辉光放电等离子体辅助XeCl准分子激光溅射沉积碳氮薄膜

利用直流辉光放电等离子体辅助的脉冲激光沉积技术在Si衬底上生长了碳氮薄膜.通过扫描电子显微镜、X射线衍射、X射线光电子能谱、俄歇电子能谱等多种手段,对薄膜的形貌、成分、晶体结构、价键状态等特性进行了分析和确定.结果表明,沉积薄膜为含有非晶SiN和晶态氮化碳颗粒结构,晶态成分呈多晶态,主要为α-C₃N₄相、β-C₃N₄相,晶粒大小为40—60nm.碳氮之间主要以C-N非极性共价键形式相结合. 关键词： 脉冲激光沉积 直流辉光放电 碳氮薄膜     

AlN/Si3N4纳米多层膜的外延生长与力学性能

采用射频磁控溅射方法制备单层AlN, Si₃N₄薄膜和不同调制周期的AlN/Si₃N₄纳米多层膜.采用X射线衍射仪、高分辨透射电子显微镜和纳米压痕仪对薄膜进行表征.结果发现,多层膜中Si₃N₄层的晶体结构和多层膜的硬度依赖于Si₃N₄层的厚度.当AlN层厚度为4.0nm、 Si₃N₄层厚度 关键词： 3N₄纳米多层膜')" href="#">AlN/Si₃N₄纳米多层膜 外延生长 应力场 超硬效应     

微波等离子体化学气相沉积法制备C3N4薄膜的结构研究

采用微波等离子体化学气相沉积法,用高纯氮气(99.999%)和甲烷(99.9%)作反应气体,在单晶Si(100)基片上沉积C₃N₄薄膜.利用扫描电子显微镜观察薄膜形貌,表明薄膜由密排的六棱晶棒组成.X射线衍射和透射电子显微镜结构分析说明该薄膜主要由β-C₃N₄和α-C₃N₄组成,并且这些结果与α-C₃N₄相符合较好.由虎克定律近似关 关键词： 3N₄')" href="#">C₃N₄ 微波等离子体化学气相沉积法 薄膜沉积     

原位氧化Zn3N2制备p型ZnO薄膜的性能研究

采用射频反应溅射法在玻璃衬底上制备Zn₃N₂薄膜，然后向真空室中通入纯氧气进行热氧化制备ZnO薄膜.利用X射线衍射、扫描电子显微镜、霍尔效应测量、透射光谱和光致发光光谱等表征技术，研究了氧化温度和氧化时间对ZnO薄膜的结晶质量、电学性质和光学性能的影响.研究结果显示，450 ℃ 下氧化2 h后的样品中除含有ZnO外，还有Zn₃N₂成分，500 ℃下氧化2 h可以制备出电阻率为0.7 Ωcm，空穴载流子浓度为10^{关键词： p型ZnO薄膜 3N₂薄膜')" href="#">Zn₃N₂薄膜 射频溅射 原位氧化}     

Si3N4在h-AlN上的晶体化与AlN/Si3N4纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列具有不同Si₃N₄层厚度的AlN/Si₃N₄纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.研究了Si₃N₄层在AlN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜生长结构与力学性能的影响.结果表明,在六方纤锌矿结构的晶体AlN调制层的模板作用下,通常溅射条件下以非晶态存在的Si₃N₄层在其厚度小于约1nm时被强制晶化为结构与AlN相同的赝形晶体,AlN/Si₃N₄纳米多层膜形成共格外延生长的结构,相应地,多层膜产生硬度升高的超硬效应.Si₃N₄随层厚的进一步增加又转变为非晶态,多层膜的共格生长结构因而受到破坏,其硬度也随之降低.分析认为,AlN/Si₃N₄纳米多层膜超硬效应的产生与多层膜共格外延生长所形成的拉压交变应力场导致的两调制层模量差的增大有关. 关键词： 3N₄纳米多层膜')" href="#">AlN/Si₃N₄纳米多层膜 外延生长 赝晶体 超硬效应     

