Intrinsic memory characteristic of polycrystalline ZnTe film originating from Mott variable range hopping conduction

The resistive switching characteristics of Au/ZnTe/ITO structure with polycrystalline ZnTe film as resistive switching layer is investigated. Macroscopically, 100 bipolar switching cycles under the direct current (dc) voltages were carried out and the conduction states can retain for several hours. Microscopically, reading and writing operations can be achieved on ZnTe film with Au top electrode replaced by conductive Atomic Force Microscopy (c-AFM) tip. The I–V characteristic in low resistance state (LRS) is linear in the whole range of voltage. The I–V characteristic in high resistance state (HRS) is linear in the low voltage while it obeys Schottky emission in the high voltage, and Schottky barrier height is symmetric in the positive and negative voltage. During linear I–V characteristic voltage range, the electrons transport between adjacent point defects via Mott variable range hopping. The higher hopping distance and higher activation energy in HRS contribute to the higher resistance value in HRS compared with LRS. Impedance spectroscopy in HRS and LRS both behave as a semicircle, which accords with the semiconductor-like characteristic of conductive point defects. Photoluminescence (PL) spectroscopy indicates the decisive role of deep level defects in conduction. This study confirms the intrinsic resistive switching characteristic of ZnTe film and provides a new choice for intrinsic non-oxides material in nonvolatile memory application.     

Coexistence of nonvolatile unipolar and volatile threshold resistive switching in the Pt/LaMnO3/Pt heterostructures

Coexistence of nonvolatile unipolar and volatile threshold resistive switching is observed in the Pt/LaMnO₃ (LMO)/Pt heterostructures. The nonvolatile unipolar memory is achieved by applying a negative bias, while the volatile threshold resistive switching is obtained under a positive bias. Additionally, the pristine low resistance state (LRS) could be switched to high resistance state (HRS) by the positive voltage sweeping, which is attributed to the conduction mechanism of Schottky emission. Subsequently, the insulator-to-metal transition in the LMO film due to formation of ferromagnetic metallic phase domain contributes to the volatile threshold resistive switching. However, the nonvolatile unipolar switching under the negative bias is ascribed to the formation/rupture of oxygen-vacancy conducting filaments. The simultaneously controllable transition between nonvolatile and volatile resistance switching by the polarity of the applied voltage exhibits great significance in the applications of in-memory computing technology.     

Bipolar resistive switching in BiFe_(0.95)Zn_(0.05)O_3 films

Bipolar resistive switching is studied in BiFe0.95Zn0.05O3 films prepared by pulsed laser deposition on （001） SrTiO3 substrate, with LaNiO3 as the bottom electrode, and Pt as the top electrode. Multiple steps of resistance change are ob- served in the resistive switching process with a slow voltage sweep, indicating the formation/rupture of multiple conductive filaments. A resistive ratio of the high resistance state （HRS） to the low resistance state （LRS） of over three orders of mag- nitude is observed. Furthermore, the conduction mechanism is confirmed to be space-charge-limited conduction with the Schottky emission at the interface with the top Pt electrodes in the HRS, and Ohmic in the LRS. Impedance spectroscopy demonstrates a conductive ferroelectric/interfacial dielectric 2-layer structure, and the formation/rupture of the conductive filaments mainly occurs at the interfacial dielectric layer close to the top Pt electrodes.     

Unipolar resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO2/Si substrate

Amorphous Pr_0.7Ca_0.3MnO₃ (APCMO) films were grown on a Pt/Ti/SiO₂/Si (Pt–Si) substrate at temperatures below 500 °C and the Pt/APCMO/Pt–Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt–Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.     

Analysis of the resistive switching behaviors of vanadium oxide thin film

We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer(Agilent B1500A),and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope(CAFM).The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state(LRS) and high resistance state(HRS) can be observed under either positive or negative sweep.The CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage.The Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.     

