High-pressure synthesis, crystal and electronic structures, and transport properties of a novel perovskite HgSnO3

We synthesized a novel perovskite-type oxide, HgSnO3, under high pressure and high temperature, and investigated the crystal and electronic structures as well as the transport properties. It was found that HgSnO3 possesses a trigonal-hexagonal lattice with space group R3c. The band gap of HgSnO3 estimated by diffuse reflectance spectrum measurement is relatively small (1.6 eV), irrespective of the large octahedral tilting distortion. The small band gap is caused by the increase in the bandwidth of the conduction and valence bands due to mixing between the empty Hg 6s orbitals and the antibonding Sn 5s-O 2p states and the mixing between the filled Hg 5d orbitals and the O 2p states, respectively. The electronic resistivity, Seebeck coefficient, and Hall coefficient measurements indicate that as-synthesized HgSnO3 is an n-type semiconductor.     

Synthesis of CdSnO(3).3H(2)O nanocubes via ion exchange and their thermal decompositions to cadmium stannate

Uniform crystalline CdSnO3.3H2O nanocubes with a 28-35 nm edge length have been obtained via the ion-exchange reaction of Na2Sn(OH)6 in a CdSO4 aqueous solution, assisted by ultrasonic treatment. Precursor Na2Sn(OH)6 crystals were prepared via hydrothermal treatment in an ethanol/water solution. The formation of CdSnO3.3H2O nanocubes resulted from the strain during the ion-exchange process. The influences of reaction conditions, such as ion-exchange (ultrasonic treatment) duration, solvent constitutes, surfactant, and pH on the formation of CdSnO3.3H2O crystals were described. Crystalline CdSnO3 and Cd2SnO4 have been obtained by thermal treatment at 300 and 500 degrees C, respectively, for 5 h under an inert-gas protecting condition using CdSnO3.3H2O nanocubes as the precursor. The cube shape of CdSnO3.3H2O was sustained after thermal decomposition to CdSnO3.     

Synthesis of new visible light active photocatalysts of Ba(In(1/3)Pb(1/3)M'(1/3))O3 (M' = Nb, Ta): a band gap engineering strategy based on electronegativity of a metal component

We have synthesized new, efficient, visible light active photocatalysts through the incorporation of highly electronegative non-transition metal Pb or Sn ions into the perovskite lattice of Ba(In(1/3)Pb(1/3)M'(1/3))O3 (M = Sn, Pb; M' = Nb, Ta). X-ray diffraction, X-ray absorption spectroscopic, and energy dispersive spectroscopic microprobe analyses reveal that tetravalent Pb or Sn ions exist in the B-site of the perovskite lattice, along with In and Nb/Ta ions. According to diffuse UV-vis spectroscopic analysis, the Pb-containing quaternary metal oxides Ba(In(1/3)Pb(1/3)M'(1/3))O3 possess a much narrower band gap (E(g) approximately 1.48-1.50 eV) when compared to the ternary oxides Ba(In(1/2)M'(1/2))O3 (E(g) approximately 2.97-3.30 eV) and the Sn-containing Ba(In(1/3)Sn(1/3)M'(1/3))O3 derivatives (E(g) approximately 2.85-3.00 eV). Such a variation of band gap energy upon the substitution is attributable to the broadening of the conduction band caused by the dissimilar electronegativities of the B-site cations. In contrast to the ternary or the Sn-substituted quaternary compounds showing photocatalytic activity under UV-vis irradiation, the Ba(In(1/3)Pb(1/3)M'(1/3))O3 compounds induce an efficient photodegradation of 4-chlorophenol under visible light irradiation (lambda > 420 nm). The present results highlight that the substitution of electronegative non-transition metal cations can provide a very powerful way of developing efficient visible light harvesting photocatalysts through tuning of the band structure of a semiconductive metal oxide.     

