Magnetoelastic Waves in Submicron Yttrium–Iron Garnet Films Manufactured by Means of Ion-Beam Sputtering onto Gadolinium–Gallium Garnet Substrates

A series of equidistant oscillations have been revealed in the transmission spectrum and dispersion law of Damon–Eshbach surface magnetostatic waves (SMSWs) propagating in submicron (200-nm) yttrium–iron garnet (YIG) films manufactured by means of ion-beam sputtering onto gadolinium–gallium garnet (GGG) substrates. These oscillations correspond to the excitation of magnetoelastic waves in the YIG–GGG structure at frequencies of resonant interaction between the surface magnetostatic waves and the elastic shear modes of the wave-guiding YIG–GGG structure. The obtained results show that the studied YIG films are characterized by an efficient magnetoelastic coupling between their spin and elastic subsystems and the matching of acoustic impedances at the YIG–GGG interface, thus providing the possibility to consider the ion-beam sputtering of YIG films onto GGG substrates as a promising technology for the creation of magnonic and straintronic devices.     

Damage induced in garnets by heavy ion irradiations: a study by optical spectroscopies

The damage induced by heavy-ion irradiation has been studied in yttrium iron garnet (Y₃Fe₅O₁₂ or YIG) films, doped with Ca, Tb and Tm, grown by liquid-phase epitaxy on gadolinium gallium garnet (Gd₃Ga₅O₁₂ or GGG) substrates. Irradiations of doped-YIG epitaxial films and GGG substrates with 36-MeV ¹⁸³W and 12-MeV ¹⁹⁷Au ions were applied for fluences between 1 × 10¹³ and 3 × 10¹⁵ cm^–2 near room temperature. The radiation damage was monitored by micro-Raman spectroscopy and UV–visible optical absorption spectroscopy. Raman spectra revealed that amorphisation was achieved in YIG for both ions, whereas a high lattice disorder was induced in GGG without reaching amorphisation for the Au ion irradiation. Raman spectra also showed that a major damage of the tetrahedral sites was induced in GGG, as previously found for YIG. It is concluded that with such ions reaching the stopping power threshold of track formation in YIG and GGG the observed rate of amorphisation may result from a combination of electronic and nuclear energy losses as calculated using the unified thermal spike model.     

Garnet films for micron and submicron magnetic bubbles with low damping constants

Two types of films for small bubbles have been grown without making use of the rare earth ions which are the cause of increased damping of the Bloch wall motion in the usual small bubble film compositions. Firstly, Bi-containing films were grown on (111) orientated GGG for 1 μm bubbles and secondly, Mn³⁺-containing films were grown under compression on (100) orientated GGG substrates for 0.4 μm bubbles. The damping constants in these films have been obtained by measuring the FMR line width. The correlation between the damping of the FMR and of the Bloch wall motion is determined in films with bubble diameters of, 2 to 4 μm. The damping constants are a factor 10 to 100 smaller than in the existing device films for small bubbles.     

Exchange coupling in ultrathin epitaxial yttrium iron garnet films

Magnetic exchange coupling has been observed for ultrathin films of yttrium iron garnet (Y₃Fe₅O₁₂ or YIG). Single-crystalline YIG films were prepared on yttrium aluminium garnet (Y₃Al₅O₁₂ or YAG) substrates by pulsed laser deposition. (111) and (110) oriented substrates were used. Film thicknesses were varied from 180 ? to 4600 ?. Epitaxial growth of YIG on YAG was obtained in spite of the lattice mismatch of 3%. Magnetic hysteresis loops recorded for ultrathin YIG films have a “bee-waist” shape and show a coupling between two different magnetic phases. The first phase is magnetically soft YIG. A composition study by secondary ion mass spectroscopy shows the second phase to be Y₃Fe_5-xAl_xO₁₂ due to the interdiffusion of Fe and Al at the film/substrate interface. This compound is known to be magnetically harder and to have weaker magnetization than YIG. The coupling of the two phases leads to a hysteresis loop displacement at low temperatures. This displacement varies differently with film thickness for two substrate orientations. Assuming an interfacial coupling, the maximal interaction energy is estimated to be about 0.17 erg/cm² at 5 K for (111) oriented sample. Received 3 June 2002 / Received in final form 7 October 2002 Published online 27 January 2003 RID="a" ID="a"Presently at LPM, Université H. Poincaré, BP 239, 54506 Vandœuvre-lès-Nancy e-mail: popova@lpm.u-nancy.fr     

Curie temperatures of Y3Fe5O12/Gd3Fe5O12 superlattices

The magneto-optical Kerr effects (MOKE) of epitaxial Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ (YIG/GGG) garnet superlattices grown on (1 1 1)GGG previously by pulsed laser deposition (PLD) were measured. A series of superlattices were investigated with the thickness of the ferrimagnetic YIG layer varied from six unit cells to only one unit cell while keeping the Curie paramagnetic GGG fixed at one unit cell. It was demonstrated that the ellipsometric technique employing photoelastic modulators (PEM) is sensitive enough to measure the MOKE signals of these ultrathin oxide samples. The Curie temperatures, determined by MOKE, are fit with a power law, yielding a shift exponent λ = 3.1 ± 1.2.     

