Chemical binding and electronic structure of orthorhombic o’-sialon and silicon dioxynitride with substitution impurities (C, Al, Ga, Be, Mg)

The self-consistent X_α discrete variation ab initio method is used to study the electronic structure and chemical binding in model clusters of orthorhombic O’-sialon and silicon oxynitride containing substitution impurities in cation sublattices. Changes in the local interatomic interactions and effective atomic charges induced by iso- and heterovalent substitutions of Si in Si₂N₂O (Si ⇒ C, Al, Ga, Be, Mg) are discussed. Translated from Zhurnal Strukturnoi Khimii, Vol. 41, No. 4, pp. 687-695, July-August, 2000 This work was supported by RFFR grant No. 98-03-32512.     

Effects of substituents and n-donors on the energies of Si←N,Si←O,and Si=C bonds in hypervalent silenes

The effect of the nature of substituents at sp²-hybridized silicon atom in the R₂Si=CH₂ (R = SiH₃, H, Me, OH, Cl, F) molecules on the structure and energy characteristics of complexes of these molecules with ammonia, trimethylamine, and tetrahydrofuran was studied by the ab initio (MP4/6-311G(d)//MP2/6-31G(d)+ZPE) method. As the electronegativity, χ, of the substituent R increases, the coordination bond energies, D(Si← N(O)), increase from 4.7 to 25.9 kcal mol⁻¹ for the complexes of R₂Si=CH₂ with NH₃, from 10.6 to 37.1 kcal mol⁻¹ for the complexes with Me₃N, and from 5.0 to 22.2 kcal mol⁻¹ for the complexes with THF. The n-donor ability changes as follows: THF ≤ NH₃ < Me₃N. The calculated barrier to hindered internal rotation about the silicon—carbon double bond was used as a measure of the Si=C π-bond energy. As χ increases, the rotational barriers decrease from 18.9 to 5.2 kcal mol⁻¹ for the complexes with NH₃ and from 16.9 to 5.7 kcal mol⁻¹ for the complexes with Me₃N. The lowering of rotational barriers occurs in parallel to the decrease in D _π(Si=C) we have established earlier for free silenes. On the average, the D _π(Si=C) energy decreases by ∼25 kcal mol⁻¹ for NH₃· R₂Si=CH₂ and Me₃N·R₂Si=CH₂. The D(Si←N) values for the R₂Si=CH₂· 2Me₃N complexes are 11.4 (R = H) and 24.3 kcal mol⁻¹ (R = F). sp²-Hybridized silicon atom can form transannular coordination bonds in 1,1-bis[N-(dimethylamino)acetimidato]silene (6). The open form (I) of molecule 6 is 35.1 and 43.5 kcal mol⁻¹ less stable than the cyclic (II, one transannular Si←N bond) and bicyclic (III, two transannular Si←N bonds) forms of this molecule, respectively. The D(Si←N) energy for structure III was estimated at 21.8 kcal mol⁻¹. Dedicated to Academician N. S. Zefirov on the occasion of his 70th birthday. Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 9, pp. 1952–1961, September, 2005.     

Synthesis of new cyclolinear permethyloligosilane-siloxanes

α,ω-Bis(heptamethylcyclotetrasiloxanyloxy)oligodimethylsilanes were synthesized for the first time by heterofunctional condensation of hydroxyheptamethylcyclotetrasiloxane with α,ω-dichloropermethyloligosilanes, Cl(Me₂Si) _n Cl (n=2, 4, or 6). The compounds obtained were characterized by spectroscopic methods. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 3, pp. 544–545, March, 1998.     

Cyclopropane ring opening in the reaction of methylenecyclopropane with silyl radicals stabilized on an activated Aerosil surface

Alkyl type radicals stable at room temperature and incorporating a double bond not conjugated with the free valence, ≡Si−C(=CH₂)−CH₂−CH₂, are formed in the reaction of methylenecyclopropane with silyl radicals (≡SiO)₃Si on an activated Aerosil surface. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 5, pp. 1065–1066, May, 1997.     