Sn1-xSbxO2固溶体电极的形成能与电子结构

为研究Sb掺杂对Ti/SnO2电极稳定性与导电性的影响, 采用基于密度泛函理论的平面波赝势方法对金红石型SnO2及不同比例Sb掺杂SnO2体系进行了第一性原理计算, 用广义梯度近似方法优化了Sn1-xSbxO2固溶体电极的晶体结构, 计算了掺杂前后体系的电子结构以及不同掺杂比例时的形成能. 结果表明: Sb替代Sn后, 晶格常数与晶胞体积均增加, 但掺杂形成能随掺杂量变化不大, 在掺杂量为0.083时掺杂形成能达到最低值5.08 eV,稳定性最好. 掺杂Sb后, 在费米能级至最低导带处存在Sb 5s电子态分布, 产生施主能级; 同时Sb掺杂后, 在导带底形成的可填充电子数也从未掺杂的4增加到了掺杂后的19, 导电性明显增强, 且在掺杂量为0.063时导电性最强. 本文的计算结果为钛基Sn1-xSbxO2氧化物电极的开发与应用提供了理论依据.     

An approach to control of band gap energy and photoluminescence upon band gap excitation in Pr(3+)-doped perovskites La(1/3)MO3 (M=Nb, Ta):Pr3+

We synthesized polycrystalline pristine and Pr(3+)-doped perovskites La(1/3)MO(3) (M = Nb, Ta):Pr(3+) and investigated their crystal structure, optical absorption, and luminescence properties. The optical band gap of La(1/3)NbO(3) (3.2 eV) is smaller than that of La(1/3)TaO(3) (3.9 eV), which is primarily due to the difference in electronegativity between Nb and Ta. In La(1/3)NbO(3):Pr(3+), the red emission assigned to the f-f transition of Pr(3+) from the excited (1)D(2) level to the ground (3)H(4) state upon band gap photoexcitation (near-UV) was observed, whereas the f-f transition of Pr(3+) with blue-green emission from the excited (3)P(0) level to the ground (3)H(4) state was quenched. On the other hand, in La(1/3)TaO(3):Pr(3+), the blue-green emission upon band gap photoexcitation was observed. Their differences in emission behavior are attributed to the energy level of the ground and excited states of 4f(2) for Pr(3+), relative to the energy levels of the conduction and valence bands, and the trapped electron state, which mediates the relaxation of electron from the conduction band to the excited state of Pr(3+). La(1/3)NbO(3):Pr(3+) is a candidate red phosphor utilizing near-UV LED chips (e.g., λ = 375 nm) as an excitation source.     

Bandgap Engineering of Lead-Free Double Perovskite Cs2AgBiBr6 through Trivalent Metal Alloying

The double perovskite family, A₂M^IM^IIIX₆, is a promising route to overcome the lead toxicity issue confronting the current photovoltaic (PV) standout, CH₃NH₃PbI₃. Given the generally large indirect band gap within most known double perovskites, band-gap engineering provides an important approach for targeting outstanding PV performance within this family. Using Cs₂AgBiBr₆ as host, band-gap engineering through alloying of In^III/Sb^III has been demonstrated in the current work. Cs₂Ag(Bi_1−xM_x)Br₆ (M=In, Sb) accommodates up to 75 % In^III with increased band gap, and up to 37.5 % Sb^III with reduced band gap; that is, enabling ca. 0.41 eV band gap modulation through introduction of the two metals, with smallest value of 1.86 eV for Cs₂Ag(Bi_0.625Sb_0.375)Br₆. Band structure calculations indicate that opposite band gap shift directions associated with Sb/In substitution arise from different atomic configurations for these atoms. Associated photoluminescence and environmental stability of the three-metal systems are also assessed.     

Oxysulfide Sm(2)Ti(2)S(2)O(5) as a stable photocatalyst for water oxidation and reduction under visible light irradiation (lambda < or = 650 nm)