Nd3+:GGG and Cr4+:GGG epitaxial films for neodymium lasers

An efficient technology was developed for growing the gadolinium gallium garnet (GGG) single-crystal films doped with Nd³⁺ or Cr and Ca ions. The films with thickness up to 100 μm have been grown by liquid-phase epitaxy method on undoped GGG substrates of small and big sizes (5–8 mm and up to 76 mm in diameter, respectively). The dependence of absorption, luminescence spectra and optical losses at the wavelength of 1 μm on growth temperature and melt-solution composition was studied. We demonstrated that Cr⁴⁺ centers have been implemented in epitaxial films and these films may be used as passive Q-switches for laser systems.     

ZnO-Si不同退火条件对生长ZnSe薄膜的影响

研究了作为缓冲层的ZnO薄膜在不同的退火时间、退火温度下退火对Si衬底上生长ZnSe膜质量的影响。当溅射有ZnO膜的Si(111)衬底的退火条件变化时，从X射线衍射谱（XRD）和光致发光谱（PL）中可见，ZnSe(111)膜的晶体质量有较大的变化。变温的PL谱表明，Si衬底上生长的具有ZnO缓冲层的ZnSe膜的近带边发射峰起源于自由激子发射。     

氧化钙薄膜中缺陷诱导的高居里温度铁磁性研究

通过脉冲激光沉积在(111)取向钇稳定的氧化锆(YSZ)衬底上制备了氧化钙(CaO)薄膜.室温下磁滞回线的实验观测数据表明CaO薄膜具有明显的铁磁性.X射线衍射和X射线光电子能谱分析表明,CaO薄膜为(111)取向,没有杂质相.在高真空条件下生长和退火的CaO薄膜都表现出铁磁性磁化行为,而在相应的CaO靶材上没有检测到...     

The comparison between CdS thin films grown on Si(111) substrate and quartz substrate by femtosecond pulsed laser deposition

Two kinds of cadmium sulfate (CdS) thin films have been grown at 600 °C onto Si(111) and quartz substrates using femtosecond pulsed laser deposition (PLD). The influence of substrates on the structural and optical properties of the CdS thin films grown by femtosecond pulsed laser deposition have been studied. The CdS thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy. Although CdS thin films deposited both on Si(111) and quartz substrates were polycrystalline and hexagonal as shown by the XRD , SEM and AFM results, the crystalline quality and optical properties were found to be different. The size of the grains for the CdS thin film grown on Si(111) substrate were observed to be larger than that of the CdS thin film grown on quartz substrate, and there is more microcrystalline perpendicularity of c-axis for the film deposited on the quartz substrate than that for the films deposited on the Si substrate. In addition, in the PL spectra, the excitonic peak is more intense and resolved for CdS film deposited on quartz than that for the CdS film deposited on Si(111) substrate. The LO and TO Raman peaks in the CdS films grown on Si(111) substrate and quartz substrate are different, which is due to higher stress and bigger grain size in the CdS film grown on Si(111) substrate, than that of the CdS film grown on the amorphous quartz substrate. All this suggests that the substrates have a significant effect on the structural and optical properties of thin CdS films. PACS 81.15.Fg; 81.05.Ea; 78.20.-e; 78.67.-n; 42.62.-b     

Optical characterization of thermal-stress induced by spin waves in thin-film ferrimagnetic structures

It is shown that intense spin-dipole waves (SDWs) excited in thin yttrium iron garnet (YIG) films induce an in-plane thermal stress (σ) of 1-2 MPa in a YIG/GGG structure (where GGG is gadolinium gallium garnet). In YIG/GGG with normal magnetization, σ shifts its ferromagnetic resonance frequency by ≈1 MHz, which is comparable to the linewidth of the absorption curve of YIG/GGG resonators. The effect was characterized by an optical technique that detects σ in the GGG substrate. It was also demonstrated that this effect can be used for the optical-microwave spectroscopy of spin waves in thin ferromagnetic films, by using thermal mapping of SDWs in the substrate. We have shown that this opens up the possibility of determining the contribution of the two-particle magneto-elastic interaction to the microwave heating of the sample.     

