Substrate-induced freezing of alkane monolayers adsorbed on Au(1 1 1) dependant on the alkane/gold misfit

The molecular structure of the interfaces between pure C_nH_2n+2 (n=10, 12, 14, 16) and Au(1 1 1) surface has been studied by scanning tunneling microscopy. At 291 K, self-organized monolayers with a lamella structure are formed with these alkanes. The ordered monolayers are melting at temperature higher by 46, 28, 15, 5 K than the melting point of bulk C_nH_2n+2 crystals with n=10, 12, 14, 16, respectively. Two kinds of melting process were observed: (i) a direct solid/liquid phase transition within the monolayer for C₁₀H₂₂, C₁₂H₂₆ and C₁₄H₃₀ molecules, (ii) an intermediate phase for C₁₆H₃₄ molecules. This mesophase corresponds to a two-dimensional liquid crystal formed by molecules moving along their axis and along Au1 1 0. These results agree well with calculations using a geometric model taking in account the misfit between the CH₂–CH₂–CH₂ period along alkyl chain and the gold lattice along 1 1 0 direction.     

Molecular associations in binary mixtures of pyridine and chlorobenzene in benzene solution using microwave absorption data

The dielectric relaxation time (τ) of binary mixtures of different molar concentrations of pyridine (C₅H₅N) and chlorobenzene (C₆H₅Cl) in benzene solution at different temperatures (25, 30, 35 and 40 °C) has been calculated by using standard microwave techniques and Gopala Krishna's single frequency (9.875 GHz) concentration variation method. The energy parameters (ΔH_ε, ΔF_ε, and ΔS_ε) for the dielectric relaxation process of the binary mixture containing 0.5 mol fraction of pyridine have been calculated at the respective temperatures. Comparisons have been made with the corresponding energy parameters for the viscous flow (ΔH_η, ΔF_η, and ΔS_η). From the observations it is found that the dielectric relaxation process can be treated as the rate process. Based upon above studies, solute–solvent type of molecular associations arising from the interaction of chlorobenzene and benzene and pyridine and benzene molecules has been proposed. No solute–solute type of molecular association has been observed.     

Electronic conduction properties of Au/C60/p-Si and C60/Au/p-Si sandwich structures: I–V and transducer characteristics

Gold-fullerite [C₆₀]-silicon (p-type) sandwich structures have been fabricated in order to investigate intrinsic cross-sectional and planar electronic conductive properties, in particular the C₆₀/p-Si p–n heterojunction. The turn-on voltage of this p–n heterojunction lies in the range 0.25–0.27 V. The I–V characteristics of the Au/C₆₀/p-Si structure are mostly defined by the bulk specific resistance of the fullerite crystal film itself (6×10⁷ Ω cm). I–V curves in the C₆₀/Au/p-Si structure are shown to be ohmic. Au/C₆₀/p-Si sandwiches irradiated with swift (300 MeV) heavy ions, (⁸⁴Kr¹⁴⁺) to a total fluence 10¹⁰ ion/cm² yield structures which are sensitive to ambient air pressure, specifically in the case of a transverse contact configuration, and if one of the contacts is located on the irradiated part of the fullerite film. The sandwich-structure sensitivity to pressure is 5×10⁻⁶ Pa⁻¹. This exceeds the sensitivity of conventional silicon pressure transducers by almost three orders of magnitude.     

