共查询到20条相似文献,搜索用时 109 毫秒
1.
2.
采用磁控溅射技术制备并通过不同温度的快速热退火得到了不同表面形貌的纳米银膜。利用XRD,SEM和紫外-可见-近红外透射光谱等技术研究了纳米银膜的结构、表面形貌与光学性质。实验结果表明,随着退火温度的升高,银膜开口面积分数、银岛(纳米粒子)间距增大,长宽比减小,银岛由各向异性的蠕虫状变成各向同性的纳米球;表面等离激元共振带发生连续的蓝移,半高宽变窄。分析表明,纳米银膜的表面等离激元共振特性可以通过热退火诱导的表面形貌变化实现调整。 相似文献
3.
应用有限元方法, 研究金纳米球壳对的几何结构参数及物理参量对其表面等离激元共振的散射及消光光谱的影响, 并根据等离激元杂化理论进行了理论分析. 结果表明, 随着金壳厚度的增加, 金纳米球壳对的散射及消光共振峰先发生蓝移而后红移, 而随着金纳米球壳间隙的减小, 或者随着金纳米球壳的内核尺寸或内核介质折射率的增大, 散射及消光共振峰均发生红移; 随着金壳厚度或内核尺寸减小, 或者随着内核介质折射率增大, 金纳米球壳对的散射与消光共振强度减弱, 而随着金壳间隙的减小, 金纳米球壳对的散射共振强度先增强后减弱, 而消光共振强度逐渐增强, 数值模拟与理论分析一致. 相似文献
4.
5.
6.
7.
8.
对通过棱镜耦合的太赫兹表面等离激元共振传感器的工作特性进行了理论分析.此类器件在可见光波段工作时,在由样品折射率、金属膜层性质和厚度决定的共振角度下会出现一个反射极小峰;但工作在太赫兹频率时,表面等离激元共振现象表现为一个反射增强的尖峰,而且这一共振角度与棱镜和样品的折射率之间存在一个简单的对应关系,并不依赖于棱镜所镀... 相似文献
9.
基于物理中发生在金属表面的表面等离激元现象 ,阐述表面等离激元共振生物传感分析原理 ;进而建立表面等离激元共振生物传感成像。给出应用表面等离激元共振研究生物单元相互作用的实例。 相似文献
10.
11.
本文采用直流磁控溅射方法在普通浮法玻璃基底上制备了立方多晶铁锰矿结构的铟锡氧化物(indium tin oxide, ITO)薄膜,并对其进行了结晶性、表面粗糙度、紫外-可见吸收光谱、折射率、介电常数及霍尔效应的测试.研究了溅射时基底温度的改变对于ITO薄膜的光电、表面等离子体性质的影响.随着基底温度由100?C升高至500?C,其光学带隙(3.64—3.97eV)展宽,减少了电子带间跃迁的概率,有效降低了ITO薄膜的光学损耗.与此同时,对应ITO薄膜的载流子浓度(4.1×10~(20)-—2.48×10~(21)cm~(-3))与迁移率(24.6—32.2 cm~2·V~(-1)·s~(-1))得到提高,电学损耗明显降低. 相似文献
12.
13.
Transparent and conducting indium tin oxide (ITO) thin films were deposited on soda lime glass substrates by RF plasma magnetron sputtering at room temperature. The effect of thickness (100, 200 and 300?nm) on the physical (structural, optical, electrical) properties of ITO thin films was investigated systematically. It is observed that with an increase in thickness, the X-ray diffraction data indicate polycrystalline films with grain orientations predominantly along (222) and (400) directions; the average grain size increases from 10 to 30?nm; the optical band gap increases from 3.68 to 3.73?eV and the transmission decrease from 80% to 70% . Four-point probes show a low resistivity (2.4×10?5?Ω?cm) values for film with a thickness 300?nm. Present work shows that the ITO is a promising transparent conductive oxide material for the solar cell application. 相似文献
14.
Effects of annealing process on characteristics of fully transparent zinc tin oxide thin-film transistor 下载免费PDF全文
Annealing effect on the performance of fully transparent thin-film transistor (TTFT), in which zinc tin oxide (ZnSnO) is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/(V.s) and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated. 相似文献
15.
