Superradiant and Aharonov-Bohm effect for the quantum ring exciton

The Aharonov-Bohm and superradiant effect on the radiative decay rate of an exciton in a quantum ring is studied. With the increasing of ring radius, the exciton decay rate is enhanced by superradiance, while the amplitude of AB oscillation is decreased. The competition between these two effects is shown explicitly and may be observable in time-resolved experiments.     

Temperature dependent time-resolved exciton luminescence in GaAs/AlGaAs quantum wires and dots

Transient photoluminescence of GaAs/AlGaAs quantum wires and quantum dots formed by strain confinement is studied as a function of temperature. At low temperature, luminescent decay times of the wires and dots correspond to the radiative decay times of localized excitons. The radiative decay time can be either longer or shorter than that of the host quantum well, depending on the size of the wires and dots. For small wires and dots (∼ 100 nm stressor), the exciton radiative recombination rate increases due to lateral confinement. Exciton localization due to the fluctuation of quantum well thickness plays an important role in the temperature dependence of luminescent decay time and exciton transfer in quantum wire and dot structures up to at least ∼ 80 K. Lateral exciton transfer in quantum wire and dot structures formed by laterally patterning quantum wells strongly affects the dynamics of wire and dot luminescence. The relaxation time of hot excitons increases with the depth of strain confinement, but we find no convincing evidence that it is significantly slower in quasi 1-D or 0-D systems than in quantum wells.     

The kinetics of exciton photoluminescence in mercuric iodide

Time-resolved photoluminescence (TRPL) of red mercuric iodide single crystal is measured at low temperatures and its two-photon luminescence is measured at room temperature. Sharp near band-gap luminescence is observed around 530 nm and was ascribed to radiative annihilation of free and bound excitons; the phonon replica of exciton luminescence are found between 533 and 540 nm at low temperatures. TRPL experiment reveals that near band-gap luminescence comprises fast and slow decay components and shows the different relaxation processes between free and bound exciton annihilation. Luminescence of bound excitons steeply lowers with increasing temperature and disappears about 40 K. A luminescence tail band is observed around 540 nm that is ascribed to defects in the anion sublattice. The temporal behavior of the tail band is described by rate equations very well. A broad luminescent band appears at 630 nm. The decay curves suggest that the luminescence is ascribed to the radiative recombination of donor-acceptor pairs and there are two kinds of mechanisms to control the decay. At room temperature, a luminescent band appears at the band-gap region, which shows the band-gap at room temperature is about 2.125 eV.     

Theory of multi-exciton states in semiconductor nanocrystals

In this article, the fundamental physics of multi-exciton states in semiconductor nano-crystals is reviewed focusing on the mesoscopic enhancement of the excitonic radiative decay rate and the excitonic optical nonlinearity and the mechanism of their saturation with increase of the nanocrystal size. In the case of the radiative decay rate the thermal excitation of excited exciton states having small oscillator strength within the homogeneous linewidth of the exciton ground state is essential in determining the saturation behavior. The weakly correlated exciton pair states are found to cause a cancellation effect in the third-order nonlinear optical susceptibility at the exciton resonance, providing the first consistent understanding of the experimentally observed saturation of the mesoscopic enhancement of the excitonic optical nonlinearity. The presence of the weakly correlated exciton pair states is confirmed convincingly from the good correspondence between theory and experiments on the induced absorption spectra from the exciton state in CuCl nanocrystals. Furthermore, ultrafast relaxation processes of biexcitons are discussed in conjunction with the observed very fast rise of the biexciton gain in nanocrystals. In prospect of future progress in research, the theoretical formulation to calculate the triexciton states as one of the multi-exciton states beyond the biexciton is presented for the first time including the electron-hole exchange interaction.     

Resonant interaction between excitons and intense coherent light

Starting from a Hamiltonian which describes the interaction of the many-electron system of a crystal with the quantized light field, we derive a set of nonlinear wave-equations for the field and exciton amplitude and the exciton occupation number. Our treatment comprises both Frenkel and Wannier excitons. Our equations form a sound basis for treating both pulse-propagation phenomena and giant polaritons in crystals.     