Reactions of π-allyl with atomic oxygen and hydroxyl on Ag(110)

The oxidation of the adsorbed π-allyl (η³-C₃H₅), prepared on atomic oxygen- and hydroxyl-covered Ag(110) by dissociation of allyl chloride (C₃H₅Cl), is investigated with temperature-programmed desorption and high-resolution electron energy loss spectroscopy. Allyl chloride adsorbs molecularly on oxygen-covered Ag(110) at 110 K. Upon heating to 180 K, some allyl chloride dissociates to form π-allyl and atomic chlorine, and the remainder desorbs molecularly. The π-allyl undergoes combustion to form hydroxyl or carbonate until all of the free oxygen is consumed by 200 K. Migratory insertion of hydroxyl into excess π-allyl commences near 220 and finishes by 250 K, forming adsorbed allyl alcohol (C₃H₅OH), which reacts either with excess hydroxyl near 240 K to form allyl alkoxy (η¹(O)-C₃H₅O) and water, or with π-allyl at 250 K to form allyl alkoxy and propylene (C₃H₆). Th allyl alkoxy evolves acrolein (C₃H₄O) by β-hydrogen elimination near 285 K, and propylene is evolved concurrently as the hydrogen released by this reaction rapidly scavenges π-allyl. Finally, the remaining π-allyl dimerizes to form 1,5-hexadiene (C₆H₁₀), which desorbs at 315 K. The gross observations of reaction pathways and temperatures are used to evaluate important aspects of the thermochemistry of these reactions.     

Effects of oxygen flow rate on the properties of HfO2 layers grown by metalorganic molecular beam epitaxy

The investigations on the properties of HfO₂ dielectric layers grown by metalorganic molecular beam epitaxy were performed. Hafnium-tetra-tert-butoxide, Hf(C₄H₉O)₄ was used as a Hf precursor and pure oxygen was introduced to form an oxide layer. The grown film was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and capacitance–voltage (C–V) and current–voltage (I–V) analyses. As an experimental variable, the O₂ flow rate was changed from 2 to 8 sccm while the other experimental conditions were fixed. The XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer effect and the density of trapped charges in the interfacial layer was increased as the oxygen flow rate increased. The observed microstructure indicated the HfO₂ layer was polycrystalline, and the monoclinic phases are the dominant crystal structure. From the C–V analyses, k = 14–16 and EOT = 44–52 were obtained, and the current densities of (3.2–3.3) × 10⁻³ A/cm² were measured at −1.5 V gate voltage from the I–V analyses.     

STM/STS observation of ferrocene derivative adduct to C60 on HOPG

The C₆₀ONCFn cycloadduct (Fn=ferrocene) was prepared in the reaction between C₆₀ and ferrocene oxime, the ferrocene derivative was bound to C₆₀ at the 6–6 bond by a heterocyclic oxygen–nitrogen–carbon ring; the compound was stable in air. The compound dissolved in dichloroethane was deposited on HOPG and observed by UHV STM/STS methods. The molecules of C₆₀ONCFn formed several-microns-long straight chains with clearly visible adducted groups pointing to one side of the chain. The STM/STS observations are discussed within the terms of semiempirical quantum chemical molecular modeling.     

The pionium lifetime in generalized chiral perturbation theory

Pionium lifetime corrections to the nonrelativistic formula are calculated in the framework of the quasipotential–constraint theory approach. The calculation extends an earlier evaluation, made in the scheme of standard chiral perturbation theory, to the scheme of generalized chiral perturbation theory, in which the quark condensate is left as a free parameter. The pionium lifetime is calculated as a function of the combination (a₀⁰−a₀²) of the ππ S-wave scattering lengths with isospin I=0, 2.     

Electrical conductivity, optical and metal–semiconductor contact properties of organic semiconductor based on MEH-PPV/fullerene blend

The electrical conductivity, optical and metal–semiconductor contact properties of the MEH-PPV:C₇₀ organic semiconductor have been investigated. The electrical conductivity results show that the MEH-PPV:C₇₀ film is an organic semiconductor. The optical band gap of the film was found to be 2.06 eV and the fundamental absorption edge in the film is formed by the direct allowed transitions. The refractive index dispersion curve of the film obeys the single oscillator model and E_d and E_o dispersion parameters were found to be 10.61 and 3.89 eV, respectively. The electrical characterization of the ITO/MEH-PPV:C₇₀ diode have been investigated by current–voltage characteristics. ITO/MEH-PPV:C₇₀ diode indicates a non-ideal current–voltage behavior with ideality factor n (2.50) and barrier height φ_B (0.90 eV) values.     

