxation effects vary between -1.0 and -0.5 eV, such that the calculated total shifts are moderately negative (-1.5 to -0.5 eV). Embedded ZnO clusters of increasing size, ranging from Zn(13)O(4) to Zn(69)O(38), were used as models for bulk ZnO, the Zn 2s and 2p core level shifts calculated for these clusters being extrapolated to infinite cluster size. The calculations show that bulk ZnO has a rather large negative initial state shift of -2.1 +/- 0.1 eV, due to the Madelung potential at the Zn atom, and a comparatively small relaxation contribution of -1.0 +/- 0.1 eV. This yields a total shift of -3.1 +/- 0.2 eV (both for 2s and 2p, relative to atomic Zn), which is in very good agreement with experiment, -2.9 +/- 0.2 eV. The surprising experimental observation that the Zn 2s and 2p XPS peak positions are nearly identical in Zn metal and ZnO is explained by the fact that the sum of initial and final state effects is accidentally the same for the two systems though the individual contributions differ quite significantly: the initial and final state shifts amount to +2.4 and -5.1 eV for Zn metal vs.-2.1 and -1.0 eV for ZnO.     

Electronic mechanism of STM-induced diffusion of hydrogen on Si(100)

We have observed a scanning tunneling microscopy (STM) induced lateral transfer of a single hydrogen atom on the Si(100) surface. The transfer rate of the hydrogen atom is proportional to the electron dose, indicating an electron-assisted transfer mechanism. Measurements of the relations between the transfer rate and the sample bias and temperature give further support for an electronic mechanism. The bias dependence of the transfer rate shows a peak, and from a first principles electronic structure calculation we show that the position of the peak is related to the energy of a localized surface resonance. We propose that the hydrogen transfer is related to inelastic hole scattering with this surface resonance. We develop a microscopic model for the hydrogen transfer, and using the experimental data we extract information on the resonance lifetime and the transfer yield per resonant electron. The transfer takes place by tunneling through a small excited state transfer barrier. The transfer rate is increased if the hydrogen atom before the resonant excitation is vibrationally excited, and this gives rise to an increasing transfer rate with increasing sample temperature.     

Probe microscope observation of platinum atoms deposited on the TiO2(110)-(1 x 1) surface

Titanium dioxide (TiO2) (110) surfaces with Pt adatoms were examined using a noncontact atomic force microscope (NC-AFM) and a Kelvin probe force microscope (KPFM). Topographic images with NC-AFM identify Pt atoms adsorbed at three different sites. These sites are on the Ti atom rows, on the O atom rows, and in O atom vacancies. Most Pt adatoms were observed on Ti atom rows. Successively recorded images show that the Pt adatoms on Ti atom rows (adatoms A) and O atom rows (adatoms C) are mobile while the adatoms in the O atom vacancies (adatoms B) are not. Adatoms A and adatoms B were identified in KPFM images. However, adatoms C were not visualized in KPFM images because they moved quickly or were swept out by the tip. The KPFM measurements reveal that the work function on adatoms A are lower than that on the surrounding (1 x 1) surface by 0.24 eV whereas adatoms B reduced the work function by 0.26 eV. The work function decrease is interpreted with an electric dipole moment directed toward the vacuum, as a result of electron transfer from the adatoms to the TiO2 substrate. In an O atom vacancy, the adatom B is in contact with two Ti atoms and therefore the electron transfer can be enhanced.     

Negative ions of nitroethane and its clusters

Valence and dipole-bound negative ions of the nitroethane (NE) molecule and its clusters are studied using photoelectron spectroscopy (PES), Rydberg electron transfer (RET) techniques, and ab initio methods. Valence adiabatic electron affinities (EA(a)s) of NE, C(2)H(5)NO(2), and its clusters, (C(2)H(5)NO(2))(n), n=2-5, are estimated using vibrationally unresolved PES to be 0.3+/-0.2 eV (n=1), 0.9+/-0.2 eV (n=2), 1.5+/-0.2 eV (n=3), 1.9+/-0.2 eV (n=4), and 2.1+/-0.2 eV (n=5). These energies were then used to determine stepwise anion-neutral solvation energies and compared with previous literature values. Vertical detachment energies for (C(2)H(5)NO(2))(n)(-) were also measured to be 0.92+/-0.10 eV (n=1), 1.63+/-0.10 eV (n=2), 2.04+/-0.10 eV (n=3), and 2.3+/-0.1 eV (n=4). RET experiments show that Rydberg electrons can be attached to NE both as dipole-bound and valence bound anion states. The results are similar to those found for nitromethane (NM), where it was argued that the diffuse dipole state act as a "doorway state" to the more tightly bound valence anion. Using previous models for relating the maximum in the RET dependence of the Rydberg effective principle number n(max)(*), the dipole-bound electron affinity is predicted to be approximately 25 meV. However, a close examination of the RET cross section data for NE and a re-examination of such data for NM finds a much broader dependence on n(*) than is seen for RET in conventional dipole bound states and, more importantly, a pronounced [l] dependence is found in n(max)(*) (n(max)(*) increases with [l]). Ab initio calculations agree well with the experimental results apart from the vertical electron affinity value associated with the dipole bound state which is predicted to be 8 meV. Moreover, the calculations help to visualize the dramatic difference in the distributions of the excess electron for dipole-bound and valence states, and suggest that NE clusters form only anions where the excess electron localizes on a single monomer.     

