Der Oberflächeneinfluß auf die Polarisation eines Dielektrikums

From a microscopic model of a dielectric crystal with a plane surface the polarization being the response to an external applied electric field is calculated. For a solid dielectric with a cubic crystal structure and with a surface whose Miller indices are (1, 0, 0) there is no great influence of the surface on the uniform polarization; for other orientations of plane surfaces and for other crystal structures an oscillating polarization near the surface is found.     

Capacitance of an elliptical disk on a semi-infinite dielectric material

Using an integral transform, the mixed boundary value problem of a conducting, elliptical disk on a dielectric half-space in an electric field is reduced to the solution of an integral equation. An analytical expression of the electric system capacitance is derived, which is a function of the eccentricity of the elliptical disk. The electric charge and electric stress distribute non-uniformly over the surface of the elliptical disk and display local singularities at the edge of the elliptical disk. The square root singularity of the electric field at the edge of the elliptical disk leads to the divergent of the resultant force on the elliptical disk, which is physically unrealistic. There likely exist geometrical constraint and/or field constraint to limit the presence of the square root singularity of the electric field. For any symmetric conductor in an infinite space that consists of air (vacuum) and a semi-infinite dielectric material with symmetric plane being in the interface between the air and the dielectric material, the electric potential in the space is independent of the dielectric constant of the dielectric material.     

Spatial dependence of the local field enhancement in dielectric shell coated silver nanospheres

The dependence of the local field factor around dielectric shell coated silver nanospheres was investigated by theoretical calculation as a function of the spatial distance. The local field factors in the dielectric shell are sensitive to the distance from particle center and shell thickness. When the shell dielectric constant is greater than that of surrounding medium, the maximum of local field factor at inner surface of the shell red shift and increases nonlinearly with increasing the shell thickness. On the contrary, when shell dielectric constant is less than that of surrounding medium, increasing the shell thickness leads the maximum of local field factor at inner surface blue shifts and decreases nonlinearly. However, with increasing the shell thickness, the maximum of local field factor at exterior surface of the shell always decrease nonlinearly. Furthermore, with increasing shell thickness, all these variations get gentle approach to a constant value when the shell thickness is two times of the core radius. When the core and shell diameter have fixed values, the local field factors in dielectric shell decrease with increasing the distance from particle center, but the peak position is not sensitive to the distance.     

On the dielectric theory of a crystalline slab of point molecules

We discuss the dielectric response of a crystalline slab of point molecules to an incident plane electromagnetic wave. The slab is assumed to be made up of non-polar, polarizable molecules (a) lying at points of a simple cubic lattice and (b) interacting only via the electromagnetic field. Expressions for the dispersion relations, polarisation and electric fields and the transmission coefficient are derived. Conditions under which a point dielectric equation of state holds are obtained. This simple system exhibits three resonances near the transverse optic frequency.     

Effects of CNT inclusions on structure and dielectric properties of PVDF/CNT nanocomposites

ABSTRACT

The effects of multiwall carbon nanotube (CNT) inclusions on the crystalline structure of poly(vinylidene fluoride) (PVDF), and on the dielectric properties of PVDF/CNT nanocomposites (NCs), prepared by melt mixing, were investigated by employing X-ray diffraction, differential scanning calorimetry, and dielectric spectroscopy techniques. Our results imply that, in the NCs, the formation of β-phase crystals depends on specific compression treatment in the melt and fast cooling. Dielectric measurements on NCs, with CNT concentrations below the electrical percolation threshold, reveal that the dielectric strength of the two relaxation processes in the amorphous phase and dielectric permittivity, ?′, measured within the broad temperature range from ?150 °C to 60 °C, increase strongly with increasing CNT concentration. This enhancement of amorphous PVDF polarizability has been attributed to the increase of the local electric field, due to local polarization generated at the surface of conductive inclusions/CNT clusters.     

Surface model for field emission processes

The processes of field electron emission from solids and field ion production at surfaces are well understood for plane emitting surfaces. The actual surfaces are not plane on an atomic scale and it is worthwhile to develop a way to treat deviations from a flat surface quantitatively, at least to some extent. In this paper the model of a hemispherical projection on a plane surface is set up, as an approximation to the way that an atom projects from the background of a crystalline surface. It is expected that the model will be valuable in analyzing various field emission processes. Application is made to the resolving power of the field ion microscope.     

