Study of the η'→Ve~+e~- decay with hidden local symmetry model

Within the hidden local symmetry framework, the Dalitz decay η→Ve+e-is studied with the vector meson dominance model. It is found that the partial width Γ(η→ωe+e-)≈40 e V and branching ratio B(η→ωe+e-)≈2×10-4, and Γ(η→ρe+e-)≈10Γ(η→ωe+e-) and B(η→ρe+e-)≈10B(η→ωe+e-). The maximum position of the dilepton distribution is m e+e-≈1.33 Me V. These decays are measurable with the advent of high statistic ηexperiments.     

Coulomb effects in spatially separated electron and hole layers in coupled quantum wells

We report on the (magneto-) optical study of many-body effects in spatially separated electron and hole layers in GaAs/Al_xGa_1?x As coupled quantum wells (CQWs) at low temperatures (T = 1.4 K) for a broad range of electron-hole (e-h) densities. Coulomb effects were found to result in an enhancement of the indirect (interwell) photoluminescence (PL) energy with increasing the e-h density both for a zero magnetic field and at high fields for all Landau level transitions; this is in contrast to the electron-hole systems in single QWs where the main features are explained by the band-gap renormalization resulting in a reduction of the PL energy. The observed enhancement of the ground state energy of the system of the spatially separated electron and hole layers with increasing the e-h density indicates that the real space condensation to droplets is energetically unfavorable. At high densities of separated electrons and holes, a new direct (intrawell) PL line has been observed: its relative intensity increased both in PL and in absorption (measured by indirect PL excitation) with increasing density; its energy separation from the direct exciton line fits well to the X ^? and X ⁺ binding energies previously measured in single QWs. The line is therefore attributed to direct multiparticle complexes.     

Radiative process in strong magnetic fields

Abstract

The behavior of electromagnetic processes in strong magnetic fields is currently of great interest in high-energy astrophysics. Observations of neutron stars indicate that magnetic fields larger than 10¹² Gauss exist in nature. In fields this strong, where electrons behave much as if they were in bound atomic states, familiar processes undergo profound changes and exotic processes become important. Strong magnetic fields affect the physics in several fundamental ways: energies prependicular to the field are quantized, transverse momentum is not conserved and electron/positron spin is important. The relaxation of transverse mometum conservation allows first order processes and their inverses: one-photon pair production and annihilation, synchrotron/cyclotron radiation and absorption, which are kinematically forbidden under field-free conditions. The first two are essentially quantum-mechanical and hence significant only in fields whose strength approaches the critical field, B _cr = 4.414 × 10¹³ Gauss. One-photon pair production is likely to be the dominant source of e ⁺ -e ^? pairs in fields exceeding 10¹² Gauss. While synchrotron radiation and absorption are observable as classical electromagnetic processes in weak fields, they are considerably different in high fields, where the classical synchrotron radiation formulae can violate conservation of energy, and predict too large an emissivity and electron energy loss rate. The second-order processes: two-photon pair production and annihilation and Compton Scattering, are also modified in strong fields. The discreteness of e ⁺ - e^? pair states causes resonant behavior in the cross sections and decreases the second-order rates from their free-space values. These processes play an important role in modelling high energy emission from pulsars and gamma-ray bursts.     

Positron annihilation from excited states of [X-e+] systems

The relative probabilities for the radiative de-excitation 2p₊ → ls₊ versus 2γ-annihilation for the hdot; ns²np⁶2p₊, ²P state of the [X^-e⁺] system with X = F, Cl, Br, and I are presented. It is shown that a positron captured into a 2p₊ orbital undergoes annihilation with electrons of the system instead of radiative transition to the ground state of the [X^-e⁺] system.     

Redistribution of electrons between ellipsoids in a magnetic field in the quantum limit range in n-Bi-Sb alloys