Thermodynamic Model for ThO<Subscript>2</Subscript>(am) Solubility in Alkaline Silica Solutions

No thermodynamic data for Th complexes with aqueous Si are available. To obtain such data, extensive studies on ThO₂(am) solubility were carried out as functions of: (1) a wide range of aqueous silica concentrations (0.0004 to 0.14 mol⋅L⁻¹) at fixed pH values of about 10, 11, 12, and 13; and (2) and variable pH (ranging from 10 to 13.3) at fixed aqueous Si concentrations of about 0.006 mol⋅L⁻¹ or 0.018 mol⋅L⁻¹. The samples were equilibrated over long periods (ranging up to 487 days), and the data showed that steady-state concentrations were reached in < 29 days. X-ray diffraction, FTIR, and Raman analyses of the equilibrated solid phases showed that the Th solids were amorphous ThO₂(am) containing some adsorbed Si. The solubility of ThO₂(am) at pH values ranging from 10 to 13.3 at fixed 0.018 mol⋅L⁻¹ aqueous Si concentrations decreases rapidly with an increase in pH, and increases dramatically with an increase in Si concentrations beyond about 0.003 mol⋅L⁻¹ at fixed pH values > 10. The data were interpreted using both the Pitzer and SIT models, and required only the inclusion of one mixed-hydroxy-silica complex of Th [Th(OH)₃(H₃SiO₄)₃²⁻]. Both models provided similar complexation constant values for the formation of this species. Density functional theory calculations predict complexes of this stoichiometry, having six-fold coordination of the Th cation, to be structurally stable. Predictions based on the fitted value of log ₁₀ K ⁰=−18.5±0.7 for the ThO₂(am) solubility reaction involving Th(OH)₃(H₃SiO₄)₃²⁻[ThO₂(am)+3H₄SiO₄+H₂O↔Th(OH)₃(H₃SiO₄)₃²⁻+2H⁺], along with the thermodynamic data for aqueous Si species reported in the literature, agreed closely with the extensive experimental data and showed that under alkaline conditions aqueous Si makes very strong complexes with Th.     

Silicon—nitrogen bond cleavage in N-(dimethylimidosilylmethyl)imides and dimethyl(lactamomethyl)aminosilanes with BF3 etherate as an alternative route to N-(dimethylf luorosilylmethyl)imides and related compounds

N-(Dimethylfluorosilylmethyl)succinimide (2a) and N-(dimethylfluorosilylmethyl)phthalimide (2b) were synthesized by the Si—N bond cleavage in readily accessible N-(dimethylimidosilylmethyl)imides with BF₃ etherate. Analogously, (O→Si)-chelated 1-(dimethylfluorosilylmethyl)-2-pyrrolidone was prepared from 1-(dimethylmorpholinosilylmethyl)-2-pyrrolidone. X-ray diffraction study demonstrated that the silicon atom in the crystals of 2b is pentacoordinated. Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 3, pp. 558–561, March, 2006.     

Interaction of oxygen with an Si(001) surface coated with bismuth

Ionization and Auger spectroscopy show that a submonolayer coating of bismuth on Si(001) reduces the initial attachment coefficient for molecular oxygen by comparison with a clean Si(001) surface by two orders of magnitude, while exposure to >10⁵ Langmuir of O₂ causes bismuth to stimulate the formation of surface silicon oxide having stoichiometry close to SiO₂. Taras Shevchenko Kiev University, 64 ul. Vladimirskaya, Kiev 17, Ukraine 252601. Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 33, No. 2, pp. 124–127, March–April, 1997.     

Effect of the temperature on the composition and ratio of hydrolysis products of 1,2-dichlorotetramethyldisilane

The hydrolysis of 1,2-dichlorotetramethyldisilane was studied at different temperatures. At reduced temperatures, the hydrolysis gave permethylcyclo(oxadisilanes) [(Me₂Si)₂O]_n (n = 2 and 3) and α,ω-dihydroxypermethyloligo(oxadisilanes) HO[(SiMe₂)₂O]_mH (m = 1–5). The formation of the latter was proved by the GC-MS method. Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 4, pp. 722–724, April, 2006.     

