Effect of silica type and concentrations on the physical properties of EPDM cured by γ -irradiation

This paper reports the results of studies on the thermal and electrical properties of gamma radiation cured composites based on ethylene propylene dieyne rubber (EPDM) reinforced with different concentrations of micro- and nano-silica. The effect of gamma irradiation in the presence of ethylene glycol dimethacrylate (EGDM) as radiation sensitizer on melt flow properties of EPDM was also studied. Thermogravimetric studies of the composites show that the degradation of vulcanizates is controlled mainly by the silica type and its concentration. Increasing the amount of micro- or nano-silica in the vulcanizate decreases the maximum rate of decomposition of the major degradation step compared with that of the unfilled-cured one. The micro- and nano-composites exhibited remarkable heat resistance properties compared with that of the pure EPDM as the filler dispersion of silica inhibited the thermal degradation of the polymeric matrix, which led to the micro and nano-composites showing great improvement in thermal stability. A considerable change in decomposition rate is observed by increasing filler loading from 10 to 39 phr. The dielectric properties of such composites are affected by the silica type and concentration. The dielectric constant and ac-conductivity for all composites were found to increase with increasing silica loading, which is mainly due to the interfacial polarization. The ac-conductivity values of silica/EPDM composites exhibit a strong frequency dependence with both fillers used. The conductance and dielectric constant values have been fitted using a conduction model for all samples.     

The β Phase of Isotactic Polypropylene in TPVs Based on PP/EPDM

β‐Nucleating agent was added into maleic anhydride (MAH) compatiblized isotactic polypropylene (iPP)/ethylene‐propylene‐diene monomer (EPDM) blend systems, dynamically vulcanized by dicumyl peroxide (DCP). The β phase of iPP formed in TPVs was investigated by means of WAXD, and the effect of DCP content, MAH content and system viscosity on the β phase of iPP was also studied. With increasing DCP content, the MFR values of blend systems increased a little and then decreased, indicating that the DCP content showed a remarkable effect on the system viscosity. Also, with increasing MFR, the β phase content increased first and then decreased, while with increasing MAH content, the β phase content decreased sharply.     

Comparison of Properties of Pt/PZT/Pt and Ru/PZT/Pt Ferroelectric Capacitors

Pb（Zr0.4Ti0.6）O3 film prepared by sol-gel spin coating on a Pt/Ti/SiO2/Si substrate is applied to ferroelectric capacitors with Pt or Ru as the top electrode. For the Pt/PZT/Pt and Ru/PZT/Pt ferroelectric capacitors, although with the same ferroelectric film, different top electrode materials incur different properties of PZT capacitors, such as fatigue, leakage, remanent and saturated polarization, except the similar crystal orientations of the PZT film. After 10^10 switch cycles, the remanent polarizations of the Ru/PZT/Pt and Pt/PZT/Pt capacitors decrease to 70% and 84%, respectively. The leakage current density of the latter increases obviously at positive bias after 108 switch cycles, compared with the former. Different materials for the top electrode bring different conditions at the PZT/top electrode interface. The influence of oxygen-vacancy concentration at the PZT/electrode interface and the influence of oxides of the electrode material at the PZT/electrode interface to charge injection can explain the difference of properties of the PZT capacitors with Pt or Ru as the top electrodes.     

Preparation and Characterization of Polyacrylonitrile and Polyacrylonitrile/β-cyclodextrins Microspheres

Polyacrylonitrile (PAN) and PAN/β-cyclodextrin (β-CD) microspheres were prepared via an electrospinning method. The PAN microspheres could be successfully obtained in a suitable range of concentrations of electrospun PAN solutions. When β-CD was added to the PAN solutions, electrospun PAN/β-CD composite spheres were prepared. The morphology of the spheres was characterized by scanning electron microscopy (SEM); it showed that the spheres had uniform diameter and a smooth surface. The composition of the composite microspheres was studied by Fourier transform infrared spectroscopy (FTIR). The results showed that the β-CD was incorporated in the polymer microspheres.     

Squeezing and Higher-order Squeezing Properties of Eigenstates of the Operator akqs

The squeezing and higher-order squeezing properties of k orthonormalized eigenstates of the higher powers akqs(k≥3) of the annihilation operator of two-parameter deformed harmonic oscillator are investigated. It is found that the Nth-power squeezing [N=(m+1/2)k, m=0,1,2,…] can exist in the all of them when k is even.     