GaAs电介质表面对剥离电子通量分布影响的数值研究

利用半经典开轨道理论,研究了GaAs电介质表面对氢负离子在磁场中的光剥离干涉图样的作用,推导并计算了本体系下的光剥离电子流通量,主要研究GaAs电介质表面到离子的距离不同对电子通量的影响。结果表明,电介质表面到离子的距离可以改变电子通量分布中的振荡结构,影响探测平面上形成的干涉图样的分布。因此,可以通过改变电介质表面到离子的距离来调控剥离电子的通量和干涉图样分布。     

Effect of the illumination length on the statistical distribution of the field scattered from one-dimensional random rough surfaces: analytical formulae derived from the small perturbation method

We consider a dielectric plane surface with a local cylindrical perturbation illuminated by a monochromatic plane wave. The perturbation is represented by a random function assuming values with a Gaussian probability density with zero mean value. Outside the perturbation zone, the scattered field can be represented by a superposition of a continuous spectrum of outgoing plane waves. The stationary phase method leads to the asymptotic field, the angular dependence of which is given by the scattering amplitudes of the propagating plane waves. The small perturbation method applied to the Rayleigh integral and the boundary conditions gives a first-order approximation of the scattering amplitudes. We show that the real part and the imaginary part of the scattering amplitudes are Gaussian stochastic variables with zero mean values and unequal variances. The values of variances depend on the length of the perturbation zone. In most cases, the probability density function for the amplitude is a Hoyt distribution and the phase is not uniformly distributed between -π and π. The standard Rayleigh and uniform distributions are obtained for special values of the length and in the case of an infinite illumination length.     

Effect of the illumination length on the statistical distribution of the field scattered from one-dimensional random rough surfaces: analytical formulae derived from the small perturbation method

We consider a dielectric plane surface with a local cylindrical perturbation illuminated by a monochromatic plane wave. The perturbation is represented by a random function assuming values with a Gaussian probability density with zero mean value. Outside the perturbation zone, the scattered field can be represented by a superposition of a continuous spectrum of outgoing plane waves. The stationary phase method leads to the asymptotic field, the angular dependence of which is given by the scattering amplitudes of the propagating plane waves. The small perturbation method applied to the Rayleigh integral and the boundary conditions gives a first-order approximation of the scattering amplitudes. We show that the real part and the imaginary part of the scattering amplitudes are Gaussian stochastic variables with zero mean values and unequal variances. The values of variances depend on the length of the perturbation zone. In most cases, the probability density function for the amplitude is a Hoyt distribution and the phase is not uniformly distributed between –π and π. The standard Rayleigh and uniform distributions are obtained for special values of the length and in the case of an infinite illumination length.     

Induced polarization charge density and microscopic local field for a covalent semiconductor

A model calculation of the static macroscopic dielectric function is presented for diamond in which the consequence of the localised and plane wave features of the band structure on the polarizability are separated. Microscopic local field and polarization charge density induced by an uniform external field are analyzed in real space. Although the macroscopic dielectric function is essentially intensitive to small changes in the parameters of the model, microscopic quantities can be rather sensitive suggesting that one should be carefull in constructing a microscopic dielectric matrix to be used in calculating, for instance, phonon frequencies.     

Local field corrections in trigonal Se

The inverse dielectric tensor ?^-1₀₀(q) in the static limit isevaluated in crystalline Se along two symmetry directions, by using a proper model Hamiltonian describing the covalent bond and modified sp³ orbitals as basis states. By comparing the results in diagonal approximation with these obtained including the off diagonal elements (ODE) of the dielectric matrix (DM) it is found that the local field corrections are very large and essential to reproduce the experimental dielectric tensor.     

Electric fields and surface charge in a thin-film ferroelectric-dielectric switchable structure that were determined with a spectral probe

A new method is proposed to study the macroscopic ac fields in the elements of thin-film ferroelectric-dielectric heterostructures during their electric switching. For this purpose, the local field surrounding dielectric molecules is measured. It is important that the dielectric has a characteristic very narrow molecular absorption band, which is used as an electric-field probe. The heterostructure under study consists of a glass substrate, a transparent electrode, a 170-nm-thick layer of polymer ferroelectric, a 40-nm-thick dielectric layer, and a semitransparent electrode. Both functional layers are grown by the Langmuir-Blodgett method. An ac electric field is applied to the electrodes, and the local field having appeared in the dielectric is measured by the electroabsorption method. With allowance for the Lorentz factor, the local field is easily converted into the macroscopic field in the dielectric layer and, then, in the ferroelectric layer. The classical Sawyer-Tower scheme is used as an additional tool to determine the surface charge to be switched at the dielectric-ferroelectric interface.     

