Investigation on the electric-field-induced Pockels effect and optical rectification in near-intrinsic silicon samples

Based on the classical polarization theory, we studied and specified the physical mechanism of the electric-field-induced (EFI) Pockels effect and optical rectification in the space charge region of a near-intrinsic silicon sample with the planar capacitor structure. Especially, the effect of the applied DC bias on these EFI effects was investigated. The results show that the electro-optic signal from Pockels effect in silicon linearly increases with the applied DC voltage and the modulating voltage, and the signal of optical rectification is linearly enhanced by the DC bias as well, but the polarization characteristic of optical rectification does not vary. The enhancement of these EFI effects is mainly owed to the strengthening of the built-in field and the extension of the space charge region in the silicon sample. The Kerr effect of silicon was also detected and contrasted against the EFI Pockels effect, and it is verified that the EFI Pockels effect is much stronger than the Kerr effect in the silicon sample. These EFI effects are significant for the development of silicon photonics or silicon optoelectronics.     

Nonlinear cross-phase modulation with intense single-cycle terahertz pulses

We have demonstrated nonlinear cross-phase modulation in electro-optic crystals using intense, single-cycle terahertz (THz) radiation. Individual THz pulses, generated by coherent transition radiation emitted by subpicosecond electron bunches, have peak energies of up to 100 microJ per pulse. The time-dependent electric field of the intense THz pulses induces cross-phase modulation in electro-optic crystals through the Pockels effect, leading to spectral shifting, broadening, and modulation of copropagating laser pulses. The observed THz-induced cross-phase modulation agrees well with a time-dependent phase-shift model.     

Electrical properties and Pockels effect in BaTiO_{3}/SrTiO_{3} superlattices

The electrical and linear electro-optical properties of BaTiO $_{3}$ (BT)/SrTiO $_{3}$ (ST) superlattices epitaxially grown on ST substrate are theoretically investigated using a microscopic quantum mechanical model based on the orbital approximation in correlation with the dipole–dipole interaction. Both the first-, second-, and third-order electronic polarizabilities were considered in this calculation in order to obtain accurate results for both the spontaneous local electric field, spontaneous polarization, relative dielectric constant, and linear electro-optic coefficients (Pockels constants) of BT/ST superlattices. The calculations show that the spontaneous local electric field, spontaneous polarization and linear electro-optic coefficients of BT/ST superlattices increase with their content in BT while the relative dielectric constant increases with their content in ST. Moreover, we have shown that significant enhancement of the linear electro-optic coefficients can be achieved in BT/ST superlattices. This enhancement, which concerns the ST as well as the BT layers, arises from the combined effects of strain, induced in the BT layers by the epitaxial growth, and internal polarizing electric field originating in the BT layers and acting on the electronic clouds of the polarizable constituent ions of the system.     

Electro-optically forbidden or enhanced spin-to-orbital angular momentum conversion in a focused light beam

We demonstrate that the conversion of spin-to-orbital angular momentum in a focused vectorial light beam can be forbidden or enhanced by the electric-field-erased or increased spatial anisotropy of a uniaxial crystal undergoing the Pockels effect. A focused right-handed circularly polarized quasi-Gaussian beam incident on an electro-optic crystal strontium barium niobate is taken to illustrate the effect, and a conversion-forbidden electric field E(0)=-16.87 kV/cm is found. Of special interest is that single photons generated in this effect exhibit an entanglement of 2 deg of freedom of spin and orbital angular momentum, and it is electro-optically controllable.     

Measurement of the surface strain induced by reconstructed surfaces of GaAs (001) using photoreflectance and reflectance-difference spectroscopies

We report photoreflectance-difference and reflectance-difference measurements on reconstructed GaAs (001) surfaces. From these data the linear and quadratic electro-optic coefficient spectra are determined in the important 2.8-3.4 eV spectral region. The surface strain and fields induced by the surface reconstruction are also determined. We show experimentally that between c(4x4) and (2x4) surfaces, there is an inversion of the surface electric field which we attribute to a direct piezo-electric effect related to the surface strain induced by reconstruction.     

温度对铌酸锂电光相位调制特性的影响

利用折射率椭球基本理论对线性电光效应进行了分析,对单轴晶体铌酸锂电光相位调制器的温度特性进行了研究。通过计算机进行数值模拟计算,分析了加电场时光通过LiNbO3电光调制器后出射光的相位变化与温度间的关系,得出在横向和纵向调制中温度对相位改变的影响。研究发现,无论在横向还是在纵向调制下,入射光偏振方向不同但其各自受温度影响的相位变化趋势大体一致,即随着晶体中温度的增加而增大。计算结果表明,LiNbO3电光调制的最佳使用方案为：电场沿x主轴方向施加,入射光偏振方向为感应主轴x’方向,且LiNbO3电光调制器粟用横向相位调制方式。     