A Ti-based oxysulfide, Sm(2)Ti(2)S(2)O(5), was studied as a visible light-driven photocatalyst. Under visible light (440 nm < or = lambda < or = 650 nm) irradiation, Sm(2)Ti(2)S(2)O(5) with a band gap of approximately 2 eV evolved H(2) or O(2) from aqueous solutions containing a sacrificial electron donor (Na(2)S-Na(2)SO(3) or methanol) or acceptor (Ag(+)) without any noticeable degradation. This oxysulfide is, therefore, a stable photocatalyst with strong reduction and oxidation abilities under visible-light irradiation. The electronic band structure of Sm(2)Ti(2)S(2)O(5) was calculated using the plane-wave-based density functional theory (DFT) program. It was elucidated that the S3p orbitals constitute the upper part of the valence band and these orbitals make an essential contribution to the small band gap energy. The conduction and valence bands' positions of Sm(2)Ti(2)S(2)O(5) were also determined by electrochemical measurements. It indicated that conduction and valence bands were found to have satisfactory potentials for the reduction of H(+) to H(2) and the oxidation of H(2)O to O(2) at pH = 8. This is consistent with the results of the photocatalytic reactions.     

Investigation of structural and electronic properties by pnictogen substitution in the layered oxypnictides (LaO)ZnPn (Pn = P,As, Sb)

We study the structural and electronic properties of p-type layered oxypnictides (LaO)ZnPn (Pn = P, As, Sb), calculated by first principles. Pn substitution from P to Sb increases D_2d-type local symmetry distortions at ZnPn₄ and OLa₄ tetrahedra. (LaO)ZnP and (LaO)ZnAs exhibit direct band gaps (Γ → Γ) of 0.621 eV and 0.528 eV, respectively, while (LaO)ZnSb exhibits an indirect band gap (Γ → 0.2Λ) of 0.029 eV. The band gaps come from valence Pn p _x/p _y and conduction Zn 4s states. Moreover, the substitution increases split-off energy at Z and Γ points. We find localized valence degeneracy-lifted Zn 3d states because of the possible second-order Jahn-Teller effect, which induces the local symmetry distortions. The localized Zn 3d states are followed by minor bonding s-p hybridization of Zn and Pn. Above them, we show major bonding s-p hybridization; O 2p states in electron-blocking [LaO]⁺ layers, which are essential for thermoelectricity; and nonbonding Pn p states near Fermi level. In the conduction band, antibonding s-p hybridization is found. Our result shows new insights and findings of structural and electronic properties, which explain previous experimental results, as the focus of this study is related to inorganic chemistry. This study is important for future functional device applications.     

Lead-Free Halide Double Perovskite Cs2AgBiBr6 with Decreased Band Gap

Environmentally friendly halide double perovskites with improved stability are regarded as a promising alternative to lead halide perovskites. The benchmark double perovskite, Cs₂AgBiBr₆, shows attractive optical and electronic features, making it promising for high-efficiency optoelectronic devices. However, the large band gap limits its further applications, especially for photovoltaics. Herein, we develop a novel crystal-engineering strategy to significantly decrease the band gap by approximately 0.26 eV, reaching the smallest reported band gap of 1.72 eV for Cs₂AgBiBr₆ under ambient conditions. The band-gap narrowing is confirmed by both absorption and photoluminescence measurements. Our first-principles calculations indicate that enhanced Ag–Bi disorder has a large impact on the band structure and decreases the band gap, providing a possible explanation of the observed band-gap narrowing effect. This work provides new insights for achieving lead-free double perovskites with suitable band gaps for optoelectronic applications.     

Strong near-infrared luminescence in BaSnO3

Powdered samples of the perovskite BaSnO(3) exhibit strong near-infrared (NIR) luminescence at room temperature, following band-gap excitation at 380 nm (3.26 eV). The emission spectrum is characterized by a broad band centered at 905 nm (1.4 eV), tailing on the high-energy side to approximately 760 nm. The Stokes shift is 1.9 eV, and measured lifetimes in the range 7-18 ms depend on preparative conditions. These extraordinary long values indicate that the luminescence involves a defect state(s). At low temperatures, both a sharp peak and a broad band appear in the visible portion of the luminescence spectrum at approximately 595 nm. Upon cooling, the intensity of the NIR emission decreases, while the integrated intensities of the visible emission features increase to approximately 40% of the NIR intensity at 77 K. Room-temperature photoluminescence (PL) is observed across the Ba(1-x)Sr(x)SnO(3) series. As the strontium content increases, the excitation maximum and band gap shift further into the UV, while the intensity of the NIR emission peak decreases and shifts further into the infrared. This combination leads to an unexpectedly large increase in the Stokes shift. The unusual NIR PL in BaSnO(3) may originate from recombination of a photogenerated valence-band hole and an occupied donor level, probably associated with a Sn(2+) ion situated roughly 1.4 eV above the valence-band edge.     

