Structure and Electron Transport at Metal Atomic Junctions Doped with Dichloroethylene

We have investigated the structure and electron transport at dichloroethylene-doped metal atomic junctions at low temperatures (20 K) in ultra-high vacuum, using Fe, Ni, Pd, Cu, Ag, and Au. The metal atomic junctions were fabricated using the mechanically controllable break junction technique. After introducing the dichloroethylene (DCE), the conductance behavior of Fe, Ni, and Pd junctions was considerably changed, whereas little change was observed for Cu, Ag, and Au. For the Pd and Cu junctions, a clear peak was observed in their conductance histograms, showing that the single-molecule junction was selectively formed. To investigate the structure of the metal atomic junctions further, their plateau lengths were analyzed. The length analysis revealed that the Au atomic wire was elongated, and the metal atomic wires were formed for the other transition metals: those that do not normally form metal atomic wires without DCE doping, as DCE adsorption stabilized the metal atomic states. There is a strong interaction between DCE and the metals, where DCE supports the formation of the metal atomic wire for Fe, Ni, and Pd.     

金属/分子/金属结的电子输运机理与表征

金属/分子/金属结是分子电子学中的基本单元.根据电子的相位是否发生改变,分子结中的电子输运可以分为相干输运和非相干输运两类.在实验上,分子结的表征方法可以分为电学性质表征和非电学性质表征两类.本文借助能级图,首先对分子结的电子输运机理作了简明解释.在此基础上,结合文献报道和本课题组此前的工作,对分子结的一些常用电学表征方法,包括电流-电压特性曲线、电流-时间曲线、电导统计柱状图、转变电压谱、散粒噪声测试、非弹性电子隧道谱和热电效应法进行了介绍.     

Electron Transport and Redox Reactions in Molecular Electronic Junctions

Electron transport through single molecules or collections of molecules oriented in parallel can occur by several mechanisms, including coherent tunneling, activated transfer between potential wells, various “hopping” modes, etc. Given suitable energy levels and sufficiently long charge transport times, reduction or oxidation with accompanying nuclear reorganization can occur to generate “polarons”, that is, localized redox centers in the molecule or monolayer. Redox events in molecular junctions are amenable to spectroscopic monitoring in working devices, and can have major effects on the electronic behavior of the junction. Several examples are presented, along with a possible application to molecular memory.     

Increased Surface Density of States at the Fermi Level for Electron Transport Across Single-Molecule Junctions

Fermi's golden rule, a remarkable concept for the transition probability involving continuous states, is applicable to the interfacial electron-transporting efficiency via correlation with the surface density of states (SDOS). Yet, this concept has not been reported to tailor single-molecule junctions where gold is an overwhelmingly popular electrode material due to its superior amenability in regenerating molecular junctions. At the Fermi level, however, the SDOS of gold is small due to its fully filled d-shell. To increase the electron-transport efficiency, herein, gold electrodes are modified by a monolayer of platinum or palladium that bears partially filled d-shells and exhibits significant SDOS at the Fermi energy. An increase by 2–30 fold is found for single-molecule conductance of α,ω-hexanes bridged via common headgroups. The improved junction conductance is attributed to the electrode self-energy which involves a stronger coupling with the molecule and a larger SDOS participated by d-electrons at the electrode-molecule interfaces.     

Geometric Effects on Conductance in Single Molecule Electron Transport Junctions

We studied electron transport properties of a dithiol‐benzene molecule covalently bonded between two gold electrodes by combining ab initio calculations for the central molecule and a green function method to calculate electron transport. Due to the large computational demand, this type of calculations usually involves certain ways of simplification. The simplification commonly used is to fix the contact surface of the electrodes by ignoring the disturbance of the Au contact surface by contacting with the central molecule, i.e. without scattering region relaxation. In this study, we intended to resolve the difference between models with and without the above simplification. The large conductance found in our models without scattering region relaxation is due to the highly symmetric arrangement of the Au contact surface and those layers near the contact. The disturbance of the Au contact surface by the contact of the central molecule is important since the increase of the Au‐S bond and the distortion of the Au atom on the FCC site can lower the transmission coefficient between the two electrodes. In order to obtain better results, the model should include scattering region relaxation. However, when such relaxation is not applicable or demands too much calculation resource, the center molecule of the electronic transport junction should be at least optimized by the calculation level including electronic correlation, i.e. post‐HF methods.     

