添加稳定剂对反应烧结法合成铁铝尖晶石的影响

以工业氧化铝、氧化铁为原料,石墨为还原剂,高纯镁砂、电熔镁铝尖晶石为Fe2+的稳定剂;按照FeO: Al2O3:C =41.0:59.0:3.0的质量比设计基础配方,在合成体系中分别外加适量的高纯镁砂及镁铝尖晶石;各种原料经过共磨等工序加工后,压制成φ50 mm×50 mm试样,并在非控制气氛下于高温电炉1550℃,5h烧结合成.采用XRD、SEM及EDS等手段对试样进行表征,结果表明:非控制气氛下反应烧结法制备铁铝尖晶石时,引入高纯镁砂与镁铝尖晶石做为稳定剂均能促进Fe2+的稳定及铁铝尖晶石的合成.以高纯镁砂为稳定剂,制备的铁铝尖晶石晶体结构中镁含量相对较高,晶格参数与理论值相差较大,合成产物中还存有少量镁铝尖晶石相及单质铁;以电熔镁铝尖晶石为稳定剂,制备的铁铝尖晶石晶体结构中镁含量相对较低,晶体发育完善,晶格常数更接近理论值,合成产物中存在纯净铁铝尖晶石相.     

电熔镁铝尖晶石和轻烧镁粉对合成镁铁铝系复合尖晶石的影响

本文研究电熔镁铝尖晶石和轻烧镁粉对合成镁铁铝复合尖晶石的影响.电熔镁铝尖晶石和轻烧镁粉分别与氢氧化铁、活性氧化铝混合均匀制得φ20 mm×10 mm的试样,在空气气氛烧结条件下,于1550℃×6 h高温烧成.采用XRD、SEM和EDS等手段对烧后试样的物相组成和显微结构进行表征.结果表明:加入电熔镁铝尖晶石的试样中存在刚玉相、赤铁矿、铁铝尖晶石相和镁铁铝复合尖晶石相四种矿物相,镁铁铝复合尖晶石的化学式为Mg796Al15.31Fe0.68O32;加入轻烧镁粉的试样中存在刚玉相、铁铝尖晶石相和镁铁铝复合尖晶石相三种矿物相,镁铁铝复合尖晶石的化学式为Al15.71Mg3.35Fe4.94O32;加入电熔镁铝尖晶石的试样中铁铝尖晶石的晶粒尺寸和镁铁铝复合尖晶石相差无几,加入轻烧镁粉的试样中铁铝尖晶石的晶粒尺寸明显大于镁铁铝复合尖晶石.     

添加剂促进锌铝尖晶石生成机理研究

以氧化铝和氧化锌为原料,采用固相反应法合成锌铝尖晶石,将试样在800～1500℃进行烧结,研究了添加剂对矿物组成和微观结构的影响,采用XRD、SEM和EDS等手段对烧后试样的物相组成和显微结构进行表征.结果表明:在800℃时,空白样的主晶相为氧化锌,次晶相为锌铝尖晶石,添加ZrO2的试样主晶相为锌铝尖晶石,次晶相为氧化锌和氧化锆,添加TiO2的试样,主晶相为锌铝尖晶石,次晶相为钛酸锌,两种添加剂均有促进锌铝尖晶石生成的作用,添加TiO2和ZrO2的试样晶粒尺寸均比空白样大;1500℃时,氧化钛与氧化铝反应生成钛酸铝,当TiO2含量在1;～5;之间时,随着TiO2含量增加,锌铝尖晶石晶粒尺寸增大.     

非水解和水解溶胶-凝胶法合成MgAl2O4粉体对比研究

分别采用非水解和水解溶胶-凝胶法制备MgAl2O4粉体,利用DTA-TG、XRD和FE-SEM等研究了凝胶煅烧过程中的相变化、粉体形貌及其烧结性能.研究表明,水解凝胶经900℃煅烧0.5h后可形成大量镁铝尖晶石晶相,但仍有少量的方镁石相存在,非水解凝胶经900℃煅烧0.5h后只有镁铝尖晶石晶相.采用水解和非水解法所合成MgAl2O4粉体的平均粒径分别为90nm和50 nm,其经1600℃烧结3h后晶粒尺寸分别为1～2 μm和0.5 ～1μm,晶粒多呈八面体形状,相比之下,采用水解法时MgAl2O4晶体发育较好,出现了明显的生长台阶.     

不同氧化铝源对合成铁铝尖晶石的影响

以工业氧化铝、α-氧化铝微粉、电熔白刚玉作为氧化铝源,分别与氧化铁、鳞片状石墨和烧结镁铝尖晶石按照相同比例配料、混合、压制成型及干燥,在空气气氛条件下,通过高温烧结合成铁铝尖晶石试样.利用XRD和SEM分别对三种氧化铝源合成试样的物相组成和显微结构进行表征.结果表明:以工业氧化铝为氧化铝源合成的试样,铁铝尖晶石合成率高、晶体发育好、晶格常数接近理论值0.8148 nm.     

