Track revelation and optical properties of pentaerythritol tetrakis (allyl carbonate) plastic for application as nuclear track detector: effects of gamma radiations

The etching conditions of an indigenously prepared thin film of pentaerythritol tetrakis(allyl carbonate) (PETAC) were standardised for the use as a nuclear track detector. The optimum etching times in 6?N NaOH at 70°C for the appearance of fission and alpha tracks recorded in this detector from a ²⁵²Cf solid source were found to be 30 min and 1.50?h, respectively. The experimentally determined values for the bulk and track-etch rates for this detector in 6?N NaOH at 70°C were found to be 1.7?±?0.1 and 88.4?±?10.7?µm/h, respectively. From these results, the important track etching properties such as the critical angle of etching, the sensitivity and the fission track registration efficiency were calculated and compared with the commercially available detectors. The activation energy value for bulk etching calculated by applying Arrhenius equation to the bulk etch rates of the detector determined at different etching temperatures was found to be 0.86?±?0.02?eV. This compares very well with the value of about 1.0?eV reported for most commonly used track detectors. The effects of gamma irradiation on this new detector in the dose range of 200–1000?kGy have also been studied using bulk etch rate technique. The activation energy values for bulk etching calculated from bulk etch rates measurements at different temperatures were found to decrease with the increase in gamma dose indicating scission of the detector due to gamma irradiation. The optical band gap of this detector was also determined using UV–visible spectrometry and the value was found to be 4.37?±?0.05?eV.     

Opposite radiators used for thermostabilizing of X-ray detectors of the all-sky monitor to be installed on the ISS

An all-sky monitor (MVN) is an instrument intended for a long-term experiment for measurement of cosmic x-ray background (CXB). It will be installed on the international space station (ISS) surface in 2018. In this instrument four CdTe detectors are used to measure CXB energy spectrum. To obtain accurate spectral measurements with planned accuracy, detectors’ temperature should not deviate by more than two degrees from minus 30?C during the experiment. Thermal stabilization of the detectors is complicated because of strongly variable external thermal conditions on the ISS surface. Influence of variable heat fluxes can be compensated for by using oppositely oriented radiators. In this article we describe the method application in the case of MVN.     

Novel high‐resolution silicon drift detectors

Silicon drift detectors (SDDs) are used as energy‐dispersive detectors for x‐ray fluorescence analysis in commercial systems. Because of the low capacitance of the readout anode, achieved by the device topology and by the integration of the first FET on the chip, noise contributions are very small, allowing good energy resolution at low shaping times and high count rates. Typical energy resolution is better than 147 eV FWHM at 5.9 keV (Mn Kα), at ?10°C. This allows the chips to be cooled with a thermoelectric element, avoiding the use of liquid nitrogen. SDD chips are produced at MPI‐Halbleiterlabor in Munich with different geometries and areas. Recently, a new SDD has been developed which places the anode and the integrated JFET at the margin of the chip where it can easily be shielded from direct irradiation with the use of a collimator. The new layout allows the design of a readout anode with smaller area and therefore reduces the capacitance to values of about 120 fF compared with 200–250 fF with standard SDDs. The result is an improvement in energy resolution down to 128 eV at ?15°C. A second effect is the enhancement of the peak‐to‐background values to 6000 homogeneously across the active area of the detector. Copyright © 2004 John Wiley & Sons, Ltd.     

Comparative certification of secondary-electron multipliers within the ultrasoft X-ray range

The results of studying the band characteristics and the efficiency of recording the secondary-electron multipliers VEU-6 and VEU-GOI (manufactured by the Vavilov State Optical Institute (GOI), St. Petersburg) within the ultrasoft X-ray range are given. The measurements were carried out at the metrological station Kosmos with the use of synchrotron radiation from the storage ring VEPP-4M (Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk) in monochromatic radiation at a photon energy of 268 eV. A strong irregularity in the band characteristics of both VEU-6 and VEU-GOI has been found. Their quantum efficiencies are estimated. The measurements are a continuation of the works on calibration of the equipment of the Space Solar Patrol (developed by GOI) using synchrotron radiation from the VEPP-4M storage ring (project MNTTs no. 2500).     