Effects of excitation spectral width on decay profile of weakly confined excitons

We report the effect due to a simultaneous excitation of several exciton states on the radiative decay profiles on the basis of the nonlocal response of weakly confined excitons in GaAs thin films. In the case of excitation of single exciton state, the transient grating signal has two decay components. The fast decay component comes from nonlocal response, and the long-lived component is attributed to free exciton decay. With an increase of excitation spectral width, the nonlocal component becomes small in comparison with the long-lived component, and disappears under irradiation of a femtosecond-pulse laser with broader spectral width. The transient grating spectra clearly indicates the contribution of the weakly confined excitons to the signal, and the exciton line width hardly changes by excitation spectral width. From these results, we concluded that the change of decay profile is attributed not to the many-body effect but to the effect of simultaneous excitation of several exciton states.     

Frequency and density dependent radiative recombination processes in III–V semiconductor quantum wells and superlattices

In this paper we review the radiative recombination processes occurring in semiconductor quantum wells and superlattices under different excitation conditions. We consider processes whose radiative efficiency depends on the photogenerated density of elementary excitations and on the frequency of the exciting field, including luminescence induced by multiphoton absorption, exciton and biexciton radiative decay, luminescence arising from inelastic excitonic scattering, and electron-hole plasma recombination.

Semiconductor quantum wells are ideal systems for the investigation of radiative recombination processes at different carrier densities owing to the peculiar wavefunction confinement which enhances the optical non-linearities and the bistable behaviour of the crystal. Radiative recombination processes induced by multi-photon absorption processes can be studied by exciting the crystal in the transparency region under an intense photon flux. The application of this non-linear spectroscopy gives direct access to the excited excitonic states in the quantum wells owing to the symmetry properties and the selection rules for artificially layered semiconductor heterostructures.

Different radiative recombination processes can be selectively tuned at exciting photon energies resonant with real states or in the continuum of the conduction band depending on the actual density of photogenerated carriers. We define three density regimes in which different quasi-particles are responsible for the dominant radiative recombination mechanisms of the crystal: (i) The dilute boson gas regime, in which exciton density is lower than 10¹⁰ cm^-2. Under this condition the decay of free and bound excitons is the main radiative recombination channel in the crystal. (ii) The intermediate density range (n < 10¹¹ cm^-2) at which excitonic molecules (biexcitons) and inelastic excitonic scattering processes contribute with additional decay mechanisms to the characteristic luminescence spectra. (iii) The high density range (n ?10¹² cm^-2) where screening of the Coulomb interaction leads to exciton ionization. The optical transitions hence originate from the radiative decay of free-carriers in a dense electron-hole plasma.

The fundamental theoretical and experimental aspects of the radiative recombination processes are discussed with special attention to the GaAs/Al _x Ga_1-x As and Ga _x In_1-x As/Al _y In_1-y As materials systems. The experimental investigations of these effects are performed in the limit of intense exciting fields by tuning the density of photogenerated quasi-particles and the frequency of the exciting photons. Under these conditions the optical response of the quantum well strongly deviates from the well-known linear excitonic behaviour. The optical properties of the crystal are then no longer controlled by the transverse dielectric constant or by the first-order dielectric susceptibility. They are strongly affected by many-body interactions between the different species of photogenerated quasi-particles, resulting in dramatic changes of the emission properties of the semiconductor.

The systematic investigation of these radiative recombination processes allows us to selectively monitor the many-body induced changes in the linear and non-linear optical transitions involving quantized states of the quantum wells. The importance of these effects, belonging to the physics of highly excited semiconductors, lies in the possibility of achieving population inversion of states associated with different radiative recombination channels and strong optical non-linearities causing laser action and bistable behaviour of two-dimensional heterostructures, respectively.     