A highly sensitive surface plasmon resonance (SPR) based fiber optic sensor with indium oxide (In2O3) layer coated on the core of the optical fiber is presented and theoretically analyzed. The sensitivity of the SPR based fiber optic sensor has been evaluated numerically. It is shown that the proposed SPR based fiber optic sensor with In2O3 layer possesses high sensitivity in the near infrared region of spectrum, which needs attention to many environmental and security applications and offers more accurate and highly reproducible measurements. In addition, the sensitivity of the SPR based fiber optic sensor decreases with the increase in the thickness of In2O3 layer. With sensitivity as high as 4600 nm/RIU, the 170 nm thick In2O3 layer based fiber optic SPR sensor demonstrates better performance. 相似文献
16.
Kewei Sun Wancheng ZhouXiufeng Tang Zhibin HuangFa Lou Dongmei Zhu 《Applied Surface Science》2011,257(22):9639-9642
Indium tin oxide (ITO) films were deposited on glass substrates at temperatures ranging from 100 °C to 400 °C by direct current magnetron sputtering. The mean infrared emissivities at the waveband of 8-14 μm were measured in process of heating and cooling between room temperature and 350 °C. Microstructure and phases of ITO films before (Group A) and after (Group B) heat treatment were characterized by SEM and XRD, respectively. Electrical properties were characterized with a four-point probe method and by Hall measurement system. During heat treatment, the infrared emissivity of the film increases with the increase of temperature, and decreases with the decrease of temperature. While, the infrared emissivity of the films decreases slightly around 250 °C in heating process. On the other hand, after heat treatment, the crystalline phases of the films have no obvious change. However, both the resistivity and the infrared emissivity of all films decrease. 相似文献
17.
Stefano D’Elia Federica Ciuchi Carlo Versace Giuseppe Strangi Roberto Bartolino. 《Applied Surface Science》2009,255(16):7203-7211
Float glass substrates covered by high quality ITO thin films (Balzers) were subjected for an hour to single thermal treatments at different temperature between 100 °C and 600 °C. In order to study the electric and optical properties of both annealed and not annealed ITO-covered float glasses, ellipsometry, spectrophotometry, impedance analysis, and X-ray measurements were performed. Moreover, variable angle spectroscopic ellipsometry provides relevant information on the electronic and optical properties of the samples. ITO film is modeled as a dense lower layer and a surface roughness layer. The estimated optical density for ITO and the optical density of the surface roughness ITO layer increases with the annealing temperature. In the near-IR range, the extinction coefficient decreases while the maximum of the absorption in the near UV range shift towards low photon energy as the annealing temperature increases. Spectrophotometry was used to estimate the optical band-gap energy of the samples. The thermal annealing changes strongly the structural and optical properties of ITO thin films, because during the thermal processes, the ITO thin film absorbs oxygen from air. This oxygen absorption decreases the oxygen vacancies therefore the defect densities in the crystalline structure of the ITO thin films also decrease, as confirmed both by ellipsometry and X-ray measurements. 相似文献
18.
19.
Low-cost,high performance surface plasmon resonance-compatible films characterized by the surface plasmon resonance technique 下载免费PDF全文
A new analytical method based on the surface plasmon resonance (SPR) technique is presented, with which SPR curves for both wavelength and angular modulations can be obtained simultaneously via only a single scan of the incident angle. Using this method, the SPR responses of TiO2-coated Cu films are characterized in the wavelength range from 600 nm to 900 nm. For the first time, we determine the effective optical constants and the thicknesses of TiO2-coated Cu films using the SPR curves of wavelength modulation. The sensitivities of prism-based SPR refractive index sensors using TiO2-coated Cu films are investigated theoretically for both wavelength and angular modulations, the results show that in the case of sensitivity with wavelength modulation, TiO2-coated Cu films are not as good as the Au film, however, they are more suitable than the Au film for SPR refractive index sensors with angular modulation because a higher sensitivity can be achieved. 相似文献
20.
光纤表面等离子体共振传感器在高灵敏度传感和在线实时监测等领域具有重要意义. 设计了一种六重准晶体结构环形通道光纤表面等离子体共振传感器, 基于有限元法对该传感器的传感特性进行了数值模拟. 研究了光纤各结构参量对传感器特性的影响规律. 研究结果表明: 待测液折射率的有效监测范围为1.25–1.331, 最高灵敏度可达26400 nm·RIU-1, 传感器具有损耗谱杂峰少、探测范围广、灵敏度高、设计灵活性高和光路可弯曲等特点, 在生化检测、公共安全、环境污染监测以及高灵敏度传感等领域具有广泛的应用前景. 相似文献