Preparation of GaN crystals by heating a Li3N‐added Ga melt in Na vapor and their photoluminescence

GaN crystals were prepared by heating a Ga melt with 1 at% Li₃N against Ga at 750 °C in Na vapor under N₂ pressures of 0.4–1.0 MPa. The GaN crystals grown at 1.0 MPa of N₂ were colorless and transparent prismatic, having a size of approximately 0.7 mm in length. A secondary ion mass spectrometry (SIMS) showed the contaminant of lithium in the obtained crystals. A large broad yellow band emission peak of 2.28 eV was observed at room temperature in the photoluminescence spectrum in addition to the near band emission peak of GaN at 3.39 eV and a small broad satellite emission at 3.24 eV. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth behaviour of bulk GaN single crystals grown with various flux ratios using solvent‐thermal method

Bulk GaN single crystals were grown using a solvent‐thermal method. They were grown for 200 h at 600 °C and 800 °C using 8 MPa of N₂ gas and 1–3 mm sized pyramid GaN single crystals. Pure Na, NaN₃ and Ca were used as the flux. The mole fraction of the [flux]/([flux] + [Ga]) was 0.30–0.67. The growth behavior differed according to the flux ratio. The quality of the bulk GaN single crystals was improved by increasing the flux ratio. The bulk GaN single crystals formed by spontaneous nucleation were deposited on the BN crucible wall and bottom during the first step of synthesis. The wurtzite structure of the GaN grown single crystal was confirmed by x‐ray diffration. The chemical composition was analyzed by electron probe microanalysis. The quality and optical properties of the GaN single crystal were examined by Raman spectroscopy and photoluminesence analysis. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of ZnO single crystals by an induced nucleation from a high temperature solution of the ZnO‐PbF2 system

To grow ZnO single crystals from a high temperature solution of the ZnO‐PbF₂ system, a gas cooling system was assembled at the bottom of the crucible to induce nucleation in the initial growth stage. The growth experiments were carried out in a homemade vertical Bridgman furnace and Pt crucible of 28 mm in diameter was used. The furnace temperature was set to 1100°C and the flow rate of the oxygen gas was optimized as 3.0 l/min. ZnO crystal up to 5∼8mm in the thickness was obtained with the lowering rate of 0.3 mm/h. XRD patterns showed that the as‐grown crystal was pure ZnO Wurtzite phase. The impurity ions were analyzed by the glow discharge mass spectroscopy (GDMS) as 390.0 ppm and 40.0 ppm for Pb²⁺ and F^‐, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of YCOB single crystals by flux technique and their characterization

Nonlinear optical single crystals of YCOB with good optical quality were grown by the flux technique for the first time. Polycrystalline YCOB samples were synthesized by solid state reaction method. The thermal analysis of the sample was performed with lithium carbonate flux in different weight proportions and the growth temperature was optimised. Single crystals of YCOB with dimensions 3 × 3 × 5 mm³ were obtained by the method of ‘slow‐cooling’. The grown crystals were characterized by XRD, UV‐VIS‐NIR, EDAX, FTIR and etching studies. The powder XRD pattern revealed the formation of YCOB compound. The lattice parameters were identified through single crystal XRD studies. The UV‐VIS‐NIR results showed that the crystal has a sharp cutoff at 220 nm and is nearly 55% transparent over a wide wavelength range enabling applications in the UV region. The EDAX measurement revealed the ‘flux‐free’ crystal formation. The presence of the functional groups belonging to the YCOB crystals was identified by the FTIR results. ‘Hillock‐like’ patterns are observed in the etching studies. The primary emphasis in this study is laid to describe ‘flux technique’ as an alternative method to grow YCOB crystals. The results are presented and discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure,dielectric properties of (K0.5Na0.5)NbO3 single crystal grown by flux method using B2O3 flux

Lead free piezoelectric single crystals of sodium potassium niobate (K_0.5Na_0.5)NbO₃ (KNN) were grown by high‐temperature solution method using two different fluxes; one with a mixture of NaF and KF and other with addition of B₂O₃ along with the mixture. In the present study, the growth of KNN crystals without B₂O₃ flux and the same with B₂O₃ flux were compared. It was found that additions of small amounts of B₂O₃ lowered the melting temperature of the solid solution and enabled better dielectric properties. Phase analysis showed that all samples were crystallized in pure orthorhombic perovskite phase. AFM morphological studies showed that the addition of B₂O₃ flux increased the roughness of the grown crystal. Further, addition of B₂O₃ flux slightly decreased the orthorhombic to tetragonal phase transition temperature T_(O—T) and the Curie temperature T_C. The ferroelectric behaviour of KNN single crystal has been investigated at room temperature. The crystal grown using B₂O₃ flux exhibited a remanent polarization (P_r) ∼ 32 μC/cm² and coercive field (Ec) of ∼11.8 kV/cm whereas the crystal grown without the use of B₂O₃ flux had a remanent polarization (P_r) ∼ 36 μC/cm² and coercive field (Ec) of ∼14.6 kV/cm.     

