Diode-Pumped Passive Q-Switched 946 nm Nd：YAG Laser with a GaAs Saturable Absorber

We report, for the first time to our knowledge, a diode-pumped passive Q-switched 946nm Nd：YAG laser by using a GaAs as saturable absorber. The maximum average output power is 1.24 W at an incident pump power of 15 W, corresponding to a slope efficiency of 10%. Laser pulses with pulse duration of 70ns and repetition rate of 330 kHz are generated.     

Diode-Pumped Quasi-Three-Level Passively Q-Switched Nd：GGG Laser with a Codoped Nd,Cr：YAG Saturable Absorber

We demonstrate the first quasi-three-level passively Q-switched Nd：GGG laser at 937nm using a Nd, Cr：YAG crystal as the saturable absorber. The dependences of the average output power, the repetition rate and the pulse width on the incident pump power are obtained. A maximum average output power of 1.18 W with repetition rate of 35kHz and pulse width of 45ns is achieved at an incident pump power of 18.3 W. The corresponding optical-to-optical and slope efficiencies are 6% and 10%, respectively.     

A Passively Mode－Locked Diode－End－Pumped Nd：YAG Laser with a Semiconductor Saturable Absorber Mirror Grown by Metal Organic Chemical Vapour Deposition

We report the experimentM results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductorsaturable absorber mirror (SESAM) from which we achieved a lOps pulse duration at 150MHz repetition rate.The SESAM was grown by metal organic chemical vapour deposition at low temperature. The recovery time wasmeasured to be 0.5 ps, indicating the potential pulse compression to sub-picoseconds.     

Passive mode locking of a Nd：YAG laser with co－doped Nd, Cr：YAG as saturable absorber

We demonstrate the characteristics of relatively low saturation intensity using co-doped Nd, Cr:YAG as saturable absorber for passively mode locking the Nd:YAG laser. The difference of the saturation intensity between Q-switched and mode-locked operation in co-doped Nd, Cr:YAG was only one to two orders of magnitude, while Cr:YAG was generally reported at a difference of five orders of magnitude. More than 80% mode locking modulation depth was achieved at an incident pump power of 4.4W, corresponding to an intracavity intensity of 6×10^4W/cm^2, using a 68cm long plano-concave cavity.     

Efficient Laser-Diode End-Pumped Passively Q-Switched Mode-Locked Yb：LYSO Laser Based on SESAM

We report an efficient Q-switched laser action based on a semiconductor saturable absorber mirrors （SESAMs） as passively Q-switched laser starter and a Yb：LYSO alloyed crystal as gain material pumped directly by 974nm InGaAs laser diodes. The output pulse duration is measured to be about 7μs, while the average power and the repetition rate of the pulse chain are about 0.92 W and 6.2 kHz, respectively, under 12.5 W absorbed pumping power. The Q-switched mode-locked pulse train is also observed in this setup. The laser performance shows that Yb：LYSO is a promising laser gain medium for laser-diode pumped compact solid-state lasers.     

A Graphene-Based Passively Q-Switched Ho：YAG Laser

A 2.09-μm in-band pumped passively Q-switched Ho： YAG laser is demonstrated. Single layer graphene deposited on a quartz substrate is used as the saturable absorber for the Q-switched operation. The minimum pulse width of 2.11μs is obtained at an average output power of lOOmW, corresponding to a pulse repetition frequency of 57.1 kHz and the pulse energy of 1.75 μJ. The beam quality factors M^2 of the Q-switched laser are 1.18 and 1.22 in the horizontal and longitudinal direction, respectively. The optical-to-optical conversion efficiency of the passively Q-switched laser is 4.3%, which is the highest conversion efficiency in the 2 μm wavelength, to the best of our knowledge. It shows clearly that the Ho： YAG crystal is a potential gain medium in the 2 μm range for the graphene application.     

Antiphase State in Passively Q-Switched Yb：YAG Microchip Lasers with a Nd,Cr：YAG as Saturable Absorber

We experimentally investigate the antiphase dynamics phenomenon that occurs in a diode-pumped passively Q-switched Yb:YAG multimode laser with a Nd,Cr:YAG saturable absorber. Due to the effect of spatial hole burning, the multimode lasers with one, two, or three modes at different pump power are observed, and the pulses sequences display classic antiphase dynamics.     

Cr^4＋：YAG的可饱和吸收特性与被动Q开关性能研究

运用速率方程计算了Ｃｒ＾４＋：ＹＡＧ晶体的可饱和吸收特性参数，包括初始吸收系数，饱和吸收系数，饱和光强和损耗调制度，用Ｃｒ＾４＋：ＹＡＧ对脉冲和连续Ｎｄ：ＹＡＧ激光器进行了被动调Ｑ，在脉冲Ｎｄ：ＹＡＧ激光器上得到了８ｎｓ的调Ｑ激光脉冲，在连续Ｎｄ：ＹＡＧ激光器的调Ｑ中得到了间隔和幅度抖动小于５％的输出脉冲充列。     

Comment on Q-Switched Tm：YAG Laser Intracavity-Pumped by a 1064 nm Laser

The paper published in Chin. Phys. Lett. 26 （2009） 124211 reported a Q-switched 2-tim Tm：YAG laser that is intracavity pumped by a Nd： YAG laser with emission at 1.06μm. However, analysis of the experimental setup concludes that only the Nd：YAG laser is Q-switched, and the Tm：YAG laser operates in the free-generation regime. Therefore, Q-switch operation for the 2μm emission wavelength is not realized.     