The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy

Yttrium iron garnet (YIG) films possessing both perpendicular magnetic anisotropy (PMA) and low damping would serve as ideal candidates for high-speed energy-efficient spintronic and magnonic devices. However, it is still challenging to achieve PMA in YIG films thicker than 20 nm, which is a major bottleneck for their development. In this work, we demonstrate that this problem can be solved by using substrates with moderate lattice mismatch with YIG so as to suppress the excessive strain-induced stress release as increasing the YIG thickness. After carefully optimizing the growth and annealing conditions, we have achieved out-of-plane spontaneous magnetization in YIG films grown on sGGG substrates, even when they are as thick as 50 nm. Furthermore, ferromagnetic resonance and spin pumping induced inverse spin Hall effect measurements further verify the good spin transparency at the surface of our YIG films.     

Surface morphological changes and magnetic properties of Sc-substituted Y3Fe5O12 epitaxial films deposited on the GGG substrate

Sc-doped YIG films were grown on (1 1 1) oriented GGG crystalline substrate with disorientation angle within the range 0-25′. Sc³⁺ ion substitution was varied within the range 0.25-0.3 per formula unit. The films demonstrate different types of surface morphology versus film growth rate and substrate disorientation. Conditions for existence of these types of the surface morphology were defined. The field dependence of magnetic susceptibility at magnetization reversal in film plane and Faraday rotation at wavelength 633 nm for a magnetic field applied in perpendicular direction were measured to characterize the films grown. Films with “mirror-like” surface demonstrate a planar magnetization at room temperature.     

Influence of target morphology on droplet emission and thickness profiles with pulsed laser deposited bismuth films

The influence of target morphology on the density of droplets and on thickness profiles was studied on thin bismuth films prepared by pulsed laser deposition. Films were deposited at room temperature on glass substrates from a Nd:YAG laser working at a wavelength of 532 nm. Two parameters were taken into account: the target diameter and the method of scanning the laser beam on the target. Three different laser beam scans have been simulated and tested afterwards. The quality of the films, as determined by scanning electron microscopy, can be improved by working with large targets and with appropriate scanning of the laser beam.     

Effects of heating rate on the magneto-optical properties of bismuth-substituted yttrium iron garnet films prepared via modified metal-organic decomposition

This work investigated the effects of heating rate and annealing on the magneto-optical properties of bismuth-substituted yttrium iron garnet (Bi-YIG) thin films on glass and (111)-oriented single-crystalline gadolinium gallium garnet (GGG) substrates fabricated by metal-organic decomposition (MOD). We modified the MOD method by eliminating the pre-annealing process. We performed annealing at various temperatures to determine the optimal temperature for obtaining the Bi-YIG phase. We then annealed at the optimized temperature using various heating rates. The optimal conditions were annealing for 1 h at 750 °C at a heating rate of 30 °C/min on GGG to obtain highly crystallized fine grains. The Faraday rotation for this film was about −10.5°/μm. The optimized heating rate enhanced the magneto-optical properties due to improved crystallinity and saturated magnetization. The Bi-YIG thin films prepared by this prescribed MOD method exhibited excellent magneto-optical performance and are potential candidates for applications in optical devices.     

Conversion electron Mössbauer spectroscopic study of YIG substituted with Bi,Ti, Ga and La

YIG films, substituted with Bi, Ti, Ga and La, were grown on a (111) plane of Gd₃Ga₅O₁₂ or (Gd, Ca)₃(Ga, Mg, Zr)₅O₁₂ by a liquid phase epitaxial method. With the increase of the concentration of Bi atoms, which are substituted at 24c sites of YIG, the magnetic hyperfine fields at 16a and 24d Fe sites increased and the direction of magnetic moments changed from parallel to 45° to the (111) plane. With the increase of Ga concentration, the hyperfine fields at 16a and 24d Fe sites decreased. The hyperfine interaction and the substitution effect of YIG films are discussed.     

Epitaxial lithium fluoride films grown by pulsed laser deposition

Lithium fluoride (LiF) films have been prepared on LaAlO₃ (LAO), MgO, Si and TiN buffered Si substrates using a pulsed laser deposition (PLD) technique. Their surface morphology and structural qualities were studied by using scanning electron microscopy (SEM) and X-ray diffractometry (XRD). Those films deposited on (100)MgO and (100)TiN buffered Si exhibited (200)_LiF||(200)_MgOand(200)_LiF||(200)_TiN||(200)_Si epitaxial relationships, respectively. These results suggest that LiF films can be epitaxially grown on lattice match substrates and, for the first time, on (100)Si via a buffer layer. LiF grown on bare (100)Si and (100)LAO substrates, however, yielded films of (100) preferred orientation only. Lattice mismatch and thermal effects are invoked to explain these observations. The surfaces of the LiF films are very rough and covered with large globules due to splashing of molten droplets from the target. In order to remedy such deficiencies we used a shadow mask to reduce both the size and the number of these globules while maintaining the heteroepitaxial properties. As a result optically smooth LiF films of excellent structural quality are produced. PACS 78.55.FV; 81.15.FG; 68.55.JK     