Cathodoluminescence of iodine dimers in KCl:I crystals

Radiative characteristics of localized exciton states in a KCl:I crystal have been studied in the temperature range 27–200 K by pulsed optical spectroscopy with nanosecond-range time resolution. Besides the bands investigated earlier in KCl:I crystals at impurity concentrations above 0.1 mol %, a strong band peaked at 3.8 eV was detected. The temperature dependences of the decay times, amplitude values of the intensity, and light sums of the 3.8-and 3.4-eV bands were studied. These bands are shown to originate from radiative decay of localized excitons bound to the impurity dimers.     

Two-photon transitions to exciton states in semiconductors

We consider the gauge invariance of the two-photon transition rate from the crystal ground state to exciton states in semiconductors in the framework of the Wannier model. We show that the non-locality correction in the velocity gauge is essential to preserve the gauge invariance. As a numerical example, we calculate in the length and in the velocity gauge the transition rates for the two-photon direct creation of 2p excitons in a two-band semiconductor.     

Exciton condensation in coupled quantum wells

Bound electron-hole pairs—excitons—are Bose particles with small mass. Exciton Bose-Einstein condensation is expected to occur at a few degrees Kelvin—a temperature many orders of magnitude higher than for atoms. Experimentally, an exciton temperature well below 1 K is achieved in coupled quantum well (CQW) semiconductor nanostructures. In this contribution, we review briefly experiments that signal exciton condensation in CQWs: a strong enhancement of the indirect exciton mobility consistent with the onset of exciton superfluidity, a strong enhancement of the radiative decay rate of the indirect excitons consistent with exciton condensate superradiance, strong fluctuations of the indirect exciton emission consistent with critical fluctuations near the phase transition, and a strong enhancement of the exciton scattering rate with increasing concentration of the indirect excitons revealing bosonic stimulation of exciton scattering. Novel experiments with exciton condensation in potential traps, pattern formation in exciton system and macroscopically ordered exciton state will also be reviewed briefly.     

Surface plasmons mediated energy transfer from a semiconductor quantum well to an organic overlayer

We consider the resonant energy transfer from a two-dimensional Wannier exciton (donor) to a Frenkel exciton of a molecular crystal overlayer (acceptor) when the active media are separated by a metallic layer, possibly an electrode. We characterize the effect of the surface plasmon on this process. Using realistic values of material parameters, we show that it is possible to increase the transfer rate within typically a factor of 5, with a 1.25 efficiency enhancement (up to a factor of 44 with ten times larger efficiency according to geometrical configuration). Foreseeing applications to light emitting diode, we then take into account the quenching of the organic luminescence due to the proximity to the metal. The latter is significant and affect negatively the total internal efficiency that we discuss for different geometries.     

Bragg quantum wells in weak confinement regime

The optical properties of Bragg quantum wells are studied for exciton confinement under center-of-mass quantization. A variational model of Wannier exciton envelope function, that embodies the correct boundary conditions for center-of-mass, is adopted for calculation. The present non-adiabatic exciton model is compared with adiabatic results and with heuristic “hard sphere” model. The radiative self-energy of a single-quantum well (SQW) and multi-quantum wells (MQWs) are computed in the semiclassical framework, and in effective mass approximation, by self-consistent solution of Schroedinger and Maxwell equations. This microscopic solution is free from “fitting” parameter values, except for the non-radiative broadening, and also the exciton dead-layer and the additional boundary condition are not taken ad hoc, but come coherently from the variational principle and self-consistent Schroedinger-Maxwell solution. Dispersion curves of exciton-polariton propagating in a MQW, under Bragg condition, are studied by selected numerical examples. The case of optical gap in correspondence of higher excited states is studied, and, moreover, the interesting effect of gap enhancement or inhibition, in correspondence of non-resonant Bragg energy, will be addressed.     

Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers.By measuring the exciton decay time as a function of the monitored emission energy at different temperatures,we have found unusual behaviour of the energy dependence in the PL decay process. At low temperature, the measured PL decay time increases with the emission energy. It decreases with the emission energy at 200K, and remains nearly constant at the intermediate temperature of 12OK. We have studied the dot size effect on the radiative recombination time by calculating the temperature dependence of the exciton recombination lifetime in quantum dots, and have found that the observed behaviour can be well correlated to the exciton localization in quantum dots. This suggestion is further supported by steady state PL results.     