Chemically deposited copper oxide thin films: structural, optical and electrical characteristics

Thin films of copper oxide with thickness ranging from 0.05–0.45 μm were deposited on microscope glass slides by successively dipping them for 20 s each in a solution of 1 M NaOH and then in a solution of copper complex. Temperature of the NaOH solution was varied from 50–90°C, while that of the copper solution was maintained at room temperature. X-ray diffraction patterns showed that the films, as prepared, are of cuprite structure with composition Cu₂O. Annealing the films in air at 350°C converts these films to CuO. This conversion is accompanied by a shift in the optical band gap from 2.1 eV (direct) to 1.75 eV (direct). The films show p-type conductivity, 5×10⁻⁴ Ω⁻¹ cm⁻¹ for a film of thickness 0.15 μm. Electrical conductivity of this film increases by a factor of 3 when illuminated with 1 kW m⁻² tungsten halogen radiation. Annealing in a nitrogen atmosphere at temperatures up to 400°C does not change the composition of the films. However, the conductivity in the dark as well as the photoconductivity of the film increases by an order of magnitude. The electrical conductivity of the CuO thin films produced by air annealing at 400°C, is high, 7×10⁻³ Ω⁻¹ cm⁻¹. These films are also photoconductive.     

η,η′→ππγ with coupled channels

The decays η,η′→π⁺π⁻γ are investigated within an approach that combines one-loop chiral perturbation theory with a coupled channel Bethe–Salpeter equation which satisfies unitarity constraints and generates vector mesons dynamically from composite states of two pseudoscalar mesons. It is furthermore shown that the inclusion of the η′ as a dynamical degree of freedom does not renormalize the Wess–Zumino–Witten term.     

Structures of the O/Cu top layer in O-mediated film growth of Cu on Ru(0001)

In order to characterize the disordered O/Cu surfactant layer causing layer-by-layer growth of Cu on O-precovered Ru(0001), an ordered O/Cu structure is used as substrate to study further Cu growth. The O/Cu structure develops during Cu deposition on O-saturated Ru(0001) at growth temperatures of ca 520 K. It was recently interpreted as being composed of separated wave-like O–Cu–O chains forming a disrupted ‘Cu₂O’ surface layer. Scanning tunneling microscopy (STM) is used to characterize domains and defects of the O/Cu structure and the morphology of the Cu film growing on-top. For temperatures ca 400 K, again an O-mediated layer-by-layer growth of Cu is observed. The post-deposited Cu films display a similar island shape and island density as found for the Cu film growth on O-saturated Ru(0001) where a disordered O/Cu surfactant layer is present. Initially, domains of the ordered O/Cu structure are revealed on-top of the growing Cu film which are rotated by 120° to each other and separated by boundaries where the ordering is disturbed. The domain size drastically decreases with film thickness. As a result, the ordering of the O/Cu top-layer is extinguished already after the deposition of a few Cu monolayers. Finally, the surface displays the same disordered corrugation pattern as the O/Cu surfactant layer. The STM investigations indicate a strong correlation between the O/Cu structure and the disordered O/Cu surfactant layer. This leads to the conclusion that the O/Cu surfactant layer is composed of a random-like arrangement of O–Cu–O strings which locally form disrupted ‘Cu₂O’ fragments.     

