小型TEA CO2激光器的复合腔注入锁定技术

提出了一种新的小型ＴＥＡ ＣＯ２激光锁定技术－复合腔注入锁定技术，并介绍了它的原理。从理论上分析了复合腔注入锁定激光器的频率特性。给出了复合腔注入锁定试验研究的初步结果。     

Injection locking semiconductor lasers with phase conjugate feedback

Phase conjugate injection locking is shown to couple coherently two semiconductor lasers through a double phase conjugate mirror geometry. The mutual coherence and stability of the lock band are characterized from the visibility and relative intensity noise measurements for various levels of phase conjugate coupling and frequency detunings. Side mode phase conjugate injection locking is demonstrated by high mutual coherence with visibility 0.93 and detunings up to nine longitudinal mode spacings at injection levels of −22 dB. Central mode phase conjugate injection locking with high mutual coherence is also possible for feedback levels of −36 dB and exhibiting an asymmetric stable locking region of 350 MHz bandwidth within the locking band. The phase locking is unstable though, the reasons for which are discussed. Increased phase conjugate feedback extends the lock band to greater detunings and asymmetry as in direct injection locking with only a small region showing high mutual coherence. Intensity noise measurements are also discussed.     

谱线和耦合系数对光纤激光器相互注入锁定的影响

相互注入锁定是相干合成技术中最具发展前景的方案之一. 在两个光纤激光器相互注入锁定的基础上,利用可调节光纤光栅改变其中一个激光器的中心谱线和利用不同的分束器改变两个激光器间的耦合系数,同时监测两个激光器的远场光斑和谱线,判断激光器谱线和耦合系数对相互注入锁定的影响. 通过理论和实验得到：提高耦合系数可以提高锁定的频率差;两个激光器的谱线越接近锁定的效果越好,当激光器的谱线超过一定范围时,两个激光器将不能被锁定. 关键词： 光纤激光器 相干合成 相位锁定     

基于预群聚的回旋管注入锁相研究

开展了40 kW预群聚注入锁相回旋管的理论与模拟设计。基于全电磁仿真方法完成了预群聚腔的设计,并采用给定场理论对电子束经过预调制腔后的群聚状态进行了计算。采用自洽理论获得了回旋管的自由振荡工作参数,并计算了振荡频率随各种参数变化的规律,由此提出了锁相带宽的要求。采用PIC粒子模拟进行了锁相状态的模拟,得到7 mm漂移距离下锁定增益可达30.5 dB,相应的锁相带宽为20 MHz。如果进一步增长漂移距离或者进一步增大输入功率,锁相带宽还会增大。理论计算和粒子模拟结果表明40 kW级回旋管注入锁相具有良好的可行性。     

用于激光冷却的半导体激光器大频差边模注入锁定的理论及实验研究

利用注入锁定技术实现了与自由运转频率相差1300?GHz的大功率半导体激光器的边模注入 锁定.实验上利用饱和吸收谱和光学外差拍方法详细研究了锁定后主从激光器之间的相干转 移特性,并测量了注入光功率与锁频范围的关系和注入锁定模式建立过程,与利用带注入项 的多模速率方程得到的边模注入锁定的范围相吻合.理论上计算了实现边模注入锁定所满足 的注入光阈值条件,并作了实验验证. 关键词：     

Phase Noise of Optically Generated Microwave Using Sideband Injection Locking

Optically generated 20-GHz microwave carriers with phase noise lower than -75 dBc/Hz at 10 kHz offset and lower than -90 dBc/Hz at 100 kHz offset are obtained using single- and double-sideband injection locking. Within the locking range, the effect of sideband injection locking can be regarded as narrow-band amplification of the modulation sidebands. Increasing the current of slave laser will increase the power of beat signal and reduce the phase noise to a certain extent. Double-sideband injection locking can increase the power of the generated microwave carrier while keeping the phase noise at a low level. It is also revealed that partially destruction of coherence between the two beating lights in the course of sideband injection locking would impair the phase noise performance.     