固体废弃物铝灰和粉煤灰原位合成Spinel-Sialon复相材料的研究

本文利用铝灰和粉煤灰为原料,经原位铝热还原氮化法合成了Spinel-Sialon复相材料。通过XRD、SEM、EDS等分析手段,研究了合成温度和还原剂铝的添加量对合成产物物相及微观形貌的影响。结果表明:合成Spinel-Sialon的优化工艺参数为铝的添加量为过量100%、合成温度为1550℃,保温时间3 h,合成得到发育良好的柱状β-Sialon及八面体形的镁铝尖晶石。合成温度、还原剂铝的添加量均是影响氮化产物的重要因素。随着温度的升高或还原剂铝的添加量增多,Al2O3越来越少,β-Sialon和镁铝尖晶石均增多,且β-Sialon的Z值增大,MgAl2O4转变成富铝尖晶石。     

TiO2含量对铁铝尖晶石晶体结构影响的研究

以分析纯氧化铁、氧化铝和二氧化钛为原料,按FeO∶Al2O3质量比为40.8∶59.2配料,并于合成体系中分别引入质量分数为0、1;、3;和5;的二氧化钛.在保护气氛(CO2/CO)下于1550℃煅烧4h合成铁铝尖晶石.用X射线衍射、扫描电子显微镜和能谱对烧后试样进行分析.结果表明:在铁铝尖晶石合成过程中,引入的TiO2参与了铁铝尖晶石的结晶、长大;添加TiO2的铁铝尖晶石衍射峰向小角度偏移,晶格常数增大.TiO2加入量小于1;时,各试样的微观结构都比较均匀,引入的TiO2进入了铁铝尖晶石的晶格,且以复合尖晶石的形式存在;TiO2添加量大于3;时,烧后试样的结晶形貌发生明显变化,铁铝尖晶石发生分解.     

四种镁铁铝材料的物相组成与显微结构表征

分别以烧结铁铝尖晶石、电熔铁铝尖晶石、烧结镁铁砂及电熔镁铁砂为铁载体,在控制试样化学组成接近的前提下,按照镁铁铝尖晶石砖生产工艺制备镁铁铝尖晶石砖试样.采用XRD和SEM对试样的物相组成和显微组织结构进行分析表征.结果表明:铁铝尖晶石试样中,存在(Mg,Fe2+)Al2O4复合相,其中铁以Fe2+的形式存在,并产生少量镁铁尖晶石脱溶物;镁铁砂试样中,形成Mg(Fe3+,Al)2O4复合相,铁以Fe3+的形式存在,并产生了AlFe2O4连续固溶体相;烧结铁载体试样的显微结构中存在较多微气孔,电熔铁载体试样显微组织结构致密.     

BN对镁基含碳耐火材料性能的影响

以电熔镁砂细粉、用后镁碳砖细粉、α-Al2O3微粉和石墨为主要原料,以酚醛树脂为结合剂,以BN微粉为添加剂,经混炼、成型、热处理后制成镁基含碳耐火材料,重点研究了添加剂BN加入量(质量分数分别为0、0.5;、1.0;、1.5;、2.0;和2.5;)及煅烧温度(分别为1250℃、1375℃和1500℃)对烧后试样体积密度、显气孔率、常温耐压强度、烧后线变化率、抗氧化性、显微结构和矿物相组成的影响.结果表明:加入BN以及提高煅烧温度有利于提高烧后镁基含碳耐火材料的烧结性能.BN在高温条件下优先与环境中氧发生反应生成三氧化二硼,并与基质中电熔镁砂及用后镁碳砖中的氧化镁反应生成低熔点相硼酸镁,硼酸镁液相的生成是镁基含碳材料烧结性以及抗氧化性增强的主要原因.烧后试样主晶相为方镁石,次晶相为镁铝尖晶石.     

溶胶-凝胶法制备连续MgAl2O4纤维

采用溶胶-凝胶法,通过聚合氯化铝溶液和柠檬酸镁溶液混合反应获得纤维前驱体纺丝液.前驱体纺丝液经离心甩丝和空气气氛下热处理后制备出直径细小、有一定韧性的连续镁铝尖晶石纤维.采用FT-IR、TG-DTA、XRD、SEM等测试手段对纤维进行表征.结果表明,纤维前驱体在585℃时开始结晶,且除MgAl2O4相外无其他相出现.在空气气氛下,前驱体纤维先以3℃/min加热至600℃,而后以5℃/min加热至1000℃并保温2h,经该热处理后的纤维直径为5～8 μm.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.