The Nature of As-related Defects in Semi-Insulating GaAs Bulk Crystals

The behaviour of As-related defects in SI (semi-insulating) GaAs are studied from the viewpoint of the origination of As-related precipitates, generation and evolution of EL2 during postgrowth and the possible defect interactions involved EL2 variation under As overpressure annealing. The precipitates were identified as elemental As and As-rich GaAs polycrystalline grains and their features depend on the growth process. A defect interaction model has been proposed on the generation/annihilation of EL2 assigned as As_Ga V_As V_Ga complex respect to non-stoichiometry such as As_i V_Ga and V_As.     

Thermally activated de-excitation of the EL2 metastable state in GaAs

Measurements of absorption in the near infrared have been performed on n-type and undoped semi-insulating GaAs containing EL2 the main native defect in GaAs. The whole band of absorption related to EL2 disappeared after 1 μm light illumination when the crystal was cooled to helium temperatures. Measurements of the thermally activated recovery of EL2 absorption have been made. The rate of the de-excitation is well described by the formula: r = 1.7 · 10¹² · exp (−0.36 eV/kT) + 1.6 · 10⁻⁹ · n · exp (−0.085 eV/kT) s⁻¹ where n [cm⁻³] is the concentration of free electrons.     

Quenching by Copper Atoms of the EL2-induced Luminescence in GaAs

It is shown that the introduction of copper atoms into GaAs crystals containing antistructure defects EL2 (isolated arsenic atoms on gallium sites As_Ga) leads to a practically complete disappearance of the EL2-induced luminescence bands peaked at 0.63 and 0.68eV. This effect is connected with the passivation of the EL2 defects (i.e. with the substantial decrease in their concentration) because of their interaction with copper atoms (they become bound by copper atoms) resulting in an appearance of electrically inactive AS_GaCU_Ga complexes.     

Electroluminescence studies of chemically deposited (Zn‐Cd)S:Cu,F films

Electroluminescence (EL) emission has been observed under AC field excitation in chemically deposited (dipping technique) films of (Zn‐Cd)S:Cu,F using substrates of conducting glass plates. Results of XRD, SEM, absorption spectra, transmission spectra, EL emission spectra, voltage, frequency and temperature dependence and brightness waves of EL brightness are presented and discussed. SEM studies show better growth condition in presence of F. X‐ray diffraction studies show diffraction lines due to CdS and ZnS. Both the studies represent average particle sizes of the order of 1Å. Absorption studies show change in band gap due to increasing concentration of ZnS. The observed EL emission (blue‐green region) may be due to Cu, F combination. Results of transmission spectra give band gap similar to those given by absorption spectra. From voltage dependence of EL brightness acceleration‐collision mechanism is found to be effective. Frequency dependence of EL brightness shows first an increase in brightness in the lower frequency range followed by saturation at higher frequencies. Temperature dependence of EL emission shows a maximum at 40°C. Brightness waves consist of primary and secondary waves, which depend on voltage and frequency of excitation & the ambient temperature. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The Electroluminescence Spectra of Light-Emitting Devices Based on Zinc Complexes of Amino-Substituted Ligands

Exciplex bands in the electroluminescence (EL) spectra of electroluminescent devices based on the new zinc complexes of amino-substituted benzothiazoles and in the photoluminescence (PL) spectra of the blends of a zinc complex and the triphenylamine derivative are studied. For the EL spectra, it is found that the relation between the exciplex bands and the intrinsic bands of the zinc complex emission depends on the thickness of layers in the EL devices and on the applied voltage. For the PL spectra of blends, this relation strongly depends on the concentration of components.     

Native Point Defects and Nonstoichiometry in GaAs (II) Mechanism of Formation and Degradation of Semiinsulating Properties of Undoped Gallium Arsenide Crystals

The nature of the main electron trap, EL2, in undoped semiinsulating GaAs crystals have been studied both qualitatively and quantitatively. It has been shown that point defects which, most probably, are responsible for the EL2 level are antisite As_Ga defects or (As_i V_Gs) complexes which are indistinguishable from the thermodynamic standpoint. The enthalpy and entropy of As_Ga formation according to the reaction As_As + V_Ga ⇄ As_Ga + V_As are equal to 0.5 eV and −7k, respectively.     