Co_(2~-)基Heusler合金Co_2FeAl_(1–x)Si_x(x=0.25,x=0.5,x=0.75)的结构、电子结构及热电特性的第一性原理研究

运用基于密度泛函理论的第一性原理方法,对Co_2FeAl_(1–x)Si_x(x=0.25, 0.5, 0.75)系列Heusler合金的电子结构、四方畸变、弹性常数,声子谱以及热电特性进行了计算研究.结果显示, Co_2FeAl_(1–x)Si_x系列合金的电子结构均为半金属特性,向下自旋态(半导体性)均呈现良好的热电特性,并且随着硅原子浓度的增加功率因子随之增加.计算的声子谱不存在虚频,均满足动力学稳定性条件,弹性常数均满足玻恩稳定性条件,机械稳定性均良好.随着晶格常数c/a的比值变化,体系的能量最低点均出现在c/a=1处,即结构稳定性不随畸变度c/a的变化而变化,说明不存在马氏体相变.此系列合金薄膜的电子结构呈现较高的自旋极化率,在替代浓度x=0.75时自旋极化率达到100%,且当x=0.75时薄膜在畸变度c/a=1.2时存在马氏体相变.随着晶格畸变度的改变,总磁矩也发生变化,且主要由Fe和Co两种过渡金属原子的磁矩变化所决定.     

Charge-transfer bands in alkaline-earth fluoride crystals doped by Eu or Y b ions

Absorption, emission and excitation spectra of CaF₂, SrF₂, BaF₂ crystals doped by Y bF₃ or EuF₃ impurities were studied in 1–12 eV spectral region. The intensive absorption broad bands (denoted as CT₁) were observed in all cases just below the 4f–5d absorption region. Less intensive absorption bands, denoted as CT₂, having energies 1.2–1.5 eV lower than those of CT₁, were observed in CaF₂, SrF₂ crystals doped by EuF₃ or Y bF₃ impurities.

High resolution emission spectra of Eu-doped CaF₂ and SrF₂ crystals excited into CT₁ and CT₂ bands were measured. Under excitation into CT₁ bands, all present Eu sites (C_4v, O_h and some aggregates) were observed in emission spectra. While under excitation into CT₂ bands, only the emission of C_4v sites was observed.     

Magneto-optical and magnetic properties of some solid solutions of C1b-Heusler compounds

The large Kerr effect in PtMnSb has been ascribed to details of its unusual band structure. Substitution of atoms will modify the band structure and consequently alter the Kerr effect. In the present investigation we have determined the magneto-optical properties at room temperature in the energy range 0.5–5 eV of several solid solutions of C1_b−Heusler compounds, comprising the solid solution series Pt_1−xNi_xMnSb, Pt_1−xRh_xMnSb, Ni_1−xCr_xMnSb, Ni_1−xFe_xMnSb and PtMnSb_0.9Sn_0.1. The magnetic and crystallographic properties were determined for the solid solution series Pt_1−xNi_xMnSb, Pt_1−xRh_xMnSb and Ni_1−xCr_xMnSb. Neither of the substitutions leads to a larger Kerr effect than that present in the pure compound. Moreover, it is found that the shape of the spectra does not change significantly. For one case, Ni substituted in PtMnSb, band structure calculations were made for hypothetically ordered compounds. The results agree with the experimental findings that near 1.7 eV magneto-optically active transitions persist on substituting Ni in PtMnSb.     

