Controlled Expansion of a Strong‐Field Iron Nitride Cluster: Multi‐Site Ligand Substitution as a Strategy for Activating Interstitial Nitride Nucleophilicity

Multimetallic clusters have long been investigated as molecular surrogates for reactive sites on metal surfaces. In the case of the μ₄‐nitrido cluster [Fe₄(μ₄‐N)(CO)₁₂]^?, this analogy is limited owing to the electron‐withdrawing effect of carbonyl ligands on the iron nitride core. Described here is the synthesis and reactivity of [Fe₄(μ₄‐N)(CO)₈(CNAr^Mes2)₄]^?, an electron‐rich analogue of [Fe₄(μ₄‐N)(CO)₁₂]^?, where the interstitial nitride displays significant nucleophilicity. This characteristic enables rational expansion with main‐group and transition‐metal centers to yield unsaturated sites. The resulting clusters display surface‐like reactivity through coordination‐sphere‐dependent atom rearrangement and metal–metal cooperativity.     

Triazine‐Based Graphitic Carbon Nitride: a Two‐Dimensional Semiconductor

Graphitic carbon nitride has been predicted to be structurally analogous to carbon‐only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine‐based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two‐dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long‐range, in‐plane order, while optical spectroscopy, X‐ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field‐effect transistors and light‐emitting diodes.     

Porous Tantalum Nitride Single Crystal at Two‐Centimeter Scale with Enhanced Photoelectrochemical Performance

Porous tantalum nitride (Ta₃N₅) single crystals, combining structural coherence and porous microstructure, would substantially improve the photoelectrochemical performance. The structural coherence would reduce the recombination of charge carriers and maintain excellent transport properties while the porous microstructure would not only reduce photon scattering but also facilitate surface reactions. Here, we grow bulk‐porous Ta₃N₅ single crystals on a two‐centimeter scale with (002), (023), and (041) facets, respectively, and show significantly enhanced photoelectrochemical performance. We show the preferential facet growth of porous crystals in a lattice reconstruction strategy in relation to lattice match and lattice channel. We present the facet engineering to enhance light absorption, exciton lifetime and transport properties. The porous Ta₃N₅ single crystal boosts photoelectrochemical oxidation of alcohols with the (002) facet showing the highest performance of >99 % alcohol conversion and >99 % aldehyde/ketone selectivity.     

Graphitic Carbon Nitride (g‐C3N4): An Interface Enabler for Solid‐State Lithium Metal Batteries

Solid‐state Li metal batteries (SSLMBs) have attracted considerable interests due to their promising energy density as well as high safety. However, the realization of a well‐matched Li metal/solid‐state electrolyte (SSE) interface remains challenging. Herein, we report g‐C₃N₄ as a new interface enabler. We discover that introducing g‐C₃N₄ into Li metal can not only convert the Li metal/garnet‐type SSE interface from point contact to intimate contact but also greatly enhance the capability to suppress the dendritic Li formation because of the greatly enhanced viscosity, decreased surface tension of molten Li, and the in situ formation of Li₃N at the interface. Thus, the resulting Li‐C₃N₄|SSE|Li‐C₃N₄ symmetric cell gives a significantly low interfacial resistance of 11 Ω cm² and a high critical current density (CCD) of 1500 μA cm^?2. In contrast, the same symmetric cell configuration with pristine Li metal electrodes has a much larger interfacial resistance (428 Ω cm²) and a much lower CCD (50 μA cm^?2).     

An Expanded Family of Dysprosium–Scandium Mixed‐Metal Nitride Clusterfullerenes: The Role of the Lanthanide Metal on the Carbon Cage Size Distribution

A large family of dysprosium–scandium (Dy‐Sc) mixed‐metal nitride clusterfullerenes (MMNCFs), Dy_xSc_3?xN@C_2n (x=1, 2, 2n=68, 70, 76–86) have been successfully synthesized and isolated. Among these, the C₇₀ and C₈₂‐based MMNCFs are two new cages that have never been isolated for MMNCFs. Synthesis of Dy_xSc_3?xN@C_2n was accomplished by the “selective organic solid” route using guanidinium thiocyanate as the nitrogen source, and their isolation was fulfilled by recycling HPLC. UV/Vis‐NIR spectroscopic study indicates that almost all Dy_xSc_3?xN@C_2n MMNCFs are kinetically stable fullerenes with optical band gaps beyond 1 eV. This feature is distinctly different to their counterparts Dy₃N@C_2n (78≤2n≤88), whose for optical band‐gaps are below 1 eV for relatively large cages such as C₈₄ and C₈₆. An FTIR spectroscopic study in combination with DFT calculations enables reasonable assignments of the cage isomeric structures of all isolated Dy_xSc_3?xN@C_2n (x=1, 2, 2n=68, 70, 76–86) MMNCFs. The carbon cage size distribution of Dy_xSc_3?xN@C_2n (2n=68, 70, 76–86) is compared to the reported Dy₃N@C_2n (78≤2n≤8) homogeneous NCF and Dy_xSc_3?xN@C_2n (78≤2n≤88) MMNCF families, revealing that the medium‐sized Dy metal plays a crucial role on the expanded cage size distribution of MMNCFs. As a result, Dy_xSc_3?xN@C_2n MMNCFs are the largest MMNCF family reported to date.     

Nanocrystalline‐Graphene‐Tailored Hexagonal Boron Nitride Thin Films

Unintentionally formed nanocrystalline graphene (nc‐G) can act as a useful seed for the large‐area synthesis of a hexagonal boron nitride (h‐BN) thin film with an atomically flat surface that is comparable to that of exfoliated single‐crystal h‐BN. A wafer‐scale dielectric h‐BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc‐G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc‐G‐tailored h‐BN thin film was systematically analyzed. This approach provides a novel method for preparing high‐quality two‐dimensional materials on a large surface.