Electroluminescence in Amorphous Pyrazoline Films Under DC Fields

We have investigated the electroluminescence, EL, behavior in amorphous films of a pyrazoline derivative under dc fields. The current vs. voltage characteristics indicated a space charge limited current behavior with traps distributed exponentially within the forbidden energy gap. EL was detected in the current range of double carrier injection which ocurred after all traps in the sample were filled up. Spectral studies showed that the light emission zone was loalized around the cathode side of the pyrazoline film. The brightness, measured as a function of current, indicated the EL in the lower current density range to be dominated by delayed luminescence.     

Antistructure disorder and its relation to dislocations in III–V semiconductors

Intimate relationship between antistructure defects and dislocations occurs in GaAs which manifests itself as: (i) appearing of spatial correlation between grown-in dislocations and the EL2 defects (component of the latter are As_Ga antisites), (ii) similar suppression of the concentration of EL2 and dislocation density due to the doping with donor impurities, (iii) generation of As_Ga antisites during the plastic deformation of a crystal. Al these effects can be understood in terms of the dislocation-mediated generation of As_Ga antisites via absorption of As_i interstitials at dislocation jogs. Large anion (cation) precipitates appearing at dislocations are pointed out to be important for both antisite and dislocation generation under certain conditions.     

On the Analysis of Hydrogen in as grown and Ion Implanted GaAs Single Crystals

Hydrogen detection and analysis was carried out on the undoped semi‐insulating (S.I.) gallium arsenide (GaAs) single crystal using conventional elastic recoil detection analysis (ERDA) technique with high energy, heavy ion beam. Presence of hydrogen (nearly 3 x 1020 atoms/cc) has been observed on the as‐grown samples and further high concentration of atomic hydrogen (total concentration of 7 x 1020 atoms/cc) was found at the surface and was found to be decreasing with depth after 100 nm. Further the low energy hydrogen and oxygen ions implanted separately in GaAs at room temperature were also analysed by ERDA technique. From the analysis, the projected range (Rp) of 100 keV hydrogen and oxygen ions in GaAs was determined to be 891 nm (with Δ Rp equal to 320 nm), 170 nm (with Δ Rp equal to 120 nm) respectively. The experimentally determined values of both Rp and Δ Rp are more as compared with the values obtained using the TRIM theoretical program. Low temperature (4K) photoluminescence (PL) measurements of un‐implanted and H⁺ implanted samples show the passivation of intrinsic deep level defect EL2 and shallow acceptor impurity carbon by the low energy implanted hydrogen ions. The low energy hydrogen implantation may be used as a method of hydrogenation for passivation.     

Hole burning experiments with proteins: Relaxations,fluctuations and glass-like features

We present a series of different spectral hole burning experiments, such as aging and waiting time experiments and thermal cycling experiments to gain information on features of the EL of proteins and the associated physics. We focus on heme proteins. Spectral diffusion dynamics in proteins follow a power law in waiting time. If the protein is unfolded the dynamics change to a logarithmic time law as widely observed in glasses. Thermal cycling experiments with proteins show, in addition to random features, also discrete features. There are severe solvent effects demonstrating that the EL is strongly influenced by the solvent. We demonstrate that the hole recovery reaction may strongly depend on protein relaxation, and finally, we link features of the EL to characteristic properties of the folding–unfolding transition.     

Comparative study of electroluminescence from annealed amorphous SiC single layer and amorphous Si/SiC multilayers

Si quantum dots (Si QDs) films were prepared by annealing amorphous SiC single layer and amorphous Si/SiC multilayers fabricated in plasma enhanced chemical vapor deposition system. The microstructures were characterized by Raman spectroscopy as well as Fourier transforms infrared spectroscopy for both samples. It was found that Si QDs with average size of 2.7 nm were formed after annealing and the electroluminescence (EL) band centered at 650 nm can be observed at room temperature. The EL intensity from the Si/SiC multilayers was obviously improved by one order of magnitude and the corresponding EL band width was reduced compared with that from SiC single layer film. The improved electroluminescence behavior can be attributed to the formation of the denser Si QDs, good size distribution and the strong confinement effect of carriers in multilayerd structures.     