Thermoelectric properties of Tl‐doped Bi2Se3 single crystals

The single crystals of the ternary system based on Bi_2‐xTl_xSe₃ (nominaly x = 0.0‐0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by the measurement of lattice parameters, electrical conductivity σ_⊥c , Hall coefficient R_H (B∥c), and Seebeck coefficient S (ΔT ⊥c). The measurements indicate that by incorporating Tl in Bi₂Se₃ one lowers the concentration of free electrons and enhances their mobility. This effect is explained in terms of the point defects in the crystal lattice – formation of substitutional defects thallium on the site of bismuth Tl_Bi and the decrease of concentration of selenium vacancies V_Se⁺². We also discuss the temperature dependence of the power factor σS² of the samples. Upon the thallium doping we observe a significant increase of the power factor compare to the parental Bi₂Se₃. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

基于钠助熔剂法的GaN单晶生长研究进展

宽禁带氮化镓(GaN)材料以其独特的性质和应用前景成为国内外研究的热点,高质量GaN单晶衬底的制备是获得性能优异的光电子器件和功率器件的基础。钠助熔剂法生长条件温和,易获得高质量、大尺寸的GaN单晶,是一种具有广阔商业化前景的GaN单晶生长方法。钠助熔剂法自20世纪90年代末期被发明以来,经过20多年的发展,钠助熔剂法生长的晶体在尺寸与质量上都取得了长足的进步。本文从晶体生长原理和关键工艺(籽晶选择、温度梯度以及添加剂)等方面综述了钠助熔剂法生长GaN单晶研究进展,并对其面临的挑战和未来发展趋势进行了展望。     

Transport property measurements in tungsten sulphoselenide single crystals grown by a CVT technique

The transport properties of ternary mixed WS_xSe_2‐x single crystals have been studied by measuring the thermo power, electrical conductivities and Hall parameters in a small temperature range 303‐423 K. The electrical conductivity was highest for selenium rich WSe₂ and lowest for sulphur rich WS₂ crystals. All the crystals showed semiconducting behaviour from the temperature dependence of ‘ρ’, ‘R_H’ and ‘S’. The Hall coefficients showed that the samples are p‐type conducting. The temperature dependence of resistivity, Hall coefficients, carrier concentration showed that all of them are thermally activated. The values of activation energies, pre‐exponential factors and the scattering parameters have been determined. The dominant scattering mechanism for the charge carriers has been explained. The relation between the TEP and the concentration of charge carriers and electrical conductivity was studied. The effective masses of holes and the effective density of states have been determined. These parameters show an increase with increase in sulphur content. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Improved growth of PbI2 single crystals

The phase equilibrium and the crystallization process of lead iodide (PbI₂) melt have been primarily investigated according to the lead–iodine phase diagram. It is found that the iodine evaporation and the segregated lead deposition are the two important factors that affect the PbI₂ crystal quality. The new method of Pulling U-type quartz growth ampoule has been made to impede the decomposition of PbI₂ and the vaporization and condensation of iodine. An orange and translucent PbI₂ single crystal of large size was obtained by the improved growth method, i.e. U-type ampoule pulling. Resistivity of the as-grown crystal is up to 4×10¹¹ Ω cm, and IR transmission is up to 45% in the region from 7800 to 450 cm⁻¹. Therefore, the improved growth method is a promising convenient new method for the growth of high quality PbI₂ crystals.     

Precipitation of intermetallic phase in Zn‐Ti alloy single crystals

Pure and 0.14 at.%Ti alloyed Zn single crystals have been grown by the Bridgman technique. The alloyed crystal exhibits a sheet‐like precipitation structure parallel to the basal plane of the hexagonal solid solution Zn‐Ti matrix. The tetragonal precipitates are intermetallic compounds of Zn₁₆Ti composition. They are needle‐shaped with the needle axis peferentially aligned along the <a> axis. The approximate orientation relationship between precipitate and matrix is (0001)<11$\bar 2$ 0>_Matrix||(010)[001]_Zn16Ti. To study the influence of alloying on the mechanical properties, the critical resolved shear stress for basal slip has been measured in compression at different temperatures and strain rates. It is shown that the critical resolved shear stress can be very well explained by theories of solid solution and precipitation hardening. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of Nd:Sr3Ga2Ge4O14 crystals by a modified Bridgman method

