Field Effect in the Linear and Nonlinear Conductivity of the Layered Quasi-One-Dimensional Semiconductor TiS3

Field-effect transistor structures based on whiskers of layered quasi-one-dimensional semiconductor TiS₃ have been fabricated. The dependences of the conductivity σ on the gate voltage V_g, as well as the current-voltage characteristics of whiskers (“source-drain”) at different V_g values, have been measured in the temperature range of 4.2-300 K. As the temperature decreases, the sensitivity of the conductivity to the gate voltage, α ≡ 1/σdσ/dV_g, increases in the range from 300 to 80 K and decreases sharply below 80 K, where the nonlinear conductivity begins to depend on V_g. The results can be explained by the formation of an electronic crystal at low temperatures.

     

Collective conduction mechanism in a quasi-one-dimensional TiS<Subscript>3</Subscript> compound

The resistance of TiS₃ single crystal whiskers has been measured as a function of temperature and electric field in the range of 4.2–340 K. At temperatures below 60 K, a strong nonlinearity of the current-voltage characteristics has been revealed. Below 10 K, the current-voltage characteristics are of the threshold type. The results are attributed to the transition of electrons to a collective state, probably, with the formation of a charge density wave.     

On the room temperature multiferroic BiFeO<Subscript>3</Subscript>: magnetic,dielectric and thermal properties

Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at mm-wavelengths, as well as ferroelectric polarization are reported for single crystalline BiFeO₃. A well developed anomaly in the magnetic susceptibility signals the onset of antiferromagnetic order close to 635 K. Beside this anomaly no further indications of phase or glass transitions are indicated in the magnetic dc and ac susceptibilities down to the lowest temperatures. The heat capacity has been measured from 2 K up to room temperature and significant contributions from magnon excitations have been detected. From the low-temperature heat capacity an anisotropy gap of the magnon modes of the order of 6 meV has been determined. The dielectric constants measured in standard two-point configuration are dominated by Maxwell-Wagner like effects for temperatures T > 300 K and frequencies below 1 MHz. At lower temperatures the temperature dependence of the dielectric constant and loss reveals no anomalies outside the experimental errors, indicating neither phase transitions nor strong spin phonon coupling. The temperature dependence of the dielectric constant was measured contact free at microwave frequencies. At room temperature the dielectric constant has an intrinsic value of 53. The loss is substantial and strongly frequency dependent indicating the predominance of hopping conductivity. Finally, in small thin samples we were able to measure the ferroelectric polarization between 10 and 200 K. The saturation polarization is of the order of 40 μC/cm², comparable to reports in literature.     

Thermopower of beech wood biocarbon

This paper reports on measurements of the thermopower S of high-porosity samples of beech wood biocarbon with micron-sized sap pores aligned with the tree growth direction. The measurements have been performed in the temperature range 5–300 K. The samples have been fabricated by pyrolysis of beech wood in an argon flow at different carbonization temperatures (T _carb). The thermopower S has been measured both along and across the sap pores, thus offering a possibility of assessing its anisotropy. The curves S(T _carb) have revealed a noticeable increase of S for T _carb < 1000°C for all the measurement temperatures. This finding fits to the published data obtained for other physical parameters, including the electrical conductivity of these biocarbons, which suggests that for T _carb ∼ 1000°C they undergo a phase transition of the insulator-(at T _carb < 1000°C)-metal-(at T _carb > 1000°C) type. The existence of this transition is attested also by the character of the temperature dependences S(T) of beech wood biocarbon samples prepared at T _carb above and below 1000°C.     

Photoelectric characteristics of nanostructured hydrochemically deposited films of the Pb<Subscript>0.975</Subscript>Sn<Subscript>0.025</Subscript>Se substitutional solid solution

The photoelectric characteristics of Pb_0.975Sn_0.025Se solid solution films prepared by the hydrochemical codeposition of PbSe and SnSe with the subsequent heat treatment in air at 573–700 K have been investigated. The thermal and optical band gaps, the temperature coefficient of the optical band gap, the dark resistance, the volt-watt sensitivity, and the range of spectral sensitivity have been determined in the temperature range of 220–300 K. It has been found that, after heat treatment below 573 K, the films of the Pb_0.975Sn_0.025Se solid solutions possess metallic conductivity, while being heat treated at elevated temperatures, they become semiconductors with p-type conductivity. The composition of the solid solution is independent of the heat treatment temperature; it is formed during deposition.     