用表面态型半导体可饱和吸收镜实现Yb∶YAG激光器被动调Q锁模

制作了一种新型的半导体可饱和吸收镜——表面态型半导体可饱和吸收镜. 用表面态型半导体可饱和吸收镜作为被动锁模吸收体实现了半导体端面泵浦Yb∶YAG激光器被动调Q锁模. 在泵浦功率仅有1.4 W的情况下，获得了调Q锁模脉冲序列，锁模平均输出功率1 mW，锁模脉冲重复频率200 MHz     

A Bidirectional, Diode-Pumped, Passively Mode-Locked Nd：YVO4 Ring Laser with a Low-Temperature-Grown Semiconductor Saturable Absorber Mirror

We report the operation of a bidirectional picosecond pulsed ring Nd：YVO4 laser based on a low-temperaturegrown semiconductor saturable absorber mirror. Except for the laser crystal, the six-mirror ring laser cavity has no intra-cavity elements such as focusing lens or mirror. The bidirectional mode locked pluses are obtained at the repetition rate of 117.5 MHz, pulse duration of 81 ps, power of 2 × 200 mW.     

Q-Switched Tm：YAG Laser Intracavity-Pumped by a 1064nm Laser

We report a Q-switched 2-μm Tm：YAG laser based on intracavity-pumped by a 1064-nm Nd：YAG laser operating at room temperature for the first time. An average output power of 5.1W is obtained with the repetition rate of 30kHz and a pulse width of 300ns. In addition, we demonstrate a 12.5-W continuous-wave 2-μm Tm：YAG laser, which is, to our best knowledge, the highest power for intracavity-pumping configuration.     

Passively Q-Switched Tm,Ho：YVO4 Laser with Cr：ZnS Saturable Absorber at 2 μm

A stable diode-pumped passively Q-switched Tm,Ho：YVO4 laser with Cr：ZnS saturable absorber is reported. The shortest pulse duration of -500 ns with the central wavelength of 2041 nm is obtained at the pump power of 7.4 W, corresponding to the pulse energy of 3.5 μd at repetition rate of 65 kHz.     

Semiconductor saturable-absorber mirror passively Q-switched Yb：YAG microchip laser

A compact passively Q-switched Yb:YAG microchip laser is demonstrated.Featuring a semiconductor saturable-absorber mirror(SESAM),the laser yields pulses of 219 ps when the length of the microchip Yb:YAG crystal is 100 μm and the beam quality is M2< 1.3.To the best of our knowledge,pulses from the proposed laser are the shortest Q-switching pulses obtained from Yb:YAG microchip lasers currently available.     

Timing Jitter and Pulse Width Reduction in a Hybrid Q-Switched Cr,Nd：YAG Laser

We present a detailed study of a combined actively and passively Q-switched （CAPQ） laser with an acousto-optic modulator （AOM） and a codoped Cr^4＋, Nd^3＋ ：YAG crystal The hybrid Q-switch approach is used to produce a short laser pulse with stable and tunable repetition rates. The timing jitter, average pulse width, and average pulse amplitude vary periodically with the AOM modulation frequency under a fixed pump power. The repetition rate of the CAPQ laser can be turned approximately from 4 kHz to 16 kHz with the jitter less than 400 ns.     

High Efficiency Multi-kW Diode-Side-Pumped Nd：YAG Laser with Reduced Thermal Effect

We demonstrate a high efficiency multi-kW diode-side-pumped Nd：YAG laser. High cooling efficiency of the diode-side-pumped module in the laser is achieved. The middle portion of the Nd：YAG rod in the module is cooled by a coolant jet with screwed side surface, and the end-caps of the rod without screwed side surface are cooled by Au coated on the surface. The thermal effect of the laser rod is reduced, which leads to high output power with high optical-optical conversion efficiency. By using three identical Nd：YAG laser modules, an output power of 4.2 kW and beam quality of 58 mm＆#12539;mrad with an optical-optical efficiency of 35% at 1064 nm is obtained in a laser oscillator. By using four identical Nd：YAG laser modules, an output power of 3.1 kW and beam quality of 17 mm＆#12539;mrad with an optical-optical efficiency of 25.8% is demonstrated in a master oscillator power-amplifier system.     

Diode-pumped passively mode-locked femtosecond Yb：（Y0.9La0.1）2O3 ceramic laser

We experimentally demonstrate a diode-pumped passively mode-locked femtosecond laser with Yb 3+ -doped yttrium lanthanum oxide ceramic. Mode-locking is achieved by using a semiconductor saturable absorber mirror, and intracavity dispersion is compensated by a pair of SF6 prisms. Laser pulses as short as 357 fs at a central wavelength of 1 075 nm are obtained. The maximum average output power is 670 mW under 4.5 W of pumping power with a slope efficiency of 20%. To the best of our knowledge, this is the shortest pulse generated from Yb-doped yttrium lanthanum oxide ceramic lasers with a sub-500 fs pulse duration.     

半导体激光泵浦锁模调QNd：YAG板条激光器

报道准连续６０Ｗ半导体激光二极管侧面泵浦的锁模调ＱＮｄ：ＹＡＧ板条激光器，调Ｑ锁模的激光脉冲宽度（ＦＷＨＭ）为６０ｐｓ，调Ｑ脉冲包络宽度为２５０ｎｓ，积分能量１６３μＪ，最大锁模脉冲的峰值功率超过１００ｋＷ。