过渡金属掺杂SnO_2的电子结构与磁性

采用密度泛函理论及赝势平面波方法,对未掺杂SnO_2以及过渡金属V、Cr、Mn掺杂SnO_2的超原胞体系进行了几何优化,计算了晶格常数、电子结构与磁学性质.结果表明,6.25%与12.5%两种掺杂浓度时,体系的电子自旋和磁学性质没有发生很大的变化;相对于未掺杂SnO_2,过渡金属掺杂后SnO_2中O原子有向过渡金属移动的趋势,并使得O与掺杂金属之间键长变短;在V和Cr掺杂后,SnO_2具有半金属性质,而Mn掺杂SnO_2没有发现上述性质.6.25%与12.5%的杂质浓度对自旋和磁矩影响不大,掺杂产生的磁矩主要来自于过渡金属3d电子态,且磁矩的大小与过渡金属的电子排布有关.V、Cr、Mn掺杂SnO_2后的总磁矩分别为0.94μ_B、2.0μ_B、3.00μ_B.磁矩主要来源于过渡金属3d轨道的自旋极化,当O原子出现负磁矩的时候,还有很小一部分磁矩来源于临近过渡金属的Sn原子.     

噻吩环取代掺杂一维共轭碳基材料的电子输运

一维共轭碳基材料以苯环为基本单元,具有优越的导电性,分子光电器件的发展要求其在高导电性的前提下兼具富电子或少电子特征.本工作设计了噻吩环取代掺杂一维共轭碳基材料的寡聚苯并[1,2-b：4,5-b']二噻吩（BmT）和寡聚噻吩（TnP）分子模型,利用密度泛函理论结合非平衡格林函数方法研究了掺杂位置和掺杂程度对其输运行为的影响.噻吩环在一维共轭碳基材料上的取代掺杂有效提升了材料的电子输运效率.BmT和TnP分子的导电特性随分子长度的变化表明分子的共轭程度决定了电子输运效率.反式BmT和TnP分子具有多条电子传输路径,而顺式BmT和TnP分子随着分子长度增加,经历了由单条电子传输路径至多条电子传输路径的转变.该研究结果为开发高性能碳基分子电子材料提供了重要参考.     

Thin Film of Perovskite Oxide with Atomic Scale p-n Junctions

Thin films of perovskite manganese oxide La_0.66Ca_0.29K_0.05MnO₃(LCKMO) on Au/ITO(ITO=indium tin oxide) substrates were prepared by off-axis radio frequency magnetron sputtering and characterized by X-ray diffraction( XRD), high-resolution transmission electron microscopy(HRTEM), and conductive atomic force microscopy (C-AFM) at room temperature. The thin films with thickness ranged from 100 nm to 300 nm basically show cubic structures with a=0.3886 nm, the same as that of the raw material used, but the structures are highly modulated. C-AFM results revealed that the atomic scale p-n junction feature of the thin films was the same as that of the single crystals. The preparation of the thin films thus further confirms the possibility of their application extending from micrometer-sized single crystals to macroscopic thin film.     

Structure and Spin-Polarized Transport of Co Atomic Chains on Graphene with Topological Line Defects

We carry out density functional theory calculations to explore the nucleation growth of Co atoms absorbed on graphene with extended linear defect (LD@Gr). Based on the analysis of optimized structures, binding energies and diffusion barriers, we predict a patterned growth of linear arranged Co clusters along the LD. With the increase of cluster size, Co chain forms gradually and results in the construction of a quasi-one-dimensional (1D) heterostructure (Co/LD@Gr). Moreover, the transport properties of the Co/LD@Gr are investigated by using the non-equilibrium Green’s function method combined with density functional theory. We find that the spin current paralleling to the LD is polarized. The spin-resolved transmission pathways and eigenchannels indicate that there is high spin injection from Co chain into graphene. As predetermined location and direction for the LD in graphene have been realized experimentally, this quasi-1D Co/LD@Gr heterostructure would be a compelling and feasible candidate for future spintronic related applications.     