Anisotropic electrodynamics of low dimensional metals: Optical studies of (TMTSF)2ClO4

Optical experiments are reported for the metallic state of the linear chain compound (TMTSF)₂ClO₄. For the electric field polarized both along the highly (a) and intermediately (b ) conducting directions, a zero energy (ZE) mode and a finite energy mode (FE) are observed. The large anisotropy in the spectral weight of the FE mode is consistent with the band structure, however the spectral weight of the ZE mode is surprisingly isotropic. In the least conducting (c ^*) direction, the low frequency optical conductivity along with the dc conductivity indicate the presence of a (small) Drude component only at temperatures below 10 K. These observations provide evidence for a correlation induced semimetallic state, with a 3D to 2D crossover with increasing temperature. Received 20 May 1999     

Unusual magnetic hysteresis behavior of oxide spinel MnCo2O4

Magnetic hysteresis behavior of the oxide spinel MnCo₂O₄ has been studied at different temperatures below its T_c≈184 K. Normal hysteresis behavior is observed down to 130 K whereas below this temperature the initial magnetization curve, at higher magnetic fields, lies outside the main loop. No related anomaly is observed in the temperature variation of magnetization or coercivity. However, the anisotropy field overcomes the coercivity below 130 K. The unusual magnetic hysteresis behavior of MnCo₂O₄, at low temperatures, may be associated with irreversible domain wall movements due to the rearrangement of the valence electrons.     

Zero-field splitting in NiSiF6−6H2O and its pressure, stress and temperature dependences: A supplementary study

The zero-field splitting in NiSiF₆?6H₂O was studied as a function, of hydrostatic pressure and uniaxial stress at temperatures above and below 220 K, at which the crystal exhibits a secondorder phase transition. The anisotropy of the thermal expansion coefficients parallel and perpendicular to the trigonal symmetry axis was measured in a wide range of temperatures. On the basis of the obtained data the spin-phonon interaction has been separated from the thermal expansion of the crystal. At high and low temperatures the two contributions have opposite signs and exhibit much higher values above 220 K than below this temperature. This is explained by the high anisotropy of the thermal expansion of the crystal characteristic of the high-temperature phase.     

Low-temperature heat transport in α-HgI2 single crystals

The thermal conductivity of several samples from α-HgI₂ crystals grown by two different methods has been measured from 50 mK to 200 K. The thermal conductivity is found to be intrinsic but anisotropic above 15 K: it is smaller along c-axis than along a-axis, the anisotropy ratio being about 5 between 15 and 200 K. Below 15 K, the thermal conductivity is sample dependent and the calculated Casimir limit is not reached at the lowest temperatures. The results have been interpreted considering phonon scattering by structural defects. A simple quantitative analysis of the curves suggests that phonons are scattered mainly by large clusters of interstitial defects due to the lack of stoichiometry of the crystals; the typical dimensions of these clusters are not smaller than 1 μm perpendicular to c-axis and 0.3 /gmm along c-axis. The presence of plane defects is also detected. Point defect scattering is relatively small and explained by residual metallic impurities and carbon at interstitial sites. The intrinsic anisotropy is briefly discussed.     

Conductivity anisotropy of a TlGaTe<Subscript>2</Subscript> chain single crystal under hydrostatic pressure

Pressure and temperature dependences of the conductivity anisotropy of TlGaTe₂ chain single crystals have been investigated. It has been found that the conductivity anisotropy of TlGaTe₂ can be controlled by choosing the values of temperature and pressure. The temperatures (216, 193, and 77 K) and corresponding pressures (0, 0.31, and 0.71 GPa) have been determined, at which the conductivity of the TlGaTe₂ single crystal becomes isotropic.     

