等离子体浸没离子注入非导电聚合物的适应性及栅网诱导效应的研究

本文建立了绝缘材料等离子体浸没离子注入过程的动力学Particle-in-cell(PIC)模型, 将二次电子发射系数直接与离子注入即时能量建立关联, 研究了非导电聚合物厚度、介电常数和二次电子发射系数对表面偏压电位的影响规律以及栅网诱导效应. 研究结果表明: 非导电聚合物较厚时, 表面自偏压难以实现全方位离子注入, 栅网诱导可以间接为非导电聚合物提供偏压, 并抑制二次电子发射, 为厚大非导电聚合物表面等离子体浸没离子注入提供了有效途径.     

Energy barriers at the interfaces in the MIS system Me-Yb2O3-Si

The electrophysical properties of silicon MIS structures with ytterbium oxide as the insulator are investigated. It is established that the electrical conductivity of the MIS structures are described by a Poole-Frenkel mechanism. The capacitance-voltage curves are used to measure the trapped charge in the insulator and the density of surface states. The energy barriers for electrons at the interfaces are determined by the method of internal photoemission of charge carriers into the insulator. The parameters of deep electron traps in ytterbium oxide are investigated. Zh. Tekh. Fiz. 69, 60–64 (April 1999)     

A method of charge measurement for contact electrification

A method for studying contact electrification charge between different materials was developed. Physical models for the contact electrification measurement system of metal/metal, metal/insulator and insulator/insulator were proposed, where the relationships between charge and measuring potential were developed. According to the models, an electrification charge measurement system was built. As an example of using the method, contact electrification experiment between polytetrafluoroethylene (PTFE) and carbon steel plates was conducted. Comparison of the charge results by this method and Faraday cup method was made, which suggested that the current method reduced the error resulted from the charge dissipation.     

New techniques to evaluate the incendivity of insulators

New techniques for evaluating the incendiary behavior of insulators is presented. The onset of incendive brush discharges in air is evaluated using standard spark probe techniques for the case simulating approaches of an electrically grounded sphere to a charged insulator in the presence of a flammable atmosphere. However, this standard technique is unsuitable for the case of brush discharges that may occur during the charging–separation process for two insulator materials. We present experimental techniques to evaluate this hazard in the presence of a flammable atmosphere which is ideally suited to measure the incendiary nature of micro-discharges upon separation, a measurement never before performed. Other measurement techniques unique to this study include: surface potential measurements of insulators before, during and after contact and separation, as well as methods to verify fieldmeter calibrations using a charge insulator surface opposed to standard high voltage plates.     

Charge distribution in a MIS insulator from spectral characteristics of photoemission current

The field dependence of photoemission currents in a MIS structure was derived for the case when the space charge is randomly distributed over the insulating layer. It was found analytically that the position of the top of the potential barrier for electrons photoinjected from the gate into the insulator is defined by the derivative of this barrier with respect to the external field strength. A method for correctly determining the space charge profile in a MIS insulator is suggested. The profile is derived from a family of spectral characteristics taken at different gate voltages. The method is especially suitable for profiling the negative charge in MIS insulators.     

Characterization of charge distribution on the high voltage glass insulator string

Irregularity in charge distribution of an insulator may lead to accelerated aging and electrical breakdown. However, knowledge of charge distribution on the insulation surface is still insufficient albeit has gained worldwide attention. The insufficiency is particularly on the charge profile along the string insulator under AC excitation. Therefore, charges distributions on the surfaces of glass insulators without installed grading ring are investigated in this paper. Simulation and experimental results were found in good agreement when studying the charge distribution pattern along glass insulator string where the polarity of charge swinging occurs at the center of suspension string insulator of I-type.     

不同应用条件下最佳绝缘子构型

绝缘子的沿面闪络制约着脉冲功率系统向高电压、大电流方向发展,总结了几种实际应用条件下的最佳绝缘子构型,并对不同角度下绝缘子表面的带电情况进行了分析。结果表明,表面电荷对不同绝缘子构型的性能起着至关重要的作用,需要根据不同的应用条件来开展实验研究以确定最佳的绝缘子构型。     

Electric field and the charge distribution on the surface of an insulator in a vacuum

The free charge steady-state distribution over the insulator surface that arises in a strong electric field in a vacuum can be found by solving the boundary-value problem for the electrostatic field strength if the angle between the field vector and vacuum-insulator interface is given. A general solution to this boundary-value problem is derived for the case of an in-plane field and rectilinear interfaces. Laws of charge and field formation that follow from the solution obtained are considered. Formulas for the electric field strength and charge density in terms of elementary functions are obtained for a number of particular cases. Power-type expressions for the electric field and a critical angle between the electrode and insulator surface that describe the field behavior and charge distribution near the vacuum-insulator-electrode contact are derived.     