Grazing‐incidence X‐ray diffraction study of rubrene epitaxial thin films

The growth of organic semiconductors as thin films with good and controlled electrical performances is nowadays one of the main tasks in the field of organic semiconductor‐based electronic devices. In particular it is often required to grow highly crystalline and precisely oriented thin films. Here, thanks to grazing‐incidence X‐ray diffraction measurements carried out at the ELETTRA synchrotron facility, it is shown that rubrene thin films deposited by organic molecular beam epitaxy on the surface of tetracene single crystals have the structure of the known orthorhombic polymorph, with the (2 0 0) plane parallel to the substrate surface. Moreover, the exact epitaxial relationship between the film and the substrate crystalline structures is determined, demonstrating the presence of a unique in‐plane orientation of the overlayer.     

指数型分层介质粗糙面电磁波透射系数的特征

根据瑞利假设,运用微扰法近似,将透射场按平面波展开,对坐标进行傅里叶变换,研究了平面波入射时的透射散射现象,避免了繁琐的推导和证明;采用指数型粗糙面模拟实际的介质粗糙面,结合其功率谱导出了透射系数计算公式。数值计算结果表明:中间介质介电常数的实部越大,透射系数越大,虚部越大,透射系数越小;中间介质厚度越大,透射系数越小;粗糙面均方根越大,透射系数越大;粗糙面相关长度越大,透射系数越大;透射系数随入射波频率振荡地增大。     

Method of optical near-field microscopy of foreign atoms on the surface of nonabsorbing dielectrics upon Brewster reflection of light

It is shown that, by means of measuring the frequency dependence of the ellipticity of light reflected at the Brewster angle from the plane surface of a nonabsorbing dielectric, one can reveal on it nanostructural objects consisting of foreign atoms or molecules. They manifest themselves by the presence of size resonances, arising in these structures in a field of optical radiation because of the dipole-dipole interaction of the atoms (molecules). A theoretical justification of the experimental technique that takes into account the presence of a transition layer on the surface of the dielectric is proposed.     

Effect of the direction of biasing field on magnetostatic volume wave delays

An investigation of the effect of the direction of a dc biasing field on the magnetostatic volume wave delays in YIG sandwiched between two ground planes has been made. Specifically, the magnetic field has been assumed to be arbitrary in three planes: (a) forward volume wave to backward volume plane; (b) forward volume wave to surface wave plane; (c) backward volume wave to surface wave plane. A general dispersion relation has been derived. The numerical results indicate that delays can be controlled by the direction of the dc magnetic field. The effect of the thickness of the dielectric on the delay characteristics of magnetostatic backward volume waves has also been studied. The present study shows that a suitable filter can be designed, whose bandwidth may be varied by rotating the direction of the magnetic field.     

Effect of modifying a methyl siloxane-based dielectric by a polymer thin film for pentacene thin-film transistors

We report on the fabrication of pentacene thin-film transistors (TFTs) utilizing a spun methyl siloxane-based spin-on-glass (SOG) dielectric and show that these devices can give a similar electrical performance as achieved by using pentacene TFTs with a silicon dioxide (SiO₂) dielectric. To improve the electrical performance of pentacene TFTs with the SOG dielectric, we employed a hybrid dielectric of an SOG/cross-linked poly-4-vinylphenol (PVP) polymer. The PVP film was deposited onto the spun SOG dielectric prior to pentacene evaporation, resulting in an improvement of the saturation field effect mobility (μ_sat) from 0.01 cm²/(V s) to 0.76 cm²/(V s). The good surface morphology and the matching surface energy of the SOG dielectric that was modified with the polymer thin film allow the optimized growth of crystalline pentacene domains whose nuclei are embedded in an amorphous phase.     

Frequency Selective Characteristics of Dielectric Periodic Structures for Millimeter Wave Application

In this paper, the frequency selective reflection characteristics of dielectric periodic structures for the oblique incidence of a plane wave are analyzed by a method which combines the multimode network theory with the rigorous mode matching method. The variations of the total reflection characteristics with the geometric dimensions of the dielectric periodic structures are systematically investigated to develop useful guidelines for the design of the dielectric frequency selective surface. Moreover, the relationship between the related wave phenomenon and the dispersion characteristics of multilayer plane dielectric structure is explained with the theory of plane dielectric waveguide.     

介质覆盖对高阻表面带隙的影响

采用周期矩量法对介质覆盖的高阻表面进行数值分析，绘出其能带结构图，并测试高阻表面加载不同介质时的表面波带隙，对理论分析的结果进行验证，为介质覆盖的高阻表面的设计提供参考. 关键词： 光子带隙 周期结构 覆盖层 高阻表面     

Wave Turbulence of a Liquid Surface in an External Tangential Electric Field

JETP Letters - A direct numerical simulation of the interaction of plane capillary waves on the surface of a liquid dielectric in an external tangential electric field taking into account viscous...