3d夹心化合物的电子结构

用EHMO方法研究了3d环戊二烯夹心化合物的电子结构。结果表明环戊二烯配位体和过渡金属的化学键,Cp-M,含有σ、π和δ三种键型。以π给予键为主,σ和δ键主要是金属轨道的贡献。讨论了这三种键型对3d过渡金属环戊二烯夹心化合物稳定性的影响。     

草酸盐的电子结构及其热稳定性

本文以改进了的CNINDO程序,运用其中的EHMO方法计算了二价金属草酸盐的电子结构并讨论了它们的热稳定性与电子结构的关系。     

碱金属修饰g-C3N4的能带结构调控与载流子迁移过程

采用平面波超软赝势方法研究了Li、Na、K三种碱金属离子修饰对g-C₃N₄能带结构和载流子迁移过程的影响。对建立的六种吸附构型分别采用广义梯度近似和局域密度近似进行计算,发现三种碱金属离子均更趋向于吸附在g-C₃N₄片层内的大空洞中央位置（F位置）。对于碱金属与g-C₃N₄形成的n型Schottky结,通过能带结构和功函数的计算,发现界面电荷的平衡使g-C₃N₄的能带电位分别整体下移1.52 V（Li）、1.07 V（Na）、0.86 V（K）。其中K离子的引入一方面将g-C₃N₄的价带和导带调整到更合适的氧化还原电位,另一方面增大了g-C₃N₄的最高占据轨道（HOMO）和最低未占据轨道（LOMO）的分布,有利于提高载流子的迁移率,同时出现的HOMO和LOMO轨道非共面特性有利于电子和空穴的分离。     

过渡金属一取代Keggin结构钼磷酸盐掺杂的聚吡咯的制备、表征与导电性研究

０引言有机高分子－多酸导电聚合物是８０年代末兴起的一类新型有机－无机杂化材料。由于它兼有无机组分和有机聚合物基块的性能，并能衍生出新的导电性、光学性、耐摩擦、力学性能、功能梯度等，它现已成为材料科学和化学科学研究的前沿课题之一犤１犦。多酸是一类含有氧桥的多核配合物，具有强酸性、强氧化性、优良的催化活性、光致变色、电致变色性及高质子导电性等，可作为构建有机－无机杂化材料的基块犤２，３犦。聚吡咯是一类有机高分子，其合成简便、空气稳定性好、易于掺杂，通过掺杂可形成高电导率的高分子材料。若将多酸掺杂聚吡…     

过渡金属掺杂SnO2的电子结构与磁性

采用密度泛函理论及赝势平面波方法, 对未掺杂SnO2以及过渡金属V、Cr、Mn掺杂SnO2的超原胞体系进行了几何优化, 计算了晶格常数、电子结构与磁学性质. 结果表明, 6.25%与12.5%两种掺杂浓度时, 体系的电子自旋和磁学性质没有发生很大的变化; 相对于未掺杂SnO2, 过渡金属掺杂后SnO2中O原子有向过渡金属移动的趋势, 并使得O与掺杂金属之间键长变短; 在V和Cr掺杂后, SnO2具有半金属性质, 而Mn掺杂SnO2没有发现上述性质. 6.25%与12.5%的杂质浓度对自旋和磁矩影响不大, 掺杂产生的磁矩主要来自于过渡金属3d电子态, 且磁矩的大小与过渡金属的电子排布有关. V、Cr、Mn掺杂SnO2后的总磁矩分别为0.94μB、2.02μB、3.00μB. 磁矩主要来源于过渡金属3d轨道的自旋极化, 当O原子出现负磁矩的时候, 还有很小一部分磁矩来源于临近过渡金属的Sn原子.     