The electronic and chemical structure of the a-B(3)CO(0.5):H(y)-to-metal interface from photoemission spectroscopy: implications for Schottky barrier heights

The electronic and chemical structure of the metal-to-semiconductor interface was studied by photoemission spectroscopy for evaporated Cr, Ti, Al and Cu overlayers on sputter-cleaned as-deposited and thermally treated thin films of amorphous hydrogenated boron carbide (a-B(x)C:H(y)) grown by plasma-enhanced chemical vapor deposition. The films were found to contain ～10% oxygen in the bulk and to have approximate bulk stoichiometries of a-B(3)CO(0.5):H(y). Measured work functions of 4.7/4.5?eV and valence band maxima to Fermi level energy gaps of 0.80/0.66?eV for the films (as-deposited/thermally treated) led to predicted Schottky barrier heights of 1.0/0.7?eV for Cr, 1.2/0.9?eV for Ti, 1.2/0.9?eV for Al, and 0.9/0.6?eV for Cu. The Cr interface was found to contain a thick partial metal oxide layer, dominated by the wide-bandgap semiconductor Cr(2)O(3), expected to lead to an increased Schottky barrier at the junction and the formation of a space-charge region in the a-B(3)CO(0.5):H (y) layer. Analysis of the Ti interface revealed a thick layer of metal oxide, comprising metallic TiO and Ti (2)O (3), expected to decrease the barrier height. A thinner, insulating Al(2)O(3) layer was observed at the Al-to-a-B(3)CO(0.5):H(y) interface, expected to lead to tunnel junction behavior. Finally, no metal oxides or other new chemical species were evident at the Cu-to-a-B(3)CO(0.5):H(y) interface in either the core level or valence band photoemission spectra, wherein characteristic metallic Cu features were observed at very thin overlayer coverages. These results highlight the importance of thin-film bulk oxygen content on the metal-to-semiconductor junction character as well as the use of Cu as a potential Ohmic contact material for amorphous hydrogenated boron carbide semiconductor devices such as high-efficiency direct-conversion solid-state neutron detectors.     

Measurement of the neutrino mass splitting and flavor mixing by MINOS

Measurements of neutrino oscillations using the disappearance of muon neutrinos from the Fermilab NuMI neutrino beam as observed by the two MINOS detectors are reported. New analysis methods have been applied to an enlarged data sample from an exposure of 7.25×10(20) protons on target. A fit to neutrino oscillations yields values of |Δm(2)|=(2.32(-0.08)(+0.12))×10(-3) eV(2) for the atmospheric mass splitting and sin(2)(2θ)>0.90 (90% C.L.) for the mixing angle. Pure neutrino decay and quantum decoherence hypotheses are excluded at 7 and 9 standard deviations, respectively.     

Substituent effect on electron affinity,gas‐phase basicity,and structure of monosubstituted propargyl radicals and their anions: a theoretical study

The substituent effect of electron‐withdrawing groups on electron affinity and gas‐phase basicity has been investigated for substituted propargyl radicals and their corresponding anions. It is shown that when a hydrogen of the α‐CH₂ group or acetylenic CH in the propargyl system is substituted by an electron‐withdrawing substituent, electron affinity increases, whereas gas‐phase basicity decreases. The calculated electron affinities are 0.95 eV (CH?C? CH₂?), 1.15 eV (CH?C? CHF?), 1.38 eV (CH?C? CHCl?), 1.48 eV (CH?C? CHBr?) for the isomers with terminal CH and 1.66 eV (CF?C? CH₂?), 1.70 eV (CCl?C? CH₂?), 1.86 eV (CBr?C? CH₂?) for the isomers with terminal CX at B3LYP level. The calculated gas‐phase basicities for their anions are 378.4 kcal/mol (CH?C? CH₂:^?), 371.6 kcal/mol (CH?C? CHF:^?), 365.1 kcal/mol (CH?C? CHCl:^?), 363.5 kcal/mol (CH?C? CHBr:^?) for the isomers with terminal CH and 362.6 kcal/mol (CF?C? CH₂:^?), 360.4 kcal/mol (CCl?C? CH₂:^?), 356.3 kcal/mol (CBr?C? CH₂:^?) for the isomers with terminal CX at B3LYP level. It is concluded that the larger the magnitude of electron‐withdrawing, the greater is the electron affinity of radical and the smaller is the gas‐phase basicity of its anion. This tendency of the electron affinities and gas‐phase bacisities is greater in isomers with the terminal CX than isomers with the terminal CH. Copyright © 2009 John Wiley & Sons, Ltd.     

Fabrication and low-temperature photoluminescence spectra of Mn-doped ZnO nanowires

Mn-doped ZnO nanowires have been fabricated through a high temperature vapor-solid deposition process. The low-temperature photoluminescence spectra of the samples show that there are multipeak emissions at the ultraviolet (UV) region (about 3.4?C3.0?eV). The excitonic and phonon-assisted transitions in Mn-doped ZnO nanowires were investigated. The results show that there is an obvious oscillatory structure emission at the UV region under low temperature from 12?C125?K. The oscillatory structure has an energy periodicity about 70?meV and the oscillatory structure is mainly attributed to longitudinal optical (LO) phonon replicas of free excitons?(FX). The multipeak emissions at 12?K are attributed to a donor-bound exciton (DBX, 3.3617?eV), 1LO-phonon replicas of a free exciton (FX-1LO, 3.3105?eV), 2LO-phonon replicas of a free exciton (FX-2LO, 3.2396?eV), and 3LO-phonon replicas of a free exciton (FX-3LO, 3.1692?eV), respectively. The intensity of UV emission and the efficiency of emission from the Mn-doped ZnO nanowires are improved.     