FTIR spectra and rovibrational analysis of the ν11 band of trans-ClHCCHF and ν10 of trans-ClHCCDF

High-resolution Fourier transform infrared spectra of natural trans-ClHCCHF and of its isotopologue trans-ClHCCDF have been recorded in the region between 700 and 1150 cm⁻¹ with the purpose to analyze the ν₁₁ fundamental of the main species and the ν₁₀ of its deuterated compound. Both bands, of symmetry species A″, present c-type envelope absorptions. Beside the expected features, the K structure of the P(J), Q(J), and R(J) manifolds was resolved and identified; the assignment of the rovibrational transitions was extended up to J = 92 and K_a = 13 for the trans-³⁵ClHCCHF and up to J = 86 and K_a = 10 for trans-³⁵ClHCCDF. More than 2900 and 2700 lines for the main and deuterated species, respectively, were analyzed by a least-squares procedure and reliable spectroscopic molecular parameters were determined for both isotopologues.     

Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices

Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition （MOCVD） Rapid thermal annealing （RTA） treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AIGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4 ×10^3 Ωcm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7 × 10^17 cm-3 and a resistivity of 5.6Ωcm. The piezoelectric field in the GaN/AlGaN superlattices improves the activation efficiency of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity.     

Excitation of color degrees of freedom of nuclear matter and J/ψ suppression

In high-energy nuclear collisions, the conventional Glauber model is commonly used to evaluate the contribution to J/ψ suppression originating from the inelastic interaction with colorless bound nucleons. This requires an effective value for the J/ψ-nucleon absorption cross-section which is larger than theoretically expected. On the other hand, multiple nucleon-nucleon collisions, mediated by color exchange interactions, excite their color degrees of freedom. We investigate the importance of this effect and find that these excited states provide a larger cross-section for J/ψ absorption. We conclude that the related corrections are important to explain the effective value extrapolated from experiment. Received: 6 November 2000 / Accepted: 5 June 2001     

Microstructure and magnetic properties of a two-phase alloy of α-Fe and metastable Fe3B

Applying the hypercooling technique, the metastable-phase Fe₃B, instead of the stable-phase Fe₂B, is formed directly in the bulk Fe-B eutectic alloy melt and can be further preserved at room temperature. Measurement of magnetic properties shows that, for the bulk Fe-B eutectic alloy with Fe₃B phase, the intrinsic coercivity and retentivity become smaller, and the saturation magnetization is larger, than the stable eutectic alloy (α-Fe/Fe₂B) and some Fe-B amorphous alloys.     

Preparation and Characterization of Hybrid ZnO/Ormosils Films

Hybrid ZnO/ormosils films are prepared by the sol-gel method. A FT-IR spectrometer, 900 UV/VIS/NIR spectrophotometer, atomic force microscope, and ellipsometer are employed to investigate microstructure and optical properties of the films fired at different temperatures. The results show that the films with high transmittance and low surface roughness could be obtained at the heat-treatment temperature of 150℃, the refractive index and thickness of the film are 1.413, 2.11μm, respectively. Higher temperatures （350℃, 550℃） change the film microstructure severely, and then decrease the transmittance of the films,     

Sol–gel route of synthesis of nanoparticles of MgFe2O4 and XRD,FTIR and VSM study

Nanoparticles of MgFe₂O₄ are synthesized using sol–gel autocombustion method. Structural studies are carried out using X-ray diffraction (XRD). The XRD pattern of MgFe₂O₄ provides information about single-phase formation of spinel structure with cubic symmetry. The grain size and lattice constant are obtained using XRD data. The cation distribution is also proposed theoretically. The change in site preference of cations in nano-MgFe₂O₄ is compared with its bulk counterpart. The structural morphology of the nanoparticles is studied using Scanning Electron Microscopy (SEM). Formation of spinel structure is conformed using Fourier transform infrared spectroscopy (FTIR), which also lends support for the cation distribution proposed using XRD data. The effect of nanoregime on parameters such as bond length, vibration frequency and force constant are discussed with the help of FTIR data. The M–H loop of MgFe₂O₄ has been traced using the Vibrating Sample Magnetometer (VSM) and magnetic parameters such as saturation magnetization (M_S), coercivity (H_C) and retentivity (M_R) are obtained from VSM data.     

Structural Peculiarities and Magnetic Properties of Nanoscale Terbium in Tb/Ti and Tb/Si Multilayers

The structure and the magnetic properties of rf-sputtered nauoscale Tb in [Tb/Ti]n and [Tb/Si] multilayers have been studied experimentally. It is found that the structure of Tb layers changes, transforming from a fine-crystalline state of Tb into an amorphous state as the magnetic layer thickness decreases. The observed displacement of a magnetic ordering temperature to the lower temperature range and the shift of magnetic hysteresis obtained in the ZFC-FC terms may be caused by the size effect and the amorphization. Both the first and the second suppress the exchange interaction and decrease the crystalline magnetic anisotropy. The type of material of nonmagnetic spacers between the Tb layers plays a certain role in these changes.     