Electrical conductivity anisotropy in alkali feldspar at high temperature and pressure

The electrical conductivity of alkali feldspar along different orientations was determined at 1.0 GPa and at temperatures of 823–1286 K in a cubic anvil apparatus using alternating current impedance spectroscopy. Impedance arcs representing crystal conductivity occur in the frequency range of ～10³–10⁶ Hz. The electrical conductivity of alkali feldspar increases with increasing temperature. The highest electrical conductivities in alkali feldspars were measured along the a-axis, with somewhat lower conductivities along the b-axis, and the lowest conductivities along the c-axis, suggesting minor anisotropy. The activation enthalpies ranged from 100 to 110 kJ/mol. The anisotropic results were combined to yield an isotropic model with an activation enthalpy of 102 kJ/mol. By comparing these results with previous results, we suggest that the dominating charge carriers for alkali feldspars are alkali ions. The minor anisotropy in conductivity for alkali feldspar may not account for the anisotropy of the crust.     

Current-voltage characteristics of polycrystalline (La<Subscript>0.5</Subscript>Eu<Subscript>0.5</Subscript>)<Subscript>0.7</Subscript>Pb<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> at low temperatures

The current-voltage characteristics of the polycrystalline substituted lanthanum manganite (La_0.5Eu_0.5)_0.7Pb_0.3MnO₃ have been measured at temperatures close to the metal-insulator transition temperature and at low temperatures. In both cases, the current-voltage characteristics exhibit nonlinear properties that are strongly dependent on the strength of an applied magnetic field. The mechanisms responsible for the nonlinear properties at these temperatures are found to be different: near the metal-insulator transition, the current-voltage characteristics are determined by the phase layering inside granules, while at low temperatures, they are determined by tunneling of carriers through insulating interlayers of the granules.     

Conduction mechanism of metal-TiO2–Si structures

The conduction model has been proposed for the metal-TiO₂–Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO₂ target and annealing in the air at temperatures T?=?800 and 1050 K. The current-voltage (CVC) and capacitance-voltage characteristics of the structures have been measured over the range of T?=?283–363 K. At positive potentials on the gate, the conductivity of the MIS structures is determined by the space charge-limited current in the dielectric layer.     

Low-temperature structural anomalies in Pr<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>CoO<Subscript>3</Subscript>

The magnetic and crystal structures of the Pr_0.5Sr_0.5CoO₃ metallic ferromagnet have been studied by the neutron diffraction technique. It is demonstrated that below 150 K, the compound is mesoscopically separated into two crystalline phases with different spatial symmetries and with different directions of the magnetic anisotropy. The phase separation exists down to 1.5 K, and at temperatures below 90 K, the low-symmetry phase occupies about 80% of the sample volume. The main structural difference between the phases is the configuration of oxygen atoms around praseodymium and, to a certain extent, around cobalt. The ferromagnetic structure with the magnetic moment lying in the basal plane of the structure (μ_Co ≈ 1.7 μ _B at 1.5 K) arises at 234 K, whereas the component directed along the long axis of the unit cell appears at 130 K. The formation of the new structural phase and change in the orientation of the magnetic moment give rise to the anomalies of the physical and magnetic characteristics of this compound observed earlier at temperatures about 120 K.     

Anisotropy of the hopping conductivity in TlGaSe2 single crystals

The temperature dependences of the conductivities parallel and perpendicular to the layers in layered TlGaSe₂ single crystals are investigated in the temperature range from 10 K to 293 K. It is shown that hopping conduction with a variable hopping length among localized states near the Fermi level takes place in TlGaSe₂ single crystals in the low-temperature range, both along and across the layers. Hopping conduction along the layers begins to prevail over conduction in an allowed band only at very low temperatures (10–30 K), whereas hopping conduction across the layers is observed at fairly high temperatures (T?210 K) and spans a broader temperature range. The density of states near the Fermi level is determined, N _F=1.3×10¹⁹eV·cm³)^?1, along with the energy scatter of these states J=0.011 eV and the hopping lengths at various temperatures. The hopping length R along the layers of TlGaSe₂ single crystals increases from 130 Å to 170 Å as the temperature is lowered from 30 K to 10 K. The temperature dependence of the degree of anisotropy of the conductivity of TlGaSe₂ single crystals is investigated.     

