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Lin Cui Gui-Gen Wang Hua-Yu Zhang Jie-Cai Han Xu-Ping Kuang Ji-Li Tian Rui Sun 《Applied Physics A: Materials Science & Processing》2014,115(1):159-165
Nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Square-patterned Al thin films with the diagonal length of 600 nm, period of 1 um and height of ~200 nm were obtained by the Laser Interference Lithography and Reactive Ion Etching. Patterned Al thin films were subsequently subjected to dual stage annealing due to the melting temperature of Al thin films (660 °C). The first comprised a low temperature oxidation anneal. The hillocks formation on Al thin films was minimized with an oxidation annealing at 450 °C for 24 h. The little change in the morphology of patterned Al thin films was observed at 450 °C for 24 h. This was followed by a high temperature annealing to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results show the patterns were retained on sapphire substrates after high temperature annealing at less than 1200 °C. The XRD and Raman results reveal that the orientation of island patterns by dual stage annealing of patterned Al thin films for 24 h at 450 °C, and 1 h at 1000 °C, was the same as that of the sapphire (0001) substrates. 相似文献
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Interference lithography is used to fabricate a nanoimprint stamp, which is a key step for nanoimprint lithography. A layer of chromium in thickness of about 20 nm is deposited on the newly cleaned fused silica substrate by thermal evaporation, and a layer of positive resist in thickness of 150nm is spun on the chromium layer. Some patterns, including lines, holes and pillars, are observed on the photoresist film by exposing the resist to interference patterns and they are then transferred to the chromium layer by wet etching. Fused silica stamps are fabricated by reactive ion etching with CHF3/O2 as etchants using the chromium layer as etch mask. An atomic force microscope is used to analyse the pattern transfer in each step. The results show that regular hole patterns of fused silica, with average full width 143nm at half maximum (FWHM), average hole depth of 76nm and spacing of 450nm, have been fabricated. The exposure method is fast, inexpensive and applicable for fabrication of nanoimprint stamps with large areas. 相似文献
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为了制备大面积周期性微纳米结构以提高LED的发光效率,建立了劳厄德(Lloyd)干涉光刻系统。简单分析了该干涉光刻系统的工作原理,并介绍了利用干涉曝光工艺制备一维光栅、二维点阵、孔阵列等纳米结构图形的具体实验过程。最后对纳米图形进行结构转移,制备出了金属纳米结构。实验结果表明:利用劳厄德干涉光刻系统,可以在20 mm×20 mm大小的ITO衬底上稳定制备出周期为450 nm的均匀光栅或二维点阵列图形结构,它们的占空比也是可以调节变化的。 相似文献
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Towards Fabrication of Atomic Dopant Wires via Monolayer Doping Patterned by Resist-Free Lithography 下载免费PDF全文
Fabrication of atomic dopant wires at large scale is challenging.We explored the feasibility to fabricate atomic dopant wires by nano-patterning self-assembled dopant carrying molecular monolayers via a resist-free lithographic approach.The resist-free lithography is to use electron beam exposure to decompose hydrocarbon contaminants in vacuum chamber into amorphous carbon that serves as an etching mask for nanopatterning the phosphorus-bearing monolayers.Dopant wires were fabricated in silicon by patterning diethyl vinylphosphonate monolayers into lines with a width ranging from 1 μm down to 8 nm.The dopants were subsequently driven into silicon to form dopant wires by rapid thermal annealing.Electrical measurements show a linear correlation between wire width and conductance,indicating the success of the monolayer patterning process at nanoscale.The dopant wires can be potentially scaled down to atomic scale if the dopant thermal diffusion can be mitigated. 相似文献
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激光直接光刻制作微透镜列阵的方法研究 总被引:2,自引:1,他引:1
介绍了利用激光直接光刻制作8相位台阶菲涅尔衍射微透镜列阵的工艺方法,并对元件的衍射效率及光刻过程中的制作误差进行了分析,透镜列阵在小形Shack-Hartmann波前传感器中得到了应用。 相似文献
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采用激光烧蚀的方法结合激光全息技术,直接在高分子聚合物MEH-PPV薄膜表面烧蚀光栅结构,制备了分布反馈式有机激光器。这一方法具有工艺简单、光栅参数的可控性和重复性好等优点。器件MEH-PPV的膜厚是400 nm。利用波长为355 nm的Nd-YAG纳秒激光器进行单脉冲烧蚀,获得的光栅周期和光栅高度分别为370 nm和 100 nm。利用飞秒激光放大器作为泵浦源激射DFB激光器件,得到激射阈值约为182 μJ·cm-2·pulse-1,光谱的波峰约在609 nm处,半高宽为4.2 nm。通过改变两光束的夹角获得了周期为360, 370, 380, 390 nm的光栅,它们对应的激光波峰分别为602.91, 609.24, 613.26, 619.01 nm。 相似文献
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Fabrication of Two-Dimensional Photonic Crystals with Triangular Rods by Single-Exposure Holographic Lithography 下载免费PDF全文
