Mosaic Structure Evolution in GaN Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

We investigate mosaic structure evolution of GaN films annealed for a long time at 800℃ grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show that residual stress in GaN films is relaxed by generating edge-type threading dislocations （TDs） instead of screw-type TDs. Compared to as-grown GaN films, the annealed ones have larger mean twist angles corresponding to higher density of edge-type TDs but smaller mean tilt angles corresponding to lower density of screw-type TDs films. Due to the increased edge-type TD density, the lateral coherence lengths of the annealed GaN films also decrease. The results obtained from chemical etching experiment and grazing-incidence x-ray diffraction （GIXRD） also support the proposed structure evolution.     

Evolution of Surface Morphology of Anthracene Single Crystals Under Annealing

Russian Physics Journal - In this work, the effect of formation of macrosteps under dissolution of the anthracene single crystal surface is shown for the first time. Under standard conditions (room...     

激光轰击过程中纳米碳管复合光限幅材料组成及结构的演变研究

光限幅材料在激光轰击过程中的稳定性将在很大程度上决定其实用化价值。文章采用红外(IR)光谱、拉曼(Raman)光谱、透射电子显微镜(TEM)及孔结构分析等测试方法对纳米碳管(CNTs)复合光限幅材料在激光轰击过程中组成、结构的演变进行跟踪研究。结果表明,在强激光轰击下,复合体系中二氧化硅(SiO₂)基质的组成未发生显著改变且网络结构趋于完整,具有较好的稳定性。掺杂CNTs石墨化程度提高,SiO₂凝胶玻璃基质对其起一定的保护作用。轰击过程产生的热效应使得SiO₂颗粒长大,由其堆积而成的孔随之增大。     

Structural Evolution during the Oxidation Process of Graphite

The structural evolution during the oxidation process of graphite by a modified Hummers method is investigated. The graphite oxide （GO） composition, disorder parameter, and structures are confirmed by means of x-ray diffraction, Fourier transform infrared spectroscopy, Raman, and scanning electron microscope techniques. Results show that： Hydroxyl, carboxyl and ether groups are present in the low-temperature oxide （at 0℃）; and the degree of oxidation is increased with a longer oxidation time. The middle-temperature oxidation （35℃） is a transitory stage with a slight change to the GO structures. While for the high-temperature oxidation （95℃）, the hydroxyl, carboxyl and epoxide functional groups are largely originated on the GO flakes. Hydroxyl groups are transformed into more epoxide groups with longer oxidation time, and at the same time, ether groups are eliminated, leading to defects （such as holes） on the GO flakes.     

Evolution of the Structure and Grain Boundary Ensemble of Nickel during Diffusion Annealing under Conditions a Segregating Impurity (Silver) on Grain Boundaries

Russian Physics Journal - An investigation of the effect of an impurity (silver) segregating on the grain boundaries of nickel on the evolution of the structure and grain-boundary ensemble under...     

制备生物炭的结构特征及炭化机理的XRD光谱分析

XRD光谱分析是研究物质内部结晶结构物质的重要手段。利用X射线技术分析了不同物料来源和制备方式对生物炭结晶结构特征及其炭化机理。结果表明：生物炭均含有d₁₀₁和d₀₀₂晶面衍射峰类石墨微晶纤维素炭,但炭化后析出的盐分随不同物料,差异较大,如牛粪、蓖麻粕以及糠醛渣的CaCO₃含量要高于其他生物炭,而仅牛粪与蓖麻粕含有CaMg(CO₃)₂。随温度升高,玉米秸秆炭中半纤维素优先分解,然后为纤维素石墨微晶化,结晶度提高,向更稳定的碳化合物转化。其中的矿物盐分随着炭化裂解温度升高,由稀土类氧化物→醋酸盐类物质→碳酸盐类物质逐步析出,CaCO₃的含量也随之增多。不同炭化方法的炭化机理不同,先干燥后炭化可促进半纤维素的分解,高温微波处理则是强烈震荡,主要促进物质多键断裂分解,碳酸盐类物质析出相对较少。通过X射线衍射分析可以很好研究生物炭内部结构结晶特征,可有效反映其炭化过程裂解机理。     

退火处理对ZnO薄膜晶体结构和导电性能的影响

利用直流反应磁控溅射法在硅衬底上沉积C轴择优取向的ZnO晶体薄膜,将该样品进行退火处理,并测量了样品的导电性能,结果显示退火处理可以引起薄膜的重结晶,从而改善薄膜的结晶状况,改变薄膜中的化学配比.退火后样品的薄膜电阻相对较小,增加了薄膜中施主的浓度,增强了薄膜的导电性.     

Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices

Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition （MOCVD） Rapid thermal annealing （RTA） treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AIGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4 ×10^3 Ωcm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7 × 10^17 cm-3 and a resistivity of 5.6Ωcm. The piezoelectric field in the GaN/AlGaN superlattices improves the activation efficiency of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity.     

Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

Technical Physics - Modification of Si(111) surface due to ion bombardment and subsequent annealing has been studied. It has been found that annealing following bombardment with 0.3- to 1.0-keV...     