Thermal conductivity of USb2 and UBi2 single crystals

The thermal conductivity (κ) of single crystals of tetragonal uniaxial antiferromagnets USb₂ (T _N = 202 K) and UBi₂ (T _N = 180.8 K) has been measured along the a-axis (κ_a ) over the temperature range from 0.5 to 300 K and along the c-axis (κ_c ) from 0.5 to 70 K. The as-grown samples have residual resistivity ratio (RRR) values of about 500–600 and 100–150 for UBi₂ and USb₂, respectively. The anisotropy of the thermal conductivity (κ_a (T)/κ_c (T) ～ 5) and the low-T Lorenz ratios are discussed in relation to Fermi surface topology for both compounds.     

Magnetic and thermal properties of CuFeS<Subscript>2</Subscript> at low temperatures

The magnetic moment M, the magnetic susceptibility χ, and the thermal conductivity of chalcopyrite CuFeS₂, which is a zero-gap semiconductor with antiferromagnetic ordering, have been measured in the temperature range 10–310 K. It has been revealed that the quantities χ(T) and M(T) increase anomalously strongly at temperatures below ∼100 K. The temperature dependence M(T) is affected by the magnetic prehistory of the sample. An analysis has demonstrated that the magnetic anomalies are associated with the presence of a system of noninteracting magnetic clusters in the CuFeS₂ sample under investigation. The formation of the clusters is most likely caused by the disturbance of the ordered arrangement of Fe and Cu atoms in the metal sublattice of the chalcopyrite, which is also responsible for the phase inhomogeneity of the crystal lattice. The inhomogeneity brings about strong phonon scattering, and, as a result, the temperature dependence of the thermal conductivity coefficient exhibits a behavior characteristic of partially disordered crystals.     

Anisotropy of the electrical conductivity of lithium heptagermanate crystals

The electrical conductivity σ of single crystals of lithium heptagermanate Li₂Ge₇O₁₅ is studied in an electric field in the frequency range 0.5–100 kHz at temperatures ranging from 300 to 700 K. Heating the crystal above 500 K gives rise to a pronounced anisotropy in the electrical conductivity, which differs in magnitude by one to two orders of magnitude for different directions of the measurement field along the crystallographic axes. It is shown that an increase in the electrical conductivity σ with increasing temperature originates from charge transfer with an activation energy U = 1.04 eV. It is assumed that the thermally activated contribution to the electrical conductivity is governed by transport of lithium interstitial ions along channels in the structure of the Li₂Ge₇O₁₅ compound.     

Intrinsic tunnelling effects in self-doped La0.89MnO3 single crystals

Transport properties of self-doped La_0.89MnO₃ single crystals with Néel temperature of T_N ≈139 K have been investigated in wide temperature range 10–300 K. Data suggests that current at low temperature is conducted through a strongly temperature-dependent, but almost bias independent channel operating in parallel with a bias controlled but temperature independent channel. The first channel is associated with transport across an insulating antiferromagnetic matrix while the latter one represents tunnel conductivity through intrinsic tunnel junctions appearing due to interruption of conducting percolating paths by phase separated insulating inclusions. Tunnel character of the conductivity manifests itself in nonlinear current-voltage characteristics and appearance of a zero-bias anomaly in the form of a prominent conductance peak in the vicinity of zero bias. Zero bias anomaly and V-shaped characteristics of the differential conductance at high voltages are ascribed to the formation of local magnetic states in the insulating region of the tunneling junction.     

Thermal transport in the intermetallic compound CeNi<Subscript>4</Subscript>Cr

Electrical resistivity, thermopower (TEP), thermal conductivity and the thermoelectric figure of merit are studied for the CeNi₄Cr compound, which has been previously suggested to be a fluctuating valence system with a tendency to the increase of the effective mass at low temperatures. The analysis of the thermoelectric properties confirms such a possibility and provides characteristic parameters like the Debye temperature, Fermi energy and the position of the f band. Both the thermopower and the magnetic part of the electrical resistivity could be analyzed within a similar model assuming a narrow f-band of the Lorentzian form near the Fermi energy. The thermal conductivity shows that the phonon contribution exceeds the electronic one below 220 K.