Ternary arsenides A2Zn2As3 (A = Sr, Eu) and their stuffed derivatives A2Ag2ZnAs3

The ternary arsenides A(2)Zn(2)As(3) and the quaternary derivatives A(2)Ag(2)ZnAs(3) (A = Sr, Eu) have been prepared by stoichiometric reaction of the elements at 800 °C. Compounds A(2)Zn(2)As(3) crystallize with the monoclinic Ba(2)Cd(2)Sb(3)-type structure (Pearson symbol mC28, space group C2/m, Z = 4; a = 16.212(5) ?, b = 4.275(1) ?, c = 11.955(3) ?, β = 126.271(3)° for Sr(2)Zn(2)As(3); a = 16.032(4) ?, b = 4.255(1) ?, c = 11.871(3) ?, β = 126.525(3)° for Eu(2)Zn(2)As(3)) in which CaAl(2)Si(2)-type fragments, built up of edge-sharing Zn-centered tetrahedra, are interconnected by homoatomic As-As bonds to form anionic slabs [Zn(2)As(3)](4-) separated by A(2+) cations. Compounds A(2)Ag(2)ZnAs(3) crystallize with the monoclinic Yb(2)Zn(3)Ge(3)-type structure (Pearson symbol mC32, space group C2/m; a = 16.759(2) ?, b = 4.4689(5) ?, c = 12.202(1) ?, β = 127.058(1)° for Sr(2)Ag(2)ZnAs(3); a = 16.427(1) ?, b = 4.4721(3) ?, c = 11.9613(7) ?, β = 126.205(1)° for Eu(2)Ag(2)ZnAs(3)), which can be regarded as a stuffed derivative of the Ba(2)Cd(2)Sb(3)-type structure with additional transition-metal atoms in tetrahedral coordination inserted to link the anionic slabs together. The Ag and Zn atoms undergo disorder but with preferential occupancy over four sites centered in either tetrahedral or trigonal planar geometry. The site distribution of these metal atoms depends on a complex interplay of size and electronic factors. All compounds are Zintl phases. Band structure calculations predict that Sr(2)Zn(2)As(3) is a narrow band gap semiconductor and Sr(2)Ag(2)ZnAs(3) is a semimetal. Electrical resistivity measurements revealed band gaps of 0.04 eV for Sr(2)Zn(2)As(3) and 0.02 eV for Eu(2)Zn(2)As(3), the latter undergoing an apparent metal-to-semiconductor transition at 25 K.     

Computational investigation of the Bi lone-pairs in monoclinic bismuth triborate BiB3O6

The Bi-O interactions and the Bi lone-pairs in monoclinic BiB3O6 are investigated with gradient-corrected hybrid B3PW density functional theory within the Gaussian-orbital-based CO-LCAO scheme. The Bi 6s and O 2p orbitals contribute to both bonding and antibonding interactions below the Fermi level. The stereochemical activity of the Bi lone-pairs was found to have a major origination from the primary interaction for the Bi 6s-O 2p antibonding orbital. The Bi 6p orbitals are not critically responsible for the non-spherical shape of the Bi lone-pairs, although they indeed participate into the secondary interaction with the Bi 6s-O 2p antibonding states. It is also suggested that O 2p components within the Bi lone-pairs are dominantly significant for the optical responses of BiB3O6 over the Bi 6s components.     