Bridgman growth of Nd:SGG (Sr₃Ga₂Ge₄O₁₄) crystals has been investigated for the first time. Pt crucible of ∅︁25mm×250mm with a seed well of ∅︁10mm×80 mm is used, and seed is SGG crystal of ∅︁10mm×50mm grown by Bridgman method in advance. The growth parameters are optimized as the furnace temperature is set to 1450∼1500°C, temperature gradient in the crystal‐melt interface is less than 25 K/cm and growth rate is less than 0.5mm/h. The Nd:SGG crystals with 25mm in diameter and 60mm in length are grown successfully from 1.5 to 8at% Nd³⁺ doped stoichiometric Sr₃Ga₂Ge₄O₁₄ melt. The distribution coefficient and concentration of Nd³⁺ in Nd:SGG crystals are obviously higher than those of Nd:YAG crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

EPR studies of Cu(II) doped glycine lithium sulphate single crystals – a case of low hyperfine coupling constant

In order to rationalize the low hyperfine value for the parallel component of copper nucleus, another system with lithium as host has been investigated using Electron Paramagnetic Resonance (EPR) technique. Single crystal EPR studies have been carried out at 300 K on Cu(II) doped glycine lithium sulphate system. Angular variation of hyperfine structure lines in the three orthogonal planes show the presence of two sites which are magnetically inequivalent but chemically equivalent with g and A values as: g_xx = 2.084, g_yy = 2.057, g_zz = 2.311 and A_xx = 8.96 mT, A_yy = 3.26 mT, A_zz = 15.95 mT respectively. The impurity entered the lattice interstitially. The admixture and molecular coefficients are evaluated by collaborating EPR data with optical data. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Factors affecting the formation of misoriented domains in 6H‐SiC single crystals grown by PVT method

Misoriented domains (MDs) are common defects in 6H‐SiC single crystals. We performed an experimental study on the formation of MDs in 2‐inch 6H‐SiC single crystals. Micro‐Raman spectroscopy revealed that the polytype of MDs was mainly 4H‐SiC. By changing growth conditions, it was found that the MDs' formation was closely related to growth rate and the position of highest temperature relative to growth interface. When the growth rate of ingots was relatively high the MDs were more likely to form. Furthermore, the nearer growth interface the position of highest temperature was, the larger the size of the MDs. Based on our experimental findings we suggested that the MDs' formation and the polytype switching from 6H‐ to 4H‐SiC were due to too large axial and/or radial temperature gradients.The results would be helpful to improve the quality of SiC single crystals grown by PVT technique. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of 4‐(2‐hydroxyphenylamino)‐pent‐3‐en‐2‐one single crystals

4‐(2‐hydroxyphenylamino)‐pent‐3‐en‐2‐one (HPAP) was synthesized and single crystals were grown by the solution growth technique using methanol as a solvent. The crystals having orthorhombic symmetry were characterized by single crystal XRD, FTIR spectroscopy, NMR spectroscopy, TGA, DSC and dielectric studies. Very less variation in the value of dielectric constant is found for different frequencies of applied field. The crystals were exhibiting positive photoconductivity and poor NLO responses. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and single crystal growth of SnS by the Bridgman‐Stockbarger technique

SnS is a promising candidate as PV absorber material according to the material properties and the Loferski diagram, but despite the numerous publications on this material, the intrinsic material properties are widely unknown and the theoretical possible values for efficiency are still far away from those achieved in reality. Due to the fact that this material is mostly grown as thin film material, bulk research is rare. The material synthesis and the melt growth of tin monosulfide (SnS) by using Bridgman‐Stockbarger technique have been investigated in this study. After first growth experiments produced polycrystalline SnS, a significant reduction of the growth velocity lead to samples with a high amount of single crystalline material. These samples were investigated in detail regarding the structural and optical properties by using XRD/HRXRD, chemical etching and photoluminescence.     

Synthesis and characterization of single crystals of the layered copper hydroxide acetate Cu2(OH)3(CH3COO)·H2O

Single‐crystals of the layered copper hydroxide acetate Cu₂(OH)₃(CH₃COO)·H₂O were synthesized by heating copper acetate solution at 60 °C. The standard synthesis of the title compound based on slow titration of copper acetate solution with NaOH yielded materials with worse morphology and an additional phase present. The obtained products were characterized with powder X‐ray diffraction, high temperature powder X‐ray diffraction, scanning electron microscopy and infrared spectroscopy. The crystal structure was determined from single‐crystal X‐ray diffraction data, collected both at 120 K and at 293 K. The title compound crystallizes in the monoclinic botallackite‐type layered structure, space group P 2₁, with the lattice parameters a = 5.5776(3) Å, b = 6.0733(2) Å, c = 18.5134(8) Å, β = 91.802(4)° and a = 5.5875(4)Å, b = 6.0987(4) Å, c = 18.6801(10)Å, β = 91.934(5)° for 120 K and for 293 K, respectively. Acetate groups and water molecules are interlayered between corrugated sheets of edge‐sharing CuO6 octahedra exhibiting strong distortion resulted from the Jahn‐Teller effect. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Properties of AgGa1‐xInxSe2 single crystals grown by Bridgman method

