CCD质子辐照损伤效应的三维蒙特卡罗模拟

针对空间质子诱发CCD性能退化问题,开展了CCD质子辐照效应的三维蒙特卡罗模拟研究。采用三维蒙特卡罗软件Geant4模拟计算了不同能量质子在Si和SiO₂中的射程及Bragg峰,分析了不同能量质子在材料中能量沉积的过程,并将模拟结果与相关数据进行对比,模拟误差在5%以内。根据质子与材料相互作用的物理过程,选取了合适的Lindhard分离函数,添加合适的物理过程,模拟计算了不同能量质子在SiO₂中的电离能量损失和Si中的非电离能量损失,并将结果与国外相关数据进行对比。根据CCD的生产工艺参数,建立了单个像元的三维模拟模型,确定了质子辐照损伤的灵敏体积,模拟计算了不同能量质子在像元灵敏体积内的电离能量沉积与非电离能量沉积,分析了CCD不同能量质子的辐照损伤差异产生的机理。结合粒子输运计算结果与CCD质子辐照实验结果,分析了质子辐照诱发CCD辐射敏感参数退化的物理机制。     

Lattice damage in InGaN induced by swift heavy ion irradiation

The microstructural responses of In_0.32Ga_0.68N and In_0.9Ga_0.1N films to 2.25 GeV Xe ion irradiation have been investigated using x-ray diffraction, Raman scattering, ion channeling and transmission electron microscopy. It was found that the In-rich In_0.9Ga_0.1N is more susceptible to irradiation than the Ga-rich In_0.32Ga_0.68N. Xe ion irradiation with a fluence of 7× 10¹¹ ions·cm^-2 leads to little damage in In_0.32Ga_0.68N but an obvious lattice expansion in In_0.9Ga_0.1N. The level of lattice disorder in In_0.9Ga_0.1N increases after irradiation, due to the huge electronic energy deposition of the incident Xe ions. However, no Xe ion tracks were observed to be formed, which is attributed to the very high velocity of 2.25 GeV Xe ions. Point defects and/or small defect clusters are probably the dominant defect type in Xe-irradiated In_0.9Ga_0.1N.     

Monte Carlo simulation of exposure factor

In this paper, we simulate the exposure factor by a simple model of a free-air ionization chamber with the Monte Carlo programme Geant4. Special emphasis is placed on the discussion of the exposure factor related to parameters of the chamber model. The reason for the variation in exposure factor with incident ray energy is also analysed in terms of reaction cross section for different types of reactions. The obtained results indicate that our simulation is accurate in the calculation of the exposure factor and can serve as a reference in designing air ionization chambers.     

Monte Carlo simulation of electron beam air plasma characteristics

A high-energy electron beam generator is used to generate a plasma in atmosphere. Based on a Monte Carlo toolkit named GEANT4, a model including complete physics processes is established to simulate the passage of the electron beam in air. Based on the model, the characteristics of the electron beam air plasma are calculated. The energy distribution of beam electrons (BEs) indicates that high-energy electrons almost reside in the centre region of the beam, but low-energy electrons always live in the fringe area. The energy deposition is calculated in two cases, i.e., with and without secondary electrons (SEs). Analysis indicates that the energy deposition of SEs accounts for a large part of the total energy deposition. The results of the energy spectrum show that the electrons in the inlet layer of the low-pressure chamber (LPC) are monoenergetic, but the energy spectrum of the electrons in the outlet layer is not pure. The SEs are largely generated at the outlet of the LPC. Moreover, both the energy distribution of BEs and the magnitude of the density of SEs are closely related to the pressure of LPC. Thus, a conclusion is drawn that a low magnitude of LPC pressure is helpful for reducing the energy loss in the LPC and also useful for greatly increasing the secondary electron density in dense air.     

水下Co-60源切伦科夫辐射的蒙卡模拟

随着核应用领域的不断拓宽,放射源丢失事故发生的概率也随之增加。机载伽马谱仪可有效搜寻地面放射源,然而对于放射源丢失于水域的情况,由于伽马射线经由水层屏蔽后可探测性降低,故利用放射源在水中产生的切伦科夫辐射对其进行搜寻显得十分重要。采用MCNP与Geant4相结合的方法,以及在Geant4程序中采用接续计算技巧,对Co-60源在水中的切伦科夫光产生以及传输进行了计算,计算表明,切伦科夫光经水中传播后,主要波段在300~600 nm,强度呈由边缘到中心渐强的特征分布,分布范围大致与放射源在水中的深度一致,在水中传输300 m后其光通量约为100 cm^-2,可利用光谱特征和强度分布特征对其进行测量。     

Monte Carlo simulations of jet quenching in heavy ion collisions

Jet quenching is one of the major discoveries of the heavy-ion program at Rhic. While there is a wealth of data from Rhic that will soon be supplemented with measurements at the Lhc, on the theoretical side the situation is less clear. A thorough understanding of jet quenching is, however, beneficial, as it is expected that medium-induced modifications of jets allow one to characterise properties of the QCD matter produced in heavy ion collisions. This talk aims at summarising the main ideas and concepts of the currently available Monte Carlo models for jet quenching.     

Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence

We investigate the impact of heavy ion irradiation on a hypothetical static random access memory (SRAM) device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indispensable effects on multiple-bit upsets (MBUs), and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.     

闪烁光纤在γ射线辐照下部分特性的蒙特卡罗模拟

 闪烁光纤在射线成像方面的应用越来越广泛。为了进一步了解闪烁光纤在射线辐照下的基本特性，基于蒙特卡罗方法，利用计算机模拟分析了γ射线在闪烁光纤中的好事例率与光纤长度及射线能量的关系，能量沉积效率与光纤长度及射线能量的关系。此项工作对于闪烁光纤阵列在射线成像，剂量场测量等方面的研究很有价值。     

Analysis of the relationship between neutron dose and Cerenkov photons under neutron irradiation through Monte Carlo method

To theoretically explore the feasibility of neutron dose characterized by Cerenkov photons, the relationship between Cerenkov photons and neutron dose in a water phantom was quantified using the Monte Carlo toolkit Geant4. Results showed that the ratio of the neutron dose deposited by secondary electrons above Cerenkov threshold energy to the total neutron dose is approximately a constant for monoenergetic neutrons from 0.01 eV to 100 eV. With the initial neutron beam energy from 0.01 eV to 100 eV, the number of Cerenkov photons has a good correlation with the total neutron dose along the central axis of the water phantom. The changes of neutron energy spectrum and mechanism analysis also explored at different depths. And the ratio of total neutron dose to the intensity of Cerenkov photons is independent of neutron energy for neutrons from 0.01 eV to 100 eV. These findings indicate that Cerenkov radiation also has potential in the application of neutron dose measurement in some specific fields.     

Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9% 84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ～ 41 MeV/(mg/cm 2 ), which can be partially explained by the fact that the MBU rate for tilted ions of 30 is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ～ 9.5 MeV/(mg/cm 2 ), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.     

Analysis of the charged particle radiation effect for a CubeSat transiting from Earth to Mars

This paper presents a computational estimation of the total ionizing dose from protons and electrons in the Earth's magnetosphere and interplanetary space for a hypothetical CubeSat transiting from Earth to Mars. An initial hyperbolic escape of the spacecraft from Earth's gravitation is assumed, followed by an elliptical transfer from Earth to Mars under the Sun's gravitation. The rapid traversal of the Earth's radiation belt yields a smaller ionizing dose, whereas high-energy solar protons in the interplanetary space have the greatest effect on the ionizing dose during the transfer between the planets. Variation in the heliocentric distance of the spacecraft is considered in the calculation. Calculation of the shielding distributions with Geant4 and the transport of the ionizing particles across the obtained distributions yields an estimation of the total ionizing dose as a function of position within the spacecraft as well as statistical confidence levels. With a moderate confidence level, this calculation shows that a practical exploration of Mars with a CubeSat is possible in terms of the expected total ionizing dose.     

High-precision Monte Carlo test of the conformai-invariance predictions for two-dimensional mutually avoiding walks

Let _l be the critical exponent associated with the probability thatl independentN-step ordinary random walks, starting at nearby points, are mutually avoiding. Using Monte Carlo methods combined with a maximum-likelihood data analysis, we find that in two dimensions ₂=0.6240±0.0005±0.0011 and ₃=1.4575±0.0030±0.0052, where the first error bar represents systematic error due to corrections to scaling (subjective 95% confidence limits) and the second error bar represents statistical error (classical 95% confidence limits). These results are in good agreement with the conformal-invariance predictions ₂=5/8 and ₃=35/24.     

水下切伦科夫光光斑的蒙特卡罗模拟

分别采用分出截面法和积累因子法计算了水下放射性源透过一次屏蔽体的中子与射线的剂量场分布,并在这些分布条件下,利用Geant4软件射线在穿越二次屏蔽体后继而穿越后续水层,计算出在3 m水层中产生的切伦科夫(Cherenkov)光通量分布和光谱分布。以纯水为传播介质,在考虑Cherenkov光在不同水层中传播所造成的几何衰减和水层吸收等因素后,由计算获得了Cherenkov光光斑大小和强度分布。     

基于蒙特卡洛和器件仿真的单粒子翻转计算方法

文章提出了一种基于蒙特卡洛和器件仿真的存储器单粒子翻转截面获取方法,可以准确计算存储器单粒子效应,并定位单粒子翻转的灵敏区域.基于该方法,计算了国产静态存储器和现场可编程门阵列(FPGA)存储区的单粒子效应的截面数据,仿真结果和重离子单粒子效应试验结果符合较好.仿真计算揭示了器件单粒子翻转敏感程度与器件n,p截止管区域面积相关的物理机理,并获得了不同线性能量转移(LET)值下单粒子翻转灵敏区域分布.采用蒙特卡洛方法计算了具有相同LET、不同能量的离子径迹分布,结果显示高能离子的电离径迹半径远大于低能离子,而低能离子径迹中心的能量密度却要高约两到三个数量级.随着器件特征尺寸的减小,这种差别的影响将会越来越明显,阈值LET和饱和截面将不能完全描述器件单粒子效应结果.     