Effect of oxidation dynamics on the film characteristics of Ce:YIG thin films deposited by pulsed-laser deposition

Thin films with different compositions of Ce-substituted yttrium iron garnet (Ce:YIG (Y₂CeFe₅O₁₂)), Ga-doped Ce:YIG (Ce:Ga:YIG (Y₂CeFe_4.25Ga_0.75O₁₂)), and Gd-doped Ce:YIG (Ce:Gd:YIG (Y_1.6CeGd_0.4Fe₅O₁₂)) were deposited on gadolinium gallium garnet (GGG (Gd₃Ga₅O₁₂)) substrates in O₂ or Ar background gas by pulsed-laser deposition (PLD) technique. Crystalline films were obtained at a lower O₂ gas pressure of 20 mTorr or at higher Ar gas pressures of more than 100 mTorr. In addition, the behavior of YO molecules was visualized by two-dimensional laser-induced fluorescence (2D-LIF), in order to investigate the oxidation dynamics in the ablation plume. The oxidation dynamics and the crystallinity had close correlation.     

气相输运法制备ZnO薄膜(英文)

运用气相输运技术在不同的衬底上制备ZnO薄膜,同时对这些ZnO薄膜的表面形貌、晶体结构和光学特性进行表征。在扫描电子显微镜图像上可以看到,相比没有镀金的Si衬底,ZnO纳米颗粒在镀金的Si衬底上的生长尺寸较大。X射线衍射测试结果表明,在Si(111)和Si(100)衬底上生长的ZnO薄膜显示出不同的六角纤锌矿结构的衍射峰,但没有出现立方闪锌矿ZnO结构的衍射峰。在镀金的Si衬底上,ZnO薄膜生长取向主要为c轴方向。此外,所有ZnO样品的光致发光谱上均只出现一个狭窄且强的紫外峰,约在389 nm(3.19 eV)波长处。     

不同衬底上Pb(Zr0.52Ti0.48)O3择优取向铁电薄膜的制备和研究

通过MOD法在Si(100)和Pt(111)/Ti/SiO₂/Si基片上制备出LaNiO₃ ( LNO)薄膜.再通过修 正的Sol-gel法，在Pt(111)/Ti/SiO₂/Si,LNO/Si(100)和LNO/Pt/Ti/SiO_{2< /sub>/Si三种衬底上 制备出具有择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜. 经XRD分析表明，L NO薄膜具有(100)择优取向的类钙钛矿结构；PZT薄膜均具有钙钛矿结构，且在Pt(111)/Ti/S iO2/Si衬底上的薄膜以(110)择优取向，在LNO/Pt/Ti/SiO2/Si和LN O/Si(100)衬底上的 薄膜以(100)择优取向.经场发射SEM分析和介电、铁电性能测试表明，在LNO/Si和LNO/Pt/Ti /SiO2/Si衬底上的PZT薄膜的平均粒径、介电常数以及剩余极化强度均比以Pt/T i/SiO2/Si为衬底的薄膜大. 关键词： 3}薄膜')" href="#">LaNiO₃薄膜 PZT铁电薄膜 择优取向 剩余极化强度     

Performance of a low-loss pulsed-laser-deposited Nd:Gd(3) Ga(5)O(12) waveguide laser at 1.06 and 0.94 mum

We report the laser performance of a low-propagation-loss neodymium-doped Gd(3)Ga(5)O(12) (Nd:GGG) waveguide fabricated by pulsed-laser deposition. An 8- mum -thick crystalline Nd:GGG film grown upon an undoped Y(3)Al(5)O(12) substrate lases at 1.060 and 1.062 microm when pumped by a Ti:sapphire laser operating at 740 or 808nm.Using a 2.2% output coupler, we observed a 1060-nm laser threshold of 4mW and a slope efficiency of 20%. Laser action was also achieved, for what we believe is the first time in Nd:GGG, on the quasi-three-level 937-nm transition. With a 2% output coupler at this wavelength a laser threshold of 17mW and a 20% slope efficiency were obtained. This demonstration of low propagation loss combined with the fact that these waveguides have a very high numerical aperture (0.75) makes pulsed-laser-deposited thin films attractive for high-power diode-pumped devices.