Annealing of electron irradiated GaP studied by positron lifetime technique

GaP single crystals were irradiated by 3 MeV electrons at 20 K to a dose of 4 × 10¹⁸ e/cm². An isochronal annealing in temperature region 77 ÷ 650 K followed the irradiation. Positron lifetime measurement indicated the presence of irradiation-induced vacancies in Ga sublattice. The vacancies disappeared at two stages observed at temperatures 200 ÷ 300 K and 450 ÷ 550 K.     

Ultrafast Optical Response in Quasi-One Dimensional Halogen-Bridged Mixed-Valence Complexes [Pt(en)2][PtBr2(en)2](ClO4)4 and [Pd(en)2][PdCl2(en)2](ClO4)4

Abstract

Ultrafast optical response in two quasi-one-dimensional halogen-bridged mixed-valence complexs [Pt(en)₂][PtBr₂(en)₂](ClO₄)₄ (en=ethylenediamine) (abbreviated as PtBr) and [Pt(en)₂][PtBr₂(en)₂](ClO₄)₄ (as PdCl) has been investigated by femtosecond absorption spectroscopy at room temperature by pump-probe spectroscopy. The photo-induced absorption around 1.3 eV and the bleaching from 1.5 eV to 2.7 eV were observed in PtBr. Both consist of a fast-decay component due to STEs and a slow-decay component due probably to polaron pairs. The former decays exponentially with the time constant of 1.4 ± 0.2 ps. The latter decays as erf(t ^β) with β = -0.22 ± 0.02, indicating the geminate recombination of an electron polaron and a hole polaron after moving freely along the chain. The deviation of β from the ideal random-walk model (β = -0.5) is explained by introducing the effect of potential barrier between the polarons hindering the recombination. A pump-probe absorption spectrum of PdCl is obtained from the reflection spectrum by the Kramers-Kronig relations. The time dependence of the transient photoinduced absorption around 1.7 eV and the bleaching from 1.9 eV to 2.5 eV were calculated to be described with three components. They correspond to free excitons with lifetime of about 800 fs, self-trapped excitons with lifetime of about 3 ps, and polaron pairs which hardly relax within 100 ps.     

Growth and characterization of GaP and GaAs1−xPx

The minority carrier lifetime at low and high excitation densities was determined in VPE layers of GaP and GaAs_?0.2 P_?0.8. The lifetime at high excitation densities, having a value up to ∽350 ns, is one to two orders of magnitude larger than the lifetime at low excitation densities. It is shown that impurities are involved in some saturable killer centres dominating at low excitation densities. In the case of the largest values of the minority carrier lifetime and at a dislocation density of > 10⁵ cm^?2, the non-radiative recombination at high excitation densities is shown to occur at dislocations; at lower values of the minority carrier lifetime the killer action may be due to microprecipitates. These findings also hold for LPE layers of GaP. It is shown that by measuring the minority carrier lifetime as a function of temperature a discrimination is possible between killer action due to diffusion of minorities towards sinks like dislocations or microprecipitates and due to capture by a normal point-defect type recombination centre.     

Vacancy defects in as-grown and nº-irradiated GaP and GaAs1−xPx Studied by Positrons

Measurements of positron lifetime τ and of the shape parameter S of the Doppler-broadened annihilation line are used to study bulk and defect properties in GaP and GaAs_1−xP_x. τ and S decrease linearly with the composition x of GaAs_1−xP_x layers. A second lifetime component (τ₂ = 290 ps) observed in as-grown GaP is attributed to stoichiometric P vacancies. After neutron irradiation of GaP and GaAs_0.13P_0.87 positrons are trapped by Ga vacancies (τ₂ = 250 ps). These vacancies anneal out in two stages at 200–550 °C and 550–800 °C.     

Semiconducting Properties of TI2Te3 Single Crystals

Electrical conductivity and Hall effect measurements were performed on single crystals of TI₂Te₃ to have the general semiconducting behaviour of this compound. The measurements were done at the temperature range 160–350 K. All crystals were found to be of p-type conductivity. The values of the Hall coefficient and the electrical conductivity at room temperature were 1.59 × 10³ cm³/coul and 3.2 × 10⁻² ω⁻¹ cm⁻¹, respectively. The hole concentration at the same temperature was driven as 39.31 × 10¹¹ cm⁻³. The energy gap was found to be 0.7 eV where the depth of impurity centers was 0.45 eV. The temperature dependence of the mobility is discussed.     

