光自旋霍尔效应及其研究进展

光束在经过非均匀介质后,自旋角动量相反(左、右旋圆偏振)的光子在垂直于入射面的横向相互分离,造成光束的自旋分裂,这种现象叫做光自旋霍尔效应.它类似于电子系统中的自旋霍尔效应:自旋光子扮演自旋电子的角色,而折射率梯度则起外场作用.光自旋霍尔效应为操控光子提供了新的途径,在纳米光学、量子信息和半导体物理方面具有重要的应用前景;同时由于它与凝聚态和高能物理中的带电粒子自旋霍尔效应有高度的相似性和共同的拓扑根源,所以又为测量自旋霍尔效应这类弱拓扑现象提供了独特而又方便的机会.文章简单介绍了光自旋霍尔效应,并总结了近几年国内外的研究进展.     

异常霍尔效应和自旋霍尔效应

异常霍尔效应和自旋霍尔效应是在常规霍尔效应的基础上引发出的2种新现象.本文介绍了这2种现象及其原理和潜在的应用.     

基于Pancharatnam-Berry相位和动力学相位调控纵向光子自旋霍尔效应

提出了一种基于Pancharatnam-Berry相位和动力学相位操控纵向光子自旋霍尔效应的方法.理论分析表明:当光场通过一个由Pancharatnam-Berry相位透镜和动力学相位透镜构成的透镜组时,透镜组会存在两个自旋相关的焦点.首先,当左旋和右旋圆偏振光通过微结构相位延迟为π的Pancharatnam-Berry相位透镜时,由于Pancharatnam-Berry相位的自旋相关性,两个圆偏振分量会获得符号相反的Pancharatnam-Berry相位而导致其中一个被聚焦而另一个发散.然后,在Pancharatnam-Berry相位透镜后再插入普通透镜引入动力学相位调制,由于动力学相位是自旋无关,使得这一透镜组,可以在合适的条件下使不同自旋态的光子分别聚焦于纵向上不同焦点处.纵向自旋分裂由两透镜焦距及间距共同决定,因此可以通过改变两个透镜的焦距及其间距获得任意的纵向自旋分裂值.最后,搭建了一套实验装置,所得实验结果与理论结果一致.     

光子自旋霍尔效应及其在物性参数测量中的应用

光子自旋霍尔效应是指光束在非均匀介质中传输时,自旋角动量相反的光子在垂直于入射 面的方向发生的横向自旋相关分裂。光子自旋霍尔效应可以和电子自旋霍尔效应作类比：自旋光 子扮演自旋电子的角色,折射率梯度扮演外场的角色。光子自旋霍尔效应源于光的自旋-轨道相互 作用,和两类几何相位有关：一类是动量空间的自旋重定向Rytov-Vlasimirskii-Berry 相位;另 一类是斯托克斯参数空间的Pancharatnam-Berry 相位。光子自旋霍尔效应对物性参数非常敏感, 结合量子弱测量技术,在物性参数测量、光学传感等领域具有重要的应用前景。本文将简单分析 光子自旋霍尔效应的物理根源,回顾近几年不同物理系统中光子自旋霍尔效应的研究进展,介绍 光子自旋霍尔效应在物性参数测量中的应用。最后,展望其在光学模拟运算、显微成像、量子成 像等领域的可能发展方向。     

二维电介质光子晶体中量子自旋与谷霍尔效应共存的研究

基于量子自旋霍尔或谷霍尔效应的拓扑光子结构具有对缺陷免疫和抑制背向散射的特性,对设计新型低损耗的光子器件起到了关键作用.本文巧妙设计了一种具有时间反演对称性的二维电介质光子晶体,实现了量子自旋霍尔效应和量子谷霍尔效应的共存.首先基于蜂巢结构排布的硅柱经过收缩扩张,打开了布里渊区Γ点的四重简并点形成拓扑平庸或非平庸的光子带隙,实现量子自旋霍尔效应.经过扩张后的蜂巢晶格演化成为Kagome结构,之后在Kagome晶格中加入正负扰动,打破光子晶体的空间反演对称性,导致布里渊区的非等价谷K和K′的简并点打开并出现完整带隙,实现了量子谷霍尔效应.数值计算结果表明,由拓扑平庸与非平庸、正扰动与负扰动的光子晶体组成的界面上可实现单向传输且对弯曲免疫的拓扑边缘态.最后,设计了基于两种效应共存的四通道系统,此系统为光学编码与稳健信号传输提供潜在方法,为电磁波的操纵提供了更大的灵活性.     