GaxN2:Zn3-x薄膜的分子束外延生长及其光学和电子输运性能表征

本文采用分子束外延技术,通过对金属分子束的精确控制,在MgO(002)基底上成功生长了Ga_xN₂∶Zn_3-x合金薄膜.高分辨率单晶X光衍射仪表征结果表明Ga_xN₂∶Zn_3-x合金薄膜仍是以(400)Zn₃N₂为主导的复合晶体结构,对衍射数据的分析得到该薄膜晶粒尺寸小.用扫描电子显微镜和能谱射线分析仪对其表面和成分做了深入的分析和讨论,在固定的金属流量比的生长环境下,不同厚度的样品在成膜后x均为0.65,化学通式Zn_2.35Ga_0.65N₂.该结果表明Ga元素属于重度掺杂,同时也体现了分子束外延技术在共掺杂技术中的优越性.本文也测量并讨论了Zn_2.35Ga_0.65N₂薄膜的光学性能,实验得到的1.85 eV的光学带隙与理论推算基本吻合,说明Ga的掺入有Ga-N结构...     

C3N4薄膜的结构与性能研究

用射频等离子体增强化学汽相沉积技术合成C₃N₄薄膜，并采用强迫晶化技术，经透射电子衍射观测，薄膜具有多晶结构．用X射线光电子能谱测试了C，N原子结合能及含氮量．傅里叶变换红外光谱曲线表明薄膜中不含石墨相．测得薄膜的维氏硬度为29.2—50.0GPa 关键词：     

La0.9Sr0.1MnO3薄膜中电流效应研究

用直流磁控溅射法在(100)LaAlO₃衬底上制备了La_0.9Sr_0.1MnO₃薄膜.经退火处理后薄膜的原子力显微镜形貌观测和X射线衍射分析显示具有比较好的质量.电阻率-温度关系表明La_0.9Sr_0.1MnO₃薄膜在281 K处发生金属绝缘体转变.电流在0.01—4 mA范围内，薄膜的峰值电阻率随电流增大而减小，在4 mA下获得了30.5%的峰值电阻率变 关键词： 掺杂锰氧化合物 0.9Sr_0.1MnO₃薄膜')" href="#">La_0.9Sr_0.1MnO₃薄膜 电流诱导效应 相分离理论     

β-C3N4,β-Si3N4和β-Ge3N4的能带结构

采用基于密度泛函理论的线性丸盒轨道原子球近似(LMTO-ASA)从头计算方法,研究了β-C₃N₄,β-Si₃N₄和β-Ge₃N₄的能带结构,得到了它们的能隙分别为:4.1751,5.1788和4.0279eV。对于β-C₃N₄,由于N的部分2p电子占据了非键轨道,禁带宽度较窄;对于β-Si₃N_{4关键词：}     

纳米Cu3N薄膜的制备与性能

采用柱状靶多弧直流磁控溅射法，100℃基底温度下在玻璃衬底上制备了纳米氮化铜(Cu3₃N)薄膜.用x射线衍射研究了不同氮气分压对Cu3₃N薄膜晶体结构 及晶粒尺寸的影响.结果显 示薄膜由Cu3₃N和Cu的纳米微晶复合而成，其中Cu3₃N纳米微晶具有 立方反ReO3₃结构.通 过原子力显微镜对薄膜表征显示，膜表面比较光滑，具有较低的粗糙度.x射线光电子能谱对 薄膜表面的成分分析表明，Cu3 _{关键词： 氮化铜薄膜 多弧直流磁控溅射 3}结构')" href="#">立方反ReO3₃结构     

微波等离子体化学汽相沉积法沉积CNx膜的研究

对用微波等离子体化学汽相沉积法沉积在Si基片上的CN_x膜分别进行Raman散射、X射线光电子能谱、X射线衍射和扫描电子显微镜等技术的分析与测试. Raman散射的研究结果表明在CH₄与N₂的流量比低于1∶8时，CN_x膜的散射谱中以非晶石墨峰的形式出现.当流量比为1∶8时，则表现为较尖锐的C≡N键(2190cm^-1)的特征峰；从X射线光电子能谱的分析结果可以看出C，N成键的方式主要是C≡N键和C—N 关键词：     

