Fe3+对KDP晶体生长影响的研究

金属离子对KDP晶体的影响是多方面的.本文采用不同的过饱和度,在不同的Fe3+掺杂浓度的生长溶液中生长KDP晶体,定量地研究了Fe3+对KDP晶体生长的影响.实验发现,无论是在高过饱和度还是在低过饱和度下生长KDP晶体,在一定的浓度范围内,Fe3+的掺入既可以增加生长溶液的稳定性,又可以有效抑制晶体柱面的扩展,而且晶体基本不楔化,同时,对晶体光学性能的影响也不大.     

Na+对KDP晶体生长的影响

本文利用传统的降温法和"点籽晶"快速生长法在不同Na+掺杂浓度的溶液中生长KDP晶体,定量研究了Na+对KDP晶体生长的影响.实验发现:Na+的存在降低了溶液的稳定性,致使KDP晶体柱面容易扩展.Na+的存在对KDP晶体的光学性能基本没有影响.     

KDP晶体的点状籽晶法生长及其缺陷研究

研究了溶液Ph值对KDP晶体生长形态的影响,进行了晶体生长实验和参数对比.以提高溶液Ph值为主要手段在低过饱和度下进行KDP晶体点状生长.对点状法生长的晶体进行了缺陷分析,测定了晶体不同区域的金属离子含量并进行了对比分析.实验表明溶液Ph值对晶体各向的相对生长速度有显著的影响.在Ph=5.0、低过饱和度(σ＜0.02)条件下生长出50×50×50mm3的晶体.     

KDP晶体生长过程中溶液稳定性的研究

在KDP晶体生长过程中,溶液的稳定性对KDP晶体的光学质量影响较大.溶液的稳定性是多种因素共同作用的结果.本文主要研究了过饱和KDP溶液中晶胚的分布情况、降温过程中晶体生长驱动力与降温速度之间的关系,并分析了KDP晶体实际生长过程中影响溶液稳定性的主要因素.我们认为,通过改善KDP晶体生长过程中溶液的稳定性,并与其它措施和技术相结合,是提高KDP晶体光学质量的有效途径.     

KDP晶体中包裹体形成机制的探讨

本文介绍了包裹体对KDP晶体质量的影响,并从两个方面探讨了KDP晶体生长过程中包裹体的形成机制.通过分析KDP晶体表面原子结构研究了不同杂质的吸附情况以及杂质对生长台阶的阻碍作用,通过分析晶体生长过程中流体动力学和质量输运条件的变化研究了旋转晶体的流体切应力和表面过饱和度,结果表明吸附杂质对生长台阶的阻碍和表面过饱和度的不均匀造成了生长台阶的弯曲和宏观台阶的形成,导致生长台阶形貌的不稳定是包裹体形成的重要原因.     

快速生长KDP晶体表面的光学显微实时观察

设计了一套溶液降温法晶体生长显微实时观察装置,对快速生长KDP晶体{101}和{100}表面形貌的演化过程进行了实时观测分析.测量了晶体表面生长层切向生长速度随溶液过饱和度的变化曲线,并利用台阶生长动力学方程计算了相关动力学参数.进行了Fe3+掺杂实验,结果表明Fe3+的存在会影响到不同晶面上生长层的动力学系数,从而改变KDP晶体表面生长层的切向生长速度.     

pH值对KDP晶体溶解度和溶液稳定性的影响

测定了不同pH值(2.0～5.5)生长溶液中KDP晶体(KH2PO4)的溶解度曲线,实验结果表明:随着生长溶液pH值的改变,KDP溶解度明显增大.讨论了KDP晶体溶液pH值、溶液组成和溶液饱和点温度三者之间的关系.进行了高pH值(3.8～5.6)KDP生长溶液的稳定性实验,发现高pH值生长溶液中的临界成核半径rC增大,溶液的稳定性提高.在不同pH值溶液中进行了晶体生长实验,探讨了不同pH值生长溶液中配合物对KDP晶体生长习性的影响.     

有机添加剂对KDP晶体生长及其光学性质影响的研究

本文研究了乙二胺四乙酸(EDTA)和氨三乙酸(ATA)对KDP晶体生长及其光学性质的影响,其中,后者是首次报导,两者表现相似的影响.随着添加剂含量的增大,晶体生长速度先增大后减小;添加添加剂溶液所生长的KDP晶体在紫外波段的透过率提高;研究还发现,270 nm处晶体透过率的主要影响因素包括过饱和度以及Fe3+和Cr3+含量;有机添加剂的添加和退火对电导率影响微弱.     

溶液降温法快速生长KDP晶体的新装置

利用溶液降温法分别在锥形底生长装置和传统晶体生长装置中进行了KDP晶体点状籽晶法快速生长实验,对KDP晶体的生长条件进行了对比,分析了不同生长装置对KDP溶液稳定性的影响,利用扫描电镜观察了KDP晶体中的包裹体,测定了晶体的透过率,对比分析了锥形瓶快速生长装置的优越性.     

旋转半径对KDP晶体生长过程影响的数值模拟研究

相比传统KDP晶体同心旋转的生长方式,本文利用数值模拟的方法,针对不同旋转半径和不同籽晶摆放方式对KDP晶体生长过程中溶液流动和物质输运的影响进行研究,以寻找提高晶体表面过饱和度及其均匀性的方法.计算结果表明:随着旋转半径从0 cm增大到3 cm,晶面时均过饱和度整体也逐渐增大,柱面平均均方差逐渐减小,锥面平均均方差先增大后减小;当晶体摆放方式采用棱边迎流时,晶体表面时均过饱和度相比柱面迎流略有下降,但其平均均方差最小,有利于减少包裹体的产生.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.     

A SAXS study of kinetics of aggregation of silica sols

SAXS in situ experiments on the evolution of TMOS solutions during hydrolysis and polycondensation lead to power laws with scaling exponents ≈ 2. It is suggested that this could be the result of the polydispersity of the samples and that only an apparent fractal dimension can be obtained in this way. Kinetic studies tend to indicate that agglomeration in the sol is the result of a diffusion-controlled process.