Giant air showers: The problem of events with <Emphasis Type="Italic">E</Emphasis><Subscript>0</Subscript>≥10<Superscript>20</Superscript> eV

The problem of the “upper edge” of the energy spectrum of giant air showers (GASs) with E₀≥10¹⁹ eV is considered. The almost complete absence of GASs with the highest energies (E₀≥10²⁰ eV) at the Yakutsk array and their considerable number at AGASA are discussed in view of the fact that both arrays have similar basic detectors and similar procedures of data processing are being used.     

Thermal annealing of proton tracks with energies of 4 and 6 MeV in CR-39 polymer detectors

In this paper, we study the thermal annealing of proton tracks of 4 and 6 MeV at temperatures ranging from 150 to 240°C in CR-39 polymer detectors. A special experimental set-up for irradiating the detectors was arranged to obtain adequate proton beams from the Cyclotron CV-28 at IPEN/SP, Brazil. We report experimental data on track densities, track diameters, and activation energies based on current annealing models for the annealing of proton tracks in the energy range investigated. A value of (0.20±0.02)eV was determined as the mean activation energy of the annealing process in CR-39 detectors.     

Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide

High purity semi-insulating 4H SiC single crystals have potential applications for room temperature radiation detectors because of the wide band gap and radiation hardness. To control carrier lifetime, a key parameter for high performance radiation detectors, it is important to understand the nature of the deep traps in this material. For this purpose, we have successfully applied thermally stimulated current (TSC) and high temperature resistivity measurements to investigate deep level centers in semi-insulating 4H SiC samples grown by physical vapor transport. High temperature resistivity measurements showed that the resistivity at elevated temperatures is controlled by the deep level with an activation energy of 1.56 eV. The dominant traps revealed by TSC measurements were at 1.1-1.2 eV. The deep trap levels in 4H-SiC samples, the impurity and point defect nature of TSC traps peaked at ∼106 K (0.23 eV), ∼126 K (0.32 eV), ∼370 K (0.95 eV), ∼456 K (1.1-1.2 eV) are discussed.     

Electron impact ionisation cross sections of cis- and trans-diamminedichloridoplatinum(II) and its hydrolysis products

ABSTRACT

We report total electron-impact ionisation cross sections (EICSs) of cisplatin, its hydrolysis products and transplatin in the energy range from threshold to 10?keV using the binary-encounter-Bethe (BEB) and its relativistic variant (RBEB), and the Deutsch-Märk (DM) methods. We find reasonable agreement between all three methods, and we also note that the RBEB and the BEB methods yield very similar (almost identical) results in the considered energy range. For cisplatin, the resulting EICSs yield cross section maxima of 22.09?×?10^?20?m² at 55.4?eV for the DM method and 18.67?×?10^?20?m² at 79.2?eV for the (R)BEB method(s). The EICSs of monoaquated cisplatin yield maxima of 12.54?×?10^?20?m² at 82.8?eV for the DM method and of 9.74?×?10^?20?m² at 106?eV for the (R)BEB method(s), diaquated cisplatin yields maxima of 7.56?×?10^?20?m² at 118.5?eV for the DM method and of 5.77?×?10^?20?m² at 136?eV for the (R)BEB method(s). Molecular geometry does not affect the resulting EICS significantly, which is also reflected in very similar EICSs of the cis- and trans-isomer. Limitations of the work as well as desirable future directions in the research area are discussed.     

Long time measurements of noise from wind turbines

Noise is an important environmental factor at windmill sites and hence there is a need for reliable methods to control the exposure situation. It is difficult and time consuming to make field measurements that cover a large variety of metrological situations. A measurement station for long time noise measurements have been developed which makes it possible to make noise registrations and recordings at different weather situations.     

SeX(X=H,C,N,O)的结构与势能函数

用密度泛函B3LYP方法对SeX(X=H,C,N,O) 分子体系进行了理论研究,得到SeX(X=H,C,N,O) 分子体系的基态电子状态的平衡几何Re和离解能De,并在计算出来的一系列单点势能基础上,用正规方程组拟合Murrell-Sorbie(M-S)势能函数,得到相应态的解析势能函数,光谱参数Be、αe、ωe、和ωeχe为:HSe:7.74786cm-1、0.22000cm-1、2425.33344cm-1 and 39.51563cm-1;SeC:0.56678cm-1、0.00370cm-1、1021.70315cm-1、5.10000cm-1;NSe:0.45528cm-1、0.00375cm-1、946.30895cm-1、4.98923cm-1;OSe:0.45296cm-1、0.00001cm-1、889.77025cm-1、4.55983cm-1.由此计算对应的光谱参数和力学性质.结果表明SeX(X=H,C,N,O) 分子体系是可稳定存在的.     