Low-Frequency Dielectric Relaxations in Nematics and Dual-Frequency Addressing of Field Effects

Abstract

Novel low threshold nematic mixtures are presented exhibiting very low dielectric crossover frequencies f_c ? 1 kHz at 20°C and unusually large, low- as well as high-frequency dielectric anisotropies ΔEL > 4 and ΔEH < 4 respectively. ΔEL and ΔEH are shown to be independently adjustable. The frequency and temperature dependence of the dielectric constants as well as the optical, elastic and viscous material constants are measured. Approximations are derived which quantitatively describe the influence of the LC material properties on the static electro-optical performance of dual-frequency addressed twisted nematic displays. It is shown that the number of multiplexable lines of dual-frequency addressed TN-LCDs comprising the new materials can be increased by more than a factor of 30 compared with conventional addressing. Moreover, very short turn-off times are reported.     

Effect of plasma hydrogenation on the defect properties of CuInSe2 single crystals

The defect properties of p-type CuInSe₂ single crystals hydrogenated by diffusion from a plasma source are investigated using the Rutherford backscattering/channeling technique and photoacoustic spectroscopy. Plasma hydrogenation is found to produce severe lattice damage, to affect the intrinsic defect equilibrium in the near surface region of the crystals and to create an additional donor. A defect formation model including both defect passivation by hydrogen and damage induced defect creation is proposed to explain the experimental data. The thermal stability of the property modifications is limited to temperatures below about 100 °C.     

Undoped semi-insulating GaAs crystals grown by a modified low pressure LEC method

A modified low pressure in-situ synthesis LEC method of growing undoped SI (semi-insulating) GaAs crystals has been established. The key points for controlling melt composition and As evaporation during synthesis and growth have been described. Using this novel approach, crystals are able to be grown from the nominal melt composition in the range of 0.491–0.499 As fraction with high reproducibility. Some characteristics of the undoped SI crystals grown by the present work including electrical properties, dislocation density, carbon and EL2 concentrations and thermal annealing effects have been studied.     

Emission from Charge-Transfer States in Bulk Heterojunction Organic Photovoltaic Cells Based on Ethylenedioxythiophene-Fluorene Polymers

We investigated the electroluminescence (EL) from charge-transfer (CT) in the interface state of PEDOTF/PC₇₀BM, known to be empirically related to V_oc, to elucidate a difference in V_oc of 0.24 V in bulk heterojunction (BHJ) organic photovoltaic cells (OPVs) based on two polymers (H-PEDOTF and S-PEDOTF with a high and low molecular weight, respectively) having almost the same HOMO energy levels. The difference in the energies of CT EL peaks is relatively small (0.06 eV) compared to the difference in the V_ocs. Consequently, we mainly attribute the excessive loss of V_oc in S-PEDOTF-based OPVs to a trap assisted recombination mechanism.     

Electroluminescence from Er and Yb co-doped silicon dioxide layers: The excitation mechanism

The excitation mechanism of photo- (PL) and electroluminescence (EL) of erbium ions co-implanted with ytterbium into the SiO₂ layer of light emitting MOS devices (MOSLED) was investigated. Ytterbium implanted and annealed samples exhibit the blue and near infrared electroluminescence. The blue electroluminescence at 470 nm appears due to cooperative up-conversion emission in the Yb³⁺-Yb³⁺ system, and the near infrared EL at 975 and 1025 nm corresponds to transitions from the multiple state ²F_5/2 to the ²F_7/2 ground state in the Yb³⁺ ions. The Er implanted SiO₂ exhibits the luminescence in the blue-green and infrared region. The green and blue peaks correspond to radiative transitions from the ²H_11/2 or ⁴S_3/2 energy levels and from the ²H_9/2 or ⁴F_5/2 energy levels to the ⁴I_15/2 ground state, respectively. We have found that the energy transfer from Yb³⁺ to Er³⁺ ions exists only during photoluminescence excitation. The electroluminescence investigation shows the cooperative up-conversion in the Er³⁺-Yb³⁺ system.     