TEM investigations of heavy ion latent tracks

High resolution observations of GeS single crystals with a 400 keV transmission electron microscope (TEM) were carried out. The GeS was irradiated at the UNICAC with heavy ions at several MeV/u specific energy. The imaging of the tracks revealed relatively large amorphous cores of elliptical cross section, oriented with respect to the crystal lattice.     

Influence of thyroid volume reduction on absorbed dose in 131I therapy studied by using Geant4 Monte Carlo simulation

A simulation study has been performed to quantify the effect of volume reduction on the thyroid absorbed dose per decay and to investigate the variation of energy deposition per decay due to β- and γ-activity of 131I with volume/mass of thyroid, for water, ICRP- and ICRU-soft tissue taken as thyroid material. A Monte Carlo model of the thyroid, in the Geant4 radiation transport simulation toolkit was constructed to compute the β- and γ-absorbed dose in the simulated thyroid phantom for various values of its volume. The effect of the size and shape of the thyroid on energy deposition per decay has also been studied by using spherical, ellipsoidal and cylindrical models for the thyroid and varying its volume in 1-25 cm3 range. The relative differences of Geant4 results for different models with each other and MCNP results lie well below 1.870%. The maximum relative difference among the Geant4 estimated results for water with ICRP and ICRU soft tissues is not more than 0.225%. S-values for ellipsoidal, spherical and cylindrical thyroid models were estimated and the relative difference with published results lies within 3.095%. The absorbed fraction values for beta particles show a good agreement with published values within 2.105% deviation. The Geant4 based simulation results of absorbed fractions for gammas again show a good agreement with the corresponding MCNP and EGS4 results （±6.667%） but have 29.032% higher values than that of MIRD calculated values. Consistent with previous studies, the reduction of the thyroid volume is found to have a substantial effect on the absorbed dose. Geant4 simulations confirm dose dependence on the volume/mass of thyroid in agreement with MCNP and EGS4 computed values but are substantially different from MIRD8 data. Therefore, inclusion of size/mass dependence is indicated for 131I radiotherapy of the thyroid.     

Characteristics of heavy ion tracks in bubble detectors

Characteristics of tracks created by heavy ions in bubble detectors have been studied in detail by using four types of super long (23 cm), self-made bubble detectors and six species of high energy heavy ions: ¹²C, ²⁸Si, ⁴⁰Ar, ⁵⁶Fe, ⁸⁴Kr and ¹³²Xe. The following characteristics of heavy ion tracks in bubble detectors have been recognized:

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100MeV质子双环双散射体扩束方案设计

为满足质子单粒子效应实验对大面积、均匀化质子束流的需求,针对中国原子能科学研究院100 MeV质子回旋加速器提供的100 MeV质子进行了双环双散射体扩束方案设计.Geant4模拟表明该方案可在2.4 m位置产生一个均匀性为±1.89%、半径为8 cm的照射野,在5 m位置产生一个均匀性为±5.32%、半径为20 cm的照射野.此外,利用Geant4对双环双散射体扩束方法的基本原理进行了进一步探索,并对第二散射体后加速器管道、初始束斑尺寸、照射野形成距离、改变入射质子能量等实际中各种可能因素对该方案扩束效果的影响进行了讨论.     

Comprehensive analysis of binary events in heavy ion reactions observed with dielectric track detectors

The dielectric track detectors are very efficient in registering the main fragments of a heavy ion reaction in the presence of lightly ionizing products and γ-radiations because of their threshold nature of registration and wide-angle acceptance. The binary events, revealed after chemical etching of these detectors, appear as the events having two correlated prongs in the body of the detector. The measurements of the geometrical parameters of these prongs provide the necessary data for subsequent kinematical analysis. We have made a thorough analysis of the two-pronged events in order to understand the physical mechanism of their production, using the track data from the reactions,     

Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator (FDSOI) devices with ultra-thin sensitive silicon layers down to 2.5 nm. The absolute straggling of deposited energy decreases with decreasing thickness of the active silicon layer. While the relative straggling increases gradually with decreasing thickness of silicon films and exhibits a sharp rise as the thickness of the silicon film descends below a threshold value of 50 nm, with the dispersion of deposited energy ascending above ±10%. Ion species and energy dependence of the energy-loss straggling are also investigated. For a given beam, the dispersion of deposited energy results in large uncertainty on the actual linear energy transfer (LET) of incident ions, and thus single event effect (SEE) responses, which pose great challenges for traditional error rate prediction methods.