Unusual Sb-Sb bonding in high temperature thermoelectric materials

The emerging families of advanced thermoelectrics are dominated by antimonides and tellurides. Because the structures of the tellurides are mostly composed of NaCl-related motifs, they do not contain any Te-Te bonds, and all of the antimonide structures exhibit Sb-Sb bonds of various lengths. Taking all Sb-Sb distances shorter than 3.2 A into account, the Sb atom substructures are Sb(2) (4-) pairs in beta-Zn(4)Sb(3), linear Sb(3) (7-) units in Yb(14)MnSb(11), planar Sb(4) (4-) rectangles in the skutterudites, for example, LaFe(3)CoSb(12), and Sb(8) cubes interconnected via short Sb-Sb bonds to a three-dimensional network in Mo(3)Sb(5)Te(2). These interactions have a significant impact on the band gap size as well as on the effective mass around the Fermi level, for the bottom of the conduction band is in all cases predominated by antibonding Sb-Sb interactions, and-in some cases-the top of the valence band by bonding Sb-Sb interactions.     

The electronic structures of vanadate salts: Cation substitution as a tool for band gap manipulation

The electronic structures of six ternary metal oxides containing isolated vanadate ions, Ba₃(VO₄)₂, Pb₃(VO₄)₂, YVO₄, BiVO₄, CeVO₄ and Ag₃VO₄ were studied using diffuse reflectance spectroscopy and electronic structure calculations. While the electronic structure near the Fermi level originates largely from the molecular orbitals of the vanadate ion, both experiment and theory show that the cation can strongly influence these electronic states. The observation that Ba₃(VO₄)₂ and YVO₄ have similar band gaps, both 3.8 eV, shows that cations with a noble gas configuration have little impact on the electronic structure. Band structure calculations support this hypothesis. In Pb₃(VO₄)₂ and BiVO₄ the band gap is reduced by 0.9-1.0 eV through interactions of (a) the filled cation 6s orbitals with nonbonding O 2p states at the top of the valence band, and (b) overlap of empty 6p orbitals with antibonding V 3d-O 2p states at the bottom of the conduction band. In Ag₃VO₄ mixing between filled Ag 4d and O 2p states destabilizes states at the top of the valence band leading to a large decrease in the band gap (E_g=2.2 eV). In CeVO₄ excitations from partially filled 4f orbitals into the conduction band lower the effective band gap to 1.8 eV. In the Ce_1−xBi_xVO₄ (0≤x≤0.5) and Ce_1−xY_xVO₄ (x=0.1, 0.2) solid solutions the band gap narrows slightly when Bi³⁺ or Y³⁺ are introduced. The nonlinear response of the band gap to changes in composition is a result of the localized nature of the Ce 4f orbitals.     

Bandgap Engineering of Lead‐Free Double Perovskite Cs2AgBiBr6 through Trivalent Metal Alloying

The double perovskite family, A₂M^IM^IIIX₆, is a promising route to overcome the lead toxicity issue confronting the current photovoltaic (PV) standout, CH₃NH₃PbI₃. Given the generally large indirect band gap within most known double perovskites, band‐gap engineering provides an important approach for targeting outstanding PV performance within this family. Using Cs₂AgBiBr₆ as host, band‐gap engineering through alloying of In^III/Sb^III has been demonstrated in the current work. Cs₂Ag(Bi_1−x M_x )Br₆ (M=In, Sb) accommodates up to 75 % In^III with increased band gap, and up to 37.5 % Sb^III with reduced band gap; that is, enabling ca. 0.41 eV band gap modulation through introduction of the two metals, with smallest value of 1.86 eV for Cs₂Ag(Bi_0.625Sb_0.375)Br₆. Band structure calculations indicate that opposite band gap shift directions associated with Sb/In substitution arise from different atomic configurations for these atoms. Associated photoluminescence and environmental stability of the three‐metal systems are also assessed.     

Photocatalytic activity of a Bi-based oxychloride Bi(3)O(4)Cl

A Bi-based oxychloride Bi(3)O(4)Cl with a layered structure as a novel efficient photocatalyst was studied in the present paper. The compound synthesized by a solid-state reaction method has a band gap of 2.79 eV. The material possesses a fair visible-light-induced photocatalytic activity. Generally, the photocatalytic efficiency of Bi(3)O(4)Cl for degrading methyl orange (MO) is higher than that of anatase TiO(2) under UV light illumination. The dispersion of Ag over Bi(3)O(4)Cl leads to an obvious increase in the photocatalytic performance. The MO decolorization over Bi(3)O(4)Cl is mainly initiated by a photocatalytic process. The photocatalytic activity is discussed in close connection with the crystal structure and the electronic structure in details.     

