A Subnanoscale Investigation of Sb Segregation at MnO/Ag Ceramic/Metal Interfaces

We have studied Sb segregation at MnO/Ag(Sb) ceramic/metal heterophase interfaces employing three-dimensional atom-probe (3DAP) microscopy. Specimens are prepared by the internal oxidation of Ag(Mn) alloys, leading to the formation of nanometer-size MnO precipitates within a Ag(Mn) matrix. Sb is introduced into the internally oxidized specimens with a vapor diffusion treatment. Appreciable Sb segregation is observed only after a subsequent segregation anneal is performed, and the measured interfacial excess of Sb at the MnO/Ag(Sb) interfaces, _Sb ^MnO/Ag, is determined directly. The temporal evolution of the MnO precipitates is followed for the different processing steps employed. It is shown that the concentration of silver within the MnO precipitates decreases from an initial value of 45–50 at.% Ag to less than 5 at.% Ag with increasing annealing time at the different processing temperatures. Thus the MnO precipitates form under paraequilibrium conditions and the precipitates inherit Ag from the matrix. With increasing aging time orthoequilibrium conditions prevail and the MnO precipitates reject the silver atoms they inherited from the matrix.     

Atomic-Scale Structure and Chemistry of Segregation at Matrix/Precipitate Heterophase Interfaces

We study experimentally the local chemistry and atomic structure of heterophase interfaces on an atomic scale. In this work, the heterophase precipitate/matrix interfaces of small molybdenum nitride precipitates in an -iron matrix are investigated on a subnanometer scale by 1-dimensional atom-probe field-ion microscopy (1D-APFIM) and 3-dimensional atom-probe microscopy (3DAPM). Molybdenum nitride precipitates are generated by annealing Fe- 2 at.% Mo- X, where X = 0.4 at.% Sb or 0.5 at.% Sn, at 550°C, in an ammonia/hydrogen atmosphere. Internal nitridation at this temperature produces thin, coherent platelet-shaped molybdenum nitride precipitates. 1D-APFIM selected area analyses are efficient in determining the composition of the precipitates and it is found that a possible Sn or Sb segregation at coherent matrix/precipitate interfaces is either nonexistent or below the detection limit of 1D-APFIM. 3DAPM analyses, however, provide significantly better counting statistics and detect a small, but significant segregation of Sb at the matrix/precipitate interface with a Gibbsian interfacial excess of 0.30 ± 0.15 nm^–2. This is in distinct contrast to the segregation behavior of Sn or Sb at the interfaces of semicoherent coarse precipitates produced by internal nitridation at 600°C, for which much larger Gibbsian interfacial excesses of Sn or Sb, up to 7 ± 3 nm^–2, have been measured. In contrast, the thin platelets are either coherent or have significantly fewer misfit dislocations than is geometrically necessary for a full compensation of the lattice parameter misfit between precipitate and matrix. This demonstrates that Sn or Sb segregation with an appreciable Gibbsian interfacial excess is related to the presence of misfit dislocations at the interfaces of the coarse precipitates.     

The influence of the implantation temperature on the generation of dislocations in antimony-implanted and annealed silicon

We report the first observation of non-equilibrium redistribution effects during laser treatment of a binary system having equilibrium segregation coefficient, k₀, much greater than unity. Polycrystalline aluminium samples implanted with 30 keV Sb⁺ ions to a dose of 1.7 × 10¹⁷ ions/cm² were irradiated with single pulses (7 ns FWHM) from a Nd: glass laser operating in TEM₀₀ mode. The peak energy density (at the centre of the laser spot) varied from 2.0 to 5.7 J/cm². A detailed liquid phase diffusion analysis, explicitly incorporating rapid melt front motion and interfacial segregation, is performed to fit the Sb depth profiles measured with a nuclear microprobe. An effective distribution coefficient k = 1 (as compared to equilibrium value of k₀～7) is obtained in agreement with the theoretical limiting value for large melt front velocities.     