H atom adsorption and diffusion on Si(110)-(1×1) and (2×1) surfaces

We present a periodic density-functional study of hydrogen adsorption and diffusion on the Si(110)-(1×1) and (2×1) surfaces, and identify a local reconstruction that stabilizes the clean Si(110)-(1×1) by 0.51 eV. Hydrogen saturates the dangling bonds of surface Si atoms on both reconstructions and the different structures can be identified from their simulated scanning tunneling microscopy/current image tunneling spectroscopy (STM/CITS) images. Hydrogen diffusion on both reconstructions will proceed preferentially along zigzag rows, in between two adjacent rows. The mobility of the hydrogen atom is higher on the (2×1) reconstruction. Diffusion of a hydrogen vacancy on a monohydride Si(110) surface will proceed along one zigzag row and is slightly more difficult (0.2 eV and 0.6 eV on (1×1) and (2×1), respectively) than hydrogen atom diffusion on the clean surface.     

聚乙酰亚胺涂敷单晶硅表面上全氟亏酸单层膜

Ultra-thin film of perfluorodecanoic acid expected to be excellent lubricant for micro-machines was prepared successfully on single crystal silicon substrate.The film was characterized by means of X-ray photoelectron spectroscopy (XPS) and contact-angle meter.The chemical reaction involved in the preparation of the ultra-thin film was discussed as well.After being immersed in a dilute aqueous solution of polyethyleneimine (PEI) for 15 minutes and rinsed with distilled water,the silicon substrate was coated with a thin film of PEI,which was then put into a dilute solution (1× 10－ 3 mol· L－ 1) of perfluorodecanoic acid in hexadecane.Subsequently the steady perfluorodecanoic acid ultra-thin film was developed on PEI coating in the presence of a covalent amide bond between carboxylic group and the primary or secondary amine groups of PEI.This process was accompanied by the contact angle changes of water droplet on the Si surface (see Table 1).Moreover,the reaction between perfluorodecanoic acid and PEI was significantly influenced by N,N′ -dicyclohexylcarbodiimide (DCCD).The contact angle on the ultra-thin film of perfluorodecanoic acid is only 66.3° in the absence of DCCD in the reacting solution; it rises to 89.4° in the presence of DCCD.This indicates that the reaction between perfluorodecanoic acid and PEI was accelerated by DCCD,and the quality of perfluorodecanoic acid ultra-thin film thus improved.XPS analysis of the ultra-thin film indicates that the derivatization of PEI with perfluorodecanoic acid was accompanied by several changes.First,a large and highly symmetrical F 1s peak appeared at 688.3 eV (C－ F*).Secondly,a new peak of N 1s appeared at 400.7 eV (chemical shift 1.4 eV),which was attributed to the N atom attached to the carbonyl group (O=C－ N*).Thirdly,three new peaks of C 1s appeared at 286.1 eV (chemical shift 1.5 eV),288.1 eV (chemical shift 3.5 eV),and 291.0 eV (chemical shift 5.4 eV),respectively.These C 1s peaks were attributed to the C atom attached to the O=C－ N group (O=C－ N－ C*),the carboxyl C atom (O=C*－ N),and the C atom in － CF3 group (C*－ F),respectively.Therefore it can be concluded that perfluorodecanoic acid has been chemically adsorbed onto the surface of PEI and perfluorodecanoic acid ultra-thin film prepared successfully.     

Facet-dependent lithium intercalation into Si crystals: Si(100) vs. Si(111)

Fast Li transport in battery electrodes is essential to meeting the demanding requirements for a high-rate capability anode. We studied the intercalation of a Li atom into the surface and subsurface layers of Si(100) and Si(111) using density functional calculations with a slab representation of the surfaces. We suggest that the Li atom migrates on the Si surfaces and is subsequently inserted into the inside for both Si(100) and Si(111). The rate-determining steps are the surface incorporation and subsurface diffusion in Si(100) and Si(111), respectively. Our diffusion rate calculations reveal that, once the Li atom is incorporated into the Si surface, Li diffuses faster by at least two orders of magnitude along the <100> direction than along the <111> direction. The importance of careful treatment of the slab thickness for the study of impurity insertion into subsurface layers is also stressed.     

Formation of molecular templates containing cumulative double bonds (C=C=C) at organic/silicon hybrid interfaces

The cumulative double bond (C=C=C), an important intermediate in synthetic organic chemistry, was successfully prepared via the selective attachment of acetylethyne to Si(111)-7 x 7. The experimental observation of the characteristic vibrational modes and electronic structures of the C=C=C group in the surface species demonstrates the [4 + 2]-like cycloaddition occurring between the terminal O and C atoms of acetylethyne and the neighboring Si adatom-rest atom pair, consistent with the prediction of density functional theory calculations. Scanning tunneling microscopy images further reveal that the molecules selectively bind to the adjacent adatom-rest atom pairs on Si(111)-7 x 7.