Study of interrelation between processes in the thunderstorm atmosphere and energetic cosmic rays with the Groza Tien Shan developmental installation

A Groza installation for studying a lightning discharge mechanism in thunderclouds and clarifying its interrelation with cosmic rays has been designed in the Tien Shan high-altitude cosmic-ray station. The basic results obtained with the Groza installation consisting of detectors serving different purposes and synchronously initiated by a trigger pulse are presented.     

Excitation of lowest electronic states of the uracil molecule by slow electrons

The excitation of lowest electronic states of the uracil molecule in the gas phase has been studied by electron energy loss spectroscopy. Along with excitation of lowest singlet states, excitation of two lowest triplet states at 3.75 and 4.76 eV (±0.05 eV) and vibrational excitation of the molecule in two resonant ranges (1?C2 and 3?C4 eV) have been observed for the first time. The peak of the excitation band related to the lowest singlet state (5.50 eV) is found to be blueshifted by 0.4 eV in comparison with the optical absorption spectroscopy data. The threshold excitation spectra have been measured for the first time, with detection of electrons inelastically scattered by an angle of 180°. These spectra exhibit clear separation of the 5.50-eV-wide band into two bands, which are due to the excitation of the triplet 1³ A?? and singlet 1¹ A?? states.     

Electronic structure and the local electroneutrality level of SiC polytypes from quasiparticle calculations within the GW approximation

The most important interband transitions and the local charge neutrality level (CNL) in silicon carbide polytypes 3C-SiC and nH-SiC (n = 2?C8) are calculated using the GW approximation for the self energy of quasiparticles. The calculated values of band gap E _g for various polytypes fall in the range 2.38 eV (3C-SiC)-3.33 eV (2H-SiC) and are very close to the experimental data (2.42?C3.33 eV). The quasiparticle corrections to E _g determined by DFT-LDA calculations (about 1.1 eV) are almost independent of the crystal structure of a polytype. The positions of CNL in various polytypes are found to be almost the same, and the change in CNL correlates weakly with the change in E _g, which increases with the hexagonality of SiC. The calculated value of CNL varies from 1.74 eV in polytype 3C-SiC to 1.81 eV in 4H-SiC.     

Realisation and metrological characterisation of thickness standards below 100 nm

High-accuracy film thickness measurements in the range below 100 nm can be made by various complex methods like spectral ellipsometry (SE), scanning force microscopy (SFM), grazing incidence X-ray reflectometry (GIXR), or X-ray fluorescence analysis (XRF). The measurement results achieved with these methods are based on different interactions between the film and the probe. A key question in nanotechnology is how to achieve consistent results on a level of uncertainty below one nanometre with different techniques.Two different types of thickness standards are realised. Metal film standards for X-ray techniques in the thickness range 10 to 50 nm are calibrated by GIXR with monochromatised synchrotron radiation of 8048 eV. The results obtained at four different facilities show excellent agreement. SiO₂ on Si standards for SE and SFM in the thickness range 6 to 1000 nm are calibrated by GIXR with monochromatised synchrotron radiation of 1841 eV and with a metrological SFM. Consistent results within the combined uncertainties are obtained with the two methods. Surfaces and interfaces of both types of standards are additionally investigated by transmission electron microscopy (TEM). PACS 61.10.Kw; 68.55.Jk; 06.20.Fn; 06.60.Mr; 07.79.Lh     

Crystallization behaviour of ALD-Ta2O5 thin films: the application of in-situ TEM

The microstructure of Ta₂O₅ thin films, deposited onto Si substrates by atomic layer deposition (ALD), was investigated, using in situ transmission electron microscopy (TEM). As-deposited amorphous films crystallize as the orthorhombic phase L-Ta₂O₅ upon heating at 750°C. Two dominant crystallographic orientations are found, one with (0?0?1) and (1?11?0) planes perpendicular to the substrate, while the other has (0?0?1) planes parallel to the substrate. The grains consist of subgrains which are rotated a few degrees with respect to each other. The kinetics of the crystallization were studied by in-situ TEM heating experiments carried out at nominal temperatures of 790°C, 820°C and 850°C. They reveal that the growth and crystallization activation energies are about 4.2?eV and 6.3?eV, respectively. Tilted subgrains keep forming during growth until they come in contact with neighbouring grains. The crystallization behaviour can be approximated by the Kolmogorov–Johnson–Mehl–Avrami (KJMA or Avrami) equation, giving mode parameters of 2.5, 1.9, and 1.7 at 790°C, 820°C and 850°C, respectively. A small value of mode parameters is attributed to decreasing growth and nucleation rates with time.