The magnetoresistivities ρ₂₂(H) and ρ₃₂(H) and the Hall coefficient R _32.1 for single-crystal samples of the n-Bi_0.93Sb_0.07 semiconducting alloy have been measured at low temperatures in magnetic fields up to H=14 T at H∥C ₂. The samples with three electron concentrations n ₁=1.25 × 10¹⁶ cm^s-3, n ₂=3.5×10¹⁶ cm^s-3, and n ₃=1.6×10¹⁷ cm^s-3 have been studied. The strong anisotropy of the electron spectrum of the alloys has made it possible to observe quantum oscillations of the magnetoresistivity ρ₂₂ (H) at H∥C ₂ for electrons of the secondary ellipsoids with the transition to the quantum limit in high magnetic fields. However, in the same magnetic fields, the quantization condition for electrons of the main ellipsoid is not satisfied. An increase in the energy of electrons of the secondary ellipsoids in the magnetic fields of the quantum limit leads to their migration to the main ellipsoid. After the complete migration, the Fermi energy for the alloy samples with the electron concentrations n ₁, n ₂, and n ₃ increases from 7.0 to 11.3 meV, from 11.0 to 17.1 meV, and from 20.2 to 30.6 meV, respectively. After the migration, the magnetoresistivity for electrons of the main ellipsoid increases with an increase in the magnetic field and the specific features in the behavior of the kinetic coefficients are observed in the vicinity of the magnetic field H=10 T. Therefore, the electronic topological transition from the three-valley electron spectrum to the single-valley electron spectrum occurs in the Bi_0.93Sb_0.07 single crystals for H∥C ₂ at low temperatures in the range of magnetic fields of the quantum limit.     

The ground state of two-dimensional electrons in a nonuniform magnetic field

An exact solution to the Schrödinger equation for the ground state of two-dimensional Pauli electrons in a nonuniform transverse magnetic field H is presented for two cases. In the first case, the field H depends on a single variable, H = H(y), while in the second case, the field is axially symmetric, H = H(ρ), ρ²=x ²+y ². The electron density distributions n = n(y) and n = n(ρ) that correspond to a completely filled lower level are found. For quasiuniform fields of fixed sign, the functions n(y) and n(ρ) are locally related to the magnetic field: n(y) = H(y)/?₀ and n(ρ) = H(ρ)/?₀, where ?₀ = hc/|e| is a magnetic flux quantum. Magnetic fields are considered that are periodic, singular, and bounded in the plane xy. Finite electron objects in a nonuniform magnetic field are analyzed.     

Electromagnetic contributions to proton- and neutron-4He scattering

A proper treatment of various electromagnetic contributions toN-⁴He scattering enables one to determinen(p)-⁴He observables fromp(n)-⁴He data. Several calculations ofn-⁴He observables considering different electromagnetic effects are presented. It is shown that the contribution of thep-⁴He Coulomb corrections ton-⁴He polarizations and differential cross sections dominates over other electromagnetic effects forθ _c.m.≧30°. For smaller scattering angles, neutron magnetic scattering is important and produces a divergingn-⁴He differential cross section atθ=0° and a large peak (Mott-Schwinger effect) in the polarization. The influence of thep- andn-⁴He vacuum polarizations on then-⁴He observables is found to be small.     

Mössbauer study of the hyperfine and magnetic properties of organo-di-iron electron reservoirs containing a polyaromatic bridging ligand

Organo di-iron electron reservoirs Fe(CP^*)₂(Ar) ⁿ⁺ withn=2, 1, 0, where Cp^* is C₅(CH₃)₅ and where Ar are the following bridges: biphenyl, dihydrophenanthrene, triphenylene, have been studied by Mössbauer spectroscopy in the solid state. Complexes withn=2, with 36e^? in the coordination spheres of the metals, exhibit the usual diamagnetic behaviour of 18e^?, Fe^II mono-iron systems. Complexes withn=1, 37e^?, are delocalized mixed valence (Fe^IIFe^I) with a spin 1/2; the magnetic hyperfine interaction, measured under an external field, shows equal delocalization of the 37^th e^? on the two iron centers and the two bridging carbon atoms of the biphenylene. Complexes withn=0, formally with 38e^?, have a practically temperature-independent quadrupole splitting, and isomer shift values which constrast with the expected behaviour of independent Fe^I, 19e^? centers. This indicates that the 37^th and 38^th electrons are mostly located on the polyaromatic bridge. Spectra obtained in an external field show a negligible magnetic hyperfine interaction and support this conclusion. In the case of biphenyl and dihydrophenanthrene bridges, this electron localization can be related to a strong intramolecular chemical coupling, evidenced by other spectroscopic and X-ray data [1].     

