Synthesis and characterization of the Aurivillius phases Bi2 − xPbxSr1 − xNdxNb2O9

The n = 2 Aurivillius phase Bi_{2 − x}Pb_xSr_{1 − x}Nd₂O₉ was successfully synthesized as a ceramic material over the whole range of simultaneous, charge compensated substitution x = 0–1.0. Structural investigations were performed by Rietveld refinement applying different space groups Fmmm and A2₁am, and additionally by X-ray absorption spectroscopy (EXAFS) on the Nd L_III-edge, confirming the accommodation of Nd on the atomic sites of Sr, which implies the substitution of Bi³⁺ by the isoelectronic Pb²⁺. The ferroelectric transition temperature T_c = 270 °C of the substituted powders with x = 0.4 and 1.0 is distinctly reduced compared to the unsubstituted sample with T_c = 450 °C. In temperature resolved powder X-ray diffraction patterns no structural phase transition could be detected.     

Nax/2Bi1−x/2MoxV1−xO4 and Bi1−x/3MoxV1−xO4 New Scheelite-related phases

New Scheelite-related solid solutions of the compositions Na_x/2Bi_1−x/2Mo_xV_1−xO₄ (0≤x≤1) and Bi_1−x/3 Mo_xV_1−xO₄(0≤x≤0.2) have been synthesised by the substitution of Na and Mo at the A and B sites respectively of the ABO₄ type ferroelastic BiVO₄. The phases were characterised using chemical analysis, powder X-ray diffraction, scanning electron microscopy, EDAX, and Raman spectroscopy. While almost a continuous solid solution is obtained for the series Na_x/2Bi_1−x/2Mo_xV_1−xO₄, the absence of Na at the A-site results only in a narrow stability region for the other series, Bi_1−x/3 Mo_xV_1−xO₄ where 0≤x≤0.2. Raman spectra of selected samples at room temperature also suggest that vanadium and molybdenum atoms are disordered at the tetrahedral sites.     

Magnetic properties of PuNi3 type intermetallic compounds YxZr1−xCo2.9 and their hydrides

Magnetization and Curie temperature of Y_xZr_1−xCo_2.9 decrease with decreasing x. Their hydrides with x0.8 are paramagnetic with an anomaly and those of 0.7x0.5 become weak ferromagnets. The spin structure is discussed.     

Structure and magnetostriction of RFex (1.6 x 2.0) and R(Fe1−yTiy)1.8 (y 0.2) alloys (R=Dy0.65Tb0.25Pr0.1)

Structure, Curie temperature and magnetostriction of RFe_x (1.6 x 2.0) and R(Fe_1−yTi_y)_1.8 (y 0.2) alloys (R=Dy_0.65Tb_0.25Pr_0.1) have been investigated using optical microscopy, X-ray diffraction, AC initial susceptibility and standard strain gauge techniques. The homogenized RFe_x alloys are found to be essentially single phase in the range of 1.8 x 1.85. The second phase is a rare-earth-rich phase when x 1.8, and (Dy, Tb, Pr)Fe₃ phase when x 1.85. X-ray diffraction indicates that the R(Fe_1−yTi_y)_1.8 alloys contain a small amount of Fe₂Ti phase when y 0.05, which increases with the increment of Ti content. The Curie temperature of R(Fe₁−_yTi_y)_1.8 alloys slightly enhances with increasing Ti concentration when y 0.05, then remains almost unchanged in the range of 0.05 y 0.20. The magnetostriction of RFe_x alloys is improved when x 1.80 and reduced by increasing Fe content when x 1.85. The magnetostriction of R(Fe_1−yTi_y)_1.8 alloys is lowered by increasing Ti content.     