Bifurcation and locking in an multi-quantum-well laser subjected to external injection

Bifurcation and dynamic stability as well as locking in an external light injection multi-quantum-well (MQW) laser are studied. Different dynamic regimes in locking diagram are analyzed with the injection level and frequency detuning. Bifurcate behavior is numerically simulated via the external injection light intensity, frequency detuning, current, linewidth enhance factor, photon loss rate and carrier loss rate, respectively. And the route to chaos from bifurcation, period-doubling and quasi-period are described by numerical analysis. A perturbation equation of four-dimension model and the bifurcation condition are demonstrated. Dynamic stability of the laser is theoretically and numerically analyzed. The bifurcate expression is theoretically given while the maximum locking frequency domain is given. The variational characteristic of the oscillation frequency in the self-pulse regimes versus the injection and detuning are numerically analyzed to find that the relaxation frequency is reduced with adding the detuning in the smaller detuning or with adding the injection in the smaller injection while the relaxation frequency will be increased with adding the detuning in the larger detuning or with adding the injection in the larger injection. We find also that the chaotic spectra are broadened with adding the detuning or narrowed with adding the injection or the current.     

Mutual injection locking and coherent combining of three individual fiber lasers

Mutual injection locking and coherent combining of three individual erbium-doped fiber lasers are reported. Theoretical model of the three fiber lasers under mutual injection is also analyzed. Under free running state, the far field beam profile is a simple intensity superposition as three incoherent beams. Under mutual injection locking, interference lobes with high contrast ratio are obtained in the far field of three fiber lasers, which shows that the three fiber lasers have good interference characteristic under mutual injection. The experimental results are in good agreement with the theoretical results. According to this method, we can also realize coherent beam combining in more fiber lasers.     

Selective injection locking of a multi-mode semiconductor laser to a multi-frequency reference beam

Injection locking is a well known and commonly used method for coherent light amplification. Usually injection locking is obtained on a single-mode laser injected by a single-frequency seeding beam. In this work we show that selective injection locking of a single-frequency may also be achieved on a multi-mode semiconductor laser injected by a multi-frequency seeding beam, if the slave laser provides sufficient frequency filtering. This selective injection locking condition depends critically on the frequency detuning between the free-running slave emission frequency and each injected frequency component. Stable selective injection locking to a set of three seeding components separated by 1.2 GHz is obtained. This system provides an amplification up to 37 dB of each component. This result suggests that, using distinct slave lasers for each frequency line, a set of mutually coherent high-power radiation modes can be tuned in the GHz frequency domain.     

Theoretical study of harmonic injection locking of millimeter wave harmonic gunn oscillators

Harmonic injection locking behavior of millimeter wave second harmonic Gunn oscillators is studied based on an equivalent circuit model. A large signal model of Gunn device in harmonic mode operation is employed. Injection locking curves of voltage amplitude and phase difference between injected current and harmonic voltage are calculated by means of describing function technique. Stability of the locked harmonic oscillators is also investigated. It is revealed that the harmonic locking bandwidth is much smaller than that of fundamental wave oscillators and is closely related to the susceptance slope parameter of fundamental wave circuit. It is also found that the stable region is smaller than that of fundamental wave oscillators. Some conclusions have been made for the application of harmonic injection locking technique.     

两种调制方式下主从激光器同步性能的理论研究

以单周期信号为例,数值模拟并讨论了注入频率和注入光场波动强度对主从式半导体激光器同步性能的影响。分别通过直接调制和外部调制两种方式获得单周期信号,并采用改进的参数——相似指数评价系统的同步性能。研究结果表明：当注入强度足够大时,系统实现注入锁定同步,外部调制的相似指数大于内部调制;注入强度恒定时,同步品质几乎不受调制指数的影响,而受调制频率的影响;由于内部、外部调制引起主激光器的输出反相,两种调制方式下同步品质随调制频率的变化趋势也相反。     

两种调制方式下主从激光器同步性能的理论研究

 以单周期信号为例,数值模拟并讨论了注入频率和注入光场波动强度对主从式半导体激光器同步性能的影响。分别通过直接调制和外部调制两种方式获得单周期信号,并采用改进的参数——相似指数评价系统的同步性能。研究结果表明：当注入强度足够大时,系统实现注入锁定同步,外部调制的相似指数大于内部调制;注入强度恒定时,同步品质几乎不受调制指数的影响,而受调制频率的影响;由于内部、外部调制引起主激光器的输出反相,两种调制方式下同步品质随调制频率的变化趋势也相反。     