Preparation,physicochemical and third order nonlinear optical properties of bis(tetrabutylammonium)bis(2‐thioxo‐1,3‐dithiole‐4,5‐dithiolato)mercurate(II)

Bis(tetrabutylammonium)bis(2‐thioxo‐1,3‐dithiole‐4,5‐dithiolato)mercurate(II) was prepared and characterized by elemental analyses, electronic absorption, infrared and X‐ray powder diffraction spectroscopy. The specific heat of the crystal was measured to be 1878.2 J.mol^–1K^–1 at 300 K. The thermal decomposition process was investigated by means of thermogravimetric analysis and differential thermal analysis measurements in air together with infrared and X‐ray powder diffraction spectra. The third‐order nonlinear optical properties at 800 nm were measured by femtosecond optical Kerr gate technique by using CS₂ as reference. The third‐order optical susceptibility of its acetone solution at the concentration of 9.27 × 10^–4 M was obtained to be 2.53 × 10^–14 esu. The second‐order hyperpolarizability was estimated to be 1.7 × 10^–32 esu and the response time was about 226 fs. The third order nonlinear optical properties at 532 nm were investigated by using the Z‐scan technique with 20 ps. It exhibited self‐focusing effect and saturable absorption. The second molecular hyperpolarizability was estimated to be 8.4 × 10^–32 esu. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Etude par Calorimetrie,Diffraction des Rayons X et Diffusion Raman d'une Transition de Phase dans (C4 H4P) Mn (CO)3

Abstract

Heat capacity measurements (95-300K), X-ray diffraction (78-300K) and low frequency Raman spectroscopy (10-350K) have evidenced an order-disorder phase transition in phosphacymantrene, (C₄ H₄P) Mn (CO)₃. This transition has been characterized by a monoclinic ←→ triclinic structural change at about 110 K and by a pretransitional phenomenon. The measured transition enthalpy and entropy are 480 ± 10J.mil^?1 and 4.17 ± 0.08J.K^?1 mol^?1, at 115 K, respectively.

A complete assignment of the observed Raman bands in h₄ and d₄ derivatives is proposed. From the temperature dependence of frequencies, intensities and half-widths of some Raman bands we have discussed the order, the nature and the mechanism of the phase transition: intermolecular interactions appear to be mainly involved in the mechanism and an activation energy roughly equal to 2100 ± 840 J. mol^?1 has been determined.     

Analyse de la Raie Zéro-Phonon et des Processus de Relaxation Excitoniques dans le Spectre d'Absorption Singulet-Triplet du Cristal de 4-4′-Dichlorobenzophenone

Abstract

In this paper we discuss the dynamic scattering information which can be obtained from an analysis, at high resolution, of the triplet exciton absorption band in the molecular crystal 4-4′-dichlorobenzophenone. The zero phonon lineshapes, widths and positions are investigated as a function of temperature. At temperatures below 30 K the broadening and the shift are analyzed in terms of exchange theory involving a torsional mode of the molecule. The lifetime in the phonon promoted state is 0.75 ps over the range 5 K-30 K. The difference between the excited and ground state energies of the torsional mode is δω = -8.45 cm^?1. Above 30 K the change on linewidth is discussed in a model which implies a momentarily localization of the exciton by lattice phonons. During the localization time a weak coupling between the trapped excitation and phonons is assumed. At very low temperatures the lineshape is asymmetric, gaussian on the high energy side, lorentzian on the low energy side. This experimental result may be due to the fact that the k = 0 level is at the bottom of the exciton band.     

Properties of a-Si:H prepared by the photochemical decomposition of Si2H6

High quality a-Si:H films have been prepared by the direct photolysis of disilane at a substrate temperature below 350 °C. The growth rate is independent of substrate temperature for both undoped and phosphorus doped films, while it is thermally activated and dramatically enhanced by boron doping. The hydrogen content decreases from 7 to 2 at.%, as deposition temperature is varied from 200 to 300 °C. The photoconductivity as high as 3.7 × 10^?4 Ω^?1cm^?1 (AM1 100 mW/cm²) has been obtained and no light soak degradation was observed.     

Spectroscopic properties of Co2+ ions in La2O3–MgO–Al2O3–SiO2 glass-ceramics

Co²⁺-doped La₂O₃–MgO–Al₂O₃–SiO₂ (LMAS) glass-ceramics was synthesized by conventional method. The microstructure of LMAS GCs heat-treated at 760 °C/12 h + 930 °C/4 h was characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The spectroscopic properties of Co²⁺-doped LMAS GCs were studied by absorption spectrum, excitation spectrum, and temperature dependent luminescence spectra. XRD results revealed the sizes of MgAl₂O₄ crystalline phases are about 9.1 ± 1.5 nm. The three peaks in the visible absorption band of LMAS GCs at 549 nm, 585 nm and 626 nm are connected with the transitions from ⁴A₂ level to ²A₁/²T₂(²G), ⁴T₁(⁴P) and ²E/²T₁(²G) levels, respectively, and excitations into them emit the radiation at around 666 nm. The luminescence intensity increased with temperature increasing from 10 K to 150 K, while it weakened with temperature increasing from 150 K to 350 K. These features were explained by the effects of two competing mechanisms.     