Preparation and electrical properties of a pyrochlore-related Ce2Zr2O8−x phase

A pyrochlore-related Ce₂Zr₂O_8−x phase has been prepared in a reduction reoxidation process from Ce_0.5Zr_0.5O₂ powders. Ce₂Zr₂O_8−x, based on a cubic symmetry with a=1.053 nm, decomposes in nitrogen at 800 °C, but remains stable up to 900 °C in air. It shows mixed oxygen ionic and electronic conductivity. The bulk conductivity at 700 °C is 4×10⁻⁴ S cm⁻¹ in air and 1×10⁻² S cm⁻¹ in nitrogen, and the activation energy is 1.27 eV in air. In nitrogen, the Arrhenius law is not obeyed, and a curved plot was obtained from 400 to 700 °C; then, the conductivity decreased rapidly due to the thermal decomposition of Ce₂Zr₂O_8−x.     

Phonon Raman scattering in Nd1+xBa2−xCu3O7−δ and Pr1+xBa2−xCu3O7−δ single crystals

The polarized Raman spectra of Nd_1+xBa_2−xCu₃O_7−δ (−0.023≤x≤0.107) and Pr_1+xBa_2−xCu₃O_7−δ (0.01≤x≤0.15) single crystals have been investigated. It was found that the Cu(2) A_g mode softens by 6 cm⁻¹ in Nd 1:2:3 and 4 cm⁻¹ in Pr 1:2:3 as x increases. These frequency shifts cannot be explained by the change in the relevant bond lengths due to Nd(Pr)-substitution for Ba. The variations with x of the two low frequency modes may be affected by change of their hybridization and/or change of their force constants. The linewidths of Ba mode in Pr 1:2:3 are broader than those in Y 1:2:3. This result suggests that the Pr substitution on Ba sites occurred even in a very small value of x. In x(yy) geometry the relative intensity of the Ba and O(4) modes in Nd 1:2:3 is greater than those in Pr 1:2:3. The difference between Nd 1:2:3 and Pr 1:2:3 in the relative intensity of the Ba and O(4) modes may be produced by the chains.     

Magnetic properties of the pyrite type FexCo1−x−yNiyS2 system

The magnetic phase diagram of the Fe_xCo_1−x−yNi_yS₂ system was determined. Ferromagnetic (F)-, antiferromagnetic (AF )- and paramagnetic (P) phases were found. In the triangular diagram, the F-phase appears along the CoS₂-FeS₂ line, the AF-phase around NiS₂ and the P-phase between the F- and AF-phases. Discussions are given on the F-phase.     

NMR study of coexistence of ferro- and antiferromagnetism in (Zr1−xNbx)Fe2

The magnetic phase diagram has been investigated in the C14 type (Zr_1−xNb_x)Fe₂ with x0.7 from ⁹³Nb NMR and magnetization measurements. In the compound with x = 0.825 a first order-like transition has been found to occur around 25 K from a canted state with the ferromagnetic moment in the basal plane to a ferromagnetic state with decreasing temperature.     

Structural characteristics and morphology of SmxCe1−xO2−x/2 thin films

Effect of the deposition temperature (200 and 500 °C) and composition of Sm_xCe_1−xO_2−x/2 (x = 0, 10.9–15.9 mol%) thin films prepared by electron beam physical vapor deposition (EB-PVD) and Ar⁺ ion beam assisted deposition (IBAD) combined with EB-PVD on structural characteristics and morphology/microstructure was investigated. The X-ray photoelectron spectroscopy (XPS) of the surface and electron probe microanalysis (EPMA) of the bulk of the film revealed the dominant occurrence of Ce⁴⁺ oxidation state, suggesting the presence of CeO₂ phase, which was confirmed by X-ray diffraction (XRD). The Ce³⁺ oxidation states corresponding to Ce₂O₃ phase were in minority. The XRD and scanning electron microscopy (SEM) showed the polycrystalline columnar structure and a rooftop morphology of the surface. Effects of the preparation conditions (temperature, composition, IBAD) on the lattice parameter, grain size, perfection of the columnar growth and its impact on the surface morphology are analyzed and discussed.     