纳米金属薄膜中光子自旋霍尔效应的最佳弱测量

光子自旋霍尔效应是一种潜在的精密测量工具,在探测微结构材料结构参数变化的研究中具有重要的物理意义。基于光子自旋霍尔效应的弱测量模型研究了纳米金属薄膜中的光子自旋霍尔效应,研究结果表明当弱测量中放大角取相应的特殊值时(即最佳弱测量点),纳米金属薄膜中光子自旋霍尔效应的放大后横移值可达到最大,大大提高了光子自旋霍尔效应的探测精度;在最佳弱测量点得到的放大后横移可以更精确地推断出金属薄膜的实际厚度。实验结果与理论分析符合较好,该方法为研制基于光子自旋霍尔效应的精密测量工具提供了理论与实验基础。     

半导体中自旋轨道耦合及自旋霍尔效应

本文主要评述和介绍半导体微结构中自旋轨道耦合的研究和最近的研究进展。我们细致地讨论了半导体微结构中自旋轨道耦合的物理起源和窄带隙半导体量子阱中的自旋霍尔效应。我们发现目前国际上广泛采用的线性Rashba模型在较大的电子平面波矢处失效:即自旋轨道耦合导致的能带自旋劈裂不再随电子波矢的增加而增加,而是开始下降,即出现强烈的非线性行为。这种非线性的行为起源于导带和价带间耦合的减弱。这种非线性行为还会导致电子的D’yakonov-Perel’自旋弛豫速率在较高能量处下降,与线性模型的结果完全相反。在此基础上,我们构造统一描述电子和空穴自旋霍尔效应的理论框架。我们的方法可以非微扰地计入自旋轨道耦合对本征自旋霍尔效应的影响。我们将此方法应用于强自旋轨道耦合的情形,即窄带隙CdHgTe/CdTe半导体量子阱。我们发现调节外电场或量子阱的阱宽可以作为导致量子相变和本征自旋霍尔效应的开关。我们的工作可能会为区别和实验验证本征自旋霍尔效应提供物理基础。     

半导体中自旋轨道耦合及自旋霍尔效应

本文主要评述和介绍半导体微结构中自旋轨道耦合的研究和最近的研究进展。我们细致地讨论了半导体微结构中自旋轨道耦合的物理起源和窄带隙半导体量子阱中的自旋霍尔效应。我们发现目前国际上广泛采用的线性Rashba模型在较大的电子平面波矢处失效：即自旋轨道耦合导致的能带自旋劈裂不再随电子波矢的增加而增加,而是开始下降,即出现强烈的非线性行为。这种非线性的行为起源于导带和价带间耦合的减弱。这种非线性行为还会导致电子的D’yakonov Perel’自旋弛豫速率在较高能量处下降,与线性模型的结果完全相反。在此基础上,我们构造统一描述电子和空穴自旋霍尔效应的理论框架。我们的方法可以非微扰地计入自旋轨道耦合对本征自旋霍尔效应的影响。我们将此方法应用于强自旋轨道耦合的情形,即窄带隙CdHgTe／CdTe半导体量子阱。我们发现调节外电场或量子阱的阱宽可以作为导致量子相变和本征自旋霍尔效应的开关。我们的工作可能会为区别和实验验证本征自旋霍尔效应提供物理基础。     

金属薄膜中的逆自旋霍尔效应

自旋流的产生和测量是自旋电子学面临的重大挑战.逆自旋霍尔效应提供了对自旋流进行电学测量的有效手段.文章总结了近年来人们对金属薄膜中的逆自旋霍尔效应的研究,从非局域电注入、铁磁共振注入、声波共振注入和圆偏振光注入这四种不同的自旋流注入方式来介绍逆自旋霍尔效应的物理机制、实现方式和影响因素.     

金属薄膜中的逆自旋霍尔效应

自旋流的产生和测量是自旋电子学面临的重大挑战．逆自旋霍尔效应提供了对自旋流进行电学测量的有效手段．文章总结了近年来人们对金属薄膜中的逆自旋霍尔效应的研究,从非局域电注入、铁磁共振注入、声波共振注入和圆偏振光注入这四种不同的自旋流注入方式来介绍逆自旋霍尔效应的物理机制、实现方式和影响因素．     

Photonic spin Hall effect and terahertz gas sensor via InSb-supported long-range surface plasmon resonance

We propose a simple one-dimensional grating coupling system that can excite multiple surface plasmon resonances for refractive index(RI)sensing with self-reference characteristics in the near-infrared band.Using theoretical analysis and the finite-difference time-domain method,the plasmonic mechanism of the structure is discussed in detail.The results show that the excited resonances are independent of each other and have different fields of action.The mode involving extensive interaction with the analyte environment achieves a high sensitivity of 1236 nm/RIU,and the figure of merit(FOM)can reach 145 RIU-1.Importantly,the mode that is insensitive to the analyte environment exhibits good self-reference characteristics.Moreover,we discuss the case of exchanging the substrate material with the analyte environment.Promising simulation results show that this RI sensor can be widely deployed in unstable and complicated environments.     