ELECTRONIC STRUCTURE STUDIES OF THE C60 FILM CONDENSED ON 2H-MoS2(0001) SURFACE

The electronic structure and vibrational spectrum of the C₆₀ film condensed on a 2H- MoS₂(0001) surface have been investigated by X-ray photoelectron spectroscopy (XPS), ul-traviolet photoelectron spectroscopy (UPS), Auger electron spectroscopy (AES) and infrared high-resolution electron-energy-loss spectroscopy (HREELS). AES analysis showed that at low energy side of the main transition, C₆₀ contains a total of three peaks just like that of graphite. However, the energy position of the KLL main Auger transition of C₆₀ looks like that of diamond, indicating that the hybridization of the carbon atoms in C₆₀ is not strictly in sp²- bonded state but that the curvature of the molecular surface introduces some sp²pz- bonded character into the molecular orbitals. XPS showed that the C 1s binding energy in C₆₀ was 285.0eV, and its main line was very symmetric and offered no indication of more than a single carbon species. In UPS measurement the valence band spectrum of C₆₀ within 10eV below the Fermi level (E_F) shows a very distinct five-band structure that character-izes the electronic structure of the C₆₀ molecule. HREEL results showed that the spectrum obtained from the C₆₀ film has very rich vibrational structure. At least, four distinct main loss peaks can be identified below 200 meV. The most intense loss was recorded at 66 meV, and relatively less intense losses were recorded at 95, 164 and 197meV at a primary energy of electron beam E_P = 2.0eV. The other energy-loss peaks at 46, 136, 157 and 186meV in HREEL spectrum are rather weak. These results have been compared to infrared spectrum data of the crystalline solid C₆₀ taken from recent literatures.     

Pressure–temperature studies on conductivity of TlX(X=Cl,Br,I) compounds:: I: phase diagram. II: ionic mobility

We have measured the conductivity σ of TlX(X=Cl, Br, I) compounds up to 5.3 GPa and between 300–823 K. The σ–T dependence for all compounds can be divided into three distinct regions: (i) low temperature (LT), <400 K, with unusual negative σ–T dependence, (ii) intermediate temperature (IT), 400<650 K, with positive σ–T dependence and (iii) high temperature (HT), T>650 K, with positive σ–T dependence. The σ–T isobars were used to construct the T–P solid phase diagram for each compound. The LT region data indicate a new meta-stable phase in the 1.0–3.5 GPa range. The LT→IT transition is characterized by an inverse σ–T dependence followed by normal Arrhenius behavior up to and including the HT region. The extrapolation to 1 atm of the P-dependent boundary between IT and HT regions above 3 GPa for each compound in the P–T plot yields a value close to its respective normal (1 atm) T_melt suggesting a solid order–disorder transition type paralleling -AgI behavior. The abrupt drop in conductivity in the LT region for P between 2.5–4.1 GPa of all compounds is at variance with the Arrhenius behavior observed for unperturbed ion migration implying the appearance of a second factor overriding the Arrhenius temperature dependence. Normal Arrhenius σ–T dependence prevails in both IT and HT regions with Q_c values of 85–100 kJ mol⁻¹ and 50–75 kJ mol⁻¹, respectively. The higher conductivities at 0.4 GPa for TlBr and TlI relative to their 1 atm data and the increasing σ with P are in strong contrast to the normal σ-P behavior of TlCl. The dependence of activation volume ΔV^‡ on T for TlCl, i.e. ΔV^‡>0, shows abnormally high values with a maximum at 500 K for P<3.0 GPa but reasonable ΔV^‡ values appear above 3.0 GPa. The ΔV^‡–T dependence for both TlBr and TlI with ΔV^‡<0 is incompatible with an ion transport mechanism suggesting an electronic conduction process and implying an ionic–metallic transition at higher pressures. These contrasting conductivity features are discussed and interpreted in terms of electronegativity differences and bonding character rather than structure.     

NMR study of solid C60(γ-cyclodextrin)2

A solid complex of C₆₀ with γ-cyclodextrin (γ-CyD) was examined with NMR spectroscopic methods in order to understand the dynamics of C₆₀, and the interaction between C₆₀ and γ-CyD. A ¹³C solid-state cross-polarization magic angle spinning (CP/MAS) NMR spectra shows C₆₀ resonance at 142.6 ppm. This provides the evidence of interaction between ¹³C spins in C₆₀ and ¹H spins in the γ-CyD host. Ambient temperature experiments on the ¹³C CP/MAS NMR, with varying contact time, shows that the water associated with γ-CyDs plays an important role in the nuclear relaxation processes. The dynamics of C₆₀ in γ-CyD was investigated using temperature and field-dependent ¹³C spin-lattice relaxation time measurements. The influence of water on the dynamics of C₆₀ was less significant below 250 K.     