Growth and properties of ferromagnetic In1−xMnxSb alloys

We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In_1−xMn_xSb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In_1−xMn_xSb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.     

Magnetic properties of pseudobinary compounds CrSb1−xAsx

Magnetic susceptibility and crystal structure were studied on CrSb_1−xAs_0.6, structural transformation occurs between MnP-type and NiAs-type at 270 K, the Néel temperature is 300 K. Paramagnetic moments of the system are 2.45−2.7μ_B/Cr, considerably larger than antiferromagnetic moments.     

Electrical properties of perovskite-type La(Cr1−xMnx)O3+δ

Perovskite-type La(Cr_1−xMn_x)O_3+δ (0.0x1.0) was synthesized using a sol–gel process. The crystal structure of La(Cr_1−xMn_x)O_3+δ changes from orthorhombic to rhombohedral at x=0.6. The Mn⁴⁺ ion content increases monotonically in the range 0.2x1.0. The magnetic measurement of La(Cr_1−xMn_x)O_3+δ indicates that a Mn³⁺ ion is a high-spin state with (d)³(dγ)¹. The variation of the average (Cr, Mn)-O distance is explained by ionic radii of the Cr³⁺, the Mn³⁺, the Mn⁴⁺ ions. Since the log σT–1/T curve is linear and the Seebeck coefficient (α) is independent of temperature, it is considered that La(Cr_1−xMn_x)O_3+δ is a p-type semiconductor and exhibits the hopping conductivity.     

Structural and compositional analysis of InBixAsySb(1−x−y) films grown on GaAs(0 0 1) substrates by liquid phase epitaxy

The growth of epitaxial InBi_xAs_ySb_(1−x−y) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Orientation and single crystalline nature of the film have been confirmed by X-ray diffraction. Scanning electron micrograph shows abrupt interface at micrometer resolution. Surface composition of Bi(x) and As(y) in the InBi_xAs_ySb_(1−x−y) film was measured using energy dispersive X-ray analysis and found to be 2.5 and 10.5 at.%, respectively, and was further confirmed with X-ray photoelectron spectroscopy. Variation of the composition with depth of the film was studied by removing the layers with low current (20 μA) Ar⁺ etching. It was observed that with successive Ar⁺ etching, In/Sb ratio remained the same, while the As/Sb and Bi/Sb ratios changed slightly with etching time. However after about 5 min etching the As/Sb and Bi/Sb ratios reached constant values. The room temperature band gap of InBi_0.025As_0.105Sb_0.870 was found to be in the range of 0.113–0.120 eV. The measured values of mobility and carrier density at room temperature are 3.1×10⁴ cm² V⁻¹ s⁻¹ and 8.07×10¹⁶ cm⁻³, respectively.     

Ramans study of Y1−xPrxBa2Cu3O7−δ and YB2Cu3−xZnxO7−δ single crystals

Single crystals with known T_c values of Y_1−xPr_xBa₂Cu₃O_7−δ (Y---Pr1:2:3) and YBa₂Cu_3−xZn_3−xZn_xO_7−δ (Y---Zn1:2:3) systems are studied by Raman measurements. The Raman spectra for (Y---Pr1:2:3) single crystals show that the frequencies of Ba and O_z modes increase as the Pr content increases. The results are consistent with the hole-localization scheme proposed for the suppression of superconductivity in the polycrystalline Y---Pr1:2:3 systems. On the other hand, in the Y---Zn1:2:3 system, all the Raman modes do not change in frequencies. However, the FWHM of the Cu(2) mode increases with the decrease of T_c, indicating strong scattering of charge carriers by the substituted Zn ions in the CuO₂ planes. The induced disorder in the CuO₂ planes may be related with suppression of T_c in the Y---Zn1:2:3 system. Thus, the suppression mechanism in the Y---Zn1:2:3 systems seems to be different from that in the Y---Pr1:2:3 systems.     