Resistive switching behavior and mechanism of room-temperature-fabricated flexible Al/TiS2-PVP/ITO/PET memory devices

The mixture of two-dimensional (2D) TiS₂ nanoflakes and polyvinylpyrrolidone (PVP) exhibits a nonvolatile, bipolar resistive switching behavior with a low resistance state (LRS)/high resistance state (HRS) current ratio of ～10² in the devices with a flexible Al/TiS₂-PVP/indium tin oxide (ITO)/polyethylene terephthalate (PET) structure. The polymer-assistant liquid-phase exfoliation of 2D nanoflakes from TiS₂ bulk material is processed in low-boiling solvent. And the fabrication process of these devices is performed entirely at room temperature. Such an energy-saving and scalable production process indicates a huge potential of large-scale industrial application. The AFM and TEM characterizations showed that the exfoliated 2D TiS₂ are flakes at micrometer scale with a layer-number of mostly 7 or 8. Both the HRS and the LRS can be kept for more than 10⁴ s. The endurance of devices was obtained over 100 direct current (DC) sweeping cycles with remarkable separations between different resistive states. The distributions of writing (set) and erasing (reset) voltages show that set and reset voltages are small (<2 V). Also, the resistive switching characteristics of the devices are stable during 1000 bending cycles. The switching behavior is explained by the thinning and recovery of Schottky barriers within devices.     

Analysis of resistive switching behaviors of vanadium oxide thin film

We demonstrated the polarization of resistive switching for Cu/VO_x/Cu memory cell. Switching behaviors of Cu/VO_x/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I-V characteristics of VO_x/Cu was characterized by conductive atomic force microscope (CAFM). The I-V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VO_x/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.     

电泳沉积法制备的Zn1-xCxO薄膜的结构及阻变性能

采用电泳沉积法在FTO导电玻璃基片上制备Zn_1-xCu_xO薄膜,并对其微观结构、光致发光谱、伏安特性、保持特性和转换电压分布进行探讨。PL谱表明,Cu掺杂在禁带中引入深受主能级,降低氧空位浓度,导致ZnO薄膜的紫外发光、蓝光发光和绿光发光峰强度降低。所得薄膜的晶粒细小、致密、均匀,具有稳定的双极性阻变特性,开关比R_off/R_on最高达到10⁵,其低阻态（LRS）和高阻态（HRS）的阻变机理分别符合欧姆定律和空间电荷限制传导理论。器件经100次循环测试后开关比无明显变化,呈现出较为良好的抗疲劳特性。Cu掺杂对LRS影响不大,但显著改善了HRS的分散性以及转换电压V_SET的分散性。当Cu掺杂量x=0.04时,器件表现出良好的综合性能：R_off≈10⁶ Ω,R_off/R_on≈10⁴,V_SET介于0.4~3.03 V之间。     

Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates

We report on reversible bipolar resistance switching effects in multiferroic BiFeO₃ thin films without electroforming. The BiFeO₃ thin films with (110) preferential orientation were prepared on LaNiO₃-electrodized Si substrates with a Pt/BiFeO₃/LaNiO₃ device configuration. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) of the devices was as high as three orders of magnitude. The dominant conduction mechanisms of LRS and HRS were dominated by ohmic behavior and trap-controlled space charge limited current, respectively. The resistance switching mechanism of the devices was discussed using a modified Schottky-like barrier model taking into account the movement of oxygen vacancies.     

Charge transport and bipolar switching mechanism in a Cu/HfO_2/Pt resistive switching cell

Bipolar resistance switching characteristics are investigated in Cu/sputtered-HfO_2/Pt structure in the application of resistive random access memory(RRAM).The conduction mechanism of the structure is characterized to be SCLC conduction.The dependence of resistances in both high resistance state(HRS) and low resistance state(LRS) on the temperature and device area are studied.Then,the composition and chemical bonding state of Cu and Hf at Cu/HfO_2 interface region are analyzed by x-ray photoelectron spectroscopy(XPS).Combining the electrical characteristics and the chemical structure at the interface,a model for the resistive switching effect in Cu/HfO_2/Pt stack is proposed.According to this model,the generation and recovery of oxygen vacancies in the HfO_2 film are responsible for the resistance change.     