We demonstrate a single-exposure holographic fabrication of two-dimensional photonic crystal with round- cornered triangular 'atoms' arranged in a triangular lattice. Simulation results show that double absolute photonic band gaps exist in this structure. Our experimental results show that holographic lithography can be used to fabricate photonic crystals not only with various lattice structures but also with various kinds of structures of the atoms, to obtain absolute band gaps or a particular band gap structure. Furthermore, the single-exposure holographic method not only makes the fabrication process simple and convenient but also makes the structures of the atoms more perfect. 相似文献
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在4-inch蓝宝石图形衬底上,基于InGaN/GaN多量子阱结构制备了蓝光LED芯片,并通过与钇铝石榴石黄色荧光粉(YAG∶Ce3+)结合,封装成白光LED器件。简要介绍了外延生长和芯片工艺及封装流程,并对材料特性及器件性能进行了表征。外延片表面形貌良好,蓝光外延片荧光光谱(PL)显示峰值波长为442 nm。对封装后白光芯片进行电学特性测试,得出其开启与限流电压分别为2.7 V与3.6 V。此外,电致发光光谱(EL)含有两个主要的发光峰,分别是440 nm的蓝光峰以及540 nm的黄绿光峰,而随着注入电流的增加,蓝光峰位先蓝移后红移,黄绿光峰位先红移后蓝移再红移。本文中相关的芯片制备及表征技术将对固态照明研究起到一定的促进作用。 相似文献
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Fabrication of Two-Dimensional Photonic Crystals with Controlled Defects by Combination of Holographic Lithography and Two-Photon Polymerization 下载免费PDF全文
A new ternary photopolymer system is used in fabricating photonic crystals (PhCs) with controlled defects by combination of single-photon and two-photon photopolymerization. The former process can produce PhCs in one-step recording with a low-power (tens mW) continuous-wave laser at 532nm, while the latter can create desired defects. The preparation of the material, the optical setup and the preliminary experimental results are given. Compared with other methods, this approach is much more accessible and convenient for use of visible light and has advantages of making PhCs in a large scale quickly and economicaJly and introducing any defects exactly, especially for three-dimensional structures. 相似文献
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为了研究波长在255.3nm的铜蒸气激光倍频在亚微米光刻中的可行性,设计了带宽为1nm的1:1折反射式投影光刻物镜和一个带散射板的光管式均匀照相系统,获得了0.6μm的光刻分辨率。此结果表明,铜激光倍频光可作为亚微米光刻的照明光源。 相似文献
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We propose a scheme to achieve super-resolution of interference pattern with independent laser beams. We perform an experimental observation of a double-slit interference with two orthogonally polarized laser beams. The resolution of the interference pattern measured by a two-photon detection is doubled provided the two beams illuminate the double-slit with certain incident angles. The scheme is simple and can favour both high intensity and perfect visibility. 相似文献
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LD抽运Cr4+∶YAG高重复率被动调Q Nd∶YVO4激光器 总被引:6,自引:5,他引:1
采用Cr4+∶YAG晶体作为可饱和吸收体,实现连续激光二极管(LD)端面抽运的Nd∶YVO4激光器的高重复率被动调Q.在注入抽运功率为8.8 W时,得到重复频率23.8 kHz、平均功率1.21 W的调Q脉冲序列;每个脉冲能量为51 μJ、脉宽为25 ns、峰值功率达到2.03 kW.实验上研究了脉冲重复频率、平均输出功率、脉冲宽度、单脉冲能量与抽运功率、输出镜透过率的关系.实验结果表明,当抽运功率较大时,脉冲重复频率和输出平均功率随着抽运功率的增加而减小,对此进行了合理的理论解释. 相似文献
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Interference of an atomic Bose-Einstein condensate interacting
with a laser field in a double-well potential with dissipation is
investigated. If properly selecting the laser field and the
initial states of the atoms in the two wells, we find that the
intensity exhibits revivals and collapses. The fidelity of
interference is affected by the total number of atoms in the two wells and dissipation. 相似文献
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Femtosecond laser is a perfect laser source for materials processing when high accuracy and small structure size are required. Due to the ultra short interaction time and the high peak power, the process is generally characterized by the absence of heat diffusion and, consequently molten layers. Various induced structures have been observed in materials after the femtosecond laser irradiation. Here, we report on fabrication of micro-optical devices by the femtosecond laser. 1) formation of optical waveguide with internal loss less than 0.5dB/cm in the wavelength region from 1.2 to 1.6 mm, by translating a silica glass perpendicular to the axis of the focused femtosecond laser beam; 2) nano-scale valence state manipulation of active ions inside transparent materials; 3) space-selective precipitation and control of metal nanoparticles inside transparent materials; The mechanisms and applications of the femtosecond laser induced phenomena were also discussed. 相似文献