Temperature dependence of radiative recombination in CdSe quantum dots with enhanced confinement

We studied in details the recombination dynamics and its temperature dependence in epitaxially grown neutral CdSe/ZnSSe quantum dots with additional wide-band gap MgS barriers. Such design allows to preserve a very high quantum yield and track the radiative recombination dynamics up to room temperature. A fast initial decay of ∼0.6 ns followed by a slow decay with a time constant ∼30–50 ns is observed at low temperature T < 50 K. The fast decay gradually disappears with increasing temperature while the slow decay shortens and above 100 K predominantly a single-exponential decay is observed with a time constant ∼1.3 ns, which is weekly temperature dependent up to 300 K. To explain the experimental findings, a two-level model which includes bright and dark exciton states and a temperature dependent spin-flip between them is considered. According to the model, it is a thermal activation of the dark exciton to the bright state and its consequent radiative recombination that results in the long decay tail at low temperature. The doubling of the decay time at high temperatures manifests a thermal equilibrium between the dark and bright excitons.     

Recombination dynamics of free and bound excitons in bulk GaN

We report new data on the transient photoluminescence behaviour of free and donor bound excitons in high quality bulk GaN material grown by HVPE. With 266 nm photoexcitation the no-phonon free exciton has a short decay time, about 100 ps at 2 K, assigned to nonradiative surface recombination. The LO replicas of the free exciton have a much longer decay at 2 K, about 1.4 ns, believed to be a lower bound for the bulk radiative lifetimes of the free excitons at 2 K. The donor bound exciton no-phonon lines exhibit a rather short (about 300 ps) nonexponential decay at 2 K, which appears to be dominated by a scattering process. The corresponding LO replicas and the two-electron transitions have a much longer decay. From the latter, the lower bound of the radiative lifetime of the O- and Si-bound excitons are 1800 ps and 1100 ps, respectively.     

电子-声子作用对卤化铊中Wannier激子结合能的影响

一些作者对卤化铊中Wannier激子的结合能所作的计算值比实验值大一个数量级。我们用过去得到的电子-空穴有效作用势,计算了卤化铊中Wannier激子的结合能,比其他作者所得的结果有了很大的改进。     

Radiative and non-radiative relaxation of excitons in strain-compensated quantum dots

We have investigated the population dynamics of excitons in strain-compensated InAs quantum dots (QDs) using a pump–probe technique under resonant excitation. Precise control of polarization directions of incident pulses enabled us to selectively estimate population lifetimes for two orthogonally polarized exciton ground states according to polarization selection rules. Measured decay times of the probe transmissions were highly dependent on the polarization directions of the exciton states. We found that the ratio of the decay times for the orthogonally polarized states is in quantitative agreement with the ratio of square of the transition dipole moments. This indicates that radiative recombination processes have a dominant effect on the population dynamics and that non-radiative and spin relaxations are negligible in our QDs. As a result, we can estimate the radiative lifetimes to be 1.0±0.1 and 1.7±0.2 ns for orthogonally polarized exciton ground states.     

强耦合多原子极性晶体中的表面激子

本文研究多原子极性晶体中表面激子的性质.采用线性组合算符和拉格朗日乘子法,导出强耦合多原子极性晶体中表面激子的有效哈密顿量,得到了强耦合表面激子的重正化质量.     

Propagation of quasi-two dimensional exciton polaritons in a quantum well waveguide

The propagation of exciton polaritons in an optical waveguide with a quantum well is studied. Spatial dispersion of the excitons causes the wave vector of the exciton polaritons to split between waveguide and exciton modes at resonance. The magnitude of this splitting is determined by the radiative decay parameter of excitons with corresponding polarization in the quantum well. The group velocity of the waveguide exciton polaritons in the resonance region can be three or four orders of magnitude lower than the speed of light in vacuum. Fiz. Tverd. Tela (St. Petersburg) 40, 362–365 (February 1998)