Structural and vibrational properties of dilute GaNxAs1−x(P1−x)

We report a comprehensive analyzes of the Fourier transform infrared (FTIR) absorption and Raman scattering data on the structural and vibrational properties of dilute ternary GaAs_1−xN_x,[GaP_1−xN_x] (x<0.03) alloys grown on GaAs [GaP] by metal organic chemical vapor deposition (MOCVD) and solid source molecular beam epitaxy (MBE). By using realistic total energy and lattice dynamical calculations, the origin of experimentally observed N-induced vibrational features are characterized. Useful information is obtained about the structural stability, vibrational frequencies, lattice relaxations and compositional disorder in GaNAs (GaNP) alloys. At lower composition (x<0.015) most of the N atoms occupy the As [P] sublattice {N_As[N_P]}—they prefer moving out of their substitutional sites to more energetically favorable locations at higher x. Our results for the N-isotopic shifts of local mode frequencies compare favorably well with the existing FTIR data.     

Magnetic behavior of Pr1 − xMxCo5 compounds (M = Ti, Zr and Hf)

Magnetic characteristics of Ti-, Zr- and Hf-substituted PrCo₅ alloys have been studied over the temperature range from 77 to 300 K and for applied fields up to 20 kOe. It is established that Ti, Zr and Hf substitute for Pr. Single-phase materials are formed for all values of x up to 0.2 in the system Pr_1−xZr_xCo₅ but for x only up to 0.1 for Pr_1−xTi_x Co₅ and Pr_1−xHfxCo₅ alloys. Larger amounts of Zr can be substituted if the material is made hyperstoichiometric in Co, e.g., Pr_0.7Zr_0.3Co_5.5. All the alloys show a decrease in magnetic moment and an increase in Curie temperature as x increases. Anisotropy fields decrease as x increases at 295 K. Anomalous behavior is observed at 77 K, suggested that these ternary alloys may have a cone structure at this temperature.     

Quantum critical point, scaling and universality in high Tc(CaxLa1−x)(Ba2−c−xLac+x)Cu3Oy

Using charge transport in sintered ceramic samples it is observed that at all doping, including non superconducting overdoped samples, there exists a temperature in which below it dR/dT < 0. This suggests that either the quantum critical point is not necessarily inside the superconducting dome or that the CuO₂ plane is never overdoped. Data relating experimental Cooper pair density, conductivity and T_c suggest that Homes’ relation might need a more specific definition of the conductivity σ.     

The order of magnetic phase transition in La(Fe1−xCox)11.4Si1.6 compounds

Magnetic transitions in La(Fe_1−xCo_x)_11.4Si_1.6 compounds with x=0–0.08, have been studied by DC magnetic measurements and Mössbauer spectroscopy. The temperature dependence of the Landau coefficients has been derived by fitting the magnetization, M(μ₀H), using the Landau expansion of the magnetic free energy. For x0.02 there is a strongly first-order magnetic phase transition between ferromagnetic and paramagnetic (F–P) states in zero external field and a metamagnetic transition from paramagnetic to ferromagnetic (P–F) above T_c. Increasing the cobalt content drives the F–P transition towards second order and eliminates the metamagnetic transition.     

Trapping mechanism of superconductivity suppression induced by Pr substitution in the Ho1−xPrxBa2Cu3O7−δ system

Pr concentration dependence of the superconducting transition temperature T_c in the Ho_1−xPr_xBa₂Cu₃O_7−δ system is determined from measurements of DC electrical resistance. This dependence coincides with that for the parallely studied Y_1−xPr_xBa₂Cu₃O_7−δ reference system. Both systems have the same value of the critical concentration x_c=0.58, in accordance with nearly equal ionic radii of Ho³⁺ and Y³⁺ ions. It has been shown that the T_c(x) curve can be described with a single mechanism based on a decreasing number of sheet holes trapped by Pr^IV-ions, if one takes also into account that the number of these ions changes with x.