Pressure Ionization in Nonideal Alkali Plasmas

A system of electrons (e) and ions (i) is considered in which beside the Coulomb interaction short range forces are taken into account, i.e. for the e-i interaction a pseudopotential is used, and for the (classical) ions crystallographic radii are used. For a Cesium plasma the thermodynamic properties are calculated quantumstatistically in a wide temperature-density region. Degeneration effects are taken into account approximately. In the region with bound states the ionization equilibrium is discussed, and the Mott-Transition is investigated critically. A phase transition occurs in the framework of the model chosen at T_c ≈ 4500 K and n^c ≈ 4.10²⁰ cm^?3.     

Magnetic-field-induced retardation of the recombination of nonequilibrium charge carriers in semiconductors

The retardation of the recombination of electrons and holes in semiconductors in an applied uniform magnetic field has been predicted. It has been shown that the recombination time in germanium in the temperature range of T = 1–10 K at charge carrier densities of n _e = 10¹⁰−10¹⁴ cm⁻³ in magnetic fields of B = 3 × 10²−3 × 10⁴ G can be more than two orders of magnitude larger than that at zero magnetic field. This means that, after creation of nonequilibrium charge carriers by their injection at the p-n junction owing to some radiation sources or fast electron irradiation, the semiconductor retains its conductivity for a much longer time at nonzero applied magnetic field. The effect under study can be used, for example, to detect radiation sources.     

Multi-excitonic (N=1,2 and 3) quantum dots in magnetic field: Analytical mapping of correlations (exchange) by multipole expansion

The understanding of the physics of exciton, bi-exciton, tri-exciton and the subsequent insight into controlling the properties of mesoscopic systems holds the key to various exotic optical, electrical and magnetic phenomena like superconductivity, Mott insulation, Quantum Hall effect etc. Many of exciton properties are similar to atomic hydrogen that attracts researchers to explore electronic structure of exciton in quantum dots, but nontriviality arises due to coulombic interactions among electrons and holes. We propose an exact integral of coulomb (exchange) correlation in terms of finitely summed Lauricella functions to examine 3-D exciton of harmonic dots confined in zero and non-zero arbitrary magnetic field. The highlight of our work is the use of exact variational solution for coloumbic interaction between the hole and the electron and evaluation of the cross terms arising out of the coupling among centre-of-mass and relative coordinates. We also have extended the size of the system to generalized N-body problem with N=3,4 for tri-exciton (e-e-h/e-h-h)

and biexciton (e-h-e-h) (e-h-e-h)

respectively by multipole expansions. As a probe we have examined level spacing statistics, energy spectra, specific heat (C_v), magnetization and chemical potential (μ) at low temperatures.     

Magnetic field dependence of the thermoelectric power of n - type gallium arsenide in the extreme quantum limit

The effect of the quantization of the electron energy levels in a strong transverse magnetic field H on the low-temperature thermoelectric power (TEP) S of a high-purity isotropic semiconductor ($\text{n}$ - type gallium arsenide GaAs) is investigated theoretically. The “electron-diffusion” (S_e) and “phonon-drag” (S_p) components of S( = S_e + S_p) are calculated in the extreme quantum limit, when all the electrons in the conduction band are concentrated in the lowest Landau level. The transition to nondegeneracy, which takes place when the bottom of the lowest Landau level is driven through the Fermi level, has a large effect on the variations of S_e and S_p with magnetic field. The results are illustrated with numerical calculations for $\text{n}$ - type GaAs at 4.2 K with 1.2 × 10¹⁶ cm^-3 electrons.     

The effect of electron-hole scattering on transport properties of a 2D semimetal in the HgTe quantum well

The influence of e-h scattering on the conductivity and magnetotransport of 2D semimetallic HgTe is studied both theoretically and experimentally. The presence of e-h scattering leads to the friction between electrons and holes resulting in a large temperature-dependent contribution to the transport coefficients. The coefficient of friction between electrons and holes is determined. The comparison of experimental data with the theory shows that the interaction between electrons and holes based on the long-range Coulomb potential strongly underestimates the e-h friction. The experimental results are in agreement with the model of strong short-range e-h interaction.     