Evolution of Coherent Interphase Boundaries during Annealing of Multilayers: A Monte Carlo Study

Some properties of nanoscale multilayers, as for example the giant magnetoresistance, are expected to depend sensitively on the structure of the interphase boundaries. Recent experimental work aimed to elucidate the effect of annealing on the multilayer structure and properties. In the present study, thermally induced changes of coherent phase boundaries in multilayers with largely immiscible components were investigated by means of the Monte Carlo method based on a vacancy migration algorithm. Two limiting cases of the as-deposited state were considered: chemically sharp, ideally planar phase boundaries as well as strongly mixed, diffuse interfaces. Initially, a rapid demixing and sharpening of concentration profiles were observed. The morphological roughness of chemically nearly sharp interfaces was found to increase in the course of annealing at higher temperatures. The analysis of the evolving phase boundary topography suggests that the observed instability of thin layers of a few monolayers thickness is due to the development of a long-wavelength roughness. The Monte Carlo studies are compared with predictions of an analytical theory on surface roughening.     

热退火诱导纳米银膜形貌变化对表面等离激元共振特性的影响

采用磁控溅射技术制备并通过不同温度的快速热退火得到了不同表面形貌的纳米银膜。利用XRD,SEM和紫外-可见-近红外透射光谱等技术研究了纳米银膜的结构、表面形貌与光学性质。实验结果表明,随着退火温度的升高,银膜开口面积分数、银岛(纳米粒子)间距增大,长宽比减小,银岛由各向异性的蠕虫状变成各向同性的纳米球;表面等离激元共振带发生连续的蓝移,半高宽变窄。分析表明,纳米银膜的表面等离激元共振特性可以通过热退火诱导的表面形貌变化实现调整。     

Effects of Annealing on Schottky Characteristics in A1GaN/GaN HEMT with Transparent Gate Electrode

A1GaN/GaN heterostructure transistors are promising for power and switching applications. In addition, the transparent wide band-gap A1GaN/GaN heterostructure systems have received considerable attention to transparent electronics. Nowdays, Al-doped ZnO （AZO） thin film plays an increas- ingly important role in various fields of transparent electronics.The AZO-gated A1GaN/GaN HEMT with good dc characteristics and frequency character- istics has been reported. Annealing is widely used to improve the electri- cal characteristics of A1GaN/GaN HEMTs. It is re- ported that the Schottky leakage current can be re- duced by over four orders of magnitude by annealing in an A1GaN/GaN heterostructure with ITO/Ni/Au electrode. Pei et al. reported that the transparency of Ni/ITO gates of A1GaN/GaN HEMTs has been sig- nificantly improved after annealing. However, the evaluation of Schottky C V characteristics was ab- sent. Up to now, few results are reported on the Schot- tky annealing characteristics of AZO in A1GaN/GaN HEMT. Thus the effects of annealing on the leakage current, transparency and interface states character- istics need further study.     

GaN的声表面波特性研究

采用金属有机物化学气相外延方法在(0001)面蓝宝石上生长了高质量、高阻的未掺杂(0001)面GaN薄膜。为精确测量GaN薄膜材料的声表面波特性，在GaN薄膜表面上沉积了金属叉指换能器，叉指换能器采用等叉指结构，叉指的数目为40对，叉指间距为15μm。采用脉冲法测量了声表面波在自由表面和金属表面上的速度，并通过计算得到了机电耦合系数(κ^2)。所测量的声表面波速度（ν)为5667m／s，机电耦合系数(κ^2)为1．9％。     

Fe掺杂的GaN薄膜的结构和铁磁性（英文）

本文通过高温氨化由磁控溅射方法制备的Ga₂O₃:Fe薄膜,成功地在单晶硅(100)基底上制备了Fe掺杂的GaN薄膜.X射线衍射结果显示Fe掺杂浓度为0%～7%的GaN薄膜均未发现第二相.磁性测量表明所有Fe掺杂的样品均显示出室温铁磁性,而且每个Fe原子的磁矩随Fe浓度的增加而减小,Fe的浓度为1%时每个Fe的磁矩最大,最大值为1.92μ_B/Fe.     

GaN在辐射场中的物理特性和光谱研究

采用密度泛函理论的B3LYP方法, 在6-311G++(d,p)基组水平上优化了不同外电场(0～0.025 a.u.)下氮化镓分子的基态稳定构型, 在此基础上利用同样的方法计算了氮化镓分子的分子结构、偶极矩、总能量、能隙以及红外光谱, 拉曼光谱, 紫外-可见吸收光谱强度。结果表明, 分子的结构的变化与电场大小呈现强烈的依赖关系。随着正向外加电场的增加, GaN分子键长不断减小, 电偶极距不断减小, 分子总能量不断增大, 分子能隙不断减小, 红外光谱吸收峰出现蓝移现象, 拉曼光谱出现蓝移现象。随着外电场的加强, 分子紫外-可见吸收光谱振子强度出现先减小后增大再减小的反复变化, 其波峰则出现红移现象。     

Surface kinetics of GaN evaporation and growth by molecular-beam epitaxy

The kinetics of surface processes during the growth of GaN by molecular-beam epitaxy (MBE) with ammonia as the source of reactive nitrogen is studied theoretically and experimentally. A model of surface processes is developed taking into account specific effects of the blocking of NH₃ adsorption sites by Group III and Group V surface species. Parameters of the model (respective kinetic rate constants) are determined from comparison with experimental data. It is shown that the evaporation rate of GaN in ammonia atmosphere is much lower than that in vacuum. Kinetics of GaN growth under gallium-rich and nitrogen-rich conditions are compared. Under nitrogen-rich conditions the GaN surface is predicted to be enriched by NH_x surface radicals, in contrast to the case of growth under gallium-rich conditions or of free evaporation in vacuum. It is shown that use of the nitrogen-rich conditions allows one to increase the growth temperature by 80–90°C compared with the case of gallium-rich conditions or plasma-activated MBE. The increased growth temperature is favorable in improving the optical and electrical properties of the material grown.