Analysis on surface charging of insulator prior to flashover in vacuum

Prior to the flashover across an insulator in vacuum, the insulator surface is usually charged. It is of great importance to investigate the charging phenomena for better understanding the flashover characteristics. It is considered that there are two kinds of mechanisms closely related to the surface charging of insulator i.e., the secondary electron emission occurred over an insulator, and while employing a perfect electrode contact ahead of electron emission into vacuum, the charge injection and accumulation occurred inside the surface layer of an insulator. Based on the rigorous analysis of the kinetic processes of both primary and secondary electrons, the related surface charges were theoretically deduced. Involving the detrapping of charges trapped and the recombination of charges injected, the charging process due to charge injection and accumulation was analyzed. Some formulas were given to express the density of surface charges.     

Image potential for a medium with wavevector and frequency dependent dielectric function

The equation for the quasistatic image potential induced by a charge is derived for a semiinfinite medium with wavevector and frequency dependent dielectric function. The equation is solved exactly for a dielectric function which is local in the direction perpendicular to the surface. This result is applied to the case of a metal, semiconductor and insulator; the Schottky effect is discussed.     

电荷转移型Hubbard模型的相图

用玻色化技术和高斯波泛函变分理论研究了电荷转移型Hubbard模型.通过自旋密度波和电荷密度波的位相结构的变化，并结合其相应能隙的变化，得到以下结论：系统的Ising相变与Mott相变不重合，中间有一个SDI(spontaneouslydimerizedinsulating)的过渡相.在BI(band-insulator)相，自旋密度波与电荷密度波都具有能隙，而在MI(Mott-insulator)相，电荷密度波具有能隙，自旋密度波没有能隙. 关键词： Hubbard模型 电荷密度波 自旋密度波 相图     

Determination of the surface potential of a dielectric layer on a target bombarded by an ion beam

The electric field at the surface of a charge spot created by an ion beam on a dielectric coating of a target is calculated. An expression is obtained which relates the surface potential of the insulator to the potential of the collector corresponding to saturation of the collector secondary-electron current. It permits determination of the potential drop across the oxide layer of a cold cathode without introducing complications in the construction of the experimental apparatus. Zh. Tekh. Fiz. 68, 126–128 (September 1998)     

Surface charge carrier motion on insulating surfaces: One dimensional motion

We consider a model for the motion of charge carriers on the surface of an insulator. The insulator surface is either infinite, semi–infinite against a conducting half space or a strip between two conducting half spaces. The charge flux on the surface is assumed equal to the charge density times the electric field component in the surface, with time a constant. When the charge carrier motion in the plane is assumed constant in one direction, we can write the problem as an inviscid Burgers equation for a complex function. The imaginary part of this function is minus the carrier density while the real part, the Hilbert transform of the carrier density, is minus the electric field on the surface. Using the method of characteristics, we find an exact implicit solution for the problem and illustrate it with several examples. One set of examples, on the real line, or half of it, show how charge moves and how the surface may discharge into a conducting wall. They also show that the system can sustain shock wave solutions which are different from those in a real Burgers equation and other singular behaviour. Exact solutions on a finite strip between two conducting walls also show how that system can discharge completely, and also demonstrate shock waves. These systems are of particular interest because they are experimentally accessible.     

Investigation of layers’ properties using brush discharge: Mobility of charge carriers in the layer is zero

This work is mainly based on the paper “R. Rinkunas, S. Kuskevicius, A contactless method of resistance measurement, Tech. Phys., 59 (2009) 133–137”. This paper contains a proposed contact less method for measuring resistivity of various materials, as well as various ambient parameters related to resistivity, e.g., humidity, intensity of illumination, sample thickness, etc. The mentioned paper describes experimental applications of the proposed method for measuring resistances in the range from 10⁷ Ω to 10¹³ Ω.In this work, a model of the method proposed previously is presented. On the basis of that model, it has been determined that during charging of an insulating layer of a material (on whose surface the deposited ions are immobile), the charge flux becomes wider as it approaches the surface of the insulator. For example, the diameter of the charge flow region may increase from 0.2 mm (near the needle tip) up to 2 cm near the surface of the insulator. [Those numbers correspond to the distance h = 1 mm between the needle and the substrate, insulating layer thickness 40 μm and needle–substrate voltage of 4000 V. A change of those parameters would cause a change of the size of the spot on the layer surface].It has been determined experimentally that resistance of the air gap between the needle and the substrate is linearly dependent only on h, whereas the electromotive force, which is responsible for the electric current from the needle to the substrate, also depends only on h.The radial coordinate of the points where the gradient of the electric charge density is largest is equal to h/2 (a zero radial coordinate corresponds to the point that is directly below the needle).During transfer of charge carriers from the needle onto the surface of the insulating layer, the largest potential is obtained at the point corresponding to radial coordinate r = 0, but this potential is still smaller than the electromotive force that causes electric current in the circuit (i.e., the difference between the power supply voltage and the voltage on the capacitor formed by the needle and the substrate, when no charge has been deposited yet).The time dependence of charging current and of the potential difference between the needle and the substrate is not monotonic: at first the current increases, then it begins to decrease, and the potential difference at first decreases, then it begins to increase. The initial parts of those dependences can be explained by the “breakdown” of the capacitor formed by the needle and the substrate, and the subsequent time dependence is determined by the increase of the insulating layer potential due to accumulation of charge on it.     

