半导体物理效应及其应用讲座第四讲光吸收跃迁效应与半导体红外探测器的应用发展

光吸收跃迁效应是半导体光电探测器的基本物理过程.文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展.讨论窄禁带半导体带间光吸收跃迁的理论和实验.文章还介绍了本征光吸收系数的表达式及其在材料表征和确定器件截止波长方面的应用,以及它在解释近年来发现的HgCdTe光电二极管电致负荧光现象方面的应用.     

基态简并和非简并高分子的光吸收和量子晶格涨落

通过一个简单的孤子反孤子对模型来模拟一维有机高分子中的量子晶格涨落,高分子中电子能隙内的光吸收是由孤子反孤子对激发的两个分别来源于导带的最低未占据和价带的最高占据离散能级之间的跃迁所产生的.这样的光吸收没有能隙.结果明显表明,基态非简并将抑制量子晶格涨落,从而减少电子能隙内的光吸收,使得基态非简并高分子的光吸收有一相对明显的吸收边,这与实验是一致的. 关键词：     

半导体纳米晶的光吸收系数与尺寸的关系

利用用效质量近似,考虑有限深势阱,对半导体纳米晶的光吸收增强效应进行了研究,提出了一个基本的模型,在限制区,随着半导体纳米晶尺寸的减小,势阱壁对电子－空穴对的相对运动的限制作用大大地增强了光吸收振子强度,对激子的质心运动的限制作用缓慢地啬了吸收振子强度,而跃迁频率的变化减小了振子强度,这三者的总体贡献导致了光吸收系数的大大增强;在弱限制区,单位体积的光吸收振子强度趋于一个常数,这与著名的巨振子强度     

Ag-BaO薄膜在垂直表面电场作用下的光吸收增强

Ag-BaO薄膜是金属纳米微粒埋藏于半导体介质中的功能复合薄膜,它具有超快的光电时间响应,可以检测超短激光脉冲,在Ag-BaO薄膜表面加入垂直电场,可以提高薄膜的光电发射效率,在垂直表面电场作用下近紫外波段光吸收有较明显增强现象,在波长λ=303nm处15V电压作用下光吸收增强6.5%,30V电压作用下增强18%。这种光吸收增强是由于在电场作用下,薄膜的能带结构发生倾斜,以及在强电场下能级分裂。光吸收涉及被激发电子在倾斜能带间隧穿几率的增加,和被激发电子在这些分裂能级间的跃迁。     

半导体中光的相干传播理论(Ⅰ)

本文是半导体中光的相干传播理论的第一部分。在不考虑电子-电子间的相互作用时,我们得到了相干光作用下描述半导体带间跃迁矩阵元满足的布洛赫方程。半导体的带间跃迁形式上可类比于一个非均匀展宽的二能级系统能级间的跃迁;但是在强光的作用下会有一种特殊的多光子过程发生。 关键词：     

空间群选择定则的计算方法

一、引 言 晶体空间群选择定则是用群论方法研究光与晶体相互作用(例如红外吸收、γ散射等过程)的一个基础工作.在晶体特别是在半导体中,跃迁和散射过程涉及电子和声子、电子和光子以及电子同时和声子及光子的相互作用.例如,在锗、硅等半导体中的光跃迁就包括没有声子参加的直接光跃迁和有声子参加的间接光跃迁.只允许某些跃迁的规则称为选择定则, 由量子力学我们知道,由算符H描述的相互作用引起电子从φm态跃迁到φn态,跃迁几率的大小,由下面的积分决定:当这个积分为0时,跃迁是不允许的;当这个积分不为0时,跃迁是允许的.但这个积分计算起…     