Syntheses, structures, physical properties, and theoretical studies of CeMxOS (M = Cu, Ag; x approximately 0.8) and CeAgOS

Black single crystals of the two nonstoichiometric cerium coinage-metal oxysulfide compounds CeCu(x)OS and CeAg(x)OS (x approximately 0.8) have been prepared by the reactions of Ce2S3 and CuO or Ag2O at 1223 or 1173 K, respectively. A black powder sample of CeAgOS has been prepared by the stoichiometric reaction of Ce2S3, CeO2, Ag2S, and Ag at 1073 K. These isostructural materials crystallize in the ZrSiCuAs structure type with two formula units in the tetragonal space group P4/nmm. Refined crystal structure results and chemical analyses provide evidence that the previously known anomalously small unit-cell volume of LnCuOS for Ln = Ce (Ln = rare-earth metal) is the result of Cu vacancies and the concomitant presence of both Ce3+ and Ce4+. Both CeCu(0.8)OS and CeAgOS are paramagnetic with mu(eff) values of 2.13(6) and 2.10(1) mu(B), respectively. CeCu(0.8)OS is a p-type semiconductor with a thermal activation energy Ea = 0.22 eV, sigma(electrical) = 9.8(1) 10(-3) S/cm at 298 K, and an optical band gap Eg < 0.73 eV. CeAgOS has conductivity sigma(conductivity) = 0.16(4) S/cm and an optical band gap Eg = 0.71 eV at 298 K. Theoretical calculations with an on-site Coulomb repulsion parameter indicate that the Ce 4f states are fully spin-polarized and are not localized in CeCuOS, CeCu(0.75)OS, or CeAgOS. Calculated band gaps for CeCu(0.75)OS and CeAgOS are 0.6 and 0.8 eV, respectively.     

层状K4Ag2Sn3S9·2H2O的溶剂热合成与表征

用溶剂热法合成了K4Ag2Sn3S9·2H2O,通过单晶X射线衍射、DSC、TG、IR和紫外漫反射光谱等手段对其进行了表征.结果表明,K4Ag2Sn3S9·2H2O属单斜晶系,P21/m空间群,a=0.78071(2)nm,b=2.73508(1)nm,c=1.05008nm,α=90°,β=103.87(6)°,γ=90°,Z=4.其层状结构内具有一维孔道,钾离子分离在层间及层内孔道中.     

Zn_xCd_(1-x)S∶Ag纳米晶的合成及其光学性质研究

以巯基丙酸(MPA)为稳定剂,利用共沉淀法制备了水溶性的Ag掺杂的ZnxCd1-xS合金型纳米晶.Ag掺杂后ZnxCd1-xS纳米晶产生新的发射峰,并且发光效率得到了有效提高.通过改变纳米粒子中Zn/Cd比例可有效地调控ZnxCd1-xS∶Ag纳米晶的吸收带隙宽度,同时可以在425~603 nm之间实现对ZnxCd1-xS∶Ag纳米晶发射峰位的连续调控.     

On‐surface Synthesis of a Semiconducting 2D Metal–Organic Framework Cu3(C6O6) Exhibiting Dispersive Electronic Bands

A 2D metal–organic framework (2D‐MOF) was formed on a Cu(111) substrate using benzenehexol molecules. By means of a combination of scanning tunneling microscopy and spectroscopy, X‐ray photoelectron spectroscopy and density‐functional theory, the structure of the 2D‐MOF is determined to be Cu₃(C₆O₆), which is stabilized by O–Cu–O bonding motifs. We find that upon adsorption on Cu(111), the 2D‐MOF features a semiconductor band structure with a direct band gap of 1.5 eV. The O–Cu–O bonds offer efficient charge delocalization, which gives rise to a highly dispersive conduction band with an effective mass of 0.45 m_e at the band bottom, implying a high electron mobility in this material.