电子辐照聚合物带电特性多参数共同作用的数值模拟

电子辐照聚合物样品的带电特性是扫描电子显微镜成像、电子束探针微分析以及空间器件辐照效应等领域的一个重要研究课题. 通过建立基于蒙特卡罗方法的电子散射和时域有限差分法的电子输运的数值模型, 并采用高效的多线程并行计算, 模拟了电子非透射辐照聚合物样品的带电特性, 得到了带电稳态下的样品底部泄漏电流密度、表面负电位以及样品总电荷密度等带电特征量受入射电子能量、入射电流密度、样品材料的电子迁移率、样品厚度等相关参数共同作用的影响. 结果表明, 一个参数的变化使表面负电位增强时, 其他参数对负电位的影响将增强. 样品的带电稳态特征量在同一个电流平衡的模式下受参数影响的变化是单调的. 当电流平衡模式发生变化时, 如在入射电子能量较低的条件下, 样品内部的总电荷量会随着样品厚度的增大而先增加后减小, 出现局部极大值. 样品底部的泄漏电流密度随着入射电流密度的增大而近线性成比例地增大. 研究结果对于揭示电子辐照聚合物的带电规律及微观机理、预测不同条件下的样品带电状态具有重要科学意义.     

风沙流对高压绝缘子电位和电场分布的影响

研究风沙流对高压绝缘子电位和电场分布的影响,基于有限体积法建立绝缘子风沙气固两相流模型和风沙天气下绝缘子的风-沙-电耦合场模型,计算不同风沙天气下绝缘子表面沙尘的空间分布和沉积及其对绝缘子沿面电位和电场的影响,结果表明：风沙天气下绝缘子沿面电位和电场畸变受风速和粒径影响显著,电位的畸变幅度随风速和粒径的增加而升高,电场的畸变幅度随风速和粒径的增大而减少;风沙天气下绝缘子表面不同的沙尘空间分布和沉积导致绝缘子不同位置沿面电位和电场畸变不同.     

Low-energy electron beam on an insulator surface: Impact of the charging process on the diffraction by mica muscovite

The expected low-energy electron diffraction by an insulator is deduced from the consequence of the surface charge distribution on the diffraction process. If the yield of secondary electron emission is greater than unity, the surface reaches electrostatic equilibrium and charges positively. Then incident electrons are simply accelerated and their wavelength is shortened, so the diffraction condition is modified. We show that this modification is strictly compensated by the deviation of the diffracted backward electron crossing the charged surface. The diffraction pattern displays the same geometry, size and symmetry but the diffracted intensity is modified. Through this process the low energy electron diffraction is shown to be an efficient tool to investigate the charging process induced on insulator surfaces by an electron beam. This is exemplified with the surface of mica muscovite, where we relate the oscillation of the surface charge to the evolution of the intensity of the diffraction spots.     

环氧树脂基真空绝缘材料的制备和性能测试

 介绍了一种用于脉冲功率装置真空绝缘子的环氧树脂基复合材料的研制机理、制备过程和典型性能。初步测试结果表明,添加一定量的水合氧化铝颗粒可以使环氧树脂材料的表面电阻率由5×10¹⁶ Ω降低为6×10¹¹ Ω,这一特性有利于释放由于沿面闪络等原因沉积在真空绝缘子表面的电荷,从而使材料在脉冲电压下的沿面闪络电压有所提高,实验得到在上升沿400 ns的脉冲电压作用下, 沿面闪络电压可从17 kV 提高到 28 kV。     

Efficient compact model for calculating the surface potential of carbon-nanotube field-effect transistors using a curve-fitting method

This paper presents an analytical method to compute the surface potential of ballistic metal-oxide semiconductor field-effect transistor (MOSFET)-like carbon-nanotube field-effect transistors (CNFETs). The proposed compact model considers the surface potential as functions of the carbon-nanotube diameter, gate insulator thickness, gate voltage and drain voltage. One of the advantages of this model is that there is no need to refer to the numerical model to recalculate the surface potential each time nanotube diameter or insulator thickness is changed. Instead of using a constant smoothing parameter regardless of the device size and applied bias voltages, a parameter calculated for the specific situations is employed to provide the simulation results with higher accuracy. The validity of the proposed model was verified by comparing the simulated output characteristics of three CNFETs with those of the numerical model and the previous compact model.