脉冲偏压电弧离子镀CNx薄膜研究

用脉冲偏压电弧离子镀通过控制不同的氮流量在(100)单晶Si基片上制备了不同成分的CN_x薄膜.用光学显微镜,XPS,XRD,激光Raman和Nanoindenter等方法研究了薄膜的形貌、成分、结构和性能.结果表明,薄膜表面平整致密、氮含量随着氮流量的降低而降低、结构为非晶且为类金刚石薄膜;随着氮含量从18.9%降低到5.3%(摩尔百分比,全文同),薄膜的硬度和弹性模量单调增加而且增幅较大,其中硬度从15.0 GPa成倍增加到30.0 GPa;通过氮流量的调整能够敏感地改变薄膜中的sp³键的含量,是CN_x薄膜的硬度和弹性模量获得大幅度调整的本质原因. 关键词： x薄膜')" href="#">CN_x薄膜 脉冲偏压 电弧离子镀 硬度     

Improving mechanical properties of a-CNx films by Ti-TiN/CNx gradient multilayer

Amorphous carbon nitride (a-CN_x) films with functional gradient Ti-TiN/CN_x underlayer were deposited by direct current magnetron sputtering. Microstructure and composition of the films were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, atomic force microscope (AFM) and transmission electron microscopy (TEM). Mechanical and tribological properties were investigated by nanoindenter, scratch and ball-on-disk tribometer. The a-CN_x-based films suffer a graphitization process with the increasing deposition temperature, thus the hardness and elastic modulus decrease. With the design of the Ti-TiN/CN_x gradient underlayers, some important advantages of relatively thick CN_x films can be achieved, such as increased hardness, improved adhesion strength, and the wear resistance of the a-CN_x-based films can be also improved significantly.     

高温退火对非晶CNx薄膜场发射特性的影响

采用射频磁控溅射方法在纯N₂气氛中沉积了非晶CN_x薄膜样品，并 在真空中退火至900 ℃.对高温退火引起的CN_x薄膜化学成分、键合结构及其场发射特性方面的变 化进行研究.用傅里叶变换红外光谱和x射线光电子能谱分析样品的内部成分及键合结构的变化，其中sp²键及薄膜中N的含量与薄膜的场发射特性密切相关.退火实验的结果表明 高温退火可以导致CN_x薄膜中N含量大量损失，并在薄膜中形成大量sp^{2< 关键词： x薄膜')" href="#">CN_x薄膜 化学键合 退火温度 场致电子发射}     

Effect of nitrogen content on phase configuration, nanostructure and mechanical behaviors in magnetron sputtered SiCxNy thin films

SiC_xN_y thin films with different nitrogen contents were deposited by way of incorporation of different amounts of nitrogen into SiC_0.70 using unbalanced reactive dc magnetron sputtering method. Their phase configurations, nanostructures and mechanical behaviors were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, high-resolution transmission electron microscopy (HRTEM) and microindentation methods. The result indicated SiC_0.70 and all SiC_xN_y thin films exhibited amorphous irrespective of the nitrogen content. The phase configuration and mechanical behaviors of SiC_xN_y thin films strongly depended on nitrogen content. SiC_0.70 exhibited a mixture consisting of SiC, Si and a small amount of C. Incorporated nitrogen, on one hand linked to Si, forming SiN_x, on the other hand produced CN_x and C at the expense of SiC. As a result, an amorphous mixture consisting of SiC, SiN_x, C and CN_x were produced. Such effects were enhanced with increase of nitrogen content. A low hardness of about 16.5 GPa was obtained at nitrogen-free SiC_0.70. Incorporation of nitrogen or increase of nitrogen content increased the film hardness. A microhardness maximum of ∼29 GPa was obtained at a nitrogen content of 15.7 at.%. This value was decreased with further increase of N content, and finally a hardness value of ∼22 GPa was obtained at a N content of ∼25 at.%. The residual compressive stress was consistent with the hardness in the nitrogen content range of 8.6-25.3 at.%.     