GaSb-based mid-infrared 2–5 μm laser diodes

Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-infrared (2–5 μm spectral domain) are needed for applications such as high sensitivity gas analysis by tunable diode laser absorption spectroscopy (TDLAS) and environmental monitoring. Such semiconductor devices do not exist today, with the exception of type-I GaInAsSb/AlGaAsSb quantum well laser diodes which show excellent room temperature performance, but only in the 2.0–2.6 μm wavelength range. Beyond 2.6 μm, type-II GaInAsSb/GaSb QW lasers, type-III ‘W’ InAs/GaInSb lasers, and interband quantum cascade lasers employing the InAs/Ga(In)Sb/AlSb system, all based on GaSb substrate, are competitive technologies to reach the goal of room temperature CW operation. These different technologies are discussed in this paper. To cite this article: A. Joullié, P. Christol, C. R. Physique 4 (2003).     

Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony

This study investigates the effects of surfactant and segregation from InAs surface quantum dots (SQDs) by incorporating antimony (Sb) into the QD layers. The Sb surfactant effect extends planar growth and suppresses dot formation. Incorporating Sb can reduce the density of SQDs by more than two orders of magnitude. Photoluminescence (PL) reveals enhancement in the optical properties of InAs SQDs as the Sb beam equivalent pressure (BEP) increases. This improvement is caused by the segregation of Sb on the surface of SQDs, which reduces non-radiative recombination and suppresses carrier loss. The dark line at the SQDs surface in the transmission electron microscopic image suggests that the incorporated Sb probably segregates close to the surface of the SQDs. These results indicate a marked Sb segregation effect that can be exploited to improve the surface-sensitive properties of SQDs for biological sensing.     

Application of automated crystallography for transmission electron microscopy in the study of grain-boundary segregation

Analytical Electron Microscopy (AEM) has brought significant progress in the study of grain-boundary segregation. Using X-ray energy-dispersive spectrometry (XEDS) in the AEM, elemental segregation information can be related to the crystallographic character of the same boundary via conventional Transmission Electron Microscope (TEM) diffraction techniques. While significant efforts have been made to improve XEDS analysis of sub-nanometer segregation layers, the methods for crystallographic characterization of grain boundaries have remained the same for several decades and labor-intensive processes. Recently, a method termed Automated Crystallography for TEM (ACT) was developed, which automates crystallographic characterization of grains under TEM observation. In the present work, we combine ACT and X-ray mapping via EDS in AEM for the study of Sb grain-boundary segregation in a rapidly solidified Cu-0.08 wt % Sb alloy. In contrast with previous reports, a large degree of anisotropy in Sb segregation level between different boundaries is found. ACT results suggest that one of the several grain boundaries observed with no detectable Sb segregation is very close to a Sigma 3 coincidence-site lattice structure. The reason for the observed anisotropy in the present alloy is discussed, based upon McLean's theory of segregation.     

An atomistic study of grain boundary segregation and cracking

A Monte Carlo model is applied to study a Σ = 5 (310) fcc tilt boundary structure and impurity segregation to this boundary. The Johnson-type potential functions are used to express atomic interactions for two binary alloys of NiCu and CuSb systems. Through atomic relaxation near absolute zero, the basic structural unit of the Σ = 5 CSL boundary is found to dissociate into two subunits. For the NiCu system, copper segregation to the boundary follows the Gibbsian equilibrium segregation behavior in which the segregation is localized on a few atomic layers, its amount increases with increase in the bulk concentration but decreases with increase in temperature. For the CuSb system, an assumption of the CuCu bond weakening due to the strong, adjacent CuSb bonds is also incorporated to realize the embrittling effect of Sb atoms. The preferential site for the large Sb atoms is the vertex of a pentagonal bipyramid in the Σ = 5 grain boundary. Without bond weakening, the Sb-segregated grain boundary maintains a structure combined with a distorted pentagonal bipyramid and a capped trigonal prism. However, with bond weakening some bonds of the trigonal prisms are disrupted in order to form new pentagonal bipyramids. When a uniaxial strain is applied in the direction perpendicular to the grain boundary plane, the weakened copper bonds become the source of microcracks thus enhancing brittle fracture along the Sb-segregated grain boundary.     