Micro-Photoluminescence Investigation of Single Quantum Dot and its Molecule of CdSe/ZnSe

The single and a few coupled quantum dots are important for future quantum information sciences and their investigation is also a big challenge in physics. We investigate here the electronic and exciton states and their interaction with each other via micro photoluminescence. The luminescence for single and a few dots as well as a dot molecule of CdSe/ZnSe are measured with very high resolution, under liquid He temperature and magnetic fields and with different polarization of excitation laser. The observed sharp spectral lines are attributed to the atomlike transitions of exciton, trion, biexciton… in the investigated single QD or QD molecule. Band filling, Zeeman splitting, spin transition and their relaxation are observed and investigated＇from the spectra and compared with those of same material in different dimensions, and compared with the primary calculation as well. In addition, quite a few new phenomena, which can not be understood based on our present model and knowledge, are also observed; and some very interesting problems are left for further investigation.     

Thermal Mass of the Gluon and the Disociation of J/ψ and ψ′in QGP Environment

Using thermo-field edynamics method,we calculate the efective mass and Debye screening mass of the gluon at finite temperature and finite density.The critical temperature and density for the dissociation of J/ψ and ψ′are obtained.     

Physical properties and phase diagram of NaFe1-xVxAs

We grew a series of NaFe_1-xV_x As(0 ≤ x ≤ 0.03) single crystals and performed the measurements of resistance,magnetic susceptibility, and specific heat to study the superconducting phase diagram by doping V into Na Fe As. Both the structural and the spin-density-wave(SDW) transitions are slightly suppressed by V-doping. While superconducting transition temperature is enhanced to the maximum value of 15 K when the optimal doping level x = 0.007 and then is suppressed rapidly with further V-doping, displaying a small superconducting dome. Our results suggest that V-impurities should act as strong magnetic scattering centers which cause the sharp suppression of superconductivity in NaFe_1-xV_x As.     

Electrical Characteristics of InGaN/AlGaN and InGaN/GaN MQW Near UV-LEDs

Electrical characteristics of In0.05 Ga0.95N/Al0.07Ga0.9aN and In0.05 Ga0.95N/GaN multiple quantum well （MQW） ultraviolet light-emltting diodes （UV-LEDs） at 400hm wavelength are measured. It is found that for InGaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the Al0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristic of p-n junction either, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency.     

Analysis of the 1S and 2S states of ΛQ and ΞQ with QCD sum rules

In this article,we study the ground states and the first radial excited states of the flavor antitriplet heavy baryon states ∧Q and ΞQ with the spin-parity JP=1/2+ by carrying out operator product expansion up to vacuum condensates of dimension 10 in a consistent way.We observe for the first time that the higher dimensional vacuum condensates play an important role,and obtain very stable QCD sum rules with variations of the Borel parameters for the heavy baryon states.The predicted masses 6.08±0.09 GeV,2.78±0.08 GeV,and 2.96±0.09 GeV for the first radial excited states ∧b(2 S),∧c(2 S),and Ξc(2 S),respectively,are in excellent agreement with the experimental data and support assigning ∧b(6072),∧c(2765),and Ξc(2980/2970) to be the first radial excited states of ∧b,∧c,and Ξc,respectively.The predicted mass 6.24±0.07 GeV for Ξb(2 S) can be confirmed using experimental data in the future.     

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.     

Electronic and crystal structure of α- and β-CeIr2Si2

We present the results of XRD, magnetization, resistivity and specific heat measurements of CeIr₂Si₂ single crystals for both, the low-temperature α-phase and the high-temperature β-phase, respectively. The α-phase adopts the tetragonal ThCr₂Si₂-type whereas the β-phase forms in the CaBe₂Ge₂-type structure. Both the phases remain paramagnetic down to low temperatures, nevertheless both, the magnetization and resistivity exhibit pronounced anisotropy in the whole temperature range of measurements (2-300 K). Results of fitting the temperature dependence of the susceptibility within the interconfiguration-fluctuation model point to the Ce valence fluctuating between 3+ and 4+. The α-phase behaves as a Fermi-liquid (FL) at low temperatures whereas the β-phase exhibits non-Fermi-liquid (NFL) features. The results are discussed in context of other similar polymorphic compounds.