掺镧多孔TiO2纳米晶表面电子结构与能量转换机制

采用溶胶-凝胶法制备多孔掺镧纳米晶二氧化钛样品.结合光声与表面光伏技术,研究样品的光声和表面光伏特性.分析认为,掺镧后在表面上富集的La-O-Ti化合物形成的施主态活性中心吸附氧和H2O分子后生成的活性氧和羟基,导致了吸附表面光激发电荷转移跃迁的催化光反应(sensitized photoreaction)机制.实验证实,适当的镧掺杂不仪可以增强样品的表面光伏特性,而且可以有效地抑制非辐射跃迁的发生,提高光量子效率.实验在指认与样晶非辐射退激有关的电荷转移跃迁过程的同时,证实非辐射跃迁过程与样品表面是否生成活性氧和羟基活性中心无关.     

原子构造原理与过渡元素原子的价电子组态

众所周知,元素周期系过渡元素基态原子价电子组态的多样化是已往的原子构造理论无论是从定性还是从定量方面都是迄今难以给出圆满理论解释的原子构造现象之一^[1-11]。本文介绍新近提出的原子构造的对称性原理以及依据这一原理对上述原子构造现象所作的系统理论解释。     

Effect of Asymmetric Anchoring Groups on Electronic Transport in Hybrid Metal/Molecule/Graphene Single Molecule Junctions

A combined experimental and theoretical study on molecular junctions with asymmetry in both the electrode type and in the anchoring group type is presented. A scanning tunnelling microscope is used to create the “asymmetric” Au-S-(CH₂)n-COOH-graphene molecular junctions and determine their conductance. The measurements are combined with electron transport calculations based on density functional theory (DFT) to analyze the electrical conductance and its length attenuation factor from a series of junctions of different molecular length (n). These results show an unexpected trend with a rather high conductance and a smaller attenuation factor for the Au-S-(CH₂)_n-COOH-graphene configuration compared to the equivalent junction with the “symmetrical” COOH contacting using the HOOC-(CH₂)_n-COOH series. Owing to the effect of the graphene electrode, the attenuation factor is also smaller than the one obtained for Au/Au electrodes. These results are interpreted through the relative molecule/electrode couplings and molecular level alignments as determined with DFT calculations. In an asymmetric junction, the electrical current flows through the less resistive conductance channel, similarly to what is observed in the macroscopic regime.     

Work-Function-Induced Interfacial Electron/Ion Transport in Carbon Hosts toward Dendrite-Free Lithium Metal Anodes

Coupled electron/ion transport is a decisive feature of Li plating/stripping, wherein the compatibility of electron/ion transport rates determines the morphology of deposited Li. Local Li⁺ hotspots form due to inhomogeneous interfacial charge transfer and lead to uncontrolled Li deposition, which decreases the Li utilization rate and safety of Li metal anodes. Herein, we report a method to obtain dendrite-free Li metal anodes by driving electron pumping and accumulating and boosting Li ion diffusion by tuning the work function of a carbon host using cobalt-containing catalysts. The results reveal that increasing the work function provides an electron deviation from C to Co, and electron-rich Co shows favorable binding to Li⁺. The Co catalysts boost Li⁺ diffusion on the carbon fiber scaffolds without local aggregation by reducing the Li⁺ migration barrier. The as-obtained dendrite-free Li metal anode exhibits a Coulombic efficiency of 99.0 %, a cycle life of over 2000 h, a Li utilization rate of 50 %, and a capacity retention of 83.4 % after 130 cycles in pouch cells at a negative/positive capacity ratio of 2.5. These findings provide a novel strategy to stabilize Li metal by regulating the work function of materials using electrocatalysts.     

正八面体过渡金属化合物能谱计算的程序设计

本文对正八面体过渡金属化合物的价电子体系实现了(et_2)~*组态能谱计算的程序化,包括Hamilton算子矩阵元的计算以及各种分子多数的分子轨道计算。