Reduced Shell Model Calculations of ^111Sb and ^112Sb

The low-lying states of the mid-heavy odd-even ^111Sb and odd-odd ^112Sb isotopes are calculated for the first time within the shell model framework. The shell model calculations have been carried out within the reduced model space including the single particle orbits ld5/2,097/2, ld3/2, 2Sl/2. We obtain the energy spectra for the ^111Sb and ^112Sb isotopes in the reduced model space by using CD-Bonn two-body effective nucleon-nucleon interaction. The energy spectra are compared to the experimental results to give some discussion about the low-lying states of ^111Sb and ^112Sb.     

Effect of 0h11/2 Level on Shell Model Calculations of ^105Sb and ^107Sb

The full and reduced shell model calculations have been carried out for the light odd-even ^105Sb and ^107Sb isotopes. The model space has been chosen as 1d5/2, 0g7/2, 1d3/2, 2s1/2, and 0h11/2 for the full calculations and excluded 0h11/2 for the reduced calculations. The reduced shell model calculations of ^105Sb and ^107Sb isotopes are presented for the first time. We obtain the energy spectra for the ^105Sb and ^107Sb isotopes in the full and reduced model space by using CD-Bonn two-body effective nucleon-nucleon interaction. The resulting energy spectra are compared to the experimental results to understand the effect of the 0h11/2 level on the shell model calculations. We draw conclusions about the right model space in the shell model calculations for the isotopes around the N =Z= 50 region of the periodic table.     

Kinematic segregation of granular mixtures in sandpiles

We study the segregation of granular mixtures in two-dimensional silos using a recently proposed set of coupled equations for surface flows of grains. We study the thick flow regime, where the grains are segregated in the rolling phase. We incorporate this dynamical segregation process, called kinematic sieving, free-surface segregation or percolation, into the theoretical formalism and calculate the profiles of the rolling species and the concentration of grains in the bulk in the steady state. Our solution shows the segregation of the mixture with the large grains being found at the bottom of the pile in qualitative agreement with experiments. Received: 6 July 1998 / Revised and Accepted: 13 August 1998     

GaInSb/GaSb量子阱结构的低温光致发光谱

ＧａＩｎＳｂ三元合金半导体可用于制作工作于１．５５～５．５μｍ波段范围的光电子器件．在光通讯方面,需要２．５５μｍ波长的激光器和接收器,ＧａＩｎＳｂ半导体合金无疑是一种可选的材料．此外,这种材料也可用于制作高速电子器件,与ＧａＡｓ基异质结构相比,Ｇａ...     

Segregation of Sn and Sb in a ternary Cu(1 0 0)SnSb alloy

Surface segregation studies of Sn and Sb in Cu(1 0 0)-0.14 at.% Sn-0.12 at.% Sb ternary alloy, have been done by making use of Auger Electron Spectroscopy. The method of Linear Temperature Ramp (LTR) was employed, whereby the sample was heated and cooled linearly at a constant rate. The positive heating rate showed both a kinetic segregation profile, as well as a narrow equilibrium segregation region, at higher temperatures. The equilibrium segregation profile was extended by cooling the sample. Sn was first to segregate to the surface due to its higher diffusion coefficient, mainly from a smaller activation energy E_Sn. Sb, due to its higher segregation energy, eventually replaced Sn from the surface. The modified Darken model was used to simulate the profile yielding the following segregation parameters: D_o(Sn) = 6.3 × 10⁻⁶ m²/s, D_o(Sb) = 2.8 × 10⁻⁵ m²/s; E_Sn = 175.4 kJ/mol, E_Sb = 186.3 kJ/mol; , ; Ω_Cu-Sn = 3.4 kJ/mol, Ω_Cu-Sb = 15.9 kJ/mol and Ω_Sn-Sb = −5.4 kJ/mol.     