Asymmetrical photonic spin Hall effect based on dielectric metasurfaces

The photonic spin Hall effect has attracted considerable research interest due to its potential applications in spin-controlled nanophotonic devices. However, realization of the asymmetrical photonic spin Hall effect with a single optical element is still a challenge due to the conjugation of the Pancharatnam-Berry phase, which reduces the flexibility in various applications. Here, we demonstrate an asymmetrical spin-dependent beam splitter based on a single-layer dielectric metasurface exhibiting strong and controllable optical response. The metasurface consists of an array of dielectric nanofins, where both varying rotation angles and feature sizes of the unit cells are utilized to create high-efficiency dielectric metasurfaces, which enables to break the conjugated characteristic of phase gradient. Thanks to the superiority of the phase modulation ability, when the fabricated metasurface is under normal incidence with a wavelength of 1550 nm, the left-handed circular polarization (LCP) light exhibits an anomalous refraction angle of 28.9°, while the right-handed circular polarization (RCP) light transmits directly. The method we proposed can be used for the flexible manipulation of spin photons and has potentials in high efficiency metasurfaces with versatile functionalities, especially with metasurfaces in a compact space.     

NiFe/Pt薄膜中角度相关的逆自旋霍尔效应

NiFe/Pt双层薄膜样品在铁磁共振时, NiFe磁矩进动所产生的自旋流注入到Pt层中, 由于逆自旋霍尔效应产生直流电压V_ISHE, 此电压会叠加到NiFe薄膜由于自旋整流效应而产生的电压V_SRE 上, 实验测量所得电压为V_ISHE和V_SRE的叠加. 为了区分这两种不同机理对电压的贡献, 本文采取旋转外加静磁场的方法, 通过分析所测电压随磁场角度的变化从而分离出V_ISHE 的大小. 研究结果表明, 相比于单层NiFe(20 nm)薄膜样品, NiFe(20 nm)/Pt(10 nm)双层膜样品中由于NiFe自旋注入到Pt 中导致铁磁共振线宽增加. 与逆自旋霍尔效应产生的电压相比, 自旋整流效应的贡献较小, 但不可忽略. 本文工作有助于认清铁磁/非磁性金属材料中的自旋相关效应, 并提供了一种准确的分析逆自旋霍尔效应的方法.     

Enhanced photonic spin Hall effect with subwavelength topological edge states

Photonic structures offer unique opportunities for controlling light‐matter interaction, including the photonic spin Hall effect associated with the transverse spin‐dependent displacement of a light beam that propagates in specially designed optical media. However, due to small spin‐orbit coupling, the photonic spin Hall effect is usually weak at the nanoscale. Here we suggest theoretically and demonstrate experimentally, in both optics and microwave experiments, the photonic spin Hall effect enhanced by topologically protected edge states in subwavelength arrays of resonant dielectric particles. Based on direct near‐field measurements, we observe the selective excitation of the topological edge states controlled by the handedness of the incident light. Additionally, we reveal the main requirements to the symmetry of photonic structures to achieve the topology‐enhanced spin Hall effect, and also analyse the robustness of the photonic edge states against the long‐range coupling.

     

The spin Hall effect in single-crystalline gold thin films

The spin Hall effect has been investigated in 10-nm-thick epitaxial Au(001) single crystal films via H-pattern devices,whose minimum characteristic dimension is about 40 nm. By improving the film quality and optimizing the in-plane geometry parameters of the devices, we explicitly extract the spin Hall effect contribution from the ballistic and bypass contribution which were previously reported to be dominating the non-local voltage. Furthermore, we calculate a lower limit of the spin Hall angle of 0.08 at room temperature. Our results indicate that the giant spin Hall effect in Au thin films is dominated not by the interior defects scattering, but by the surface scattering. Besides, our results also provide an additional experimental method to determine the magnitude of spin Hall angle unambiguously.     

Enhancing terahertz photonic spin Hall effect via optical Tamm state and the sensing application

The photonic spin Hall effect (PSHE), characterized by two splitting beams with opposite spins, has great potential applications in nano-photonic devices, optical sensing fields, and precision metrology. We present the significant enhancement of terahertz (THz) PSHE by taking advantage of the optical Tamm state (OTS) in InSb-distributed Bragg reflector (DBR) structure. The spin shift of reflected light can be dynamically tuned by the structural parameters (e.g. the thickness) of the InSb-DBR structure as well as the temperature, and the maximum spin shift for a horizontally polarized incident beam at 1.1 THz can reach up to 11.15 mm. Moreover, we propose a THz gas sensing device based on the enhanced PSHE via the strong excitation of OTS for the InSb-DBR structure with a superior intensity sensitivity of 5.873×10⁴ mm/RIU and good stability. This sensor exhibits two orders of magnitude improvement compared with the similar PSHE sensor based on InSb-supported THz long-range surface plasmon resonance. These findings may provide an alternative way for the enhanced PSHE and offer the opportunity for developing new optical sensing devices.     

Intrinsic spin Hall effect in silicene: transition from spin Hall to normal insulator

An intrinsic contribution to the spin Hall effect in two‐dimensional silicene is considered theoretically within the linear response theory and Green's function formalism. When an external voltage normal to the silicene plane is applied, the spin Hall conductivity is shown to reveal a transition from the spin Hall insulator phase at low bias to the conventional insulator phase at higher voltages. This transition resembles the recently reported phase transition in bilayer graphene. The spin–orbit interaction responsible for this transition in silicene is much stronger than in graphene, which should make the transition observable experimentally. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)