Theoretical study of the structural character of weakly bonding silicon carbonyl complexes

The structures, properties and the bonding character for sub-carbonyl Si, SiCO and Si(CO)₂, in singlet and triplet states have been investigated using complete-active-space self-consistent field (CASSCF), density functional theory and second-order M?ller–Plesset methods with a 6-311+G* basis set. The results indicate that the SiCO species possesses a ³∑⁻ ground state, and the singlet ¹Δ excited state is higher in energy than the ³∑⁻ state by 17.3 kcalmol⁻¹ at the CASSCF–MP2/6-311+G* level and by 16.4 kcalmol⁻¹ at the CCSD(T)/6-311+G* level. The SiCO ground state may be classified as silene (carbonylsilene), and its CO^δ− moiety possesses CO⁻ property. The formation of SiCO causes the weakening of CO bonds. The Si–C bond consists of a weak σ bond and two weak π bonds. Although the Si–C bond length is similar to that of typical Si–C bonds, the bond strength is weaker than the Si–C bonds in Si-containing alkanes; the calculated dissociation energy is 26.2 kcalmol⁻¹ at the CCSD(T)/6-311+G* level. The corresponding bending potential-energy surface is flat; therefore, the SiCO molecule is facile. For the bicarbonyl Si systems, Si(CO)₂, there exist two V-type structures for both states. The stablest state is the singlet state (¹A₁), and may be referred to the ground state. The triplet state (³B₁) is energetically higher in energy than the ¹A₁ state by about 40 kcalmol⁻¹ at the CCSD(T)/6-311 + G* level. The bond lengths in the ¹A₁ state are very close to those of the SiCO species, but the SiCO moieties are bent by about 10°, and the CSiC angles are only about 78°. The corresponding ³B₁ state has a CSiC angle of about 54° and a SiCO angle of about 165°, but its Si–C and C–O bonds are longer than those in the ¹A₁ state by about 0.07 and 0.03 ?, respectively. This Si(CO)₂ (¹A₁) has essentially silene character and should be referred to as a bicarbonyl silene. Comparison of the CO dissociation energies of SiCO and Si(CO)₂ in their ground states indicates that the first CO dissociation energy of Si(CO)₂ is smaller by about 7 kcalmol⁻¹ than that of SiCO; the average one over both CO groups is also smaller than that of SiCO. A detailed bonding analysis shows that the possibility is small for the existence of polycarbonyl Si with more than three CO. This prediction may also be true for similar carbonyl complexes containing other nonmetal and non-transition-metal atoms or clusters. Received: 17 April 2002 / Accepted: 11 August 2002 / Published online: 4 November 2002 Acknowledgements. This work was supported by the National Natural Science Foundation of China (29973022) and the Foundation for Key Teachers in University of the State Ministry of Education of China. Correspondence to: Y. Bu e-mail: byx@sdu.edu.ch     

“Inversion substitution” reactions with participation of molecular oxygen: ZH<Subscript>3</Subscript>I + O<Subscript>2</Subscript> → O<Subscript>2</Subscript>ZH<Subscript>3</Subscript> + I (Z = C,Si). The potential energy surface and rate constants

A new class of reactions of molecular oxygen O₂ + ZH₃I → O₂ZH₃ + I (Z = C, Si) proceeding by the mechanism of “inversion substitution” was investigated by quantum chemistry methods and the transition state theory (TST). The profiles of the potential energy surfaces (PES) along the reaction coordinate and the characteristics of transition states were calculated using the DFT approach with the B3LYP hybrid functional and the DZVP basis set. The characteristics of the transition states were then used for TST calculations of the rate constants for the direct and reverse “inversion substitution” reactions and their temperature dependences in the temperature interval 273–2000 K. The activation barriers to the substitution reactions under study were found to be substantially lower than the barriers to the abstraction reactions O₂ + ZH₃I → ZH₂I + HO₂ (by 16.3 kcal mol⁻¹ for Z = C and by 7.2 kcal mol⁻¹ for Z = Si). The results obtained show that the “inversion substitution” reactions dominate over the abstraction reactions in the interaction of molecular oxygen with carbon- and silicon-centered iodides as well as (probably) many other substrates. Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 9, pp. 1803–1807, September, 2008.