Investigation of laser-annealed antimony implanted Si by ion backscattering and channeling and structure analysis

Rutherford backscattering (RBS), ion channeling and surface studies were done to investigate diffusion of ion implanted Sb in Si. Clean and polished Si was implanted by 190KeV Sb⁺ ions to a dose of 2.3×10¹⁵cm^–2. Laser annealing was carried out by a single 10 J/cm² laser pulse from a Nd: glass (7 ns FWHM) laser. Concentration profiles of Sb as a function of depth and dopant substitutionalities were measured by helium-ion backscattering and channeling. The laser shot resulted in melting of the central portion of the spot. A honey comb type surface morphology was found by SEM analysis. Dektak surface profiles showed a crater of 600 nm depth. One-dimensional heating calculations show that dopant diffusion depths, after consideration of simultaneous evaporation, can be 400 nm, whereas experiments indicate larger depths (1 m). Calculated crater depth is roughly twice the experimental value. Measured depths are much larger than calculated by heat diffusion and indicate that regrowth and distribution of Sb has been modified by convection in the melt. We estimate good substitutionality up to 4 J/cm² and discuss energy density dependence for such high-energy density laser pulses.     

Observation of anomalous spin segregation in a trapped Fermi gas

We report the observation of spin segregation, i.e., time-dependent separation of the spin density profiles of two spin states, in a trapped, coherently prepared Fermi gas of 6Li with a magnetically tunable scattering length a12 close to zero. For |a12| approximately = 5 bohr, as the cloud profiles evolve, the measured difference in the densities at the cloud center increases in 200 ms from 0 to approximately = 60% of the initial mean density and changes sign with a12. The data are in disagreement in both amplitude and temporal evolution with a spin-wave theory for a Fermi gas. In contrast, for a Bose gas, an analogous theory has successfully described previous observations of spin segregation. The observed segregated atomic density profiles are far from equilibrium, yet they persist for approximately = 5 s, long compared to the axial trapping period of 6.9 ms. We find the zero crossing in a12=0, where spin segregation ceases, at 527.5+/-0.2 G.     

Dissociaton and energy transfer in molecular impact on surfaces: Experimental and theoretical studies of I2/Mg(100) and I2/sapphire

Solute segregation to antiphase boundaries (APBs) in long-range ordered alloys and its effects on antiphase domain coarsening kinetics have been investigated theoretically, and calculations have been carried out to model the structure and properties of APBs in B2-ordered FeAl alloys. Equilibrium segregation was studied by using the continuum diffuse-interface model of Cahn and Hilliard to calculate profiles of order parameter and composition, as well as interfacial free energy. The migration kinetics of APBs with segregation have been investigated theoretically for the low-velocity regime. A differential equation describing concentration deviations from the equiibrium profile is derived, and approximate solutions to the equation are determined to predict segregation profiles for migrating APBs in FeAl alloys. Measurements of domain coarsening kinetics in FeAl alloys are presented for a temperature range in which segregation was predicted theoretically. A marked slowing of domain coarsening kinetics in this range was observed.     

Segregation Effects at a High-Angle Twist Boundary in ZnO

Ab initio density functional plane-wave pseudopotential calculations were performed for a = 7 ( = 21.79°) [0001] twist boundary in ZnO with and without the presence of Sb impurities. The segregation energies revealed a significant driving force for segregation and it was shown that the formation of an Sb monolayer was favoured. Decreased coordination in the boundary core suggested a trend towards the formation of an intergranular phase. The impurity states caused by the monolayer were located within the band gap and higher in energy relative to the state produced by a single impurity. Charge transfer to the Sb monolayer was observed indicating a possible enhancement of the grain boundary potential barrier.     