Phase diagram of the SrS–Ga2S3 system and its application to the single-crystal growth of SrGa2S4

Ce-doped SrGa₂S₄ compound is expected as a new host material of blue EL devices. However, the basic properties of bulk single crystals have not been fully clarified, since this compound has been mostly synthesized in the form of polycrystals or thin films. Here, we firstly present the pseudo-binary phase diagram of the SrS–Ga₂S₃ system constructed in accordance with our DTA data for single-crystal growth of SrGa₂S₄. It is shown that SrGa₂S₄ compound has a congruent melting point and a eutectic reaction in the side of excess of Ga₂S₃ concentration. On the basis of the phase diagram, single crystals of SrGa₂S₄ are grown using Ga₂S₃ as a self-flux in a horizontal Bridgman furnace. Colorless and transparent crystals having a typical size 2×2×2 mm³ are obtained.     

Defect reduction in GaN epilayers and HFET structures grown on (0 0 0 1)sapphire by ammonia MBE

The quality of GaN epilayers grown by molecular beam epitaxy on substrates such as sapphire and silicon carbide has improved considerably over the past few years and in fact now produces AlGaN/GaN HEMT devices with characteristics among the best reported for any growth technique. However, only recently has the bulk defect density of MBE grown GaN achieved levels comparable to that obtained by MOVPE and with a comparable level of electrical performance. In this paper, we report the ammonia-MBE growth of GaN epilayers and HFET structures on (0 0 0 1)sapphire. The effect of growth temperature on the defect density of single GaN layers and the effect of an insulating carbon doped layer on the defect density of an overgrown channel layer in the HFET structures is reported. The quality of the epilayers has been studied using Hall effect and the defect density using TEM, SEM and wet etching. The growth of an insulating carbon-doped buffer layer followed by an undoped GaN channel layer results in a defect density in the channel layer of 2×10⁸ cm⁻². Mobilities close to 490 cm²/Vs at a carrier density of 8×10¹⁶ cm⁻³ for a 0.4 μm thick channel layer has been observed. Growth temperature is one of the most critical parameters for achieving this low defect density both in the bulk layers and the FET structures. Photo-chemical wet etching has been used to reveal the defect structure in these layers.     

钨酸钡晶体本征点缺陷的模拟计算

本文利用晶格动力学软件GULP模拟计算了钨酸钡晶体的本征点缺陷,首先利用驰豫拟合的方法得到离子之间的相互作用势,利用这些相互作用势计算得到的结果与实验结果吻合得很好,在此基础上计算晶体本征缺陷的生成能,通过对本征点缺陷生成能的分析得到以下结论:钨酸钡晶体内V2+O的数量要大于V2-Ba的数量;钨酸钡晶体内缺陷态主要以V2-Ba-V2+O空位对和F色心形式存在.     

Synthesis and Property of New Blue Emitting Materials with Bulky Side Group

Two emitting compounds, 9,10-bis-[1,1′;3′,1′′]terphenyl-5′-yl-1,5-di-o-tolyl-anthracene [TP-DTA-TP] and 9,10-bis-phenyl[1,1′;3′,1′′]triphenyl-5′-yl-1,5-di-o-tolyl-anthracene [TPB-DTA-TPB] based on new twisted core moiety were synthesized through boration, Suzuki reaction, and Sandmeyer reactions. EL performance was improved by varying the chemical structure of the side group. Physical properties such as optical, electrochemical, and electroluminescent properties were investigated. Synthesized compounds were used as an EML in OLED device: ITO / 2-TNATA (60nm) / NPB (15nm)/ TP-DTA-TP or TPB-DTA-TPB (35 nm) / Alq3 (20nm) / LiF (1nm) / Al (200nm). It was found that TPB-DTA-TPB showed higher luminance efficiency and better C.I.E. value than TP-DTA-TP device.