Crystal Data,Electrical Resisitivity and Mobility in Cu3In5Se9 and Cu3In5Te9 Single Crystals

X-ray powder diffraction data were obtained for Cu₃In₅Se₉ and Cu₃Te₉, which were found to crystallize in orthorhombic and tetragonal systems, respectively. The electrical resistivities and Hall mobilities of these compounds were investigated in the temperature range 35–475 K. Cu₃In₅Se₉, was identified to be n-type with a room temperature resistivity of 3 × 10³ Ω·cm which decreases with increasing temperature. For T < 65 K impurity activation energy of 0.03 eV and for T > 350 K onset of intrinsic conduction yielding a band gap energy of 0.99eV were detected. The neutral impurity scattering was found to dominate at low temperatures, while in the high temperature region thermally activated mobility was observed. Cu₃In₅Te₉ exhibits p-type conduction with a room temperature resistivity of 8.5 × 10⁻³ Ω·cm decreasing sharply above 400 K and yielding an impurity ionization energy of 0.13 eV. The temperature dependence of mobility indicates the presence of lattice and ionized impuritiy scattering mechanisms above and below 160 K, respectively.     

Crystal growth and spectral properties of Nd:Ca5(BO3)3F

A neodymium doped Ca₅(BO₃)₃F single crystal with size up to 51×48×8 mm³ has been grown by the top seeded solution growth (TSSG) technique with a Li₂O‐B₂O₃‐LiF flux. The spectra of absorption and fluorescence were measured at room temperature. According to Judd‐Ofelt (J‐O) theory, the spectroscopic parameters were calculated and the J‐O parameters Ω₂, Ω₄, Ω₆ were obtained as follows: Ω₂ = 1.41×10⁻²⁰cm², Ω₄ = 3.18×10⁻²⁰cm², Ω₆ = 2.11×10⁻²⁰cm². The room temperature fluorescence lifetime of NCBF was measured to be 51.8 μs. According to the J‐O paramenters, the emission probabilities of transitions, branching ratios, the radiative lifetime and the quantum efficiency from the Nd^{3+ 4}F_3/2 metastable state to lower lying J manifolds were also obtained. In comparasion with other Nd‐doped borate crystals, the calculated and experimental parameters show that NCBF is a promising SFD crystal.     

Instability of the local environment of Mn<Superscript>2+</Superscript> in BaF<Subscript>2</Subscript>

Excitation and luminescence spectra and luminescence lifetime of Mn²⁺ ion in BaF₂ crystals at 77 K have been investigated for the first time. Mn²⁺ ions in the crystal are coordinated by six and eight fluorine ions, have a trigonal environment, and form exchange-coupled pairs. Several types of centers of the Mn²⁺ ion are formed mainly because of the large difference in the Mn²⁺ and Ba²⁺ ionic radii, which causes instability of the local structure around the activator and its strain, and exchange striction. An increase in the impurity concentration enhances these factors, thus changing the relative concentration of various centers.     

Magnetic and electric field characterization of La2CoMnO6 crystals doped with Pb

Crystals of La₂CoMnO₆ doped with Pb were successfully grown by the high temperature solution growth method and their magnetic and transport properties were studied. The examined crystal is found to have predominantly ordered Co²⁺/Mn⁴⁺ structure with randomly distributed Mn³⁺ substituting Co²⁺. A relaxor‐like temperature dependence of the dielectric constant with relaxation maximum is established in the temperature interval 180–210 K. On the base of the dc‐conductivity data, it is assumed that the charge transport in the interval 180–350 K is governed by small‐polaron hopping, whose onset coincides with the Curie temperature.     

Properties of titanium solid solutions prepared by reactive sputtering

Films of titanium solid solutions Ti-X_x (X = C, N, or O) of the hexagonal phase were prepared on glass substrates heated at 350°C in a mixture of argon and the reactive gas with controlled partial pressures from 2×10^?6 to 8×10^?3 Torr. The maximum solubilities of C, N, and O in Ti were estimated to be 0.05, 0.46, and 0.28, respectively. The observed values of the maximum solubilities are discussed in connection with the structural and electrical properties.     