High‐pure and single‐phase AgGa_1‐xIn_xSe₂ (x=0.2) polycrystalline was synthesized by the mechanical and temperature oscillation method. Adopting the modified Bridgman method an integral AgGa_1‐xIn_xSe₂ single crystal with diameter of 14 mm and length of 35 mm has been obtained at the rate of 6 mm/day. It was found that there is a new cleavage face which was (101), and observed the four order X‐ray spectrum of the {101} faces. By the method of DSC analysis the melting and freezing points of the AgGa_1‐xIn_xSe₂ (x=0.2) single crystal were about 828°C and 790°C. The transmission spectra of the AgGa_1‐xIn_xSe₂ (x=0.2) sample of 5×6×2 mm³ were obtained by means of UV and IR spectrophotometer. The limiting frequency was 774.316nm and the band gap was 1.6eV. It can be found in the infrared spectrum that the infrared transmission was above 60% from 4000cm^‐1 to 600cm^‐1. The value of α in 5.3µm and 10.6µm were 0.022cm^‐1 and 0.1cm^‐1 respectively. All results showed that the crystal was of good quality. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characteristics of traps in Tl2Ga2Se3S single crystals by low‐temperature thermoluminescence measurements

Defect characterization of Tl₂Ga₂Se₃S single crystals has been performed by thermoluminescence (TL) measurements at low temperatures between 10 and 70 K with various heating rate ranging from 0.6 to 1.0 K/s. The TL signal due to the luminescence from trap centers revealed one glow peak having maximum temperature of 36 K. Curve fitting and various heating rate methods were used for the analysis of the glow curve. The activation energy of 13 meV was found by the application of curve fitting method. This practical method also established that the trap center exhibits the characteristics of mixed (general) kinetic order. In addition, various heating rate analysis gave a compatible result (13 meV) with curve fitting as the temperature lag effect was taken into consideration. Distribution of traps was also investigated using an experimental method. A quasi‐continuous distribution was attributed to the determined trap centers.     

Growth and characterization of superconductive Nd2‐xCexCuO4‐y single crystals

Nd_2‐xCe_xCuO_4‐y single crystals with different x values have been successfully grown by Traveling Solvent Floating Zone method (TSFZ). Electronic properties of Nd_2‐xCe_xCuO_4‐y single crystals with various x have been studied in detail. The results show that superconductivity can be found in crystals with x > 0.1 (0.13‐0.18) directly grown at oxygen‐reduced atmosphere without post‐annealed, while no superconductivity appears in crystals with x < 0.1 at the same atmosphere. It is also found that, the segregation coefficient of Ce is determined to be 0.946 and transition temperature Tc (onset) reaches maximum value of 23.5 K at nominal composition x = 0.165. With further increase of Ce concentration, transition temperature of single crystals declines due to the precipitation of secondary Phases. In addition, the variation of lattice constants of Nd_2‐xCe_xCuO_4‐y single crystals with different x is also given. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Investigation of carrier scattering mechanisms in molybdenum diselenide single crystals by hall effect measurements

Molybdenum diselenide (MoSe₂) belong to the large family of layered transition metal dichalcogenides. It consists of weakly coupled sandwiched layers i.e. Se – Mo – Se in which a Mo atom layer is enclosed within two Se layers. This structure makes MoSe₂ extremely anisotropic in character and leads to unusual structural properties. In addition, MoSe₂ possess flexible nature along with good carrier mobility to make them potential candidate for fabricating flexible high mobility electronic devices such as Schottky barrier devices, FETs, solar cell etc. In context of this authors made an effort to study the low temperature (12 < T < 300 K) electronic transport properties of Molybdenum diselenide (MoSe₂). Through the investigation the temperature dependent Hall mobility study revealed that the grown crystals of MoSe₂possess a mixed scattering mechanism. It has been found that observed temperature dependant mobility has at least two transitions from lattice to impurity scatterings showing an imprint of multicarrier nature of this semiconductor originating from its complex band structure. It has been observed that the studied crystals have at least two group of carriers of differing origins in which transition between dominant scattering mechanisms occur at different temperatures. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)