等离子体电极普克尔盒电光开关单脉冲过程数值模拟

采用流体模型对等离子体电极普克尔盒(PEPC)电光开关单脉冲过程进行了数值模拟分析.模型包括带电粒子连续性方程、动量守恒方程、电子平均能量方程及空间电位泊松方程.分别采用隐式指数差分格式，超松弛迭代法(SOR)和经典四阶龙格-库塔法(R-K)对带电粒子连续性方程，泊松方程和电子平均能量方程进行数值求解.模拟分析了PEPC单脉冲过程中的带电粒子浓度、电子温度、空间电场、PEPC的放电电流、晶体两侧电压和开关效率的时间演化特性.模型得出了PEPC中气体放电等离子体的微观物理过程与PEPC宏观参量的关系，对设计 关键词： 等离子体电极普克尔盒 电光开关 数值模拟 气体放电     

加偏置电场的抛物量子阱中的电光效应

本文利用密度矩阵方法得到了加偏置电场的抛物量子阱中电光效应的解析表达式,并以典型的GaAs抛物量子阱为例进行了数值计算研究结果表明,电光效应随偏置电场和抛物势频率的增大而增强,同时也表明GaAs量子阱中的电光效应比体GaAs中的要强一个数量级以上。     

Pockels effect in short period silicon germanium superlattices

We introduce a simple method of calculating Pockels coefficients in ordered SiGe superlattices and show that the Pockels effect in them can be half as strong as in GaAs, thereby opening a path to efficient CMOS-compatible electro-optic modulators.     

Electric-field induced strain in biological tissues

This paper reports a new effect whereby a physiological-level direct-current electrical field (at 1.4 V/cm) can induce time-varying mechanical strain in various types of biological tissues and gel phantoms. This effect cannot be explained by the piezoelectric effect, tissue contraction, temperature changes, and electrorestriction. The induced strain in tissues was analyzed by processing ultrasound echo signals. The sample expanded perpendicularly to the applied electric field. The expansion rate depended on the history of the applied electric field. The speed of sound changed little compared with the expansion. The new effect might be related to electrokinetic effects.     

Pockels effect of water in the electric double layer at the interface between water and transparent electrode

We have obtained the first experimental evidence for the Pockels effect of water, which is induced by a high electric field in the electric double layer (EDL) on the water-transparent electrode interface. The electric-field induced energy shift of the visible interference fringes of a 300 nm indium-tin-oxide (ITO) electrode layer is observed, indicating a negative refractive index change at the interface. Numerical calculation reproduces well the experimental observation, showing that the signal mainly originates from water in the EDL. The Pockels constants of water are estimated to be r₃₃ = 5.1 × 100 pm/V and r₁₃ = 1.7 × 100 pm/V. The large anisotropy of the Pockels effect of water is deduced from the incidence angle dependence of the p-polarization signal. At the same time, the ITO shows a blue shift of the band gap in the UV due to the band population effect in the space charge layer. The plasma frequency in the near IR is also expected to increase due to the band population effect, since the ITO has a high doped carrier population close to metal. A negative refractive index change in the ITO space charge layer is induced from both effects, but its effect on the signal is estimated to be much smaller than that of the negative refractive index change of water in the EDL.     

边界主动加热管理平均功率普克尔盒热效应

建立了平均功率激光辐照下,边界主动加热的电光晶体内3维各向异性热传输有限元模型及其热应力双折射模型,在此基础上分析了等离子体普克尔盒热效应。提出了边界主动加热控制电光晶体横向温度梯度热管理思想,并给出平均功率普克尔盒的光开关性能。结果表明:对于50J/10Hz、光束口径为50mm×30mm的激光系统,普克尔盒最大退偏损耗为3.58%,平均退偏损耗为0.9%,波前畸变为1.59λ。采用边界加热控制后,当加热功率密度为500W/m2时,最大退偏损耗为0.17%、平均退偏损耗为0.05%、波前畸变为0.26λ,普克尔盒热效应显著降低,满足设计要求。     

边界主动加热管理平均功率普克尔盒热效应

建立了平均功率激光辐照下,边界主动加热的电光晶体内3维各向异性热传输有限元模型及其热应力双折射模型,在此基础上分析了等离子体普克尔盒热效应。提出了边界主动加热控制电光晶体横向温度梯度热管理思想,并给出平均功率普克尔盒的光开关性能。结果表明：对于50 J/10 Hz、光束口径为50 mm×30 mm的激光系统,普克尔盒最大退偏损耗为3.58%,平均退偏损耗为0.9%,波前畸变为1.59λ。采用边界加热控制后,当加热功率密度为500 W/m2时,最大退偏损耗为0.17%、平均退偏损耗为0.05%、波前畸变为0.26λ,普克尔盒热效应显著降低,满足设计要求。     

Electro-optic effects induced by the built-in electric field in a {001}-cut silicon crystal

Pockel's effect and optical rectification induced by the built-in electric field in the space charge region of a silicon surface layer are demonstrated in a {001}-cut high-resistance silicon crystal. The half-wave voltage is about203 V, deduced by Pockel's effect. The ratio X~(2)zxxX~(2)zzz is calculated to be about 0.942 according to optical rectification. Our comparison with the Kerr signal shows that Pockel's signal is much stronger. This indicates that these effects are so considerable that they should be taken into account when designing silicon-based photonic devices.     