相干光注入半导体激光器锁定过程的稳定性和到达混沌态的各种不稳定现象

本文从半经典理论出发,导出半导体激光器相干光注入锁定过程的基本方程组,讨论了静态解的多支性及其稳定性,稳态调制特性及其稳定性,锁定区内外各种不稳定现象及其在光注入条件下参数平面上的分布,发现锁定区内不稳定区中部存在一混沌区,而在靠近稳定区下边界则存在一自脉动区,混沌区与自脉动区之间是其过渡区;发现到达混沌态可通过自脉动分岔(2^p型和非2^p型)、拍频自调制,以及其混合型等新的路径。 关键词：     

Numerical study of converting beat-note signals of dual-frequency lasers to optical frequency combs by optical injection locking of semiconductor lasers

The optical injection locking of semiconductor lasers to dual-frequency lasers is studied by numerical simulations. The beat-note signals can be effectively transformed to optical frequency combs due to the effective four wave-mixing in the active semiconductor gain medium. The low-noise Gaussian-like pulse can be obtained by locking the relaxation oscillation and compensating the gain asymmetry. The simulations suggest that pulse trains of width below 30 ps and repetition rate in GHz frequency can be generated simply by the optical injection locking of semiconductor lasers. Since the optical injection locking can broaden the spectrum and amplify the optical power simultaneously, it can be a good initial stage for generating optical frequency combs from dual-frequency lasers by multi-stage of spectral broadening in nonlinear waveguides.     

两个半导体激光器交叉注入的理论分析

 提出了一个复杂非线性动力学系统－交叉注入锁定半导体激光系统。针对其中最简单的两激光系统,导出了描述它的方程组,解析求解了它们具有相同自由振荡频率时的定态解。结果表明,在相同耦合条件下,锁定的频率范围比主-从方式扩大了大约一倍。从结果可以看出,即使是这种特殊系统,在锁定后频率也可能会改变。     

两个半导体激光器交叉注入的理论分析

提出了一个复杂非线性动力学系统－交叉注入锁定半导体激光系统。针对其中最简单的两激光系统,导出了描述它的方程组,解析求解了它们具有相同自由振荡频率时的定态解。结果表明,在相同耦合条件下,锁定的频率范围比主-从方式扩大了大约一倍。从结果可以看出,即使是这种特殊系统,在锁定后频率也可能会改变。     

高性能注入锁相光电振荡器

提出一种基于注入锁定和锁相环技术的注入锁相光电振荡器.利用注入锁定来改善光电振荡器的近载频相噪以及杂散抑制度.将光电振荡器的输出信号与外注入源进行鉴相,通过锁相环来提升频率稳定性,并进一步改善光电振荡器的近载频相噪.实验结果表明:注入锁相光电振荡器在电滤波器中心频率为9.5GHz、3dB带宽为20 MHz和光纤环长度为6km的情况下,实现了输出信号频率为9.5GHz的单模振荡;当注入锁定带宽为1.98kHz时,光电振荡器输出信号在1kHz频偏处的相位噪声为-125dBc/Hz,在10kHz频偏处的相位噪声为-147dBc/Hz,杂散抑制度高于80dB,阿伦偏差接近1.37×10~(-11)@1s和1.22×10~(-11)@1000s.     

注入锁定改善大口径稳定腔CuBr激光器的输出特性

报道了在稳定腔中采用注入锁定技术，钭自锁模ＣｕＢｒ激光脉冲成功地进行了注入锁定放大，得到了高平均功率的锁模铜激光脉冲，并且通过这种注入锁定，首次在稳定腔中得到了在２０ｍｍ光斑内空间高度相干的高功率铜激光辐射。     

Ultrafast mode switching based on a micro-ring laser

Injection locking and multi-mode switching characteristics of a semiconductor ring laser with the radius of 10 μm are investigated based on a nonlinear time domain multimode rate-equation model. The stable injection locking regions for different target modes are studied as the function of detuning frequency and injection power ratio. The results show that ultra-wide detuning range of ∼100 GHz wide at 5 dB injection power ratio and ultra-low switching power ratio of −27 dB can be realized for this micro-ring laser device. Optimal detuning value and high injection power lead to the minimal switching time. An ultrafast response time of 10 ps indicates that a 10 μm-radius SRL can be utilized for ultrafast all-optical scenarios and high-speed tunable lasers.     

Electron density dynamics in semiconductor lasers under relatively strong dual optical injection

In an optically injected semiconductor laser, we theoretically investigate the effect of strong double optical injection on the dynamics of electron density within the secondary locking area and the conventional locking region.