Mn掺杂6H-SiC的第一性原理研究

本文通过密度泛函理论第一性原理平面波超软赝势计算方法计算了Mn掺杂6H-SiC的电子结构与光学性质。计算结果显示掺杂Mn后的6H-SiC为间接带隙p型半导体,且带隙较本征体有所降低,带隙由2.022 eV降为0.602 eV,电子从价带跃迁所需能量减少。掺杂后的Mn的3d能级在能带结构中以杂质能级出现,提高了载流子浓度,导电性增强。光学性质研究中,掺杂Mn后的介电函数虚部在低能处增加,电子激发态数量增多,跃迁概率增大。掺杂后的光吸收谱能量初值也较未掺杂的3.1 eV扩展到0 eV,反射谱发生红移。由于禁带宽度的降低使得光电导率起始范围得到扩展。     

Sn-C60薄膜的紫外吸收光谱和X-射线衍射谱分析

对Sn-C60薄膜进行紫外可见光吸收，X-射线衍射和扫描电镜的测定结果显示，薄膜样品紫外可见光吸收的两个短波段吸收峰比纯C60薄膜的吸收峰显著下降，说明Sn-C60薄膜的电子光吸收跃迁为间接跃迁，能带中有杂质能级的存在；样品的X射线衍射峰则对应于面心立方结构；扫描电镜结果显示薄膜为纳米级颗粒组成。     

单电子晶体管与金属氧化物半导体混合电路构造的一维离散混沌系统研究

基于单电子晶体管与金属氧化物半导体混合结构构造出一种一维离散混沌系统. 研究了单电子晶体管与金属氧化物半导体串联混合结构的电压传输特性,并建立了相应的N型分段线性函数模型. 基于该模型实现了一维离散映射系统,分析了它的一维映射过程、分岔图和Lyapunov指数谱等动力学特性. 最后利用单电子晶体管与金属氧化物半导体混合电路设计出该离散混沌系统的电路结构,仿真验证与理论分析一致. 研究结果表明,利用单电子晶体管与金属氧化物半导体混合结构设计的离散混沌电路不仅结构非常简单,功耗很低, 而且有利于混沌系统的集成和应用.     

第一性原理计算N掺杂对InNbO4电子结构的影响

宽带隙（3.83 eV）半导体光催化材料InNbO4在紫外光作用下具有分解水和降解有机物的性能。最近实验发现了N掺杂InNbO4具有可见光下分解水制氢的活性。为了从理论上解释这一实验现象，本文采用基于密度泛函理论的第一性原理计算了N掺杂对InNbO4的能带结构、态密度和光学性质的影响。分析能带结构可得，N掺杂后在InNbO4的价带（O 2p）上方形成N 2p局域能级，导致电子跃迁所需的能量减小。吸收光谱表明，N掺杂后InNbO4的光吸收边出现了红移，实现了可见光吸收。     

用光声技术研究半导体TiO2,ZnO纳米晶粉的光学特性

应用新型的光声光谱技术,研究了不同种类和不同制备工艺条件的半导体纳米晶粉的光学特性,测量了半导体TiO2、ZnO和掺铝ZnO纳米晶粉的光声光谱,获得了这些半导体纳米晶粉的带隙和光谱吸收系数.研究结果表明,相同种类和相同颗粒形状的半导体纳米晶粉的粒径越小,光学吸收系数越大.半导体纳米晶粉的带隙与相同种类纳米颗粒形状(圆球...     

Interband light absorption by a semiconductor in a pulsing electric field

The light absorption by a semiconductor, placed in a pulsing electric field of arbitrary amplitude and pulse duration is considered. The calculation of the absorption coefficient is carried out on the ground of the effective mass method for direct optical transitions between two simple parabolic bands. The calculated absorption coefficient is valid for photon energies both greater and lesser than the semiconductor forbidden bandwidth.     