Influence of a weak magnetic field on microplasticity of silicon crystals

The possibility of magnetic ordering at dangling bonds in dislocation cores has been investigated theoretically. It has been experimentally shown that magnetic ordering in dislocations affects the spin-dependent effects occurring in dislocation crystals of silicon. It has been found that preliminary magnetic treatment of silicon crystals in a weak magnetic field leads to the suppression of the electroplastic effect induced in silicon crystals excited by an electric current. It has been assumed that a change in the microplasticity under the combined action of a magnetic field and an electric current is caused by a weakening of spin-dependent recombination at dislocation dangling bonds.     

Ambichiral,electro-optic,circular-polarization rejection filters: theory

Ambichiral, electro-optic, circular-polarization rejection filters made of materials with $\overline{4}$2m point group symmetry are proposed to exploit the Pockels effect to increase the effective birefringence, thereby leading to thinner filters than without exploiting the Pockels effect.     

Electro-optic lithium niobate metasurfaces

Many applications of metasurfaces require an ability to dynamically change their properties in the time domain. Electrical tuning techniques are of particular interest, since they pave a way to on-chip integration of metasurfaces with optoelectronic devices.In this work, we propose and experimentally demonstrate an electro-optic lithium niobate(EO-LN) metasurface that shows dynamic modulations to phase retardation of transmitted light. Quasi-bound states in the continuum(QBIC) are observed from this metasurface. By applying external electric voltages, the refractive index of lithium niobate(LN) is changed by Pockels EO nonlinearity, leading to efficient phase modulations to the transmitted light around the QBIC wavelength. The EO-LN metasurface developed in this study opens up new routes for potential applications in the field of displaying, pulse shaping, and spatial light modulating.     

Spin-valley Hall conductivity of doped ferromagnetic silicene under strain

The spin-valley Hall conductivity(SHC-VHC) of two-dimensional material ferromagnetic graphene's silicon analog,silicene, is investigated in the presence of strain within the Kubo formalism in the context of the Kane–Mele Hamiltonian.The Dirac cone approximation has been used to investigate the dynamics of carriers under the strain along the armchair(AC) direction. In particular, we study the effect of external static electric field on these conductivities under the strain.In the presence of the strain, the carriers have a larger effective mass and the transport decreases. Our findings show that SHC changes with respect to the direction of the applied electric field symmetrically while VHC increases independently.Furthermore, the reflection symmetry of the structure has been broken with the electric field and a phase transition occurs to topological insulator for strained ferromagnetic silicene. A critical strain is found in the presence of the electric field around 45%. SHC(VHC) decreases(increases) for strains smaller than this value symmetrically while it increases(decreases) for strains larger than one.     

Direct measurement of the intersubband electro-optic coefficient in asymmetric multiple quantum wells

An extremely large electro-optic coefficient in asymmetric quantum well systems has been inferred from optical rectification measurements. To date, however, a direct measurement of the electro-optic coefficient in these materials has not been performed. We present a method to directly measure the electro-optic coefficient in an asymmetric quantum well systemconsisting of 30 Å GaAs wells, 65 Å Al(0.20)Ga(0.80)As step barriers, and 500 Å Al(0.40)Ga(0.60)As barriers. The devices consist of short waveguides with asymmetric quantum well cores. The waveguide endfaces are polished to form Fabry–Perot cavities. Electrodes are deposited running parallel to the waveguides to apply electric fields. The waveguides are analyzed using a Fourier transform infrared spectrometer. Interference fringes are observed in the reflected spectra at room temperature. The fringe spacing yields the refractive index of the material, while plots of the refractive index versus applied electric field yield the electro-optic coefficient. Absorption measurements through these waveguides showed the characteristic polarization dependent intersubband absorption. Because the electrodes appeared to be Schottky like, a large voltage was applied across the device and the voltage across the quantum wells was estimated from the device leakage current and the current-voltage characteristics of a similar device structure after scaling for length, area, and doping. There may be some uncertainty in this approximation. The maximum applied electric field is estimated to be 2.3 kV cm⁻¹. No anomalous effects were observed in the Fabry–Perot fringe pattern in the presence of this electric field, indicating the electro-optic coefficient in these waveguides is most likely less than 0.9 nm V⁻¹over a wide wavelength range. Clearly, however, measurements need to be performed at higher electric fields to accurately measure the electro-optic coefficient.