Synthesis,characterization and impedance spectroscopy of the new material [(CH3) (C6H5) 3P] 2CoBr4: a member of the A2BX4 family

The crystal structure of bis‐(methyltriphenylphosphonium) tetrabromocobaltate (II), [(C₁₉H₁₈P)₂ CoBr₄] is determined: M_r = 933.203, monoclinic, P2₁, a = 9. 6977 (3) Å, b = 12.5547 (4)Å, c = 16.4503 (6)Å, β = 105.603 (2)°, V = 1929.04 (11)ų, Z = 2, D_x = 1.607 Mg m^‐3, T = 298 K. Differential thermal analysis at high temperatures shows three endothermic peaks characterizing four phases, with onset temperatures at T₁= 313±2 K, T₂ = 320±4 K and T₃= 360±1 K. The structural instability detected via the temperature dependence of permittivity at T₁ is ascribed to order‐disorder transition associated with cation dipole reorientation. Permittivity and ac conductivity studies as a function of temperature (295 K‐375 K) and frequency (0.11 kHz < f <100 kHz) are presented. The results indicate the importance of the cation size and shape on the phase transitions in the system. Bulk conductivity behavior is thermally activated. The associated activation energies are in the range 2.9 to 1.0 eV depending on the temperature regime. Two contributions to the ac conductivity, one dominating at low temperatures and high frequencies which are characterized by superlinear frequency exponent and the second dominates at high temperatures characterized by a sublinear frequency exponent. The behavior is interpreted in terms of the jump relaxation model. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Recent photoluminescence research on chalcogenide glasses for photonics applications

The optical properties of GeGaSe glasses doped with Er by the addition of Er₂S₃ have been investigated. Optically uniform glasses have been prepared using stoichiometric compositions with 9–12 at.% Ga and doped with 0.5–2 at.% Er. The radiative lifetime of the ⁴I_13/2 → ⁴I_15/2 transition has been estimated to be equal to 1.78 ms using the Judd–Ofelt analysis. The photoluminescence lifetime distribution has been investigated in optimized glasses using Quadrature Frequency-Resolved Spectroscopy at room and liquid helium temperatures and at different emission wavelengths. All lifetime distributions were found to be sharp peaks centered at ∼2 ms. A radiation diffusion model has been used to understand the discrepancy between measured photoluminescence spectra and those predicted by the McCumber theory. The model predicts a radiative lifetime of the ⁴I_13/2 → ⁴I_15/2 transition to be around 1.72 ms and a much longer non-radiative lifetime. These results assume quasi-uniform distribution of Er³⁺ ions with negligible concentration-self-quenching and negligible rate of non-radiative relaxation from ⁴I_13/2 to ⁴I_15/2.     

Thermally Stimulated Current Observation of Trapping Centers in Undoped GaSe Layered Single Crystals

Undoped p‐GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10‐300 K were performed at a heating rate of 0.18 K/s. The analysis of the data revealed three trap levels at 0.02 , 0.10 and 0.26 eV. The calculation for these traps yielded 8.8 × 10^‐27, 1.9 × 10^‐25, and 3.2 × 10^‐21 cm² for capture cross sections and 3.2 × 10¹⁴, 1.1 × 10¹⁶, and 1.2 × 10¹⁶ cm^‐3 for the concentrations, respectively.     

Dielectric Properties of Tin Oxide Thin Film Capacitors

Thin films of several thicknesses in the form of MIM structures are prepared from the powders of tin oxide (SnO₂) by thermal evaporation technique in a vacuum of 10⁻⁵ Torr. The dielectric properties of tin oxide film capacitors have been studied with temperatures varying from 77 to 400 K and also with frequency. At 77 K the values of capacitance and loss tangent are small for these films. With increasing temperature the values of capacitance and loss tangent increase. The capacitance-temperature plots show peak values of capacitance at 345 K for 1 kHz, 350 K for 2 kHz, 360 K for 5 kHz and 368 K for 10 kHz. These peak values of capacitance can be eliminated by repeated heating and cooling of the structures. The activation energy for the migration of charge carriers is calculated for tin oxide films and is found to be 0.13 eV. The results obtained on the dielectric properties of tin oxide thin films are presented and discussed.     

Epitaxial layers of CuInTe2 on GaAs

CuInTe₂ thin films were deposited onto semi-insulating (111)A-oriented GaAs substrates by flash evaporation. Epitaxial growth was found in the substrate temperature range T_sub = 620 … 790 K. Above 750 K a second phase was found besides the chalcopyrite phase. All epitaxial films were p-type conducting and showed an increase of the hole concentration with rising substrate temperature above T_sub = 720 K. Three acceptor states with ionization energies of 350 … 500 meV, 135 … 150 meV, and of some 10⁻³ eV were found.