The stability of K2[Pt(CN)4]Cl0·3·x.H2O in wet and dry atmosphere

The behavior of the one-dimensional electrical conductor K₂[Pt(CN)₄Cl_0·3·x.H₂O is studied at several temperatures in both wet and dry atmospheres using chemical analysis, X-ray diffraction and magnetic susceptibility data. It is concluded that the material is a series of hydrates with x between 2.5 and 3, and that a variation in x might influence its physical properties.     

Investigation of SiO2/Si3N4 films prepared on sapphire by r.f. magnetron reactive sputtering

Sapphire is a desired material for infrared-transmitting windows and domes because of its excellent optical and mechanical properties. However, its thermal shock resistance is limited by loss of compressive strength along the c-axis of the crystal with increasing temperature. In this paper, double layer films of SiO₂/Si₃N₄ were prepared on sapphire (α-Al₂O₃) by radio frequency magnetron reactive sputtering in order to increase both transmission and high temperature mechanical performance of infrared windows of sapphire. Composition and structure of each layer of the films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), respectively. Surface morphology and roughness of coated and uncoated sapphire have been measured using a talysurf. Flexural strengths of sapphire sample uncoated and coated with SiO₂/Si₃N₄ have been studied by 3-point bending tests at different temperatures. The results show that SiO₂/Si₃N₄ films can improve the surface morphology and reduce the surface roughness of sapphire substrate. In addition, the designed SiO₂/Si₃N₄ films can increase the transmission of sapphire in mid-wave infrared and strengthen sapphire at high temperatures. Results for 3-point bending tests indicated that the SiO₂/Si₃N₄ films increased the flexural strength of c-axis sapphire by a factor of about 1.4 at 800 °C.     

Si3N4的晶体化和ZrN/Si3N4纳米多层膜的超硬效应

研究了Si₃N₄层在ZrN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜微结构与力学性能的影响. 一系列不同Si₃N₄层厚度的ZrN/Si₃N₄纳米多层膜通过反应磁控溅射法制备. 利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能. 结果表明，由于受到ZrN调制层晶体结构的模板作用，溅射条件下以非晶态存在的Si₃N₄层在其厚度小于0.9 nm时被强制晶化为NaCl结构的赝晶体，ZrN/Si₃N₄纳米多层膜形成共格外延生长的柱状晶，并相应地产生硬度升高的超硬效应. Si₃N₄随层厚的进一步增加又转变为非晶态，多层膜的共格生长结构因而受到破坏，其硬度也随之降低.     

Sputter deposition of high transparent TiO2−xNx/TiO2/ZnO layers on glass for development of photocatalytic self-cleaning application

In this study, TiO_2−xN_x/TiO₂ double layers thin film was deposited on ZnO (80 nm thickness)/soda-lime glass substrate by a dc reactive magnetron sputtering. The TiO₂ film was deposited under different total gas pressures of 1 Pa, 2 Pa, and 4 Pa with constant oxygen flow rate of 0.8 sccm. Then, the deposition was continued with various nitrogen flow rates of 0.4, 0.8, and 1.2 sccm in constant total gas pressure of 4 Pa. Post annealing was performed on as-deposited films at various annealing temperatures of 400, 500, and 600 °C in air atmosphere to achieve films crystallinity. The structure and morphology of deposited films were evaluated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and atomic force microscopy (AFM). The chemical composition of top layer doped by nitrogen was evaluated by X-ray photoelectron spectroscopy (XPS). Photocatalytic activity of samples was measured by degradation of Methylene Blue (MB) dye. The optical transmittance of the multilayer film was also measured using ultraviolet-visible light (UV-vis) spectrophotometer. The results showed that by nitrogen doping of a fraction (∼1/5) of TiO₂ film thickness, the optical transmittance of TiO_2−xN_x/TiO₂ film was compared with TiO₂ thin film. Deposited films showed also good photocatalytic and hydrophilicity activity at visible light.