Interfacial segregation in Ag-Au,Au-Pd,and Cu-Ni alloys: I. (100) surfaces

Atomistic simulations of segregation to (100) free surface in Ag–Au, Au–Pd, and Cu–Ni alloy systems have been performed for a wide range of temperatures and compositions within the solid solution region of these alloy phase diagrams. In addition to the surface segregation profiles, surface free energies, enthalpies, and entropies were determined. These simulations were performed within the framework of the free energy simulation method, in which an approximate free energy functional is minimized with respect to atomic coordinates and atomic site occupation. The effects of the relaxation with respect to either the atomic positions or the atomic concentrations are discussed. For all alloy bulk compositions (0.05 C 0.95) and temperatures (400 T(K) 1,100) examined, Ag, Au, and Cu segregates to the surface in the Ag–Au, Au–Pd, and Cu–Ni alloy systems, respectively. The present results are compared with several theories for segregation. The resultant segregation profiles in Au–Pd and Ag–Au alloys are shown to be in good agreement with an empirical segregation theory, while in Cu–Ni alloys the disagreement in Ni-rich alloys is substantial. The width of the segregation profile is limited to approximately three to four atomic planes. The surface thermodynamic properties depend sensitively on the magnitude of the surface segregation, and some of them are shown to vary linearly with the magnitude of the surface segregation.     

InAs/GaInSb超晶格薄膜结构与电学性能

采用分子束外延(MBE)方法, 调节生长温度、Ⅴ/Ⅲ束流比等参数在(001)GaAs衬底上生长了InAs/GaInSb超晶格薄膜.结果表明:InAs/GaInSb超晶格薄膜的最佳生长温度在385~395 ℃, Ⅴ/Ⅲ束流比为5.7 :1~8.7 :1.高能电子衍射仪(RHEED)原位观测到清晰的GaAs层(4×2)、GaSb层(1×3)和InAs层(1×2)再构衍射条纹.获得的超晶格薄膜结构质量较好.随着温度的升高, 材料的载流子浓度和迁移率均上升.     

Graphene Nanosheets Suppress the Growth of Sb Nanoparticles in an Sb/C Nanocomposite to Achieve Fast Na Storage

Presently, graphene incorporation is one of the most effective strategies to develop superior electrode materials for sodium‐ion batteries (SIBs). Herein, it is excitingly found that an incorporated graphene nanosheet in the preparation processes can not only completely protect all the Sb nanoparticles in an Sb/C composite from being inactivated, but also suppresses their growth to undesirable micrometer size. While there are still many exposed Sb particulates on the surface of pristine Sb/C microplates, the graphene‐incorporated Sb/C/G nanocomposite consists of uniform Sb nanoparticles of 20–50 nm, all of which have been protected by and wrapped in the mixed carbon network. When used as anode materials for SIBs, the Sb/C/G nanocomposite exhibits the best Na‐storage properties in terms of the highest reversible capacity (650 mA h g^?1 at 0.025 A g^?1), fastest Na‐storage ability (290 mA h g^?1 at a high current density of 8 A g^?1), and optimal cycling performance (no capacity decay after 200 cycles), in comparison to pristine Sb/C and pure Sb. It is further revealed that the much enhanced performance should originate from the improvement of Na‐storage kinetics and increase of electronic conductivity via comparing the electrochemical impedance spectra, and cyclic voltammetry profiles, as well as the polarization variation along with current densities.     

Growth Control of High-Performance In As/Ga Sb Type-Ⅱ Superlattices via Optimizing the In/Ga Beam-Equivalent Pressure Ratio

The performance of type-II superlattice(T2 SL) long-wavelength infrared devices is limited by crystalline quality of T2 SLs. We optimize the process of growing molecular beam epitaxy deposition T2 SL epi-layers on Ga Sb(100)to improve the material properties. Samples with identical structure but diverse In/Ga beam-equivalent pressure(BEP) ratio are studied by various methods, including high-resolution x-ray diffraction, atomic force microscopy and high-resolution transmission electron microscopy. We find that appropriately increasing the In/Ga BEP ratio contributes to improving the quality of T2 SLs, but too large In BEP will much more easily cause a local strain,which can lead to more In Sb islands in the In Sb interfaces. The In Sb islands melt in the In Sb interfaces caused by the change of chemical potential of In atoms may result in the "nail" defects covering the whole T2 SLs, especially the interfaces of Ga Sb-on-In As. When the In/Ga BEP ratio is about 1, the T2 SL material possesses a lower full width at half maximum of +1 first-order satellite peak, much smoother surface and excellently larger area uniformity.