GaAs半导体材料中双光子吸收光限幅与偏振方向的关系

理论分析了线偏振光波的偏振方向对ＧａＡｓ半导体双光子吸收的影响，实现了ＧａＡｓ半导体材料中不同偏振方向的双光子吸收限幅，提高了双光子吸收光限幅的性能。     

量子阱在沿其平面方向偏振太赫兹波驱动下子带间光吸收

利用半导体布洛赫方程,讨论了量子阱在沿其平面方向偏振的太赫兹场驱动下的光学吸收谱。研究结果揭示了半导体量子阱在沿平面方向偏振的强太赫兹场驱动下吸收谱的一些新奇效应,如主吸收的太赫兹边带、动态弗兰兹-凯尔迪什效应。太赫兹场的频率及其相位对探测场吸收谱的影响也很显著。     

Final-state-interactions in the infrared absorption of doped semiconductors

We calculate the profile of the infrared inter-valence-band absorption in p-doped non-polar semiconductor as modified by the final-state interaction of electronic excitations with optical phonons. The absorption coefficient vanishes at a light frequency equal to the frequency of the non-polar optical vibrations. The spectrum is asymmetric with respect to the absorption minimum. We show that the type of asymmetry depends on the position of the optical phonon energy relative to the electronic continuum. The results are compared to available data for p-doped Si.     

Structure and optical properties of lead iodide based two-dimensional perovskite compounds containing fluorophenethylamines

Phenethylammonium-based perovskites, which can be regarded as a semiconductor/insulator multiple quantum well consisting of lead halide semiconductor layers sandwiched between phenethylammonium insulator layers were prepared. To investigate the effects of the electronic state and the orientation of organic insulator layers on the optical properties of layered perovskites, fluorine substituted analogues were also prepared. The structure and optical properties were investigated by the XRD, UV–Vis absorption, and fluorescence measurements. The exciton absorption peak was shifted by the substitution of fluorine atoms in organic ammonium compounds. It became clear that the optical properties of two-dimensional perovskite compounds were controlled by the substitution of fluorine atoms.     

Coupling strength,coupling-induced asymmetry and shifts in the absorption spectrum in semiconductor quantum dots

The coupling effects on the optical absorption spectrum of semiconductor quantum dots arestudied by using the standard model with valence and conduction band levels coupled todispersive quantum phonons of infinite modes. By deducing the analytical expression of theoptical absorption coefficient, the relationship between the measurable quantities and theintrinsic properties of the semiconductor quantum dot is established. By this expression,the peak position, the line shape, the linewidth, and the energy shift of the absorptionspectrum of semiconductor quantum dot can be calculated precisely for a wide range ofparameters. The role of coupling strength as a mechanism of absorption line asymmetry isinvestigated, and the calculation results clearly show the coupling-induced asymmetry inthe absorption line. This analytical approach is applied to GaAs quantum dot, and theresults are consistent with those of experiment observations.     

金属微粒-半导体薄膜中小胶粒的光吸收和散射

金属微粒-半导体薄膜具有特殊的电学、光学及光电特性。本文讨论了埋藏于半导体基体中金属小胶粒光吸收和光散射公式。这些胶粉可以是球形,也可以是长球或扁球形。本文以银胶粒-氧化铯半导体为例,讨论了胶粒大小、椭球的偏心率对相对光吸收系数和光散射系数的影响,并给出这些系数随波长改变的曲线。 关键词：     

Photoacoustic spectroscopy analysis of thin semiconductor samples

This paper is an analysis of determination possibility of the optical absorption coefficient spectra of thin semiconductor layers from their normalized photoacoustic amplitude spectra. Influence of multiple reflections of light in thin layers on their photoacoustic and optical absorption coefficient spectra is presented and discussed in detail. Practical formulae for the optical absorption coefficient spectrum as a function of the normalized photoacoustic amplitude spectrum are derived and presented. Next, they were applied for computations of the optical absorption coefficient spectra of thin In₂S₃ thin layers deposited on a glass substrate. This method was experimentally verified with the optical transmission method.     

Pure spin photocurrents in low-dimensional structures

As is well known, the absorption of circularly polarized light in semiconductors results in optical orientation of electron spins and helicity-dependent electric photocurrent, and the absorption of linearly polarized light is accompanied by optical alignment of electron momenta. Here, we show that the absorption of unpolarized light leads to the generation of a pure spin current, although both the average electron spin and electric current vanish. We demonstrate this for direct interband and intersubband as well as indirect intraband (Drude-like) optical transitions in semiconductor quantum wells.