Characteristics of the bipolar resistive switching behavior in memory device with Au/ZnO/ITO structure

In this work, reproducible and stable bipolar resistive switching behavior without the requirement of forming process is observed in the memory device with Au/ZnO/ITO structure. It shows a high R_on/R_off ratio, where R_on and R_off are the resistance at low resistance state (LRS) and high resistance state (HRS), respectively. The dominated transport mechanisms for LRS and HRS are related to space charge limited current and Ohmic behavior, respectively. This bipolar resistive behavior is attributed to the formation and rupture of conducting filaments which are constructed with oxygen vacancies. The Au/ZnO/ITO device discussed in this work shows huge potential applications in the next generation nonvolatile memory field.     

Temperature-dependent resistive switching behavior in the structure of Au/Nb:SrTiO3/Ti

Au/Nb:SrTiO₃/Ti structures were fabricated by depositing Au and Ti electrodes on a single crystal 0.5 wt% Nb:SrTiO₃ (NSTO) using rf-magnetron sputtering technique. Resistive switching properties at different temperature were investigated. The Ti/NSTO interface was ohmic contact, which indicated that the resistive switching behavior was attributed to Au/NSTO interface. The resistive switching behavior happened only at the temperature above 180 K, which was possibly caused by the increase of Schottky barrier height with the increase of temperature. The structure showed a semiconductor behavior at high-resistance state (HRS) and a metallic behavior at low-resistance state (LRS). The switching conduction mechanism of Au/NSTO/Ti device is primarily described as space-charge-limited conduction (SCLC) according to the electrical transport properties measurement.     

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 10 2 . The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 10 4 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.     

下电极对ZnO薄膜电阻开关特性的影响

本文采用直流磁控溅射法在三种不同的下电极(BEs)上制备了ZnO薄膜, 获得了W/ZnO/BEs存储器结构. 研究了不同的下电极材料对器件电阻开关特性的影响. 研究结果表明, 以不同下电极所制备的器件都具有单极性电阻开关特性. 在低阻态时, ZnO薄膜的导电机理为欧姆传导, 而高阻态时薄膜的导电机理为空间电荷限制电流. 不同下电极与ZnO薄膜之间的肖特基势垒高度对电阻开关过程中的操作电压有较大的影响, 并基于导电细丝模型对不同下电极上ZnO薄膜的低阻态阻值及reset电流的变化进行了解释. 关键词： ZnO薄膜 电阻开关 下电极     

Effect of AlN layer on the resistive switching properties of TiO2 based ReRAM memory devices

The present study reports the resistive switching behaviour in Titanium Dioxide (TiO₂) material, with possible implementations in non volatile memory device. The Cu/TiO₂/Pt memory device exhibit uniform and stable bipolar resistive switching behaviour. The current-voltage (I-V) analysis shows two discrete resistance states, the High Resistance State (HRS) and the Low Resistance State (LRS). The effect of an additional AlN layer in the resistive memory cell is also investigated. The Cu/TiO₂/AlN/Pt device shows a multilevel (tri-state) resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the formed filaments is confirmed by performing a resistance vs. temperature measurement. The bilayer device shows improved reliability over the single layer device. The formation of high thermal conductive interfacial oxy-nitride (AlON) layer is the main reasons for the enhancement of resistive switching properties in Cu/TiO₂/AlN/Pt cell. The performance of device was measured in terms of endurance and retention, which exhibits good endurance over 10⁵ cycles and long retention time of 10⁵ s at 125 °C. The above result suggests the feasibility of Cu/TiO₂/AlN/Pt devices for multilevel non volatile ReRAM application.     

Resistive switching functional quantum-dot light-emitting diodes

This study demonstrates quantum-dot light-emitting diodes (QD-LEDs) with a function of resistive switching memory, capable of on/off operation at the same driving current depending on reset/set state. The QD-LEDs were fabricated by spin-coating process and experienced two different annealing conditions, which yielded defective or less-defective V₂O_5–x layer. One of the annealing conditions produced QD-LEDs with the unusual electrical behaviors of negative differential resistance (NDR), capacitance oscillation, and voltage–current hysteresis curves, signifying so-called resistive switching characteristics. X-ray and ultraviolet photoelectron spectroscopies were used to examine the chemical state of the differently annealed V₂O_5–x layers. The less stoichiometric V₂O_5–x layer was found to be responsible for the resistive switching behaviors of the NDR and the low and high resistance states (LRS and HRS, respectively). We discuss the LRS/HRS of V₂O_5–x for resistive switching in terms of a conductive filament effect, induced by microstructural changes caused by oxygen drift and vacancy annihilation processes in the high defect density V₂O_5–x layer.     

Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell

Resistive switching mechanism of zirconium oxide-based resistive random access memory (RRAM) devices composed of Cu-doped ZrO₂ film sandwiched between an oxidizable electrode and an inert electrode was investigated. The Ag/ZrO₂:Cu/Pt RRAM devices with crosspoint structure fabricated by e-beam evaporation and e-beam lithography show reproducible bipolar resistive switching. The linear I?CV relationship of low resistance state (LRS) and the dependence of LRS resistance (R _ON) and reset current (I _reset) on the set current compliance (I _comp) indicate that the observed resistive switching characteristics of the Ag/ZrO₂:Cu/Pt device should be ascribed to the formation and annihilation of localized conductive filaments (CFs). The physical origin of CF was further analyzed by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). CFs were directly observed by cross-sectional TEM. According to EDS and elemental mapping analysis, the main chemical composition of CF is determined by Ag atoms, coming from the Ag top electrode. On the basis of these experiments, we propose that the set and reset process of the device stem from the electrochemical reactions in the zirconium oxide under different external electrical stimuli.     

La施主掺杂SrTiO_3单晶的阻变性能研究

以La施主掺杂SrTiO_3(La STO)单晶为样品,制备了Pt/LaSTO/In结构存储器件.通过一系列电学测试,发现该器件具有稳定的多级阻变现象,最大开关比为10~4;高低阻电流-电压关系曲线的拟合分析表明,高阻时存在界面势垒,而低阻时满足电子隧穿模型特性.电子顺磁共振研究表明LaSTO单晶内存在带正电的空穴缺陷中心.综合分析证明器件的高低阻之间的转变由界面空位缺陷导致的电子俘获与去俘获引起.此外发现光照会对LaSTO单晶的阻值产生影响.该实验结果为LaSTO单晶在阻变存储器件中的应用提供了理论和技术指导.     

Effect of cation and anion defects on the resistive switching polarity of ZnO x thin films

In this paper, we achieve the resistive switching (RS) polarity from unipolar to bipolar in a simple Al/ZnO _x /Al structure by moderating the oxygen content in the ZnO sputtering process. In a pure Ar sputtering, Al/ZnO _x /Al shows unipolar behavior, as oxygen partial pressure increases, the RS polarity changes to bipolar, and the switch current decreases by about five orders of magnitude. The current transport properties of unipolar device show ohmic behavior under both high resistance (HRS) and low resistance states (LRS), but the bipolar device shows Schottky barrier modulated current transport properties. We study the defect types in the unipolar and bipolar devices through photoluminescence (PL) spectra. The PL results show that the interstitial zinc (Zn_i) and interstitial oxygen (O_i) are dominant in unipolar and bipolar devices, respectively. We attribute this phenomenon to Zn_i and O_i playing important role in unipolar (URS) and bipolar resistive switching (BRS), respectively.     

Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate

Pt/TiO₂/TiN device with the amorphous TiO₂ film grown at room temperature under an oxygen partial pressure of 1.0 mTorr showed reliable bipolar switching behavior. During the electroforming process, a large number of oxygen vacancies formed in the TiO₂ film and accumulated at the Pt/TiO₂ interface. The barrier height of the Schottky contact of the Pt/TiO₂ interface was reduced owing to the presence of these oxygen vacancies, resulting in the low-resistance state (LRS). Moreover, oxygen ions diffused into the TiN electrode during the electroforming and set processes. On the other hand, the oxygen ions in the TiN electrode diffused out and reacted with oxygen vacancies in the TiO₂ film during the reset process, and the device changed from the LRS to the high-resistance state (HRS). Conduction in the LRS and HRS can be attributed to Ohmic conduction and the trap controlled space charged limited mechanism, respectively.