Instabilities of an electron cloud in a Penning trap

We have measured the storage instabilities of electrons in a Penning trap at low magnetic fields. These measurements are carried out as a function of the trapping voltage, for different magnetic fields. It is seen that these instabilities occur at the same positions when the trapping voltage is expressed as a percentage of the maximum voltage, given by the stability limit. The characteristic frequencies at which these instabilities occur, obey a relation that is given by n _zω _z + n ₊ω ₊ + n _-ω _- = 0, where ω _z, ω ₊ and ω _- are the axial, perturbed cyclotron and the magnetron frequencies of the trapped electrons respectively, and the n's are integers. The reason for these instabilities are attributed to higher order static perturbations in the trapping potential. Received 5 August 2002 / Received in final form 14 October 2002 Published online 17 December 2002 RID="a" ID="a"Present address: Dept. of Physics, Rampurhat College, Rampurhat, Birbhum, West Bengal, India. RID="b" ID="b"e-mail: werth@mail.uni-mainz.de     

Semiconductor artificial graphene: Effects in weak magnetic fields

Two-dimensional quantum transport through the stripe of the hexagonal lattice of antidots built in the multimode channel in the GaAs/AlGaAs structure has been studied numerically. It has been found that the low perpendicular magnetic fields (～3 mT) suppress the bulk currents and cause the appearance of the edge Landau states and high positive magnetic resistance on both sides of the Dirac point. Tamm edge states are present in some energy intervals; as a result, the 4e ²/h-amplitude oscillations caused by the quantization of these states on the lattice length are added to the steps of the conductance quantization G _n = (2|n| + 1)2e ²/h.     

Nonisotropic L-conversion-electron — X-ray directional correlations in160Dy

The directional correlations betweenL-conversion electrons andL x-rays have been measured. The electrons were emitted in the 86.78keV 2⁺→0⁺ transition in¹⁶⁰Dy, in the decay of¹⁶⁰Tb. The experimental results areA ₂₂(e _L -x _Li )=0.085 (22),A ₂₂(e _L -x _Lα )=0.0066 (29),A ₂₂(e _L -x _Lβ )=0.0000 (27), andA ₂₂(e _L -x _Lγ )=0.0096 78). These results are in disagreement with published theoretical values. It is suggested that the discrepancy is due to a phase inconsistency in the internal conversion matrix elements and there is good agreement withA ₂₂ values calculated in this work.     

Energy relaxation of two-dimensional electrons in the quantum Hall effect regime

The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τ_e of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ _e ^?1 oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ _e ^?1 is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ _e ^?1 when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ _e ^?1 (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.     

Effective charge in the II–VI and III–V compounds with zincblende or wurtzite type structure

The effective charge in the II–VI and III–V compounds was analyzed by using a linear chain model. On the assumption that the ionic lattice is immersed in a cloud of valence electrons with the dielectric constant of ?(∞) = n²?₀ (n: refractive index, ?₀ = 8·85 × 10^?12f/m), the effective charge on an ion is equal to 2e in the II–VI compounds and to e in the III–V compounds (e: electronic charge), respectively. These values of the effective charge are just n times the Szigeti charge.Although direct connection between neighboring atoms is the main part of the binding force, the fact can not be neglected that the second nearest neighbor atoms are connected by sharing some of valence electrons between them. The electrons in valence bonds contribute to the refractive index and are estimated to be e and 2e per atom in the II–VI and III–V compounds, respectively.     

Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

The low-temperature electrical and magnetotransport characteristics of partially relaxed Si/Si_1−xGe_x heterostructures with two-dimensional electron channel (n_e≥10¹² cm⁻²) in an elastically strained silicon layer of nanometer thickness have been studied. The detailed calculation of the potential and of the electrons distribution in layers of the structure was carried out to understand the observed phenomena. The dependence of the tunneling transparency of the barrier separating the 2D and 3D transport channels in the structure, was studied as a function of the doping level, the degree of blurring boundaries, layer thickness, degree of relaxation of elastic stresses in the layers of the structure. Tunnel characteristics of the barrier between the layers were manifested by the appearance of a tunneling component in the current–voltage characteristics of real structures. Instabilities, manifested during the magnetotransport measurements using both weak and strong magnetic fields are explained by the transitions of charge carriers from the two-dimensional into three-dimensional state, due to interlayer tunneling transitions of electrons.     

Coulomb oscillations in partially open quantum dots

We report tunneling measurements of the Coulomb blockade in a single quantum dot at zero magnetic field and dilution refrigerator temperatures with weak tunneling from the dot to one lead (the ‘closed’ lead, conductanceG_closed) and strong tunneling to the other lead (the ‘open’ lead, conductanceG_open). We observe suppression of the Coulomb oscillations withG_open≈2e²/h, and then see the oscillations return forG_open>2e²/h. The oscillations show a strikingly lower threshold temperature atG_open≈2e²/hthan for greater or lesserG_open.