Deposition and characterization of carbon nitride films from hexamethylenetetramine/N2 by microwave plasma-enhanced chemical vapor deposition

Carbon nitride thin films were deposited on Si(1 0 0) substrate by microwave plasma-enhanced chemical vapor deposition (PECVD). Hexamethylenetetramine (HMTA) was used as carbon and nitrogen source while N₂ gas was used as both nitrogen source and carrier gas. The sp³-bonded C---N structure in HMTA was considered significantly in the precursor selection. X-ray diffraction analysis indicated that the film was a mixture of crystalline - and β-C₃N₄ as well as graphitic-C₃N₄ and β-Si₃N₄ which were not easily distinguished. Raman spectroscopy also suggested the existence of - and β-C₃N₄ in the films. X-ray photoelectron spectroscopy study indicated the presence of sp²- and sp³-bonded C---N structures in the films while sp³C---N bonding structure predominated to the sp² C---N bonding structure in the bulk composition of the films. N was also found to be bound to Si atoms in the films. The product was, therefore, described as CN_x:Si, where x depends on the film depth, with some evidences of crystalline C₃N₄ formation.     

Decomposition mechanism of triethylindium (TEI) on a GaP(0 0 1)-(2×1) surface studied by LEED, AES, TPD and HREELS

Adsorption and decomposition of triethylindium (TEI: (C₂H₅)₃In) on a GaP(0 0 1)-(2×1) surface have been studied by low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), temperature-programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). It is found from the TPD result that ethyl radical and ethylene are evolved at about 300–400 and 450–550 K, respectively, as decomposition products of TEI on the surface. This result is quite different from that on the GaP(0 0 1)-(2×4) surface. The activation energy of desorption of ethyl radical is estimated to be about 93 kJ/mol. It is suggested that TEI is adsorbed molecularly on the surface at 100 K and that some of TEI molecules are dissociated into C₂H₅ to form P–C₂H₅ bonds at 300 K. The vibration modes related to ethyl group are decreased in intensity at about 300–400 and 450–550 K, which is consistent with the TPD result. The TEI molecules (including mono- and di-ethylindium) are not evolved from the surface. Based on the TPD and HREELS results, the decomposition mechanism of TEI on the GaP(0 0 1)-(2×1) surface is discussed and compared with that on the (2×4) surface.     

Structure, oxygen stoichiometry and electrical conductivity in the system Sr-Ce-Co-O

Mixed oxides in the system S-Ce-Co-O were prepared by solid state reaction and by freeze-drying of precursor compounds followed by thermal treatment. Two types of perovskite oxides exist in the system: Solid solutions of the type Sr_{1 − y}Ce_yCoO_{3 − x} and mixed oxides of the type (1 − y)SrCeO₃ − ySrCoO_{3 − x}. Microstructures and phase compositions were determined by electron microscopy and X-ray diffraction. SrCoO_{3 − x} forms a solid solution of ceria on the A-site in the strontium cobaltite lattice up to 0.15 mol Ce. This solid solution corresponds to the high-temperature structure of pure SrCoO_{3 − x} and is characterized by high oxygen exchange and electrical conductivity. The oxygen deficiency x was measured by solid electrolyte coulometry. The oxygen deficiency of solid solutions Sr_{1 − y}Ce_yCoO_{3 − x} increases with temperature and decreases with pO₂ in the ambient atmosphere and with increasing Ce dopant concentration. The pO₂-T-x diagram of the solid solution was determined. The T, pO₂ and dopant concentration dependencies of electrical conductivity were measured by a four-point d.c. technique. By Ce doping strontium cobaltite becomes a stabilized high-conductive material (maximum conductivity: 500 S cm⁻¹ at 400 °C, E_a = 0.025 eV, p-type). Above this temperature the T-coefficient of the conductivity changes from positive (semiconducting) to negative values.